Datasheet BAR80 Datasheet (Siemens)

Silicon RF Switching Diode

ll

Design for use in shunt configuration

l

Hight shunt signal isolation

l

Low shunt insertion loss

BAR 80

Type Marking Ordering code

(tape and reel)

BAR 80 AAs Q62702-A1084 C A C A MW-4

Maximum ratings
Parameter Symbol BAR 80 Unit

Reverse voltage
Forward current
Operating temperature range
Storage temperature range

Pin configuration
1 2 3 4

V

R 35 V

I

F 100 mA

T

op -55...+125 °C

T

stg

-55...+150 °C

Package

1)

1) Package mounted on alumina 15mm x 16.7mm x 0.7mm

Semiconductor Group 1 Edition A02, 27.02.95

BAR 80

Electrical characteristics

at

T

= 25 °C, unless otherwise specified.

A

Parameter Symbol Value Unit

min. typ. max.

Reverse current

V

R = 20 V

Forward voltage

I

F = 100 mA

Diode capacitance

V

R = 1 V,

V

R = 3 V,

f

= 1 MHz

f

= 1 MHz

Forward resistance f = 100MHz

I

F = 5 mA

I

V

C

r

R

--20

F

- 0.92 1

T

-

0.6

f

1

0.92

1.6

1.3

- 0.5 0.7

nA

V

pF

Ω

Series inductance to ground

Application information

Shunt signal isolation

I

F = 10 mA,

f

= 2 GHz,

R

=

R

G

Shunt insertion loss

V

R = 5 V,

f

= 2 GHz,

R

=

R

G

= 50 Ω

L

Configuration of the shunt-diode

= 50 Ω

L

L

s

nH

- 0.14 -

-

dB

-23-

I

L

dB

- 0.15 -

-A perfect ground is essential
for optimum isolation

-The anode pins should be used
as passage for RF

Semiconductor Group 2 Edition A02, 27.02.95

BAR 80

Forward current

mA

I

F

I

F

= f (

TS,T

) Forward resistance

A

f

= 100 MHz

T

S

T

A

r

= (

f

I

)

F

Dioden capacitance

f

= 1 MHz

C

= f (

T

T

T

S

A

V

)

R

Semiconductor Group 3 Edition A02, 27.02.95

BAR 80

Permissible pulse load

K/W

R

thJS

R

thJS

= f (

t

) Permissible pulse load

p

I

max

F

_______

I

DC

F

I

Fmax

/

I

FDC

= f (

t

)

p

t

p

t

p

Semiconductor Group 4 Edition A02, 27.02.95