Datasheet BAS125-07W Datasheet (Siemens)

BAS 125-07W

Semiconductor Group

Jun-04-19981

Silicon Schottky Diode

• For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications

• Integrated diffused guard ring

• Low forward voltage

VPS05605

4

2

1

3

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BAS 125-07W 17s Q62702-D1347 1 = C1 2 = C2 SOT-3433 = A2 4 = A1

Maximum Ratings
Parameter

Symbol Value Unit

Diode reverse voltage

V

R

25 V

Forward current

I

F

100 mA

Surge forward current (t< 100µs)

I

FSM

500

Total power dissipation,

T

S

= 25 °C

P

tot

250 mW

Junction temperature

T

j

150 °C

Storage temperature

T

stg

- 55 ...+150

Maximum Ratings

Junction - ambient

1)

R

thJA

≤ 725 K/W

Junction - soldering point

R

thJS

≤ 565

1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 1 1998-11-01

BAS 125-07W

Semiconductor Group

Jun-04-19982

Electrical Characteristics at

T

A

= 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC characteristics

Reverse current

V

R

= 20 V

V

R

= 25 V

I

R

-

-

-

-

150
200

µA

Forward voltage

I

F

= 1 mA

I

F

= 10 mA

I

F

= 35 mA

V

F

-

-

-

385
530
800

400
650
900

mV

AC characteristics

Diode capacitance

V

R

= 0 V, f = 1 MHz

C

T

- - 1.1 pF

Differential forward resistance

I

F

= 5 mA, f = 10 kHz

r

f

- 16 - Ω

Semiconductor Group 2 1998-11-01

BAS 125-07W

Semiconductor Group

Jun-04-19983

Forward current

I

F

= f (

V

F

)

T

A

= Parameter

0.0

10

EHD07115BAS 125...

Ι

F

F

V

-2

-1

10

0

10

1

10

10

2

mA

-40C

T

A

=

C25

150 C

C85

1.0

0.5 V

Forward current

I

F

= f (

T

A

*;

T

S

)

* Package mounted on epoxy

0 C

0

EHD07119BAS 125...

Ι

F

A

T;T

S

50 100 150

20

40

60

80

mA

100

T

A

S

T

Reverse current

I

R

= f (

V

R

)

T

A

= Parameter

0

10

EHD07116BAS 125...

Ι

R

R

V

-3

-2

10

-1

10

0

10

10

1

A

2010 V

µ

T

A

= 125 C

C

= 85

A

T

T

A

= 25 C

Differential forward resistance

r

f

= f (

I

F

)

f

= 10 kHz

10

EHD07118BAS 125...

r

f

F

Ι

-2 2

10mA

0

10

Ω

10

4

10

1

10

2

10

3

-1

10

0

10

1

10

Semiconductor Group 3 1998-11-01

BAS 125-07W

Semiconductor Group

Jun-04-19984

Diode capacitance

C

T

= f (

V

R

)

f

= 1MHz

0

0.0

EHD07117BAS 125...

C

T

R

V

0.4

pF

1.0

10 V 20

0.6

0.2

0.8

Semiconductor Group 4 1998-11-01