Page 1
Silicon PIN Diode
l
PIN diode for high speed switching of RF signals
l
Low forward resistance
l
Very low capacitance
l
For frequencies up to 3 GHz
BAR 63...
Type Marking Ordering code
(tape and reel)
Pin configuration
1 2 3
Package
BAR 63 G3 Q62702-A1036 A - C SOT-23
BAR 63-04 G4 Q62702-A1037 A C C/A
BAR 63-05 G5 Q62702-A1038 A A C/C
BAR 63-06 G6 Q62702-A1039 C C A/A
Maximum ratings
Parameter Symbol BAR 63 Unit
Reverse voltage
Forward current
Total Power dissipation TS ≤ 80°C
BAR 63-04,-05,-06 T
≤ 55°C
S
Operating temperature range
Storage temperature range
V
R 50 V
I
F
P
tot
100 mA
250
250
T
op
T
stg
-55 +150°C °C
-55...+150°C °C
mW
Thermal resistance
Junction-ambient
BAR63
BAR 63-04,-05,-06
Junction-soldering point
BAR64
BAR63-04,-05,-06
1)
R
th JA
K/W
≤ 450
≤ 540
R
th JS
≤ 280
≤ 380
1)
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group 1 Edition A01, 23.02.95
Page 2
BAR 63...
Electrical characteristics
at
T
= 25 °C, unless otherwise specified.
A
Parameter Symbol Value Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
= 5 µA
R
Reverse leakage
V
= 20 V
R
Forward voltage
I
= 100 mA
F
Diode capacitance
V
= 0 V, f = 100 MHz
R
Diode capacitance
V
= 5 V, f = 1 MHz
R
Forward resistance
I
= 5 mA, f = 100 MHz
F
I
= 10 mA, f = 100 MHz
F
Charge carrier lifetime
I
= 10 mA,
F
I
= 6 mA,
R
Series inductance
I
= 3 mA
R
V
I
V
C
C
r
τ
L
R
f
s
s
(BR)
F
T
T
50 - -
--50
- 0.95 1.2
- 0.3 -
- 0.21 0.3
-
-
1.2
1
2
-
-75-
- 1.4 - nH
V
nA
V
pF
pF
Ω
ns
Forward current
BAR63
mA
I
F
I
F
= f (
TA*TS)
T
T
A
Forward current
per each Diode BAR63-04,-05,-06
I
F
= f (
TA*TS)
mA
S
I
F
T
S
T
A
T
T
T
A
S
T
S
A
Semiconductor Group 2 Edition A01, 23.02.95
Page 3
Permissible pulse load
BAR63
K/W
R
thJS
R
thJS
= f (tp)
Permissible pulse load
BAR63
I
Fmax
_____
I
FDC
I
Fmax
/
BAR 63...
I
= f (
t
FDC
)
p
Permissible pulse load
BAR63-04,-05,-06
K/W
R
thJS
R
thJS
t
p
= f (tp)
Permissible pulse load
BAR63-04,-05,-06
I
F
max
______
I
DC
F
I
Fmax
/
t
p
I
FDC
= f (
t
)
p
t
p
t
p
Semiconductor Group 3 Edition A01, 23.02.95
Page 4
Forward current
3
10
[mA]
2
10
IF
1
10
0
10
-1
10
-2
10
I
= f(
F
85°C
BAR 63...
V
)
F
-40°C
25°C
-3
10
0.3 0.5 1 1.2
Forward resistance
f
= 100 MHz
r
VF
f
0.8
= f (
I
F
[V]
)
Diode capacitance
f
= 1 MHz.
C
= f (
T
V
)
R
Semiconductor Group 4 Edition A01, 23.02.95
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