Page 1
BAR 64 ... W
Semiconductor Group
Sep-04-19981
Silicon PIN Diode
• High voltage current controlled
RF resistor for RF attenuator and switches
• Frequency range above 1 MHz
• Low resistance and short carrier lifetime
• For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 64-04W
BAR 64-05W
BAR 64-06W
Type Marking Ordering Code Pin Configuration Package
BAR 64-04W
BAR 64-05W
BAR 64-06W
PPs
PRs
PSs
Q62702-A1264
Q62702-A1265
Q62702-A1266
1 = A1
1 = A1
1 = C1
2 = C2
2 = C2
2 = C2
SOT-3233=C1/A2
3 = C1/2
3 = A1/2
Maximum Ratings
Parameter Symbol UnitValue
V
V
R
200Diode reverse voltage
Forward current
I
F
100 mA
mW
Total power dissipation,
T
S
≤ 115 °C
P
tot
250
T
j
150 °CJunction temperature
- 55 ...+150Operating temperature range
T
op
Storage temperature
T
st
g
- 55 ...+150
Thermal Resistance
R
thJA
≤ 300
Junction - ambient
1)
K/W
R
thJS
≤ 140
Junction - soldering point
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 1998-11-01
Page 2
BAR 64 ... W
Semiconductor Group
Sep-04-19982
Electrical Characteristics at
T
A
= 25°C, unless otherwise specified.
Parameter ValuesSymbol Unit
max.typ.min.
DC characteristics
Breakdown voltage
I
(BR)
= 5 µA
- V-200
V
(BR)
- - 50
I
R
Reverse current
V
R
= 20 V
µA
Forward voltage
I
F
= 50 mA
V
F
- 1.1 mV-
AC characteristics
Diode capacitance
V
R
= 20 V, f = 1 MHz
-
C
T
0.23 pF0.35
Forward resistance
I
F
= 1 mA, f = 100 MHz
I
F
= 10 mA, f = 100 MHz
I
F
= 100 mA, f = 100 MHz
Ω
20
2.8
1.35
r
f
12.5
2.1
0.85
-
-
-
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
- - µs1.55
τ
rr
-Series inductance -
L
s
nH1.2
Semiconductor Group 2 1998-11-01
Page 3
BAR 64 ... W
Semiconductor Group
Sep-04-19983
Forward current
I
F
= f (
T
A
*;
T
S
)
* mounted on alumina
0 20 40 60 80 100 120
°C
150
TA,T
S
0
20
40
60
80
100
mA
140
I
F
5
0 20 40 60 80 100 120
°C
150
TA,T
S
0
20
40
60
80
100
mA
140
I
F
T
S
0 20 40 60 80 100 120
°C
150
TA,T
S
0
20
40
60
80
100
mA
140
I
F
T
A
0 20 40 60 80 100 120
°C
150
TA,T
S
0
20
40
60
80
100
mA
140
I
F
Permissible Pulse Load
R
thJS
= f(
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
= f(
t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
0
10
1
10
2
10
-
I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 3 1998-11-01
Page 4
BAR 64 ... W
Semiconductor Group
Sep-04-19984
Diode capacitance
CT = f (V
R
)
f
= 1MHz
0 5 10 15 20
V
30
V
R
0.0
0.1
0.2
0.3
0.4
pF
0.6
C
T
Forward resistance
r
f
= f(
I
F
)
f
= 100MHz
10
-2
10
-1
10
0
10
1
10
2
10
3
mA
I
F
-1
10
0
10
1
10
2
10
3
10
Ohm
R
F
Forward current
I
F
= f (
V
F
)
T
A
= parameter
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1.0
V
F
-2
10
-1
10
0
10
1
10
2
10
3
10
mA
I
F
Intermodulation intersept point
IP
3
= f (
I
F
)
f = parameter
10
-1
10
0
10
1
mA
I
F
1
10
2
10
dBm
IP
3
5
10
-1
10
0
10
1
mA
I
F
1
10
2
10
dBm
IP
3
f=1800MHz
f=900MHz
Semiconductor Group 4 1998-11-01
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