Datasheet ATTL7583DF, ATTL7583DAJ-D, ATTL7583CF, ATTL7583CAJ-D, ATTL7583BF Datasheet (AGERE)

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Page 1

Data Sheet February 2001

L7583A/B/C/D Line Card Access Switch

Features

■ Small size/surface-mount packaging

■ Monolithic IC reliability

■ Low impulse noise

■ Make-before-break, break-before-make operation

■ Clean, bounce-free switching

■ Low, matched ON-resistance

■ Built-in current limiting, thermal shutdown, and

SLIC protection

■ 5 V only operation, very low power consumption

■ Battery monitor, all OFF state upon loss of battery

■ No EMI

■ Latched logic level inputs, no driver circuitry

■ Only one external protector required

Applications

■ Central office

■ DLC

■ PBX

■ DAML

■ HFC/FITL

The L7583A/B has seven states: the idle talk state (line break switches closed, all other switches open), the power ringing state (ringing access switches closed, all other switches open), loop access state (loop access switches closed, all switches open), SLIC test state (test in switches closed, all other switches open), simultaneous loop and SLIC access state (loop and test in switches closed, all others open), ringing generator test state (ring test switches closed, all others open), and an all OFF state. The seven states in the L7583A/B are also in the L7583C/D, with an additional simultaneous testout and ring-test state, making the L7583C/D appropriate for digital loop carrier and other Bellcore TR-57 applications.

The L7583 offers break-before-make or makebefore-break switching, with simple logic level input control. Because of the solid-state construction, voltage transients generated when switching into an inductive ringing lead during ring cadence or ring trip are minimized, possibly eliminating the need for external zero cross switching circuitry. State control is via logic level inputs, so no additional driver circuitry is required.

The line break switch is a linear switch that has exceptionally low ON-resistance and an excellent ON-resistance matching characteristic. The ringing access switch has a breakdown voltage rating >480 V which is sufficiently high, with proper protection, to prevent breakdown in the presence of a transient fault condition (i.e., passing the transient on to the ringing generator).

Description

The L7583A/B/C/D Line Card Access Switch is a monolithic solid-state device providing the equivalent switching functionality of three 2 form C switches. The L7583 is designed to provide power ringing access, line test access (test out), and SLIC test access (test in) to tip and ring in central office, digital loop carrier, private branch exchange, digitally added main line, and hybrid fiber coax/fiber-in-the-loop analog line card applications. An additional pair of solidstate contacts are also available to provide access for testing of the ringing generator.

Incorporated into the L7583A

xx and L7583Cxx is a diode bridge/SCR clamping circuit, current-limiting circuitry, and a thermal shutdown mechanism to provide protection to the SLIC device and subsequent circuitry during fault conditions. This is shown in Figure 1 as version A. Positive and negative lightning is reduced by the current-limiting circuitry and steered to ground via diodes and the integrated SCR. Power cross is also re duced

by the current-limiting and ther-

mal shutdown circuits.

Page 2

BAT

RBAT

RLINE

GND

LINE

VDD

SW1

LATCH

RINGING

TTESTout

SW2

SW3 SW4

SW5

SW7

SW9

SW8

SW10

SW6

TTESTin

TBAT

TRINGING

TESTin

RTESTout

RTESTin

RING

DGND

TSD

INTESTout

CONTROL

LOGIC

SCR AND TRIP CKT

L7583A/B/C/D Line Card Access Switch

Data Sheet

February 2001

Description (continued)

The L7583B integrated diode bridge along with current limiting and thermal shutdown (see Figure 2 for version B). This will cause positive faults to be directed to ground and negative faults to battery. In either polarity, faults are reduced by the current-limit and/or thermal shutdown mechanisms.

To protect the L7583 from an overvoltage fault condition, use of a secondary protector is required. The secondary protector must limit the voltage seen at the tip/ ring terminals to prevent the breakdown voltage of the switches from being exceeded. To minimize stress on the solid-state contacts, use of a foldback- or crowbartype secondary protector is recommended. With proper choice of secondary protection, a line card using the L7583 will meet all relevant ITU-T, LSSGR, FCC, or

* protection requirements.

xx and L7583Dxx versions provide only an

Pin Information

The L7583 operates off of a 5 V supply only. This gives the device extremely low idle and active power dissipation and allows use with virtually any range of battery voltage. This makes the L7583 especially appropriate for remote power applications such as DAM L or FOC/ FITL or other Bellcore TA 909 applications where power dissipation is particularly critical.

A battery voltage is also used by the L7583, only as a reference for the integrated protection circuit. The L7583 will enter an all OFF state upon loss of battery.

During power ringing, to turn on and maintain the ON state, the ring access switch and ring test switch will draw a nominal 2 mA or 4 mA from the ring generator.

The L7583A/B/C/D device is packaged in a 24-pin, plastic DIP (L7583AF/BF/CF/DF) and in a 28-pin, plastic SOG (L7583AAJ/BAJ/CAJ/DAJ).

* UL is a registered trademark of Underwriters Laboratories, Inc.

SW2

SW6

SW8

27 26

24 23

20 19

BAT

NC NC

RTESTin RBAT

RLINE

RINGINGNC

R RTESTout LATCH

INTESTin

RING

INTESTout

12-2365.d (F)

12-2364.a (F)

Note: Shown with A/C version protection. The 24-pin DIP is avail-

able with either A/C or B/D version protection.

Figure 1. 24-Pin, Plastic DIP (600 mil)

GND

TTESTin

TBAT

LINE

TRINGING

TTESTout

VDD

TSD

DGND

Note: Shown with B/D version protection. The 28-pin SOG is avail-

able with either A/C or B/D version protection.

SW1

5 6

SW3 SW4

SW5

SW7

9 10

SW9

SW10

CONTROL

LOGIC

Figure 2. 28-Pin, Plastic SOG

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Data Sheet February 2001

L7583A/B/C /D Line Card Access Swi t ch

Pin Information (continued)

Table 1. Pin Descriptions

DIP SOG Symbol Description DIP SOG Symbol Description

11F

2 2 NC No connection. 23 27, 26 NC No connection. 3 3, 4 NC No connection. 22 25, 21 NC No connection. 45T 56 T

67T 78T

810T 9 9, 11 NC No connection. 16 18 LATCH Data input control, active-high,

10 12 V 11 13 T

12 14 D

GND Fault ground. 24 28 VBAT Battery voltage. Used as a ref-

erence for protection circuit.

TESTin Test (in) access on TIP . 21 24 RTESTin Test (in) access on RING.

BAT Connect to TIP on SLIC side. 20 23 RBAT Connect to RING on SLIC

side.

LINE Connect to TIP on line side. 19 22 RLINE Connect to RING on line side.

RINGING Connect to return ground for ring-

18 20 RRINGING Connect to ringing generator.

ing generator.

TESTout Test (out) access on TIP. 17 19 RTESTout Test (out) access on RING.

transparent low.

DD 5 V supply. 15 17 INTEST in Logic level switch input control. SD Temperature shutdown pin. Can

14 16 IN

RING Logic level switch input control.

be used as a logic le vel inpu t or an output. See Tables 16 and 17, Truth Tables, and the Switching Behavior section of this data sheet for input pin description. As an output fla g, wi l l r ead 5 V w he n th e device is in its operational mode and 0 V in the thermal shutdown mode. T o disable the thermal shutdown mechanism, tie this pin to 5 V (not recommended).

GND Digital ground. 13 15 INTESTout Logic level switch input control.

Absolute Maximum Ratings

Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.

Table 2. Absolute Maximum Ratings

Parameter Min Max Unit

Operating Temperature Range –40 110 °C Storage Temperature Range –40 150 °C Relative Humidity Range 5 95 % Pin Soldering Temperature (t = 10 s max) — 260 °C 5 V Power Supply — 7 V Battery Supply — –85 V Logic Input Voltage — 7 V Input-to-output Isolation — 330 V Pole-to-pole Isola tion — 330 V

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L7583A/B/C/D Line Card Access Switch

Data Sheet

February 2001

Handling Precautions

Although protection circuitry has been designed into this device, proper precautions should be taken to avoid exposure to electrostatic discharge (ESD) during handling and mounting. Lucent Technologies Microelectronics Group employs a human-body model (HBM) and a charged-device model (CDM) for ESD-susceptibility testing and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used to define the model. No industry-wide standard has been adopted for CDM. However, a standard HBM (resistance = 1500 Ω, capacitance = 100 pF) is widely used and therefore can be used for comparison purposes. The HBM ESD threshold presented here was obtained by using these circuit parameters.

Table 3. HBM ESD Threshold Voltage

Device Rating

L7583 1000 V

Electrical Characteristics

TA = –40 °C to +85 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are

the result of engineering evaluations. Typical values are for information purposes only and are not part of the testing requirements.

Table 4. Power Supply Specifications

Supply Min Typ Max Unit Supply Min Typ Max Unit

DD 4.5 5 5.5 V VBAT* –19 — –72 V

*VBAT is used only as a reference for internal protection circuitry . If VBAT rises above –10 V, the device will enter an all OFF state and remain in

this state until the battery voltage drops below –15 V.

Table 5. Test In Switches, 1 and 2

Parameter Test Condition Measure Min Typ Max Unit

OFF-state Leakage Current:

+25 °C +85 °C –40 °C

ON-resistance:

+25 °C +85 °C –40 °C

Isolation:

+25 °C +85 °C –40 °C

dV/dt Sensitivity*

Vswitch (differential) = –320 V to Gnd

Vswitch (differential) = –60 V to +260 V

Vswitch (differential) = –330 V to Gnd

Vswitch (differential) = –60 V to +270 V

Vswitch (differential) = –310 V to Gnd

Vswitch (differential) = –60 V to +250 V

Iswitch (on) = ±5 mA, ±10 mA Iswitch (on) = ±5 mA, ±10 mA Iswitch (on) = ±5 mA, ±10 mA

Vswitch (both poles) = ±320 V,

Logic inputs = Gnd

Vswitch (both poles) = ±330 V,

Logic inputs = Gnd

Vswitch (both poles) = ±310 V,

Logic inputs = Gnd

———200—V/µs

Iswitch Iswitch Iswitch

∆ ∆ VON ∆ VON

Iswitch Iswitch Iswitch

— — —

45 — 33

— — —

1 1 1

— 70 —

1 1 1

µA µA µA

Ω Ω Ω

µA µA µA

* Applied voltage is 100 Vp-p square wave at 100 Hz.

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Data Sheet February 2001

Electrical Characteristics (continued)

Table 6. Break Switches, 3 and 4

Parameter Test Condition Measure Min Typ Max Unit

OFF-state Leakage

Current:

+25 °C +85 °C –40 °C

ON-resistance:

+25 °C +85 °C –40 °C

ON-resistance Match Per ON-resistance test

ON-state Voltage* Iswitch = I dc Current Limit:

+85 °C –40 °C

Dynamic Current Limit (t = <0.5 µs)

Isolation:

+25 °C +85 °C –40 °C

dV/dt Sensitivity

†

Vswitch (differential) = –320 V to Gnd

Vswitch (differential) = –60 V to +260 V

Vswitch (differential) = –330 V to Gnd

Vswitch (differential) = –60 V to +270 V

Vswitch (differential) = –310 V to Gnd

Vswitch (differential) = –60 V to +250 V

LINE = ±10 mA, ±40 mA, TBAT = –2 V

condition of SW3, SW4

LIMIT @ 50 Hz/60 Hz VON — — 220 V

Vswitch (on) = ±10 V Vswitch (on) = ±10 V

Break switches in ON state; ringing

access switches OFF; apply ±1000 V at

10/1000 µs pulse; appropriate second-

ary protection in place

Vswitch (both poles) = ±320 V,

Logic inputs = Gnd

Vswitch (both poles) = ±330 V,

Logic inputs = Gnd

Vswitch (both poles) = ±310 V,

Logic inputs = Gnd

— — — 200 — V/µs

L7583A/B/C /D Line Card Access Swi t ch

Iswitch Iswitch Iswitch

∆

Magnitude

ON SW3 – RON SW4

Iswitch Iswitch

Iswitch — 2.5 — A

Iswitch Iswitch Iswitch

—

— — —

19.5

14.5

—

— 28 —

—0.21.0

80————

250mAmA

—

µA µA µA

Ω Ω Ω

Ω

µA µA µA

* This parameter is not tested in production. Choice of secondary protector should ensure this rating is not exceeded.

† Applied voltage is 100 Vp-p square wave at 100 Hz.

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L7583A/B/C/D Line Card Access Switch

Electrical Characteristics (continued)

Table 7. Ring Test Return Switch, 5

Parameter Test Condition Measure Min Typ Max Unit

OFF-state Leakage Current:

+25 °C +85 °C –40 °C

ON-resistance Iswitch (on) = ±0 mA, ±10 mA Isolation:

+25 °C +85 °C –40 °C

dV/dt Sensitivity*

Vswitch (differential) = –320 V to Gnd

Vswitch (differential) = –60 V to +260 V

Vswitch (differential) = –330 V to Gnd

Vswitch (differential) = –60 V to +270 V

Vswitch (differential) = –310 V to Gnd

Vswitch (differential) = –60 V to +250 V

Vswitch (both poles) = ±320 V,

Logic inputs = Gnd

Vswitch (both poles) = ±330 V,

Logic inputs = Gnd

Vswitch (both poles) = ±310 V,

Logic inputs = Gnd

———200—V/µs

February 2001

—

Iswitch Iswitch Iswitch

ON —50100

∆

Iswitch Iswitch Iswitch

— — —

— —

— — —

Data Sheet

µA

Ω

µA

* Applied voltage is 100 Vp-p square wave at 100 Hz.

Table 8. Ringing Test Switch, 6

Parameter Test Condition Measure Min Typ Max Unit

OFF-state Leakage Current:

+25 °C

Vswitch (differential) = –60 V to +190 V

Iswitch

—

Vswitch (differential) = +60 V to –190 V

+85 °C

Vswitch (differential) = –60 V to +200 V

Iswitch

—

Vswitch (differential) = +60 V to –200 V

–40 °C

Vswitch (differential) = –60 V to +180 V

Iswitch

—

Vswitch (differential) = +60 V to –180 V

ON-resistance Iswitch (on) = ±70 mA, ±80 mA

ON ——20

∆

ON Vo ltage Iswitch (on) = ±1 mA — — — 1.5 V Steady-state Current* — — — — 100 mA Release Current — — — 500 — µA Isolation:

+25 °C

Vswitch (both poles) = ±320 V,

Iswitch

—

Logic inputs = Gnd

+85 °C

Vswitch (both poles) = ±330 V,

Iswitch

—

Logic inputs = Gnd

–40 °C

Vswitch (both poles) = ±310 V,

Iswitch

—

Logic inputs = Gnd

dV/dt Sensitivity

* Choice of secondary protector and series current-limit resistor should ensure these ratings are not exceeded.

† Applied voltage is 100 Vp-p square wave at 100 Hz.

†

———200—V/µs

µA µA µA

Ω

µA µA µA

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Page 7

Data Sheet February 2001

L7583A/B/C /D Line Card Access Swi t ch

Electrical Characteristics (continued)

Table 9. Ring Return Switch, 7

Parameter Test Condition Measure Min Typ Max Unit

OFF-state Leakage

—

Current:

+25 °C +85 °C –40 °C

Vswitch (differential) = –320 V to Gnd

Vswitch (differential) = –60 V to +260 V

Vswitch (differential) = –330 V to Gnd

Vswitch (differential) = –60 V to +270 V

Vswitch (differential) = –310 V to Gnd

Vswitch (differential) = –60 V to +250 V

Iswitch Iswitch Iswitch

dc Current Limit Vswitch (on) = ±10 V Iswitch — 200 — mA Dynamic Current Limit

(t = <0.5 µs)

Break and loop switches in OFF state; ring return

switch ON; apply ±1000 V at 10/1000 µs pulse;

Iswitch — 2.5 — A

appropriate secondary protection in place ON-resistance Iswitch (on) = ±0 mA, ±10 mA ON-state Voltage* Iswitch = I

LIMIT @ 50 Hz/60 Hz VON ——130V

∆

Isolation:

+25 °C +85 °C –40 °C

dV/dt Sensitivity

†

Vswitch (both poles) = ±320 V, Logic inputs = Gnd Vswitch (both poles) = ±330 V, Logic inputs = Gnd Vswitch (both poles) = ±310 V, Logic inputs = Gnd

———200—V/µs

Iswitch Iswitch Iswitch

—

ON ——100

—

µA µA µA

Ω

µA µA µA

* This parameter is not tested in production. Choice of secondary protector should ensure this rating is not exceeded.

† Applied voltage is 100 Vp-p square wave at 100 Hz.

Table 10. Ringing Access Switch, 8

Parameter Test Condition Measure Min Typ Max Unit

OFF-state Leakage

Current:

+25 °C

Vswitch (differential) = –255 V to +210 V

Iswitch

—

Vswitch (differential) = +255 V to –210 V

+85 °C

Vswitch (differential) = –270 V to +210 V

Iswitch

—

Vswitch (differential) = +270 V to –210 V

–40 °C

Vswitch (differential) = –245 V to +210 V

Iswitch

—

Vswitch (differential) = +245 V to –210 V ON Voltage Iswitch (on) = ±1 mA — — — 3 V Ring Generator Cur-

rent During Ring

Steady-state Current Surge Current

†

CC = 5 V

RING = 1

TESTin = 0

TESTout = 0

†

— — — — 150 mA ————2A

RING-

SOURCE

—*—mA

Release Current — — — 500 — µA ON-resistance Iswitch (on) = ±70 mA, ±80 mA ∆ V

ON ——12Ω

Isolation:

+25 °C +85 °C –40 °C

dV/dt Sensitivity

‡

Vswitch (both poles) = ±320 V, Logic inputs = Gnd Vswitch (both poles) = ±330 V, Logic inputs = Gnd Vswitch (both poles) = ±310 V, Logic inputs = Gnd

— — — 200 — V/µs

Iswitch Iswitch Iswitch

— — —

1 1 1

µA µA µA

* At the time of publication of this data sheet, the current device design will be a nominal 4 mA. Devices are being redesigned to reduce this

current to less than 2 mA nominally. Consult your Lucent Technologies Microelectronics Group account executive for additional details. † Choice of secondary protector and series current-limit resistor should ensure these ratings are not exceeded. ‡ Applied voltage is 100 Vp-p square wave at 100 Hz.

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L7583A/B/C/D Line Card Access Switch

Electrical Characteristics (continued)

Table 11. Loop Access Switches, 9 and 10

Parameter Test Condition Measure Min Typ Max Unit

OFF-state Leakage

Current:

+25 °C +85 °C –40 °C

ON-resistance:

+25 °C +85 °C

–40 °C ON-state Voltage* Iswitch = I dc Current Limit:

+85 °C

–40 °C Dynamic Current Limit

(t = <0.5 µs)

Isolation:

+25 °C

+85 °C

–40 °C dV/dt Sensitivity

†

Vswitch (differential) = –320 V to Gnd

Vswitch (differential) = –60 V to +260 V

Vswitch (differential) = –330 V to Gnd

Vswitch (differential) = –60 V to +270 V

Vswitch (differential) = –310 V to Gnd

Vswitch (differential) = –60 V to +250 V

Iswitch (on) = ±5 mA, ±10 mA Iswitch (on) = ±5 mA, ±10 mA Iswitch (on) = ±5 mA, ±10 mA

LIMIT @ 50 Hz/60 Hz VON ——130 V

Vswitch (on) = ±10 V Vswitch (on) = ±10 V

Break switches in ON state; ringing access

switches OFF; apply ±1000 V at 10/1000 µs pulse;

appropriate secondary protection in place

Vswitch (both poles) = ±320 V, Logic inputs = Gnd Vswitch (both poles) = ±330 V, Logic inputs = Gnd Vswitch (both poles) = ±310 V, Logic inputs = Gnd

Data Sheet

February 2001

µA

—

Iswitch Iswitch Iswitch

Von

∆

Von

∆

Von

∆

Iswitch Iswitch80————250mAmA

Iswitch — 2.5 — A

Iswitch Iswitch Iswitch

— — — 200 — V/µs

— — —

— —

45 — 33

— — —

1 1

— 70 —

1 1 1

µA µA

Ω Ω Ω

µA µA µA

* This parameter is not tested in production. Choice of secondary protector should ensure this rating is not exceeded.

† Applied voltage is 100 Vp-p square wave at 100 Hz.

8 Lucent Technologies Inc.

Page 9

Data Sheet February 2001

L7583A/B/C /D Line Card Access Swi t ch

Electrical Characteristics (continued)

Table 12. Additional Electrical Characteristics

Parameter Test Condition Measure Min Typ Max Unit

Digital Input Characteristics:

Input Low Voltage ————1.5V

Input High Voltage — — 3.5 — — V Input Leakage Current (high) V

Input Leakage Current (low) V

Power Requirements:

Power Dissipation V

DD Current VDD = 5 V,

BAT Current VBAT = –48 V,

Digital Input Characteristics:

Input Low Voltage — — — — 1.5 V Input High Voltage — — 3.5 — — V Input Leakage Current (high) V

Input Leakage Current (low) V

Temperature Shutdown Requirements*:

Shutdown Activation Temperature — — 110 125 150 °C Shutdown Circuit Hysteresis — — 10 — 25 °C

DD = 5.5 V, VBAT = –75 V,

Vlogicin = 5 V

DD = 5.5 V, VBAT = –75 V,

Vlogicin = 0 V

DD = 5 V, VBAT = –48 V,

idle/talk state or all OFF state,

ringing state or access state

idle/talk state or all OFF state,

ringing state or access state

idle/talk state or all OFF state,

ringing state or access state

DD = 5.5 V, VBAT = –58 V,

Vlogicin = 5 V

DD = 5.5 V, VBAT = –58 V,

Vlogicin = 0 V

llogicin — — 1 µA

DD, IBAT

IDD

I IDD

BAT

I IBAT

— —

3 6

——560

0.750

— —

4 4

510mW

900

1.9

1010µA

µA

llogicin — — 1 µA

* Temperature shutdown flag (TSD) will be high during normal operation and low during temperature shutdown state.

Zero Cross Current Turn Off

The ring access switch (SW8) is designed to turn off on the next zero current crossing after application of the appropriate logic input control. This switch requires a current zero cross to turn off. Switch 8, once on, will remain in the ON state (regardless of logic input) until a current zero cross. Therefore, to ensure proper operation of switch 8, this switch should be connected, via proper impedance, to the ringing generator or some other ac source. Do not attempt to switch pure dc with switch 8. The ringing test access switch, SW6, also has similar characteristics to switch 8 and should also only be used to switch signals with zero current crossings. For a detailed explanation of the operation of switches 6 and 8, please refer to the

Switches

Application Note.

Lucent Technologies Inc. 9

An Introduction to L758X Series of Line Card Access

Page 10

L7583A/B/C/D Line Card Access Switch

Data Sheet

February 2001

Switching Behavior

When switching from the power ringing state to the idle/talk state, via simple logic level input control, the L7583 is able to provide control with respect to the timing when the ringing access contacts are released relative to the state of the line break contacts.

Make-before-break operation occurs when the line break switch contacts are closed (or made) before the ringing access switch contact is opened (or broken). Break-before-make operation occurs when the ringing access contact is opened before the line break switch contacts are closed.

Using the logic level input pins RING, TESTin, and TESTout, either make-before-break or break-beforemake operation of the L7583 is easily achie ved. The logic sequences for either mode of operation are given in Table 13 and Table 14. See the Truth Tables (Table 16 and Table 17) for an explanation of logic states.

When using an L758X in the make-before-break mode, during the ring-to-idle transition, for a period of up to one-half the ringing frequency, the ring break switch and the pnpn-type ring access switch can both be in the ON state. This is the maximum time after the logic signal at IN

RING has transitioned that the ring access

switch is waiting for the next zero current cross, so it can close. During this interval, current that is limited to the dc break switch current-limit value will be source from the ring node of the SLIC.

This current is presented to the internal protection circuit. If the SCR-type protector is used (A or C codes), if by random probability the ring-to-idle transition occurs during a portion of the ring cycle when the ringing voltage exceeds the protection circuit SCR turn-on volt-

age, and if current in excess of the SCR’s turn-on current is also available, the SCR may turn on. Once the SCR is triggered on, if the SLIC is capable of supplying current in excess of the holding current, the SCR may be latched on by the SLIC.

The probability of this event depends on the characteristics of the given SLIC and of the holding current of the L7583 A or C device. The SCR hold current distribution is designed to be safely away from the test limit of 80 mA. The higher the distribution, the lower the probability of the latch.

If this situation is of concern for a given board design, either use the A or C series device in the break-beforemake mode (eliminates the original 25 ms current pulse) or use a B or D series device (eliminates the SCR).

Table 13. Make-Before-Break Operation

RING TESTin TESTout T

5 V 0 V 0 V Float Power

0 V 0 V 0 V Float Make-

0 V 0 V 0 V Float Idle/Talk Zero cross current

SD State Timing

— Open Closed Closed Open

Ringing

SW8 waiting for next beforebreak

zero current crossing

to turn off maximum

time—one-half of

ringing. In this transi-

tion state, current

that is limited to the

dc break switch cur-

rent-limit v alue will be

sourced f rom the r ing

node of the SLIC.

has occurred.

Break

Switches

3 & 4

Closed Open Closed Open

Closed Open Open Open

Ring

Return

Switch 7

Ring

Access

Switch 8

All Other

Access

Switches

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Page 11

Data Sheet February 2001

Switching Behavior (continued)

Table 14. Break-Before-Make Operation

L7583A/B/C /D Line Card Access Swi t ch

INPUT TESTin TESTout TSD State Timing

5 V 0 V 0 V Float Power

— Open Closed Closed Open

Break

Switches

3 & 4

Ring Return Switch

Ring

Access

Switch

Ringing

5 V 0 V 5 V Float All Off Hold this state for

Open Open Closed Open

≤25 ms. SW8 waiting

for zero current to turn off.

5 V 0 V 5 V Float All Off Zero cur r e nt has

Open Open Open Open occurred and SW8 has opened.

0 V 0 V 0 V Float Idle/T alk Release break

Closed Open Open Open

switches.

Notes: Break-before-make operation can be achieved using T

force the all OFF state, force T this 25 ms all OFF state, toggle the inputs from 10 (ringing state) to 00 (idle/talk state). After 25 ms, release T input pins which will set the idle talk state.

When using the L7583A/B/C/D in this mode, forcing T 5 V will allow switch control via the logic INPUT pins. However, setting T recommended. Therefore, to allow switch control via the logic INPUT pins, allow T

Thus, when using T switch control via logic input pins and thermal shutdown mechanism is active). This may require use of an open-collector buffer.

Also note that T down mechanism.

SD as an input, the two recommended states are 0 (overrides logic input pins and forces all OFF state) and float (allows

SD operation in L7583 is different than TSD operation of the L7581, where application of 5 V does not disable the thermal shut-

SD to ground. This will override the logic inputs and also force the all OFF state. Hold this state for 25 ms. During

SD as an input. In lines two and three of Table 14, instead of using the logic input pins to

SD to return switch control to the

SD to ground will override the INPUT pins and force an all OFF state. Setting TSD to

SD to 5 V will also disable the thermal shutdown mechanism. This is not

SD to float.

All Other

Switches

Power Supplies

Both the 5 V and battery supply are brought onto the L7583. The L7583 requires only the 5 V supply for switch operation; that is, state control is powered exclusively off of the 5 V supply. Because of this, the L7583 offers extremely low power dissipation, both in the idle and active states.

The battery voltage is not used for switch state control. The battery is used as a reference vol tage by the integrated secondary protection circuit. When the voltage

BAT or RBAT drops 2 V to 4 V below the battery, the

at T integrated SCR will trigger, thus preventing faultinduced overvoltage situations at the T

BAT/RBAT nodes.

Loss of Battery Voltage

As an additional protection feature, the L7583 monitors the battery voltage. Upon loss of battery voltage, the L7583 will automatically enter an all OFF state and remain in that state until the battery voltage is restored.

The L7583 is designed such that the device will enter

the all OFF state if the battery rises above –10 V and will remain off until the battery drops below –15 V.

Monitoring the battery for the automatic shutdown feature will draw a small current from the battery, typically 4 µA. This will add slightly to the overall power dissipation of the device.

Impulse Noise

Using the L7583 will minimize and possibly eliminate the contribution to the overall system impulse noise that is associated with ringing access switches. Because of this characteristic of the L7583, it may not be necessary to incorporate a zero cross switching scheme. This ultimately depends upon the characteristics of the individual system and is best evaluated at the board level.

Lucent Technologies Inc. 11

Page 12

L7583A/B/C/D Line Card Access Switch

Data Sheet

February 2001

Protection

Integrated SLIC Protection

Diode Bridge/SCR

In the L7583A tion to the SLIC device or other subsequent circuitry is provided by a combination of current-limited break switches, a diode bridge/SCR clamping circuit, and a thermal shutdown mechanism. In the L7583B the L7583D or other subsequent circuitry is provided by a combination of current-limited break switches, a diode bridge, and a thermal shutdown mechanism.

In both protection versions, during a positive lightning event, fault current is directed to ground via steering diodes in the diode bridge. Voltage is clamped to a diode drop above ground. In the A version, negative lightning causes the SCR to conduct when the voltage goes 2 V to 4 V more negative than the battery. Fault currents are then directed to ground via the SCR and steering diodes in the diode bridge.

Note that for the SCR to foldback or crowbar, the ON voltage (see Table 14) of the SCR must be less negative than the battery reference voltage. If the battery voltage is less negative than the SCR ON voltage, the SCR will conduct fault currents to ground; however, it will not crowbar.

In the B/D version, negative lightning is directed to battery via steering diodes in the diode bridge.

For power cross and power induction faults, in both protection versions, the positive cycle of the fault is clamped a diode drop above ground and fault currents steered to ground. In the A/C version, the negative cycle will cause the SCR to trigger when the voltage exceeds the battery reference voltage by 2 V to 4 V. When the SCR triggers, fault current is steered to ground. In the B/D version, the negative cycle of the power cross is steered to battery.

Current Limiting

During a lightning event, the current that is passed through the break switches and presented to the integrated protection circuit and subsequent circuitry is limited by the dynamic current-limit response of the break switches (assuming idle/talk state). When the voltage seen at the T an external secondary protector, upon application of a 1000 V , 10 x 1000 pulse (LSSGR lightning), the current seen at the T

magnitude 2.5 A and duration less than 0.5 µs.

xx and the L7583Cxx versions, protec-

xx and

xx versions, protection to the SLIC device

LINE/RLINE nodes is properly clamp ed by

BAT/RBAT nodes will typically be a pulse of

During a power cross event, the current that is passed through the break switches and presented to the integrated protection circuit and subsequent circuitry is limited by the dc current-limit response of the break switches (assuming idle/talk state). The dc current limit is specified over temperature between 100 mA and 250 mA. Note that the current-limit circuitry has a negative temperature coefficient. Thus, if the device is subjected to an extended power cross, the value of current seen at T

BAT/RBAT will decrease as the device heats

due to the fault current. If sufficient heating occurs, the temperature shutdown mechanism will activate and the device will enter an all off mode.

Temperature Shutdown Mechanism

When the device temperature reaches a minimum of 110 °C, the thermal shutdown mechanism will activate and force the device into an all OFF state, regardless of the logic input pins. Pin T

SD, when used as an out-

put, will read 0 V when the device is in the thermal shutdown mode and +V

DD during normal operation.

During a lightning event, due to the relatively short duration, the thermal shutdown will not typically activate.

During an extended power cross, the device temperature will rise and cause the device to enter the thermal shutdown mode. This forces an all off mode, and the current seen at T

BAT/RBAT drops to zero. Once in the

thermal shutdown mode, the device will cool and exit the thermal shutdown mode, thus reentering the state it was in prior to thermal shutdown. Current, limited to the dc current-limit value, will again begin to flow and device heating will begin again. This cycle of entering and exiting thermal shutdown will last as long as the power cross fault is present. The frequency of entering and exiting thermal shutdown will depend on the magnitude of the power cross. If the magnitude of the power cross is great enough, the external secondary protector may trigger shunting all current to ground.

In the L7583, the thermal shutdown mechanism can be disabled by forcing the T

SD pin to +VDD. This functional-

ity is different from the L7581, whose thermal shutdown mechanism cannot be disabled.

Electrical specifications relating to the integrated overvoltage clamping circuit are outlined in Table 15.

1212 Lucent Technologies Inc.

Page 13

Data Sheet February 2001

L7583A/B/C /D Line Card Access Swi t ch

Protection (continued)

Integrated SLIC Protection (continued)

External Seconda ry Pr ot e ct or

With the above integrated protection features, only one overvoltage secondary protection device on the loop side of the L7583 is required. The purpose of this device is to limit fault voltages seen by the L7583 so as not to exceed the breakdown voltage or input-output isolation rating of the device. To minimize stress on the L7583, use of a foldback- or crowbar-type device is recommended. A detailed explanation and design equations on the choice of the external secondary protection device are given in the

of Line Card Access Switches

design equations governing the choice of external secondary protector are given below.

■ |VBATmax| + |Vbreakovermax| < |Vbreakdownmin(break)|

■ |Vringingpeakmax| + |VBATmax| + |Vbreakovermax| <

|Vbreakdownmin(ring)|

■ |Vringingpeakmax| + |VBATmax| < |Vbreakovermin|

An Introduction to L758X Series

Application Note. Basic

where:

BATmax—Maximum magnitude of battery voltage.

breakovermax—Maximum magnitude breakover voltage

V of external secondary protector.

breakovermin—Minimum magnitude breakover voltage

V of external secondary protector.

breakdownmin(break)—Minimum magnitude breakdown

V voltage of L7583 break switch.

breakdownmin(ring)—Minimum magnit ude breakdo wn

V voltage of L7583 ring access switch.

ringingpeakmax—Maximum magnitude peak voltage of

V ringing signal.

Series current-limiting fused resistors or PTCs should be chosen so as not to exceed the current rating of the external secondary protector. Refer to the manufacturer’s data sheet for requirements.

Table 15. Electrical Specifications, Protection Circuitry

Parameters Related to Diodes (in Diode Bridge)

Parameter Test Condition Measure Min Typ Max Unit

Voltage Drop @ Continuous Cur-

rent (50 Hz/60 Hz)

Voltage Drop @ Surge

Current

Apply ±dc curr ent limit

of break switches

Apply ±dynamic cur-

rent limit of break

Forward

Voltage

Forward

Voltage

—— 3 V

—5 — V

switches

Parameters Related to Protection SCR

Surge Current — — — —

Gate Trigger Current*

Gate Trigger Current

†

Tempera-

———2550mA — — — –0.5 — %/°C

‡

ture Coefficient

Hold Current — — 70 — — mA Gate Trigger Voltage Trigger current — V Reverse Leakage Current V ON-State Voltage

0.5 A, t = 0.5 µs

2.0 A, t = 0.5 µs

* Previous versions of this data sheet specified a Trigger Current of 50 mA minimum. Trigger Current is defined as the minimum current drawn

from tip and ring to turn on the SCR. The specification in this data sheet is Gate Trigger Current, which is defined as the maximum current that can flow into the battery before the SCR turns on.

† Typical at 25 °C. ‡ Twice ± dynamic current limit of break switches.

§ In some instances, the typical ON-state voltage can range as low as –25 V.

BAT ———1.0µA

VON

—

BAT – 4 — VBAT – 2 V

— —

–3 –5

— —

V V

Lucent Technologies Inc. 13

Page 14

VBAT

<1 µA

3 V

dc CURRENT-LIMIT

BREAK SWITCHES

BAT – 2

50 mA

dc CURRENT LIMIT (OF BREAK SWITCHES)

BAT – 4

VBAT

<1 µA

3 V

dc CURRENT-LIMIT

BREAK SWITCHES

dc CURRENT LIMIT (OF BREAK SWITCHES)

BAT – 3

L7583A/B/C/D Line Card Access Switch

Typical Performance Characteristics

ILIMIT

Data Sheet

February 2001

CURRENT

LIMITING

2/3 RON

Figure 3. Protection Circuit A/C Version

12-2309.f (F)

–V

2/3 RON

CURRENT

–V

–1.5 V

RON

LIMITING

1.5 V

ILIMIT

–I

Figure 5. Switches 1—5, 7, 9, 10

RON

–VOS

RON

12-2311 (F)

–I

12-2312 (F)

Figure 6. Switches 6, 8

Figure 4. Protection Circuit B/D Version

1414 Lucent Technologies Inc.

12-2309.b (F)

Page 15

Data Sheet February 2001

Application

L7583A/B/C /D Line Card Access Swi t ch

RINGING

TEST RETURN

SW5

VBAT (REFERENCE)

TIP

RING

CROWBAR

PROTECTION

SW9 TEST OUT RINGING

SW10 TEST OUT

RETURN

SW3 BREAK

BREAK SW4

SW8 RINGING ACCESS

RINGING TEST

RING GENERATOR

BATTERY

SW6

SW1SW7 TEST IN

SW2 TEST IN

SCR AND

TRIP

CKT

TIP

BATTERY

FEED

RING

12-2366.d (F)

Figure 7. Typical LCAS Application, Idle, or Talk State Shown (A/C-Type Internal Protection Shown)

Lucent Technologies Inc. 15

Page 16

L7583A/B/C/D Line Card Access Switch

February 2001

Application (continued)

Table 16. Truth Table for L7583A/B

RING INTESTin INTESTout TSD TESTin

Switches

0 V

1 1 1 1 1 1 1 1

0 V 0 V 0 V 5 V/Float 0 V 0 V 5 V 5 V/Float 0 V 5 V 0 V 5 V/Float 5 V 0 V 0 V 5 V/Float 5 V 5 V 0 V 5 V/Float 0 V 5 V 5 V 5 V/Float 5 V 0 V 5 V 5 V/Float 5 V 5 V 5 V 5 V/Float

Don’t

Care

1. If TSD = 5 V, the thermal shutdown mechanism is disabled. If TSD is floating, the thermal shutdown mechanism is active.

2. Forcing T

3. Idle/Talk state.

4. TESTout state.

5. TESTin state

6. Power ringing state.

7. Ringing generator test state.

8. Simultaneous TESTout and TESTin state.

9. All OFF state.

Don’t

Care

SD to ground overrides the logic input pins and forces an all OFF state.

Don’t

Care

Off On Off Off Off Off Off Off Off On On Off Off Off Off Off Off Off On Off Off Off On Off Off On Off Off Off On Off Off Off Off Off Off Off Off Off Off Off Off Off Off Off

Break

Switches

Ring Test Switches

Ring

Switches

Data Sheet

TESTout

Switches

3 4 5 6 7 8 9 9 9

A parallel in/parallel out data latch is integrated into the L7583A/B. Operation of the data latch is controlled by the logic level input pin LA TCH. The data input to the latch is the INPUT pin of the L7583A/B, and the output of the data latch is an internal node used for state control.

When the LATCH control pin is at logic 0, the data latch is transparent and data control signals flow directly from INPUT, through the data latch to state control. Any changes in INPUT will be reflected in the state of the switches.

When the LATCH control pin is at logic 1, the data latch is active—the L7583A/B will no longer react to changes at the INPUT control pin. The state of the switches is now latched; that is, the state of the switches will remain as they were when the LATCH input transitioned from logic 0 to logic 1. The switches will not respond to changes in INPUT as long as LATCH is held high.

Note that the T

SD input is not tied to the data latch. TSD is not affected by the LATCH input. TSD input will override

state control via INPUT and LATCH.

16 Lucent Technologies Inc.

Page 17

Data Sheet February 2001

L7583A/B/C /D Line Card Access Swi t ch

Application (continued)

Table 17. Truth Table for L7583C/D

RING INTESTin INTESTout TSD TESTin

Switches

0 V

1 1 1 1 1 1 1 1

0 V 0 V 0 V 5 V/Float 0 V 0 V 5 V 5 V/Float 0 V 5 V 0 V 5 V/Float 5 V 0 V 0 V 5 V/Float 5 V 5 V 0 V 5 V/Float 0 V 5 V 5 V 5 V/Float 5 V 0 V 5 V 5 V/Float 5 V 5 V 5 V 5 V/Float

Don’t

Care

1. If TSD = 5 V, the thermal shutdown mechanism is disabled. If TSD is floating, the thermal shutdown mechanism is active.

2. Forcing T

3. Idle/Talk state.

4. TESTout state.

5. TEST in state.

6. Power ringing state.

7. Ringing generator test state.

8. Simultaneous TESTout and TESTin state.

9. All OFF state.

10. S imultaneous TESTout—Ring Test state.

Don’t

Care

SD to ground overrides the logic input pins and forces an all OFF state.

Don’t

Care

Off On Off Off Off Off Off On On Off Off Off Off Off Off Off On Off Off Off On Off Off On Off Off Off On Off Off Off Off Off Off Off On Off On

Off Off Off Off Off

Break

Switches

Ring Test

Switches

Ring

Switches

Off

TESTout

Switches

Off

4 5 6 7 8 9

A parallel in/parallel out data latch is integrated into the L7583C/D. Operation of the data latch is controlled by the logic level input pin LATCH. The data input to the latch is the INPUT pin of the L7583C/D and the output of the data latch is an internal node used for state control.

When the LATCH control pin is at logic 1, the data latch is active; the L7583C/D will no longer react to changes at the INPUT control pin. The state of the switches is now latched; that is, the state of the switches will remain as they were when the LATCH input transitioned from logic 0 to logic 1. The switches will not respond to changes in INPUT as long as LATCH is held high.

Note that the T

SD input is not tied to the data latch. TSD is not affected by the LATCH input. TSD input will override

state control via INPUT and LATCH.

Lucent Technologies Inc. 17

Page 18

L7583A/B/C/D Line Card Access Switch

Data Sheet

February 2001

Outline Diagrams

24-Pin, Plastic DIP (600 mil)

Note: The dimensions in this outline diagram are intended for informational purposes only. For detailed schematics

to assist your design efforts, please contact your Lucent Technologies Sales Representative.

PIN #1 IDENTIFIER ZONE

2.54 TYP

Number

of Pins

(N)

Maximum

Length

(L)

0.58 MAX

SEATING PLANE

0.38 MIN

Maximum Width

Without Leads

(B)

Maximum Width Including Leads

(W)

Maximum Height

Above Board

(H)

24 32.26 13.97 15.49 5.49

5-4410 (F)

18 Lucent Technologies Inc.

Page 19

Data Sheet February 2001

L7583A/B/C /D Line Card Access Swi t ch

Outline Diagrams (continued)

28-Pin, Plastic SOG

Note: The dimensions in this outline diagram are intended for informational purposes only. For detailed schemat-

ics to assist your design efforts, please contact your Lucent Technologies Sales Representative.

PIN #1 IDENTIFIER ZONE

1.27 TYP

Number

of Pins

Maximum Length

(N)

(L)

0.51 MAX

SEATING PLANE

0.28 MAX

Maximum Width

Without Leads

(B)

0.10

0.61

Maximum Width Including Leads

(W)

Maximum Height

28 18.11 7.62 10.64 2.67

Above Board

(H)

5-4414 (F)

Lucent Technologies Inc. 19

Page 20

L7583A/B/C/D Line Card Access Switch

Data Sheet

February 2001

Ordering Information

Device Part No. Description Package Comcode

ATTL7583AAJ -D Line Card Access Switch 28-Pin SOG (Dry-bagged) 107338626 ATTL7583AAJ-DT* Line Card Access Switch 28-Pin SOG (Tape & Reel, Dry-bagged) 107338659 ATTL7583AF Line Card Access Switch 24-Pin DIP 107338592 ATTL7583BAJ-D Line Card Access Switch 28-Pin SOG (Dry-bagged) 107394355 ATTL7583BAJ-DT* Line Card Access Switch 28-Pin SOG (Tape & Reel, Dry-bagged) 107411563 ATTL7583BF Line Card Access Switch 24-Pin DIP 107394306 ATTL7583CAJ-D Line Card Access Switch 28-Pin SOG (Dry-bagged) 107602229 ATTL7583CAJ-DT* Line Card Access Switch 28-Pin SOG (Tape & Reel, Dry-bagged) 107602245 ATTL7583CF Line Card Access Switch 24-Pin DIP 107602278 ATTL7583DAJ-D Line Card Access Switch 28-Pin SOG (Dry-bagged) 107602328 ATTL7583DAJ-DT* Line Card Access Switch 28-Pin SOG (Tape & Reel, Dry-bagged) 107602344 ATTL7583DF Line Card Access Switch 24-Pin DIP 107602377

*Devices on tape and reel must be ordered in 1000-piece increments.

For additional information, contact your Microelectronics Group Account Manager or the following: INTERNET: http://www.lucent.com/micro E-MAIL: docmaster@micro.lucent.com N. AMERICA:Microelectronics Group, Lucent Technologies Inc., 555 Union Boulevard, Room 30L-15P-BA, Allentown, PA 18109-3286

ASIA PACIFIC:Microelectronics Group, Lucent Technologies Singapore Pte. Ltd., 77 Science Park Drive, #03-18 Cintech III, Singapore 118256 CHINA: Microelectronics Group, Lucent Technologies (China) Co., Ltd., A-F2, 23/F, Zao Fong Universe Building, 1800 Zhong Shan Xi Road, Shanghai JAPAN: Microelectronics Group, Lucent Technologies Japan Ltd., 7-18, Higashi-Gotanda 2-chome, Shinagawa-ku, Tokyo 141, Japan EUROPE: Data Requests: MICROELECTRONICS GROUP DATALINE: Tel. (44) 7000 582 368, FAX (44) 1189 328 148

Lucent Technologies Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application. No rights under any patent accompany the sale of any such product(s) or information.

February 2001 DS01-111ALC (Replaces DS00-052ALC)

1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610-712-4106) Tel. (65) 778 8833, FAX (65) 777 7495 200233 P. R. China Tel. (86) 21 6440 0468, ext. 325, FAX (86) 21 6440 0652 Tel. (81) 3 5421 1600, FAX (81) 3 5421 1700

Technical Inquiries:GERMANY: (49) 89 95086 0 (Munich), UNITED KINGDOM: (44) 1344 865 900 (Ascot),

FRANCE: (33) 1 40 83 68 00 (Paris), SWEDEN: (46) 8 594 607 00 (Stockholm), FINLAND: (358) 9 3507670 (Helsinki), ITALY: (39) 02 6608131 (Milan), SPAIN: (34) 1 807 1441 (Madrid)

Datasheet ATTL7583DF, ATTL7583DAJ-D, ATTL7583CF, ATTL7583CAJ-D, ATTL7583BF Datasheet (AGERE)

Specifications and Main Features

Frequently Asked Questions

User Manual

Features

Applications

Description

Pin Information

Figure 1. 24-Pin, Plastic DIP (600 mil)

Figure 2. 28-Pin, Plastic SOG

Table 1. Pin Descriptions

Absolute Maximum Ratings

Table 2. Absolute Maximum Ratings

Handling Precautions

Table 3. HBM ESD Threshold Voltage

Electrical Characteristics

Table 4. Power Supply Specifications

Table 5. Test In Switches, 1 and 2

Table 6. Break Switches, 3 and 4

Table 7. Ring Test Return Switch, 5

Table 8. Ringing Test Switch, 6

Table 9. Ring Return Switch, 7

Table 10. Ringing Access Switch, 8

Table 11. Loop Access Switches, 9 and 10

Table 12. Additional Electrical Characteristics

Zero Cross Current Turn Off

Switching Behavior

Table 13. Make-Before-Break Operation

Table 14. Break-Before-Make Operation

Power Supplies

Loss of Battery Voltage

Impulse Noise

Protection

Integrated SLIC Protection

Diode Bridge/SCR

Current Limiting

Temperature Shutdown Mechanism

External Seconda ry Pr ot e ct or

Table 15. Electrical Specifications, Protection Circuitry

Typical Performance Characteristics

Figure 3. Protection Circuit A/C Version

Figure 5. Switches 1—5, 7, 9, 10

Figure 6. Switches 6, 8

Figure 4. Protection Circuit B/D Version

Application

Figure 7. Typical LCAS Application, Idle, or Talk State Shown (A/C-Type Internal Protection Shown)

Table 16. Truth Table for L7583A/B

Table 17. Truth Table for L7583C/D

Outline Diagrams

24-Pin, Plastic DIP (600 mil)

28-Pin, Plastic SOG

Ordering Information