Page 1
Silicon Schottky Diodes
Preliminary data
• For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
• Integrated diffused guard ring
• Low forward voltage
BAS 125-04W BAS 125-04W BAS 125-06W
BAS 125W
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package
BAS 125-04W 14s Q62702- 1 = A1 2 = C2 3=C1/A2 SOT-323
BAS 125-05W 15s Q62702- 1 = A1 2 = A2 3=C1/C2 SOT-323
BAS 125-06W 16s Q62702- 1 = C1 2 = C2 3=A1/A2 SOT-323
BAS 125W 13s Q62702- 1 = A 3 = C SOT-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
Forward current
Surge forward current (t
Total Power dissipation
T
≤ 25 °C
S
Junction temperature
Storage temperature
≤ 10
ms)
V
R
I
F
I
FSM
P
tot
T
j
T
stg
25 V
100 mA
500
mW
250
150 °C
- 55 ... + 150
Thermal Resistance
Junction ambient, BAS125W 1)
Junction ambient, BAS 125-04W...06W 1)
Junction - soldering point, BAS125W
Junction - soldering point, BAS125-04W...06W
1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm
R
R
R
R
thJA
thJA
thJS
thJS
≤
310 K/W
≤
425
≤ 230
≤
265
Semiconductor Group 1 Dec-20-1996
Page 2
BAS 125W
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Reverse current
V
= 20 V
R
V
= 25 V
R
Forward voltage
I
= 1 mA
F
I
= 10 mA
F
I
= 35 mA
F
I
V
R
-
-
F
-
-
-
-
-
385
530
800
150
200
400
650
900
nA
mV
AC Characteristics
Diode capacitance
V
= 0 V, f = 1 MHz
R
Differential forward resistance
C
R
T
pF
- - 1.1
F
Ω
I
= 5 mA, f = 10 kHz
F
- 16 -
Semiconductor Group 2 Dec-20-1996
Page 3
BAS 125W
Forward current
I
F
= f (
T
*;
A
* Package mounted on epoxy
BAS 125W
100
mA
80
I
F
70
60
50
40
30
20
10
T
)
S
T
S
T
A
0
0 20 40 60 80 100 120 °C 150
Permissible Pulse Load
BAS 125W
3
10
K/W
R
thJS
2
10
1
10
R
THJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
= f(
t
p
TA,T
)
S
Permissible Pulse Load
I
Fmax
/
I
FDC
= f(
t
)
p
BAS 125W
2
10
I
/
I
FDC
10
-
D = 0
0.005
0.01
0.02
1
0.05
0.1
0.2
0.5
Fmax
10
0
10
-7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
t
0
10
s
p
10
0
10
-7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
t
0
10
s
p
Semiconductor Group 3 Dec-20-1996
Page 4
BAS 125W
Forward current
I
F
= f (
T
*;
A
* Package mounted on epoxy
BAS 125-04W... (
100
mA
80
I
F
70
60
50
40
30
20
10
I
per diode)
F
T
)
S
T
S
T
A
0
0 20 40 60 80 100 120 °C 150
Permissible Pulse Load
BAS 125-04W...
3
10
K/W
R
thJS
2
10
1
10
R
THJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
= f(
t
p
TA,T
)
S
Permissible Pulse Load
I
Fmax
/
I
FDC
= f(
t
)
p
BAS 125-04W...
2
10
I
/
I
FDC
10
-
D = 0
0.005
0.01
0.02
1
0.05
0.1
0.2
0.5
Fmax
10
0
10
-7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
t
0
10
s
p
10
0
10
-7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
t
0
10
s
p
Semiconductor Group 4 Dec-20-1996
Page 5
BAS 125W
Forward Current
I
= f(
F
V
) Diode capacitance
F
f
= 1MHz
C
= f (
T
V
)
R
Reverse current
T
= Parameter
A
I
= f (
R
V
)
R
Differential forward resistance
f
= 10kHz
R
F
= f(
I
)
F
Semiconductor Group 5 Dec-20-1996
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