Datasheet BAR43SFILM, BAR43FILM, BAR43CFILM, BAR43AFILM Datasheet (SGS Thomson Microelectronics)
Page 1
BAR42FILM
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose metal to silicon diodes featuring
very low turn-on voltage and fast switching.
K
BAR42FILM
BAR43FILM
K
BAR43CFILM
BAR43/A/C/SFILM
A
K1
K2
K1
A2
A2
N.C.
A
BAR43AFILM
A1
K2
A1
BAR43SFILM
SOT-23
(Plastic)
ABSOLUTE RATINGS(limiting values)
Symbol Parameter Value Unit
V
RRM
I
I
FSM
P
T
stg
Tj Maximum operating junction temperature * 150
T
Note 1: for double diodes, Ptot is the total power dissipation of both diodes.
dPtot
*:
dTj Rth j a
Repetitive peak reverse voltage 30 V
Continuous forward current 100 mA
F
Surge non repetitive forward current tp=10ms sinusoidal 750 mA
Power dissipation (note 1) T
tot
=25°C 250 mW
amb
Maximum storage temperature range - 65 to +150
Maximum temperature for soldering during 10s 260
L
<
thermal runaway condition for a diode on its own heatsink
−1()
°C
°C
°C
THERMAL RESISTANCE
Symbol Test conditions Value Unit
R
th(j-a)
* Mounted on epoxy board with recommended pad layout.
Junction-ambient * 500
°C/W
August 2001- Ed: 2B 1/4
Page 2
BAR42FILM BAR43/A/C/SFILM
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
VF*
IR** Tj = 25°CV
Tj = 25°C
Tj = 25°C
IR= 100µA
BAR 42FILM IF= 10 mA 0.35 0.4 V
30 V
IF= 50 mA 0.5 0.65
BAR 43FILM IF= 2 mA 0.26 0.33
IF= 15 mA 0.45
All IF= 100 mA 1
= 25V 500 nA
R
Tj = 100°C 100
µA
Pulse test: * tp = 380µs, δ <2%
** tp = 5 ms, δ <2%
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CTj=25°CV
trr Tj = 25°CI
= 1V F = 1MHz 7 pF
R
=10mA IR=10mA
F
5ns
Irr= 1mA RL= 100 Ω
η*Tj=25°CR
=50KΩ CL= 300 pF
L
80 %
F = 45Mhz Vi= 2V for BAR 43
* Detection effeciency
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level).
IFM(A)
2.00E-2
1.80E-2
1.60E-2
1.40E-2
1.20E-2
1.00E-2
8.00E-3
6.00E-3
4.00E-3
2.00E-3
0.00E+0
0.00 0.05 0.100.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
Tj=100°C
Tj=25°C
Tj=50°C
VFM(V)
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
IFM(A)
5E-1
Tj=100°C
1E-1
Tj=50°C
1E-2
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Tj=25°C
VFM(V)
2/4
Page 3
BAR42FILM BAR43/A/C/SFILM
Fig. 2: Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+2
Tj=100°C
1E+1
1E+0
1E-1
Tj=50°C
Tj=25°C
VR(V)
1E-2
0 5 10 15 20 25 30
Fig. 4: Junction c apac i t ance versus reverse
voltage applied (typical values).
C(pF)
10
5
F=1MHz
Tj=25°C
Fig. 3: Reverse leakage current versus junction
temperature.
IR(µA)
1E+4
VR=30V
1E+3
1E+2
1E+1
1E+0
1E-1
Tj(°C)
1E-2
0 25 50 75 100 125 150
Fig. 5: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
FR4withrecommendedpadlayout, e(Cu)=35µm).
Zth(j-a)/Rth(j-a)
1.00
δ = 0.5
δ = 0.2
2
VR(V)
1
12 5102030
Fig. 6: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board F R 4, c opper thic k nes s :
35µm).
Rth(j-a) (°C/W)
350
300
250
200
S(Cu) (mm )
150
0 5 10 15 20 25 30 35 40 45 50
P=0.25W
0.10
δ= 0.1
T
Single pulse
tp(s)
δ
=tp/T
0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2
tp
3/4
Page 4
BAR42FILM BAR43/A/C/SFILM
PACKAGEMECHANICAL DATA
SOT-23(Plastic)
E
e
B
S
FOOT PRINT DIMENSIONS
0.9
0.035
1.9
2.35
0.92
1.45
0.037
0.075
A
REF.
Millimeters Inches
DIMENSIONS
Min. Max. Min. Max.
e1
D
A 0.89 1.4 0.035 0.055
A1 0 0.1 0 0.004
B 0.3 0.51 0.012 0.02
A1
L
c 0.085 0.18 0.003 0.007
D 2.75 3.04 0.108 0.12
e 0.85 1.05 0.033 0.041
e1 1.7 2.1 0.067 0.083
H
E 1.2 1.6 0.047 0.063
H 2.1 2.75 0.083 0.108
c
L 0.6typ. 0.024 typ.
S 0.35 0.65 0.014 0.026
0.9
0.035
1.1
0.043
mm
inch
1.1
0.043
0.9
0.035
Ordering type Marking Package Weight Base qty Delivery mode
BAR42FILM D94 SOT-23 0.01g 3000 Tape & reel
BAR43FILM D95 SOT-23 0.01g 3000 Tape & reel
BAR43AFILM DB1 SOT-23 0.01g 3000 Tape & reel
BAR43CFILM DB2 SOT-23 0.01g 3000 Tape & reel
BAR43SFILM DA5 SOT-23 0.01g 3000 Tape & reel
Epoxy meets UL94,V0
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