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BAR 28
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction di ode featuring high breakdown, low turn-on voltage and ultrafast s witc hing.
Primarly intended f or high level UHF/V HF detection
and pulse application with broad dynamic range.
Matched batches are available on request .
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
FSM
T
RRM
I
F
stg
T
T
L
Repetitive Peak Reverse Voltage 70 V
Forward Continuous Current*
Surge non Repetitive Forward Current*
T
t
p
a
≤ 1s
= 25 °C
Storage and Junction Temperature Range - 65 to 200
j
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
DO 35
(Glass)
15 mA
50 mA
- 65 to 200
230
°C
°C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 400
ELECTRICAL CHARACTERISTICS
STATIC CHARACT ERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
* *
F
I
* *
R
T
= 25°CI
amb
= 25°CI
T
amb
T
= 25°CI
amb
= 25°CV
T
amb
= 10µA
R
= 1mA
F
= 15mA
F
= 50V
R
70 V
0.41 V
1
0.2
DYNAMIC CHARACTE RIST ICS
Symbol Test Conditions Min. Typ. Max. Unit
C
τ
* On infinite heatsink with 4mm lead length
** Pulse test: t
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
T
= 25°CV
amb
= 25°CI
T
amb
≤ 300µs δ < 2%.
p
= 0V f = 1MHz
R
= 5mA Krakauer Method
F
November 1994
2pF
100 ps
°C/W
µA
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BAR 28
Figure 1. Forward current versus forward
voltage at l ow level (typ ical val ues) .
Figure 2. Capacitance C versus reverse
applied voltage V
(typical values).
R
Figure 3. Reverse current versus ambient
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typ ical val ues).
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PACKAGE MECHANICAL DATA
DO 35 Glass
BAR 28
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
3.050 4.500 0.120 0.11 7
B
12.7 0.5 00
∅ C
1.530 2.000 0.060 0.079
∅ D
0.458 0.558 0.018 0.022
E 1.27
BA B
note 1
E
/
O
D
note 2
E
note 1
O
/
D
NOTES
1 - The lead diameter ∅ D is not controlled over zone E
2 - The minimum axial lengh within which the device may be
placed with its leads bent at right angles is 0.59" (15 mm )
0.050
/
O
C
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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