Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D122
BAS11; BAS12
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1996
1996 Sep 26
Page 2
Philips Semiconductors Product specification
Controlled avalanche rectifiers BAS11; BAS12
FEATURES
• Glass passivated
• High maximum operating
temperature
• Low leakage current
• Excellent stability
DESCRIPTION
Rectifier diodes in cavity free
cylindrical SOD91 glass packages,
incorporating Implotec
(1)
technology.
(1) Implotec is a trademark of Philips.
These packages are hermetically
sealed and fatigue free as coefficients
of expansion of all used parts are
matched.
• Available in ammo-pack.
k
Marking code BAS11: S11.
Marking code BAS12: S12.
a
MAM196
Fig.1 Simplified outline (SOD91) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BAS11 − 300 V
BAS12 − 400 V
V
RWM
working reverse voltage
BAS11 − 300 V
BAS12 − 400 V
V
R
continuous reverse voltage
BAS11 − 300 V
BAS12 − 400 V
I
F(AV)
average forward current averaged over any 20 ms period;
− 350 mA
Ttp=75°C; lead length = 10 mm;
see Figs 2 and 4
averaged over any 20 ms period;
T
=30°C; PCB mounting
amb
− 300 mA
(see Fig.8); see Figs 3 and 4
I
FSM
P
RRM
T
stg
T
j
non-repetitive peak forward current t = 10 ms half sinewave;
repetitive peak reverse power
dissipation
Tj=T
VR=V
t=10µs square wave; f = 50 Hz;
T
amb
prior to surge;
j max
RRMmax
=25°C
storage temperature −65 +150 °C
junction temperature −65 +150 °C
− 4A
− 75 W
1996 Sep 26 2 Not recommended for new designs
Page 3
Philips Semiconductors Product specification
Controlled avalanche rectifiers BAS11; BAS12
ELECTRICAL CHARACTERISTICS
=25°C; unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
forward voltage IF= 300 mA; Tj=T
I
= 300 mA; see Fig.5 −−1.1 V
F
reverse avalanche
IR= 0.1 mA
breakdown voltage
BAS11 330 −−V
BAS12 440 −−V
reverse current VR=V
V
R=VRRMmax
; see Fig.6 −−250 nA
RRMmax
; Tj= 125 °C; see Fig.6 −−10 µA
reverse recovery time when switched from IF= 0.5 A to
IR= 1 A; measured at IR= 0.25 A;
see Fig.9
diode capacitance VR= 0 V; f = 1 MHz; see Fig.7 − 20 −
; see Fig.5 −−1.0 V
jmax
−−1
µs
pF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 180 K/W
thermal resistance from junction to ambient note 1 340 K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.8.
For more information please refer to the
“General Part of associated Handbook”
.
1996 Sep 26 3 Not recommended for new designs
Page 4
Philips Semiconductors Product specification
Controlled avalanche rectifiers BAS11; BAS12
GRAPHICAL DATA
0.6
handbook, halfpage
I
F(AV)
(A)
0.4
0.2
0
0
Lead length 10 mm.
a =1.57; VR=V
40 200
RRMmax
80 120 160
; δ= 0.5.
MGD293
Ttp (oC)
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
T
MGD295
amb
0.4
handbook, halfpage
I
F(AV)
(A)
0.3
0.2
0.1
0
Device mounted as shown in Fig.8.
a =1.57; VR=V
40 200
0
; δ= 0.5.
RRMmax
80 120 160
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
(°C)
0.3
1.42
I
F(AV)
MGD292
(A)
0.5
handbook, halfpage
P
(W)
0.4
0.3
0.2
0.1
0
0 0.1 0.2 0.4
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
a = 3 2
; δ= 0.5.
2.5 1.57
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
handbook, halfpage
5
I
F
(A)
4
3
2
1
0
012
Solid line: Tj=25°C.
Dotted line: Tj= 150°C.
MGD294
V
(V)
F
Fig.5 Forward current as a function of forward
voltage; maximum values.
3
1996 Sep 26 4 Not recommended for new designs
Page 5
Philips Semiconductors Product specification
Controlled avalanche rectifiers BAS11; BAS12
150
Tj (
MGD297
o
C)
2
10
handbook, halfpage
I
R
(µA)
10
1
−1
10
VR=V
RRMmax
.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
10
MGD296 - 1
2
VR(V)
3
10
10
handbook, halfpage
C
d
(pF)
1
2000 50 100
f =1 MHz; Tj=25°C.
−1
110
10
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
Dimensions in mm.
50
25
7
50
2
3
MGA200
Fig.8 Device mounted on a printed-circuit board.
1996 Sep 26 5 Not recommended for new designs
Page 6
Philips Semiconductors Product specification
Controlled avalanche rectifiers BAS11; BAS12
I
I
(A)
0.25
R
(A)
0.5
0.5
1.0
F
t
rr
0
t
MAM057
handbook, full pagewidth
10 Ω
DUT
+
25 V
1 Ω
50 Ω
Input impedance oscilloscope: 1 MΩ, 22pF; tr≤ 7ns.
Source impedance: 50 Ω; tr≤ 15ns.
Fig.9 Test circuit and reverse recovery time waveform and definition.
1996 Sep 26 6 Not recommended for new designs
Page 7
Philips Semiconductors Product specification
Controlled avalanche rectifiers BAS11; BAS12
PACKAGE OUTLINE
handbook, full pagewidth
1.7
max
Dimensions in mm.
The marking band indicates the cathode.
29 min 29 min3.0 max
3.5 max
0.55
max
MBC053
Fig.10 SOD91.
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 26 7 Not recommended for new designs
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