Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D176
BA316; BA317; BA318
High-speed diodes
Product specification
Supersedes data of April 1996
1996 Sep 03
Page 2
Philips Semiconductors Product specification
High-speed diodes BA316; BA317; BA318
FEATURES
• Hermetically sealed leaded glass
SOD27 (DO-35) package
• High switching speed: max. 4 ns
DESCRIPTION
The BA316, BA317, BA318 are high-speed switching diodes fabricated in
planar technology, and encapsulated in hermetically sealed leaded glass
SOD27 (DO-35) packages.
• General application
• Continuous reverse voltage: 10 V,
30 V, 50 V
• Repetitive peak reverse voltage:
max. 15 V, 40 V, 60 V
• Repetitive peak forward current:
handbook, halfpage
k
a
MAM246
max. 225 mA.
The diodes are type branded.
APPLICATIONS
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
• High-speed switching.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage −
BA316 − 15 V
BA317 − 40 V
BA318 − 60 V
V
R
continuous reverse voltage
BA316 − 10 V
BA317 − 30 V
BA318 − 50 V
I
F
I
FRM
I
FSM
continuous forward current see Fig.2; note 1 − 100 mA
repetitive peak forward current − 225 mA
non-repetitive peak forward current square wave; Tj=25°C prior to
surge; see Fig.4
t=1µs − 4A
t=1ms − 1A
t=1s − 0.5 A
P
tot
T
stg
T
j
total power dissipation T
=25°C; note 1 − 350 mW
amb
storage temperature −65 +200 °C
junction temperature − 200 °C
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Sep 03 2
Page 3
Philips Semiconductors Product specification
High-speed diodes BA316; BA317; BA318
ELECTRICAL CHARACTERISTICS
T
=25°C; unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
F
I
R
C
d
t
rr
V
fr
forward voltage see Fig.3
I
=1mA − 700 mV
F
I
=10mA − 850 mV
F
= 100 mA − 1100 mV
I
F
reverse current see Fig.5
BA316 V
BA317 V
BA318 V
=10V − 200 nA
R
=10V; Tj= 150 °C − 100 µA
V
R
=10V − 50 nA
R
V
=30V − 200 nA
R
=30V; Tj= 150 °C − 100 µA
V
R
=30V − 50 nA
R
V
=50V − 200 nA
R
V
=50V; Tj= 150 °C − 100 µA
R
diode capacitance f = 1 MHz; VR= 0; see Fig.6 − 2pF
reverse recovery time when switched from IF= 10 mA to
− 4ns
IR= 60 mA; RL= 100 Ω;
measured at IR= 1 mA; see Fig.7
forward recovery voltage when switched from IF= 50 mA;
− 2.5 V
tr= 20 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length 10 mm 240 K/W
thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03 3
Page 4
Philips Semiconductors Product specification
High-speed diodes BA316; BA317; BA318
GRAPHICAL DATA
amb
MBG452
(oC)
200
handbook, halfpage
I
F
(mA)
100
0
0 100 200
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
T
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
300
handbook, halfpage
I
F
(mA)
200
100
0
012
(1) Tj= 175 °C; typical values.
(2) Tj=25°C; typical values.
(3) Tj=25°C; maximum values.
(1) (2) (3)
MBG465
VF (V)
Fig.3 Forward current as a function of forward
voltage.
2
10
handbook, full pagewidth
I
FSM
(A)
10
1
−1
10
1
Based on square wave currents.
Tj=25°C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
MBG704
10
2
10
3
10
tp (µs)
4
10
1996 Sep 03 4
Page 5
Philips Semiconductors Product specification
High-speed diodes BA316; BA317; BA318
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
−1
10
−2
10
0 100
VR=V
Solid line; maximum values.
Dotted line; typical values.
Rmax
.
Tj (
MGD008
o
C)
Fig.5 Reverse current as a function of junction
temperature.
200
1.2
handbook, halfpage
C
d
(pF)
1.0
0.8
0.6
0.4
01020
f = 1 MHz; Tj=25°C.
MGD004
VR (V)
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03 5
Page 6
Philips Semiconductors Product specification
High-speed diodes BA316; BA317; BA318
handbook, full pagewidth
R = 50SΩ
V = V I x R
RF S
(1) IR= 1 mA.
I
F
D.U.T.
SAMPLING
OSCILLOSCOPE
R = 50iΩ
MGA881
t
r
10%
V
R
90%
t
p
input signal
Fig.7 Reverse recovery voltage test circuit and waveforms.
t
I
F
t
rr
t
(1)
output signal
I
R = 50SΩ
Ω1 k Ω450
D.U.T.
I
OSCILLOSCOPE
R = 50iΩ
MGA882
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 03 6
10%
t
r
90%
t
p
input
signal
V
V
fr
t
t
output
signal
Page 7
Philips Semiconductors Product specification
High-speed diodes BA316; BA317; BA318
PACKAGE OUTLINE
andbook, full pagewidth
Dimensions in mm.
1.85
max
25.4 min
4.25
max
25.4 min
0.56
max
MLA428 - 1
Fig.9 SOD27 (DO-35).
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Sep 03 7
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