Datasheet BA314 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D176

BA314

Low-voltage stabistor

Product specification
Supersedes data of April 1992

1996 Mar 21

File under Discrete Semiconductors, SC01

Philips Semiconductors Product specification

Low-voltage stabistor BA314

FEATURES

• Low-voltage stabilization

• Forward voltage range:

DESCRIPTION

Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass
package.

610 mV to 940 mV

• Total power dissipation:
max. 400 mW.

APPLICATIONS

• Low-voltage stabilization e.g.

handbook, halfpage

k

a

MAM246

– Bias stabilizer in class-B output

stages

Diodes are type branded.

– Clipping
– Clamping

Fig.1 Simplified outline (SOD27; DO-35) and symbol.

– Meter protection.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

I

F

P

tot

T

stg

T

j

continuous reverse voltage − 5V
continuous forward current − 200 mA
total power dissipation T

=25°C − 400 mW

amb

storage temperature −65 +200 °C
junction temperature − 200 °C

1996 Mar 21 2

Philips Semiconductors Product specification

Low-voltage stabistor BA314

ELECTRICAL CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

I

R

r

dif

S

F

C

d

forward voltage see Fig.2

= 0.1 mA 610 − 690 mV

I

F

= 1 mA 680 − 760 mV

I

F

= 5 mA 730 − 810 mV

I

F

= 10 mA 750 − 830 mV

I

F

= 100 mA 850 − 940 mV

I

F

reverse current VR=4V −− 5µA
differential resistance IF= 1 mA; f = 1 kHz − 30 −Ω

= 10 mA; f = 1 kHz − 3.5 6 Ω

I

F

temperature coefficient IF=1mA −−1.8 − mV/K
diode capacitance VR=0V; f=1MHz −−140 pF

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R
R

th j-tp
th j-a

thermal resistance from junction to tie-point 8 mm from the body 300 K/W
thermal resistance from junction to ambient lead length 10 mm 380 K/W

1996 Mar 21 3

Philips Semiconductors Product specification

Low-voltage stabistor BA314

GRAPHICAL DATA

2

10

handbook, halfpage

I

F

(mA)

10

1

−1

10

0.2

Tj=25°C.
(1) Minimum values.
(2) Maximum values.

Fig.2 Forward current as a function of

(1)

(2)

0.4 0.6 0.8 1.0

forward voltage.

MBG519

VF (V)

1.2

1996 Mar 21 4

Philips Semiconductors Product specification

Low-voltage stabistor BA314

PACKAGE OUTLINE

ndbook, full pagewidth

Dimensions in mm.
Diodes are type branded.

1.85
max

25.4 min

4.25
max

25.4 min

0.56
max

MLA428 - 1

Fig.3 SOD27 (DO-35).

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Mar 21 5