Datasheet BAS216 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D154

BAS216

High-speed switching diode

Product specification
Supersedes data of 1996 Apr 03

1999 Apr 22

Philips Semiconductors Product specification

High-speed switching diode BAS216

FEATURES

• Small ceramic SMD package

• High switching speed: max. 4 ns

APPLICATIONS

• High-speed switching in e.g.
surface mounted circuits.

• Continuous reverse voltage:
max. 75 V

• Repetitive peak reverse voltage:
max. 85 V

• Repetitive peak forward current:
max. 500 mA.

handbook, 4 columns

ak

Marking code: A6.

Fig.1 Simplified outline (SOD110) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

DESCRIPTION

The BAS216 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small rectangular ceramic SMD
SOD110 package.

cathode mark

ka

top viewside viewbottom view

MAM139

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
I

F

I

FRM

I

FSM

RRM
R

repetitive peak reverse voltage − 85 V
continuous reverse voltage − 75 V
continuous forward current note 1 − 250 mA
repetitive peak forward current − 500 mA
non-repetitive peak forward current square wave; Tj=25°C prior to

surge; see Fig.4

t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A

P

tot

T

stg

T

j

total power dissipation T

=25°C; see Fig.2; note 1 − 400 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C

Note

1. Device mounted on an FR4 printed-circuit board.

1999 Apr 22 2

Philips Semiconductors Product specification

High-speed switching diode BAS216

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

F

I

R

C

d

t

rr

V

fr

forward voltage see Fig.3

I

=1mA − 715 mV

F

I

=10mA − 855 mV

F

=50mA − 1V

I

F

I

= 150 mA − 1.25 V

F

reverse current see Fig.5

=25V − 30 nA

V

R

V

=75V − 1 µA

R

V

=25V; Tj= 150 °C − 30 µA

R

=75V; Tj= 150 °C − 50 µA

V

R

diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 1.5 pF
reverse recovery time when switched from IF= 10 mA to

− 4ns
IR= 10 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7

forward recovery voltage when switched from IF= 10 mA;

− 1.75 V
tr= 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 200 K/W
thermal resistance from junction to ambient note 1 315 K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1999 Apr 22 3

Philips Semiconductors Product specification

High-speed switching diode BAS216

GRAPHICAL DATA

amb

MSA570

o

500

P

tot

(mW)

250

0

0 100 200

Device mounted on an FR4 printed-circuit board.

T ( C)

Fig.2 Maximum permissibletotal power dissipation

as a function of ambient temperature.

300

handbook, halfpage

I

F

(mA)

200

100

0

02

(1) Tj= 150 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.

(1) (3)(2)

1

Fig.3 Forward current as a function of

forward voltage.

MBG382

VF (V)

2

10

handbook, full pagewidth

I

FSM

(A)

10

1

−1

10

1

Based on square wave currents.
Tj=25°C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

MBG704

10

2

10

3

10

tp (µs)

4

10

1999 Apr 22 4

Philips Semiconductors Product specification

High-speed switching diode BAS216

5

10

I

R

(nA)

4

10

3

10

2

10

10

Dotted line: maximum values.
Solid line: typical values.

V = 75 V

R

75 V

25 V

100

Fig.5 Reverse current as a function of

junction temperature.

o

T ( C)

j

MSA563

0.6

handbook, halfpage

C

d

(pF)

0.5

0.4

0.2

2000

0

0481216

f = 1 MHz; Tj=25°C.

MBH285

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1999 Apr 22 5

Philips Semiconductors Product specification

High-speed switching diode BAS216

handbook, full pagewidth

R = 50SΩ

V = V I x R

RF S

(1) IR= 1 mA.

I

F

D.U.T.

SAMPLING

OSCILLOSCOPE

R = 50iΩ

MGA881

t

r

10%

V

R

90%

t

p

input signal

Fig.7 Reverse recovery voltage test circuit and waveforms.

t

I

F

t

rr

t

(1)

output signal

I

R = 50SΩ

Ω1 k Ω450

D.U.T.

I

OSCILLOSCOPE

R = 50iΩ

MGA882

Fig.8 Forward recovery voltage test circuit and waveforms.

1999 Apr 22 6

10%

t

r

90%

t

p

input
signal

V

V

fr

t

t

output

signal

Philips Semiconductors Product specification

High-speed switching diode BAS216

MOUNTING
Reflow soldering

Follow standard reflow soldering techniques to ensure
correct application of solder paste and placement of the
SOD110 package (see Fig.9).

handbook, halfpage

Dimensions in mm.

3.00

1.25

MGC119

1.001.00

Fig.9 SOD110 reflow soldering pattern.

Wave soldering

Before wave soldering, attach SOD110 packages to the
printed-circuit boards using a small dot of thermo-setting
epoxy or UV-curing adhesive centred between the
soldering lands (see Fig.10).

handbook, halfpage

1.10

Dimensions in mm.

3.40

1.10

1.25

MGC126

Fig.10 SOD110 wave soldering pattern.

1999 Apr 22 7

Philips Semiconductors Product specification

High-speed switching diode BAS216

PACKAGE OUTLINE

Very small ceramic rectangular surface mounted package SOD110

cathode
identifier

OUTLINE

VERSION

SOD110

D

A

21

0 0.5 1 mm

scale

REFERENCES

IEC JEDEC EIAJ

E

y

DIMENSIONS (mm are the original dimensions)

UNIT

mm

A

max.

2.10

1.6

1.90

EUROPEAN

PROJECTION

D

E

1.40

1.10

ISSUE DATE

0.1

97-04-14

y

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 22 8

Philips Semiconductors Product specification

High-speed switching diode BAS216

NOTES

1999 Apr 22 9

Philips Semiconductors Product specification

High-speed switching diode BAS216

NOTES

1999 Apr 22 10

Philips Semiconductors Product specification

High-speed switching diode BAS216

NOTES

1999 Apr 22 11

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© Philips Electronics N.V. 1999 SCA63
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Printed in The Netherlands 115002/3180/04/pp12 Date of release: 1999 Apr22 Document order number: 9397 750 05749