Page 1
Silicon Planar Diodes
R
F
F
Features
D
Low differential forward resistance
D
Low diode capacitance
D
High reverse impedance
D
Quadro Melf package
BA982.BA983
Vishay Telefunken
Applications
Band switching in VHF–tuners
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage V
Forward current I
Junction temperature T
Storage temperature range T
R
F
j
stg
35 V
100 mA
150
–55...+150
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
500 K/W
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA V
Reverse current VR=20V I
Diode capacitance f=100MHz, VR=1V C
f=100MHz, VR=3V BA982 C
BA983 C
Differential forward f=200MHz, IF=3mA BA982 r
resistance
BA983 r
f=200MHz, IF=10mA BA982 r
BA983 r
F
R
D
D
D
f
f
f
f
96 12009
°
C
°
C
1 V
50 nA
1.5 pF
1.25 pF
1.2 pF
0.7
1.2
0.5
0.9
W
W
W
W
Document Number 85534
Rev. 2, 01-Apr-99 1 (3)
www.vishay.de • FaxBack +1-408-970-5600
Page 2
BA982.BA983
Vishay Telefunken
100
W
10
1
f
r – Differential Forward Resistance ( )
0.1
0.1 1 10
94 9076
IF – Forward Current ( mA )
BA 983
f=200 MHz
T
j
Figure 1. Differential Forward Resistance vs.
Forward Current
Dimensions in mm
=25°C
BA 982
100
3.0
2.5
2.0
1.5
1.0
D
C – Diode Capacitance ( pF )
94 9077
BA 983
0.5
0
0.1 1 10
VR – Reverse Voltage ( V )
f=100 MHz
T
=25°C
j
BA 982
100
Figure 2. Diode Capacitance vs. Reverse Voltage
96 12071
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85534
Rev. 2, 01-Apr-992 (3)
Page 3
BA982.BA983
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use V ishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly , any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85534
Rev. 2, 01-Apr-99 3 (3)
www.vishay.de • FaxBack +1-408-970-5600
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