Page 1
SMD Switching Diode
Formosa MS
BAS16W/BAV70W/BAW56W/BAV99W
List
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
1
2
2
2
2
3.4
5
5
5
6
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
High reliability test capabilities...........................................................
6
7
8
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TEL:886-2-22696661
FAX:886-2-22696141
Page 1
Document ID Issued Date Revised Date Revision Page.
DS-221914 2008/02/10 - A 8
Page 2
SMD Switching Diode
Formosa MS
BAS16W/BAV70W/BAW56W/BAV99W
200mW Surface Mount
Switching Diode-70-75V
Package outline
Features
•
Fast speed switching.
•
For general purpose switching application.
•
High conductance.
•
Silicon epitaxial planar chip.
Lead-free parts meet RoHS requirments.
•
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-323
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.006 gram
Maximum ratings (AT T =25 C unless otherwise noted)
PARAMETER
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation FR-5
Thermal Resistance Junction to Ambient
Total Device Dissipation
Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Reverse Breakdown Voltage(I = 100uAdc)
Reverse Voltage Leakage Current
Diode Capacition(V = 0V, f = 1.0MHz)
Reverse Recovery Time(I = I = 10mA,V = 5.0Vdc,
I (REC) = 1.0mAdc, R = 100 )
Forward Voltage
R
FR R
R L OHM
o
A
Board* , T = 25 C
Derate Above 25 C
Substrate* , T = 25 C
Derate Above 25 C
BR
at V = 75V
R
at V = 70V
R
at V = 25V, T =150 C
RJ
at V = 75V, T =150 C
RJ
at V = 70V, T =150 C
RJ
at I = 1.0mAdc
F
at I = 10mAdc
F
at I = 50mAdc
F
at I = 150mAdc
F
1O
A
O
2O
A
O
O
O
O
Symbol
V
R
I
F
I
FM
P
D
R
èJA
P
D
R
èJA
T
j
T
STG
V
BR
I
R
C
D
T
rr
V
F
SOT-323
0.026 (0.65)
0.016 (0.40)
(B)
(A)
.056(1.40)
.048(1.20)
0.088 (2.20)
0.072 (1.80)
0.054 (1.35)
0.046 (1.15)
0.040 (1.00)
0.032 (0.80)
Dimensions in inches and (millimeters)
BAS16W
0.096 (2.40)
0.080 (2.00)
(0.002)
BAV70W BAW56W BAV99W
75
(C)
R 0.05
0.012 (0.30)
0.021 (0.53)
0.017 (0.42)
0.010 (0.25)
70
0.004 (0.10)
200
500
200
1.6
625
300
2.4
417
-55 ~ +150
-65 ~ +175
7075
1.0
- 2.5 2.5
30.0 30.0 30.0
50.0
-
2.0
- - -
2.5
60.0
- - -
100.0
50.0 50.0
2.01.5 1.5
6.0
715
855
1000
1250
215
UNIT
V
mA
mA
mW
O
mW/ C
O
C/W
mW
O
mW/ C
O
C/W
o
C
o
C
V
µAdc
pF
nS
mV
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Page 2
Document ID Issued Date Revised Date Revision Page.
DS-221914 2008/02/10 - A 8
Page 3
Rating and characteristic curves for each diode (BAS16W/BAV70W/BAW56W/BAV99W)
820 OHM
+10V
50 OHM OUTPUT
PULSE
GENERATOR
100
2 K
100uH
0.1 uF
I
F
Notes :
DUT
1. A2.0 Kohm variable resistor adjusted for a forward Current (IF) of 10mA.
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
3. tp >> trr.
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
0.1 uF
t
t
p
r
10%
50 OHM INPUT
SAMPLING
OSCILLOSCOPE
V
90%
R
Recovery Time Equivalent Test Circuit
10
t
FIG.2 - LEAKAGE CURRENT
O
T
= 150
C
A
t
r
t
IR(REC)=1 mA
OUTPUT PULSE
(IF=IR=10mA;measured
at iR(REC)=1mA)
O
T
= 125
C
1.0
O
T = 85 C
10
1.0
F
I , FORWARD CURRENT,(mA)
A
T = 25 C
A
T = -40 C
A
O
O
0.1
0.01
A
I , REVERSE CURRENT,(mA)
A
T=
A
T=
A
T=
A
8
5
2
O
5C
O
5C
O
5C
0.001
0.1
.2 .4 .8 1.2 1.6 2.0
V , FORWARD VOLTAGE,(V)
F
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Page 3
0 10 20 30 40 50
V , REVERSE VOLTAGE (V)
R
Document ID Issued Date Revised Date Revision Page.
DS-221914 2008/02/10 - A 8
Page 4
Rating and characteristic curves for each diode (BAS16W/BAV70W/BAW56W/BAV99W)
FIG.3 - DIODE CAPACITANCE (BAS16W)
0.68
0.64
0.60
0.56
D
C , DIODE CAPACITANCE,(pF)
0.52
V , FORWARD VOLTAGE,(V)
F
1.00
0.90
0.80
0.70
D
C , DIODE CAPACITANCE,(pF)
0.60
FIG.5 - DIODE CAPACITANCE (BAW56W)
1.75
0.68
FIG.4 - DIODE CAPACITANCE (BAV70W)
0 2 4 6 80 2 4 6 8
V , FORWARD VOLTAGE,(V)
F
FIG.6 - DIODE CAPACITANCE (BAV99W)
1.50
1.25
1.00
D
C , DIODE CAPACITANCE,(pF)
0.75
0 2 4 6 8
V , FORWARD VOLTAGE,(V)
F
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Page 4
0.64
0.60
0.56
D
C , DIODE CAPACITANCE,(pF)
0.52
0 2 4 6 8
V , FORWARD VOLTAGE,(V)
F
Document ID Issued Date Revised Date Revision Page.
DS-221914 2008/02/10 - A 8
Page 5
SMD Switching Diode
Formosa MS
BAS16W/BAV70W/BAW56W/BAV99W
Pinning information
Type number
BAS16W
BAV70W
BAW56W
BAV99W
Marking code
A6
A4, JA
A1, JC
A7, JG
Symbol
A
C
A
C
A
C
A
C
B
B
B
B
Suggested solder pad layout
0.025(0.65)
Dimensions in inches and (millimeters)
SOT-323
0.025(0.65)
0.063(1.6)
0.031(0.80)
0.075(1.90)
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Page 5
Document ID Issued Date Revised Date Revision Page.
DS-221914 2008/02/10 - A 8
Page 6
SMD Switching Diode
Formosa MS
BAS16W/BAV70W/BAW56W/BAV99W
Packing information
P0
P1
d
E
F
A
T
P
C
W
B
D2
D
unit:mm
D1
W1
Item Tolerance
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
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Symbol
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
Page 6
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
SOT-323
2.36
2.40
1.20
1.50
-
-
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Document ID Issued Date Revised Date Revision Page.
DS-221914 2008/02/10 - A 8
Page 7
SMD Switching Diode
Formosa MS
BAS16W/BAV70W/BAW56W/BAV99W
Reel packing
PACKAGE
SOT-323
REEL SIZE
7"
REEL
(pcs)
3000
COMPONENT
SPACING
4.0
BOX
(pcs)(m/m)
30,000
INNER
BOX
(m/m)
195*195*150
REEL
DIA,
178
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=10 C~35 C Humidity=65%±15%
2.Reflow soldering of surface-mount devices
TP
TL
Tsmax
e
Tsmin
tur
a
TS
er
p
m
tts
Preheat
Te
oo
ttP
Ramp-up
Ramp-down
ttL
CARTON
SIZE
460*400*420
Critical Zone
TL to TP
CARTON
360,000
APPROX.
GROSS WEIGHT
(kg)(pcs)(m/m)(m/m)
15.0
25
Tot25 C to Peak
Time
3.Flow (wave)soldering (solder dipping)
Profile Feature Soldering Condition
Average ramp-up rate(TL to TP) <3 C/sec
Preheat
-Temperature Min(Tsmin) 100 C
-Temperature Max(Tsmax) 150 C
-Time(min to max)(ts) 60~120sec
Tsmax to TL
-Ramp-upRate <3 C/sec
Time maintained above:
-Temperature(TL) 183 C
-Time(tL) 60~150sec
Peak Temperature(TP) 255 C-0/+5 C
Time within 5 C of actual Peak
o
Temperature(tP)
Ramp-down Rate <6 C/sec
Wave Soldering
IR Reflow
o
o
o
o
o
oo
10~30sec
o
Time 25 to Peak Temperature <6minutes
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Page 7
Document ID Issued Date Revised Date Revision Page.
DS-221914 2008/02/10 - A 8
Page 8
SMD Switching Diode
Formosa MS
BAS16W/BAV70W/BAW56W/BAV99W
High reliability test capabilities
Item Test Conditions Reference
1. Solder Resistance
at 260±5 C for 10±2sec.
immerse body into solder 1/16"±1/32"
O
MIL-STD-750D
METHOD-2031
2. Solderability
3. High Temperature Reverse Bias
4. Forward Operation Life
5. Intermittent Operation Life
6. Pressure Cooker
7. Temperature Cycling
8. Thermal Shock
9. Forward Surge
10. Humidity
at 245±5 C for 5 sec.
V =80% rate at T =150 C for 168 hrs.
Rated average rectifier current at T=25 C for 500hrs.
T = 25 C, I = I
O
RA
O
AFO
O
O
On state: power on for 5 min.
off state: power off for 5 min.
on and off for 500 cycles.
15P at T =121 C for 4 hrs.
SIG A
OO
-55 C to +125 C dwelled for 30 min.
O
and transferred for 5min. total 10 cycles.
OO
0 C for 5 min. rise to 100 C for 5 min. total 10 cycles.
8.3ms single half sine-wave superimposed
on rated load, one surge.
at T =65 C, RH=98% for 1000hrs.
O
A
MIL-STD-202F
METHOD-208
MIL-STD-750D
METHOD-1026
MIL-STD-750D
METHOD-1027
MIL-STD-750D
METHOD-1036
MIL-STD-750D
METHOD-1051
MIL-STD-750D
METHOD-1056
MIL-STD-750D
METHOD-4066-2
MIL-STD-750D
METHOD-1038
11. High Temperature Storage Life
12. Solvent Resistance
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O
at 175 C for 1000 hrs.
Dip into Freon at 25 C for 1 min.
O
Page 8
Document ID Issued Date Revised Date Revision Page.
DS-221914 2008/02/10 - A 8
MIL-STD-750D
METHOD-1031
MIL-STD-202F
METHOD-215
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