Datasheet BAS116.215 Specification

Page 1
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Page 2
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
BAS116
Low-leakage diode
Product data sheet Supersedes data of 1999 May 26
2003 Dec 12
Page 3
NXP Semiconductors Product data sheet
Low-leakage diode BAS116

FEATURES

Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 µs
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.

APPLICATION

Low leakage current applications in surface mounted circuits.

DESCRIPTION

Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD packa ge .

PINNING

PIN DESCRIPTION
1 anode 2 not connected 3 cathode
ns
21
3
Top view
Marking code:
JVp = made in Hong Kong;
2
n.c.
JVt = made in Malaysia; JVW = Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
1
3
MAM106

ORDERING INFORMATION

PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
BAS116 plastic surface mounted package; 3 leads SOT23

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V I
F
I
FRM
I
FSM
RRM R
repetitive peak reverse voltage 85 V continuous reverse voltage 75 V continuous forward current see Fig.2; note 1 215 mA repetitive peak forward current 500 mA non-repetitive peak forward current square wave; Tj = 25 °C prior to surge;
see
Fig.4 tp = 1 µs 4 A tp = 1 ms 1 A tp = 1 s 0.5 A
P
tot
T
stg
T
j
total power dissipation T
= 25 °C; note 1 250 mW
amb
storage temperature −65 +150 °C junction temperature 150 °C
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12 2
Page 4
NXP Semiconductors Product data sheet
Low-leakage diode BAS116

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
I
R
C
d
t
rr
forward voltage see Fig.3
IF = 1 mA 0.9 V IF = 10 mA 1 V IF = 50 mA 1 .1 V IF = 150 mA 1. 25 V
reverse current see Fig.5
VR = 75 V 0.003 5 nA
VR = 75 V; Tj = 150 °C 3 80 nA diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF reverse recovery time when switched from IF = 10 mA to IR = 10 mA;
R
= 100 ; measured at IR = 1 mA; see Fig.7
L
0.8 3 µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R R
th(j-tp) th(j-a)
thermal resistance from junction to tie-point 330 K/W thermal resistance from junction to ambient note 1 500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12 3
Page 5
NXP Semiconductors Product data sheet
Low-leakage diode BAS116

GRAPHICAL DATA

amb
MLB755
o
300
handbook, halfpage
I
F
(mA)
200
100
0
0 200
Device mounted on an FR4 printed-circuit board.
100
T ( C)
Fig.2 Maximum permissible continuous forw ard
current as a function of ambient temperature.
300
handbook, halfpage
I
F
MLB752 - 1
(mA)
200
(1) (2) (3)
100
0
0 1.6
(1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values.
0.8 1.20.4 V (V)
F
Fig.3 Forward current as a function of forward
voltage.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
1
10
1
Based on square wave currents; Tj = 25 °C prior to surge.
10
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
2
10
3
10
tp (µs)
4
10
2003 Dec 12 4
Page 6
NXP Semiconductors Product data sheet
Low-leakage diode BAS116
mlb754
I
(nA)
2
10
R
10
(1)
1
1
10
2
10
3
10
(2)
500
100
150 200
(°C)
T
j
(1) Maximum values. (2) Typical values. VR = 75 V.
Fig.5 Reverse current as a function of junction
temperature.
MBG526
C
(pF)
2
d
handbook, halfpage
1
0
01020155
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
R = 50
S
V = V I x R
RF S
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50
i
MGA881
t
r
10%
V
R
90%
input signal
t
p
t
I
F
t
rr
t
(1)
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery time test circuit and waveforms.
2003 Dec 12 5
Page 7
NXP Semiconductors Product data sheet
3
Low-leakage diode BAS116

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w
M
B
E
H
E
detail X
AB
Q
L
p
X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE VERSION
SOT23 TO-236AB
max.
0.1
b
cD
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
0.95
H
L
Qwv
1
2.5
2.1
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04 06-03-16
2003 Dec 12 6
Page 8
NXP Semiconductors Product data sheet
Low-leakage diode BAS116

DATA SHEET STATUS

DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
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Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC the device. Limiting values are stress ratings only an d operation of the device at these or any other conditions
2003 Dec 12 7
60134) may cause permanent damage to
Page 9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
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© NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands R76/04/pp8 Date of release: 2003 Dec 12 Document order number: 9397 750 12391
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