Page 1
Silicon Schottky Diodes BAS 125 …
● For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
● Integrated diffused guard ring
● Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BAS 125 Q62702-D131613 SOT-23
BAS 125-04 Q62702-D132114
BAS 125-05 Q62702-D132215
BAS 125-06 Q62702-D132316
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
02.96
Page 2
BAS 125 …
● For low-loss, fast-recovery, meter protection,
bias isolation and clamping applications
● Integrated diffused guard ring
● Low forward voltage
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
Marking
Pin Configuration
Package
(tape and reel)
BAS 125-07 Q62702-D132717
SOT-143
Maximum Ratings per Diode
Parameter Symbol Values Unit
Reverse voltage V
R 25 V
Forward current IF 100 mA
Surge forward current, t ≤ 10 ms IFSM 500
Total power dissipation, TS ≤ 25 ˚C
3)
Ptot 250 mW
Junction temperature Tj 150 ˚C
Storage temperature range T
stg – 55 … + 150
Thermal Resistance
1)
Junction - ambient
2)
Rth JA ≤ 725 K/W
Junction - soldering point Rth JS ≤ 565
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3)
450 mW per package.
Semiconductor Group 2
Page 3
Electrical Characteristics per Diode
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BAS 125 …
Parameter Symbol
R
I
R = 20 V
V
R = 25 V
V
VF
F = 1 mA
F = 10 mA
F = 35 mA
C
T – – 1.1
R = 0, f = 1 MHz
V
R
F –15–
F = 5 mA, f = 10 kHz
min. typ. max.
–
–
–
–
–
–
–
385
530
800
1
10
410
–
900
UnitValues
µAReverse current
mVForward voltage
pFDiode capacitance
ΩDifferential forward resistance
Semiconductor Group 3
Page 4
BAS 125 …
Forward current IF = f (VF)
Forward current IF = f (TS; TA*)
*Package mounted on alumina
BAS 125-04, -05, -06, -07
Forward current I
F = f (TS; TA*)
*Package mounted on alumina
BAS 125
Reverse current I
R = f (VR)
Semiconductor Group 4
Page 5
BAS 125 …
Diode capacitance CT = f (VR)
f = 1 MHz
Differential forward resistance RF = f (IF)
f = 10 kHz
Semiconductor Group 5
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