Page 1
BAS21
BAS21
3
3
CONNECTION DIAGRAM
3
29
2 NC
1
SOT-23
2
12
1
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Working Inverse Voltage 250 V
Average Rectified Current 200 mA
DC Forward Current 600 mA
Recurre nt Peak Forward Current 700 mA
Peak Forward Surge Current
Storage Temperature Range -55 to +150
Operating Junction Temperature 150
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
2.0
A
A
°
°
C
C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
BAS21
P
D
R
θ
JA
ã 1998 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
C/W
°
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General Purpose High V oltage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Breakdown Voltage
I
= 100 µA
R
Reverse Voltage Leakage Current VR = 200 V
V
= 200 V, TA = 150 °C
R
Forward Voltage IF = 100 mA
I
= 200 mA
F
250 V
100
100
1.0
1.25
nA
µ
Diode Capacitance VR = 0, f = 1.0 MHz 5.0 pF
Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,
= 100
R
Ω
L
50 nS
A
V
V
BAS21
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Formative or
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