BAS 16
g
Silicon Switching Diode
3
• For high-speed switching applications
1
13
EHA07002
Type Marking Pin Configuration Package
BAS 16 A6s 1 = A 2 n.c. 3 = C SOT-23
2
VPS05161
Maximum Ratings
Parameter Symbol UnitValue
Diode reverse voltage
Peak reverse voltage
Surge forward current, t = 1 µs I
Total power dissipation, TS = 54 °C P
Storage temperature
V
V
I
T
T
F
FS
j
st
R
RM
tot
85
250 mAForward current
4.5
150
-65 ... 150
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
R
R
thJA
thJS
≤ 330
≤ 260
V75
mW370
°CJunction temperature
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Oct-07-19991
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAS 16
Parameter
DC characteristics
Breakdown voltage
I
= 100 µA
(BR)
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 50 mA
F
I
= 150 mA
F
Reverse current
V
= 70 V
R
Reverse current
V
= 25 V, TA = 150 °C
R
V
= 75 V
R
Symbol Values Unit
min. typ. max.
V
V
I
I
R
R
(BR)
F
- - - V
-
-
-
-
-
-
-
-
715
855
1000
1250
mV
- - 1 µA
-
-
-
-
30
50
Forward recovery voltage
I
= 10 mA, tp = 20 ns
F
AC characteristics
Diode capacitance
V
= 0 V, f = 20 MHz
R
Reverse recovery time
I
= 10 mA, IR = 10 mA, RL = 100 Ω,
F
measured at I
= 1mA
R
Test circuit for reverse recovery time
D.U.T.
Ι
F
Oscillograph
EHN00017
V
C
t
fr
D
rr
- - 1.75 V
- - 2 pF
- - 6 ns
Pulse generator: tp = 100ns, D = 0.05,
t
= 0.6ns, Ri = 50Ω
r
Oscillograph: R = 50Ω, tr = 0.35ns,
C ≤ 1pF
Oct-07-19992
BAS 16
Forward current I
= f (TA*;TS)
F
* Package mounted on epoxy
300
Ι
F
mA
200
100
0
0
50 100 C 150
EHB00021BAS 16
T
AS
T
T ;T
A
Reverse current I
BAS 16 EHB00022
5
10
= f (TA)
R
nA
Ι
R
4
10
max.
10
5
3
70 V
V
= 70 V
R
5
25 V
10
2
typ.
5
1
10
0 50 100 150
S
C
T
A
Forward current I
T
= 25°C
A
150
Ι
F
mA
100
50
0
0
= f (VF)
F
EHB00023BAS 16
maxtyp
0.5 1.0 V 1.5
V
F
Peak forward current I
T
= 25°C
A
BAS 16
2
10
Ι
A
FM
1
10
0
10
-1
10
t
D =
T
-2
10
10
-6
10
-5
10
-4
= f (tp)
FM
D = 0.005
p
-3
10
0.01
0.02
0.05
0.1
0.2
t
p
10
EHB00024
T
-2
10
-1
100s
t
Oct-07-19993
BAS 16
Forward voltage V
BAS 16 EHB00025
1.0
V
V
F
0.5
Ι
= 100 mA
F
10 mA
1 mA
0.1 mA
= f (TA)
F
0
0 50 100 150
C
T
A
Oct-07-19994
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