Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
, halfpage
M3D119
BAQ800
AM PIN diode
Product specification
File under Discrete Semiconductors, SC01
1997 Aug 26
Page 2
Philips Semiconductors Product specification
AM PIN diode BAQ800
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1)
technology.
This package is hermetically sealed
and stress free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
• Available in ammopack.
handbook, 4 columns
ak
MAM123
APPLICATIONS
• RF attenuator with low distortion for
Fig.1 Simplified outline (SOD81) and symbol.
frequencies above 100 kHz.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
R
I
F(AV)
repetitive peak reverse voltage − 100 V
continuous reverse voltage − 100 V
average forward current Ttp=25°C; lead length = 10 mm;
− 1.25 A
see Fig.2
T
=60°C; printed-circuit board
amb
− 600 mA
mounting (see Fig.17); see Fig.3
T
stg
T
j
storage temperature −65 +175 °C
junction temperature −65 +150 °C
1997 Aug 26 2
Page 3
Philips Semiconductors Product specification
AM PIN diode BAQ800
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified; all characteristics must be tested in the dark because of the light sensitivity
j
of this product.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
τ charge carrier life time when switched from I
C
d
r
D
r
s
forward voltage IF= 100 mA; see Figs 4 and 5 − 0.9 1.1 V
I
= 100 mA; Tj=T
F
j max
;
− 0.7 0.9 V
see Figs 4 and 5
reverse current VR= 100 V; see Fig.14 −−0.1 µA
V
= 100 V; Tj= 125 °C; see Fig.14 −−30 µA
R
= 10 mA to
F
10 20 −µs
IR= 6 mA; measured at 10% of IR;
see Fig.15
diode capacitance f = 1 MHz; see Figs 6, 7, 8 and 9
V
=0 − 10 12 pF
R
V
=2V − 56pF
R
diode forward resistance f = 100 kHz; see Figs 10 and 16
I
=10µA − 3100 6000 Ω
F
I
= 100 µA − 380 800 Ω
F
I
=1mA − 42 80 Ω
F
I
=10mA − 510Ω
F
diode series resistance f = 100 kHz; see Figs 11, 12 and 13
V
= 0 1000 2200 − kΩ
R
V
= 2 V 5000 11000 − kΩ
R
f = 1 MHz; see Figs 11,12and13
V
= 0 25 50 − kΩ
R
= 2 V 100 220 − kΩ
V
R
THERMAL CHARACTERISTICS
All characteristics must be tested in the dark because of the light sensitivity of this product.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 60 K/W
thermal resistance from junction to ambient note 1 120 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the
“General Part of Handbook SC01”
.
1997 Aug 26 3
Page 4
Philips Semiconductors Product specification
AM PIN diode BAQ800
GRAPHICAL DATA
1.5
handbook, halfpage
I
F(AV)
(A)
1.0
0.5
0
0 200
DC application.
100
Ttp (°C)
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature.
MGG498
1.5
handbook, halfpage
I
F(AV)
(A)
1.0
0.5
0
0
DC application.
100
T
amb
MGG499
(°C)
Fig.3 Maximum permissible average forward
current as a function of ambient temperature.
200
4
10
handbook, halfpage
I
F
(mA)
3
10
2
10
10
1
−1
10
−2
10
0
Dotted line: Tj= 150°C.
Solid line: Tj=25°C.
Fig.4 Forward voltage as a function of
MGG500
0.4 2.00.8 1.2 1.6
VF (V)
forward current; typical values.
4
10
handbook, halfpage
I
F
(mA)
3
10
2
10
10
1
−1
10
−2
10
0 0.4 2.00.8 1.2 1.6
Dotted line: Tj= 150°C.
Solid line: Tj=25°C.
Fig.5 Forward voltage as a function of
forward current; maximum values.
MGG501
VF (V)
1997 Aug 26 4
Page 5
Philips Semiconductors Product specification
AM PIN diode BAQ800
12
handbook, halfpage
C
d
(pF)
8
4
0
010
f = 1 MHz; Tj=25°C.
2468
Fig.6 Diode capacitance as a function of
reverse voltage; typical values.
MGG503
VR (V)
12
handbook, halfpage
C
d
(pF)
8
4
0
10
Tj=25°C.
(1) VR=0.
(2) VR=2V.
Fig.7 Diode capacitance as a function of
(1)
(2)
2
10
3
10
frequency; typical values.
f (kHz)
MGL101
4
10
24
handbook, halfpage
C
d
(pF)
20
16
12
8
4
0
2
10
(1) Tj=85°C.
(2) Tj=25°C.
(3) Tj= −40°C.
VR=0.
(1)
(2)
(3)
Fig.8 Diode capacitance as a function of
frequency; typical values.
f (kHz)
MGK448
f (kHz)
MGK449
3
10
handbook, halfpage
3
10
6
C
d
(pF)
5
4
3
2
1
0
2
10
(1) Tj=85°C.
(2) Tj=25°C.
(3) Tj= −40°C.
VR=2V.
(1)
(2)
(3)
Fig.9 Diode capacitance as a function of
frequency; typical values.
1997 Aug 26 5
Page 6
Philips Semiconductors Product specification
AM PIN diode BAQ800
4
10
handbook, halfpage
r
D
(Ω)
3
10
2
10
MGG504
10
1
10 10
2
3
10
IF (µA)
f =100 kHz; see Fig.16.
Fig.10 Diode forward resistance as a function of
forward current; typical values.
5
10
handbook, halfpage
r
s
MGG505
(kΩ)
4
10
3
10
2
10
4
10
10
10 10
2
3
10
f (kHz)
4
10
Tj=25°C.
Solid line: VR=0.
Dotted line: VR=2V.
Fig.11 Diode series resistance as a function of
frequency; typical values.
5
10
handbook, halfpage
r
s
(kΩ)
4
10
3
10
2
10
10
10 10
(1)
(2)
(3)
2
3
10
f (kHz)
(1) Tj= −40 °C.
(2) Tj=25°C.
(3) Tj=85°C.
VR=0.
Fig.12 Diode series resistance as a function of
frequency; typical values.
MGK447
(1)
(2)
(3)
f (kHz)
MGK446
4
10
5
10
handbook, halfpage
r
s
(kΩ)
4
10
3
10
2
10
4
10
10
10 10
2
3
10
(1) Tj= −40 °C.
(2) Tj=25°C.
(3) Tj=85°C.
VR=2V.
Fig.13 Diode series resistance as a function of
frequency; typical values.
1997 Aug 26 6
Page 7
Philips Semiconductors Product specification
AM PIN diode BAQ800
2
10
handbook, halfpage
I
R
(µA)
10
1
−1
10
VR = V
RRMmax.
MGG502
Tj (°C)
Fig.14 Reverse current as a function of junction
temperature; maximum values.
1500 50 100
1997 Aug 26 7
Page 8
Philips Semiconductors Product specification
AM PIN diode BAQ800
handbook, full pagewidth
10 µF
pulse
f = 1 kHz
Input impedance of oscilloscope: 1 MΩ, 22 pF; tr≤ 7 ns.
Source impedance: 50 Ω; tr≤ 15 ns.
DUT
10 mA
Fig.15 Charge carrier life time test circuit and definition.
10 Ω
I
F
(mA)
10%
I
R
(mA)
90%
10
τ
0
6
t
MGG506
1 µF
handbook, halfpage
100
kHz
50 Ω
50 Ω
R1
V
V
in
IF (mA) R1 (Ω) R2 (kΩ)
I
R2
F
DUT
out
MGG507
0.1 3000 100
1 300 10
10 30 1
11 V
Fig.16 Diode forward resistance test circuit.
1997 Aug 26 8
handbook, halfpage
Dimensions in mm.
50
25
7
50
2
3
MGA200
Fig.17 Device mounted on a printed-circuit board.
Page 9
Philips Semiconductors Product specification
AM PIN diode BAQ800
PACKAGE OUTLINE
Hermetically sealed glass package;
TM(1)
Implotec
DIMENSIONS (mm are the original dimensions)
UNIT
mm
Note
1. Implotec is a trademark of Philips.
2. The marking band indicates the cathode.
VERSION
technology; axial leaded; 2 leads
max.
0.81
OUTLINE
SOD81
b
D
max.
G
max.
3.82.15
IEC JEDEC EIAJ
G
max.
528
SOD81
G
1
(2)
ka
b
LD L
L
1
min.
REFERENCES
G
0 1 2 mm
scale
EUROPEAN
PROJECTION
ISSUE DATE
97-06-20
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Aug 26 9
Page 10
Philips Semiconductors Product specification
AM PIN diode BAQ800
NOTES
1997 Aug 26 10
Page 11
Philips Semiconductors Product specification
AM PIN diode BAQ800
NOTES
1997 Aug 26 11
Page 12
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© Philips Electronics N.V. 1997 SCA55
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Printed in The Netherlands 117027/1200/01/pp12 Date of release: 1997 Aug 26 Document order number: 9397 750 02774
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