Page 1
LITE-ON
SEMICONDUCTOR
B120 thru B160
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
FEATURES
For surface mounted applications
Metal-Semiconductor junction with guardring
Epitaxial construction
Very Low forward voltage drop
High current capability
Plastic material has UL flammability classification
94V-0
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANI CAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
REVERSE VOLTAGE FORWARD CURRENT -
SMA
A
B
G
H
E
C
D
F
DIM. MIN. MAX.
A
B
C
D
E
F
G
H
All Dimensions in millimeter
20 to 60
1.0
Ampere
SMA
4.06 4.57
1.27
4.83 5.59
0.05 0.20
2.01 2.62
0.76 1.52
Volts
2.92 2.29
1.63
0.31 0.15
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, der a te current by 20%
=25 C
SYMBOL
V
V
V
I
I
R
T
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Vol tage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum forwar d Voltage at 1.0A D C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Lead.
@T
@T
@T
L
=100 C
J
J
=100 C
RRM
RMS
DC
(AV)
FSM
V
R
I
C
0JL
T
STG
B120
20
14
20
F
J
J
B130
30
21
30
0.5
B140
40
28
40
1.0
30
0.5
10
110
20
-55 to +125
-55 to +150
0.7
B160
60
42
60
B150
50
35
50
REV. 2, 01-Dec-2000, KSHA01
UNIT
V
V
V
A
A
V
mA
pF
C/W
C
C
Page 2
RATING AND CHARACTERISTIC CURVES
B120 thru B160
FIG.1 - FORWARD CURRENT DERATING CURVE
1.00
0.75
0.50
0.25
AVERAGE FORWARD CURRENT
AMPERES
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.00
20 60 80 100 120
40 140
LEAD TEMPERATURE , C
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
10
B120 to B140
1.0
B150 to B160
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
30
20
10
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC METHOD)
0
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 1002
20
NUMBER OF CYCLES A T 60Hz
FIG.4 - TYPICAL JUNCTION CAPACITANCE
1000
100
1.8
CAPACITANCE , (pF)
TJ= 25 C F= 1MHz
10
0.1
1.0 4.0
10.0
100
REVERSE VOLTAGE , (VOLTS)
0.1
INSTANTANEOUS FORWARD CURRENT ,(A)
.01
0
0.2 0.4
0.6 0.8 1.0
TJ= 25 C
PULSEWIDTH:300us
PULSEWIDTH:300us
1.6
1.4
1.2
INSTANTANEOUS FORWARD VOLTAGE , (VOLTS)
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
1.0
REVERSE CUR RE NT, (mA)
0.1
0.01
INSTANTANEOUS
0.001
0
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
20 40
TJ= 125 C
TJ= 100 C
TJ= 25 C
60 80 100
120
140
REV. 2, 01-Dec-2000, KSHA01
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