Datasheet BAS221A Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1999 Apr 26

1999 May 07

DISCRETE SEMICONDUCTORS

BAS221

General purpose diode

ook, halfpage

M3D154

1999 May 07 2

Philips Semiconductors Product specification

General purpose diode BAS221

FEATURES

• Small ceramic SMD package

• Switching speed: max. 50 ns

• General application

• Continuous reverse voltage:

max. 200 V

• Repetitive peak reverse voltage:
max. 250 V

• Repetitive peak forward current:
max. 1 A.

APPLICATIONS

• General purpose switching in e.g.
surface mounted circuits.

DESCRIPTION

The BAS221 is a general purpose diode fabricated in planar technology, and
encapsulated in the ceramic SOD110 package.

Fig.1 Simplified outline (SOD110) and symbol.

handbook, 4 columns

MAM139

ka

cathode mark

top viewside viewbottom view

ak

Marking code: JS.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Device mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

RRM

repetitive peak reverse voltage − 250 V

V

R

continuous reverse voltage − 200 V

I

F

continuous forward current note 1; see Fig.2 − 300 mA

I

FRM

repetitive peak forward current tp< 0.5 ms; δ≤0.25 − 1A

I

FSM

non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 20 A
t = 100 µs − 7A
t = 10 ms − 2A

P

tot

total power dissipation T

amb

=25°C; note 1 − 400 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

1999 May 07 3

Philips Semiconductors Product specification

General purpose diode BAS221

THERMAL CHARACTERISTICS

Note

1. Device mounted on an FR4 printed-circuit board.

ELECTRICAL CHARACTERISTICS

T

j

=25°C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

thermal resistance from junction to tie-point 200 K/W

R

th j-a

thermal resistance from junction to ambient note 1 315 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

forward voltage see Fig.3

I

F

= 100 mA 1 V

I

F

= 200 mA 1.25 V

I

F

= 300 mA 1.4 V

I

R

reverse current see Fig.5

V

R

= 200 V 100 nA

V

R

= 200 V; Tj= 150 °C 100 µA

C

d

diode capacitance f = 1 MHz; VR= 0; see Fig.6 2 pF

t

rr

reverse recovery time when switched from IF= 30 mA to

IR= 30 mA; RL= 100 Ω; measured
at IR= 3 mA; see Fig.7

50 ns

1999 May 07 4

Philips Semiconductors Product specification

General purpose diode BAS221

GRAPHICAL DATA

Device mounted on an FR4 printed-circuit board.

Fig.2 Maximum permissible continuous forward

current as a function of ambient
temperature.

handbook, halfpage

0 50 100 200

400

300

100

0

200

150

T

amb

(°C)

I

F

(mA)

MDA986

(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

Fig.3 Forward current as a function of forward

voltage.

handbook, halfpage

02

600

I

F

(mA)

0

200

400

MBG384

1

VF (V)

(1) (3)(2)

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

Based on square wave currents.
Tj=25°C prior to surge.

handbook, full pagewidth

MDA987

10

2

10

1

10

−1

110

t

p

(µs)

I

FSM

(A)

10

2

10

3

10

4

1999 May 07 5

Philips Semiconductors Product specification

General purpose diode BAS221

Fig.5 Reverse current as a function of junction

temperature.

handbook, halfpage

10

2

10

200

0

MBG381

100

Tj (

o

C)

I

R

(µA)

1

10

2

10

1

(1) (2)

(1) VR=V

Rmax

; maximum values.

(2) VR=V

Rmax

; typical values.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj=25°C.

handbook, halfpage

04862

1.0

0.8

0.2

0.6

0.4

MBG447

VR (V)

C

d

(pF)

Fig.7 Reverse recovery time and waveforms.

(1) IR= 3 mA.
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr= 0.35 ns.
Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance).

handbook, full pagewidth

t

rr

(1)

I

F

t

output signal

t

r

t

t

p

10%

90%

V

R

input signal

V = V I x R

RF S

R = 50SΩ

I

F

D.U.T.

R = 50iΩ

SAMPLING

OSCILLOSCOPE

MGA881

1999 May 07 6

Philips Semiconductors Product specification

General purpose diode BAS221

PACKAGE OUTLINE

UNIT

A

max.

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

1.6

D

2.10

1.90

y

0.1

E

1.40

1.10

DIMENSIONS (mm are the original dimensions)

SOD110

97-04-14

cathode
identifier

A

21

D

y

E

0 0.5 1 mm

scale

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1999 May 07 7

Philips Semiconductors Product specification

General purpose diode BAS221

NOTES

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999 64

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Printed in The Netherlands 115002/3180/02/pp8 Date of release: 1999 May 07 Document order number: 9397 750 05977