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AVS10
AUTOMATIC VOLTAGE SWITCH (SMPS < 300W)
CONTROLLER
■ 50/60Hz FULL COMPATIBILITY
■ INTEGRATED VOLTAGE REGULATOR
■ TRIGGERING PULSE TRAIN OF THE TRIAC
■ PARASITIC FILTER
■ LOW POWER CONSUMPTION
TRIAC
■ HIGH EFFICIENCY AND SAFETY SWITCHING
■ UNINSULATED PACKAGE : AVS10CB
■ INSULATED PACKAGE 2500V
(RMS
) : AVS10CBI
■ V
DRM
= ± 600V
■ I
T(RMS)
:8A
March 1995
DESCRIPTION
The AVS10 kit is an automatic mains selector
(110/220V AC) to be used in SMPS < 300 W. It
is composedof 2 devices :
• The Controller is optimized for low consump-
tion and high security triggering of the triac.
When connected to V
SS
, the mode input activates an additional option. If the main power
drops from 220V to 110V, the triac control remains locked to the 220V mode and avoids
any high voltage spike when the voltage is restored to 220V.
When connected to V
DD
, the mode input de-
sactivates this option.
• The TRIAC is specially designed for this application. An optimization between sensitivity and
dynamic parameters of the triac gate highly
reduces the losses of supply resistor and allows excellent immunity against disturbances.
P
DIP8
(Plas tic)
B
TO 220AB
(Plastic)
A1
A2
G
PIN CONNECTION
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ABSOLUTE MAXIMUM RATINGS
CONTROLLER AVS1ACP08
(1) Gate supply: IG= 100mA – di/dt = 1A/µs * For either polarity of electrode A2voltage with reference to electrode A
1
(2) Tj = 110°C
Symb o l Parame ter Val ue Uni t
Min. Max.
V
SS
Supplyvoltage -12 0.5 V
VI/V
O
I / Ovoltage VSS-0.5 0.5 V
II/I
O
I / Ocurrent - 40 + 40 mA
T
stg
StorageTemperature -60 + 150 °C
T
oper
Operating Temperature code ”C ” 0 + 70 °C
TRIAC AVS10CB / AVS10CBI Tj= +25°C (unlessotherwise specified)
Symb o l Parame ter Val ue Uni t
V
DRM
Repetitive peak off-state voltage (2) ± 600 V
I
T(RMS)
RMSon-state current
(360°conduction angle)
AVS10CB TC=80°C
8A
AVS10CBI TC=70°C
I
TSM
Non repetitivesurge peak on-state current
(Tjinitial= 25°C)
t = 8.3ms
t = 10ms
85
80
A
I2tI
2
t value t = 10ms 32 A2s
dI/dt Criticalrate of rise of on-state current(1)
Repetitive
F = 50Hz
20
A/µs
Non
Repetitive
100
dv/dt* Linearslope up to 0.67 V
DRM
Gateopen Tj=110°C50V/µs
T
stg
T
j
StorageTemperature
Operating Junction Temperature
-40 + 150
0 + 110
°C
BLOCK DIAGRAM
Q
Q
Reset
CP
S
CP
OSC/IN
OSC/OUT
MODE
Parasitic
Filter
Peak Voltage
Dectector
AVS1ACP08
A1
A2
Triggering
Time
Controller
AVS10CB
or
AVS10CBI
Supply
1
4
8
2
3
Oscillator
Zero Crossing
Detector
5
3
4
2
1
V
V
G
G
DD
7
DD
V
V
V
M
SS
Mains
mode
Controller
MR
AVS10
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* For either polarity of electrode A2voltage with reference to electrode A1.
DC GENERAL ELECTRICAL CHARACTERISTICS
TRIAC AVS10CB / AVS10CBI
Symbol Parameter Value Unit
Min. Max.
V
GD
VD=V
DRMRL
= 3.3kΩ Pulse duration> 20µs Tj = 110°C 0.2 V
VTM*ITM= 11A tp= 10ms Tj = 25 °C 1.75 V
I
DRM
*V
DRM
rated Gateopen
Tj = 25 °C10
µA
Tj = 110°C 500
THERMAL RESISTANCES
TRIAC AVS10CB / AVS10CBI
Symbol Parameter Value Unit
Rth(j-a) Junction-to-ambient 60 °C/W
Rth (j-c) DC Junction-to-case for DC
AVS10CB 3.5
°C/W
AVS10CBI 4.4
Rth (j-c) AC Junction-to-case for 360° conduction angle( F= 50Hz)
AVS10CB 2.6
°C/W
AVS10CBI 3.3
AV S10
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Fig.1 :Maximum RMS power dissipation versus RMS onstate current(F = 60Hz).
(Curves are cut off by (dI/dt)climitation)
Fig.2 :Correlation betweenmaximum mean power dissipation and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistancesheatsink + contact
(AVS10CB).
Fig. 4 :Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and corresponding
value of I2t.
Fig. 5 :On-state characteristics(maximum values).
Fig.3 :Correlation between maximum meanpowerdissipa-
tion and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink + contact
(AVS10CBI).
AVS10
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Symbol Parameter Value Unit
Min Typ M ax
VSS(pin1) (Vreg) Shuntregulator - 10 - 9 - 8 V
ISS(pin1) (Vreg)
(@ VSS= 9V)
Supply current 0.4 30 mA
ISS(pin1)
(@ triac gate non
connected)
Quiescentcurrent 0.7 mA
f (pin3)
(@ R =91kΩ)
(C = 100pF)
Oscillatorfrequency 42 44 46 kHz
VM(pin8) Vth(3) Peak voltage of detectionhigh-threshold 4.08 4.25 4.42 V
VM(pin8) Vh (3) Peakvoltage of detectionhysteresis 0.370 0.4 0.420 V
(1) VM(pin 8) Vth (3) Zero-crossing detection high-threshold 95 110 125 mV
VM(pin8) Vh (3) Zero-crossing detection hysteresis 27 50 80 mV
(2) Vrazht (4) Power-on-reset activation threshold Vreg x 0.89 V
(2) Vrazlt (4) Power-down-reset activation threshold 3 6.5 V
Mode(pin 7)
V
IL
(4)
V
IH
(4) 0.7 Vreg
0.3 Vreg
V
VG(pin5)
VOL(IVG= 25mA)
Leakage current (VG=VDD)
650
+10
mV
µA
DC GENERAL ELECTRICAL CHARACTERISTICS (continued)
CONTROLLER AVS1ACP08 T
oper
=25°C (unless otherwise specified)
NOTES :
(1) : This value gives a typical noise immunity on the zero-crossing detectionof 110mV x 1018/18 = 6.20Von the main supply
(2) : See following diagram
(3) : Voltage referred to V
SS
(4) : Voltage referred to V
DD
POWER-ON AND POWER-OFF RESET BEHAVIOUR
0V 0V
-2.7V
-2.7V
Vrazht
Vrazlt
Vreg = V - V
SS DD
Normal operation
Power-on
reset
Undetermined Undetermined
Reset
power-off
AVS10
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option
7
5
4
NTC
NTC
110 V
or
220V
G
1N
4007
R1
1M
1%
8
3
21
AVS10
33µF
16V
A
1
A
2
AVS10CB
or AVS10CBI
V
V
DD
SS
V
DD
V
G
V
M
91k 1 %
100pF 5 %
V
SS
AVS1ACP08
2
x
9.1K
1W
R2
18K
1%
390
TYPICAL APPLICATION
ORDERING INFORMATION
AVS10
CONTROLLER
AVS 1A C P08
AVS 10 C B I
TRIAC
OPERATING TEMPERATURE :
C = 0/70 °C
OPERATINGTEMPERATURE :
C= 0/70°C
IDENTIFICATION
PACKAGE:
DIP 8
AUTOMATIC
VOLTAGE
SWITCH
PACKAGE B:
UNINSULATED TO220
INSULATED Suffix
IDENTIFICATION
AUTOMATIC
VOLTAGE
SWITCH
AVS10
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PACKAGE MECHANICAL DATA
8 PINS - PLASTIC DIP
TO220AB(Plastic)
CONTROLLER
Cooling method : C
Marking : Type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torquevalue : 1 m.N.
TRIAC
I
==
A
G
D
B
C
F
P
N
O
M
L
J
H
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.20 10.40 0.401 0.401
B 14.23 15.87 0.560 0.625
C 12.70 14.70 0.500 0.579
D 5.85 6.85 0.230 0.270
F 4.50 0.178
G 2.54 3.00 0.100 0.119
H 4.48 4.82 0.176 0.190
I 3.55 4.00 0.139 0.158
J 1.15 1.39 0.045 0.055
L 0.35 0.65 0.013 0.026
M 2.10 2.70 0.082 0.107
N 4.58 5.58 0.18 0.22
O 0.80 1.20 0.031 0.048
P 0.64 0.96 0.025 0.038
REF. DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
a1 0.7 0.027
B 1.39 1.65 0.054 0.065
B1 0.91 1.04 0.036 0.041
b 0.5 0.020
b1 0.38 0.50 0.015 0.020
D 9.8 0.386
E 8.8 0.346
e 2.54 0.100
e4 7.52 0.300
F 7.1 0.280
I 4.8 0.189
L 3.3 0.130
Z 0.44 1.60 0.017 0.063
AVS10
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without
express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printedin Italy - All rights reserved.
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
Australia- Brazil- France - Germany- Hong Kong - Italy- Japan - Korea - Malaysia - Malta - Morocco- TheNetherlands -
Singapore - Spain - Sweden - Switzerland- Taiwan - Thailand - United Kingdom - U.S.A.
AVS10
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