DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 26
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 100 V; 150 V; 200 V
• Repetitive peak reverse voltage:
max. 120 V; 200 V; 250 V
• Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS19, BAS20, BAS21 are
general purpose diodes fabricated in
planar technology, and encapsulated
in small SOT23 plastic SMD
packages.
MARKING
TYPE NUMBER
MARKING
CODE
BAS19 JP∗
BAS20 JR∗
BAS21 JS∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
handbook, halfpage
21
3
Fig.1 Simplified outline (SOT23) and symbol.
(1)
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
2
n.c.
3
MAM185
1
1999 May 26 2
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
F
I
FRM
I
FSM
P
T
T
RRM
R
tot
stg
j
repetitive peak reverse voltage
BAS19 − 120 V
BAS20 − 200 V
BAS21 − 250 V
continuous reverse voltage
BAS19 − 100 V
BAS20 − 150 V
BAS21 − 200 V
continuous forward current see Fig.2; note 1 − 200 mA
repetitive peak forward current − 625 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 9A
t = 100 µs − 3A
t = 10 ms − 1.7 A
total power dissipation T
=25°C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26 3
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
I
= 100 mA 1 V
F
I
= 200 mA 1.25 V
F
reverse current see Fig.5
BAS19 V
BAS20 V
BAS21 V
= 100 V 100 nA
R
V
= 100 V; Tj= 150 °C 100 µA
R
= 150 V 100 nA
R
V
= 150 V; Tj= 150 °C 100 µA
R
= 200 V 100 nA
R
= 200 V; Tj= 150 °C 100 µA
V
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 5 pF
reverse recovery time when switched from IF= 30 mA to
50 ns
IR= 30 mA; RL= 100 Ω; measured at
IR= 3 mA; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point 330 K/W
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 26 4
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
GRAPHICAL DATA
amb
MBG442
(oC)
300
handbook, halfpage
I
F
(mA)
200
100
0
0 100 200
Device mounted on an FR4 printed-circuit board.
T
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
600
handbook, halfpage
I
F
(mA)
400
200
0
02
(1) Tj= 150°C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
(1) (3)(2)
1
Fig.3 Forward current as a function of
forward voltage.
MBG384
VF (V)
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG703
10
2
10
3
10
tp (µs)
4
10
1999 May 26 5
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
2
10
handbook, halfpage
I
R
(µA)
10
1
1
10
2
10
(1) VR=V
(2) VR=V
0
Rmax
Rmax
(1) (2)
100
; maximum values.
; typical values.
Fig.5 Reverse current as a function of
junction temperature.
Tj (
MBG381
o
C)
200
1.0
handbook, halfpage
C
d
(pF)
0.8
0.6
0.4
0.2
04862
f = 1 MHz; Tj=25°C.
MBG447
VR (V)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
amb
MBG445
(oC)
300
handbook, halfpage
V
R
(V)
(1)
200
(2)
(3)
100
0
0 100 200
(1) BAS21.
(2) BAS20.
(3) BAS19.
T
Fig.7 Maximum permissible continuous reverse
voltage as a function of the
ambient temperature.
1999 May 26 6
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
handbook, full pagewidth
R = 50SΩ
V = V I x R
RF S
(1) IR= 3 mA.
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50iΩ
MGA881
t
r
10%
V
R
90%
t
p
input signal
Fig.8 Reverse recovery voltage test circuit and waveforms.
t
I
F
t
rr
t
(1)
output signal
1999 May 26 7
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
cD
p
0.48
0.15
3.0
0.38
0.09
IEC JEDEC EIAJ
2.8
1.4
1.2
e
E
1.9
REFERENCES
0.95
e
1
UNIT
mm
VERSION
A
1.1
0.9
OUTLINE
SOT23
max.
1999 May 26 8
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 26 9
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
NOTES
1999 May 26 10
Philips Semiconductors Product specification
General purpose diodes BAS19; BAS20; BAS21
NOTES
1999 May 26 11
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1999 65
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Printed in The Netherlands 115002/03/pp12 Date of release: 1999 May26 Document order number: 9397 75005885
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