SLIC protection
5 V only operation, very low power consumption
■
Battery monitor, all OFF state upon loss of battery
■
No EMI
■
Latched logic level inputs, no drive circuitry
■
Only one external protector required
■
Applications
Central office
■
DLC
■
PBX
■
DAML
■
HFC/FITL
■
Description
The L7581 Ringing Access Switch is a monolithic
solid-state device that provides the switching functionality of a 2 form C switch.
The L7581 is designed to provide power ringing
access to tip and ring in central office, digital loop
carrier, private branch exchange, digitally added
main line, and hybrid fiber coax/fiber-in-the-loop analog line card applications. The L7581 has three
states: the idle talk state (line break switches closed,
ringing access switches open), the power ringing
state (line break switches open, ringing access
switches closed), and an all OFF state.
The L7581 offers break-before-make or make-beforebreak switching, with simple logic level input control.
Because of the solid-state construction, voltage transients generated when switching into an inductive
ringing load during ring cadence or ring trip are minimized, possibly eliminating the need for external zero
cross switching circuitry. State control is via logic
level inputs, so no additional driver circuitry is
required.
The line break switch is a linear switch that has
exceptionally low ON-resistance and an excellent
ON-resistance matching characteristic. The ringing
access switch has a breakdown voltage rating
>480 V which is sufficiently high, with proper protection, to prevent breakdown in the presence of a transient fault condition (i.e., passing the transient on to
the ringing generator).
Incorporated into the L7581A
xx is a diode bridge/
SCR clamping circuit, current-limiting circuitry, and a
thermal shutdown mechanism to provide protection
to the SLIC device and subsequent circuitry during
fault conditions (see Figure 1). Positive and negative
lightning is reduced by the current-limiting circuitry
and steered to ground via diodes and the integrated
SCR. Power cross is also reduced by the currentlimiting and thermal shutdown circuits.
The L7581B
xx version provides only an integrated
diode bridge along with current limiting and thermal
shutdown, as shown in Figure 2. This will cause positive faults to be directed to ground and negative
faults to battery. In either polarity, faults are reduced
by the current-limit and/or thermal shutdown mechanisms.
Page 2
L7581 Ringing Access Switch
Data Sheet
November 1999
Description
(continued)
To protect the L7581 from an overvoltage fault condition, use of a secondary protector is required. The secondary protector must limit the voltage seen at the tip/
ring terminals to prevent the breakdown voltage of the
switches from being exceeded. To minimize stress on
the solid- state contacts, use of a foldback- or crowbartype secondary protector is recommended. With proper
choice of secondary protection, a line card using the
L7581 will meet all relevant ITU-T, LSSGR, FCC, or
protection requirements.
UL*
The L7581 operates off of a 5 V supply only. This gives
the device extremely low idle and active power dissipation and allows use with virtually any range of battery
voltage. This makes the L7581 especially appropriate
for remote power applications such as DAML or FOC/
FITL or other Bellcore TA 909 applications where
power dissipation is particularly critical.
A battery voltage is also used by the L7581, only as a
reference for the integrated protection circuit. The
L7581 will enter an all OFF state upon loss of battery.
During power ringing, to turn on and maintain the ON
state, the ring access switch will draw a nominal 2 mA
or 4 mA from the ring generator.
Pin Information
GND
1
F
2
NC
BAT
3
T
LINE
T
RINGING
T
DD
V
NC
SD
T
Note: Shown with A version protection. The 16-pin DIP is available
with either A or B version protection.
SW1
4
5
6
7
8
SCR
AND
TRIP
CKT
SW2
TEMPERATURE
SHUTDOWN
SW4SW3
Figure 1. 16-Pin, Plastic DIP
16
15
14
13
12
11
10
9
BAT
V
NC
BAT
R
LINE
R
RINGING
R
LATCH
INPUT
GND
D
12-2306.a (C)
The L7581 device is packaged in a 16-pin, plastic DIP
package (L7581AC/BC) and a 16-pin, plastic SOG
package (L7581AAE/BAE). These devices are pin
compatible with the L7541 device.
* UL is a registered trademark of Underwriters Laboratories, Inc.
GND
1
F
BAT
2
T
LINE
T
NC
NC
RINGING
T
DD
V
SD
T
Note: Shown with B version protection. The 16-pin SOG is available
with either A or B version protection.
SW1
3
SW3
4
5
6
7
8
SW2
SW4
TEMPERATURE
SHUTDOWN
16
15
14
13
12
11
10
9
BAT
V
BAT
R
LINE
R
NC
RINGING
R
LATCH
INPUT
GND
D
12-2307.a (F)
Figure 2. 16-Pin, Plastic SOG
22Lucent Technologies Inc.
Page 3
Data Sheet
November 1999
L7581 Ringing Access Switch
Pin Information
(continued)
Table 1. Pin Descriptions
DIP SOGSymbolDescriptionDIP SOGSymbolDescription
11 F
GND
Fault ground.1616V
BAT
Battery voltage. Used as a ref-
erence for protection circuit.
24NCNo connection.1513NCNo connection.
32 T
43 T
56T
BAT
LINE
RINGING
Connect to TIP on SLIC side.1415R
Connect to TIP on line side.1314R
Connect to return ground for
1212R
BAT
LINE
RINGING
Connect to RING on SLIC side.
Connect to RING on line side.
Connect to ringing generator.
ringing generator.
67 V
DD
5 V supply.1111LATCHData latch control, active-high,
transparent low.
75NCNo connection.1010INPUTLogic level input switch control.
88 T
SD
Temperature shutdown pin. Can
99 D
GND
Digital ground.
be used as a logic level input or
output. See Table 12, Truth
Table, and the Switching Behavior section of this data sheet for
input pin description. As an output, will read 5 V when device is
in its operational mode and 0 V
in the thermal shutdown mode.
In the L7581, the thermal shutdown mechanism cannot be disabled.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings
can cause permanent damage to the device. These are
absolute stress ratings only. Functional operation of the
device is not implied at these or any other conditions in
excess of those given in the operational sections of the
data sheet. Exposure to absolute maximum ratings for
extended periods can adversely affect device reliability.
Table 2. Absolute Maximum Ratings Parameters
ParameterMinMaxUnit
Operating Temperature Range–40110°C
Storage Temperature Range–40150°C
Relative Humidity Range595%
Pin Soldering Temperature—10°C
5 V Power Supply—7V
Battery Supply—–85V
Logic Input Voltage—7V
Input-to-output Isolation—330V
Pole-to-pole Isolation—330V
Handling Precautions
Although protection circuitry has been designed into
this device, proper precautions should be taken to
avoid exposure to electrostatic discharge (ESD) during
handling and mounting. Lucent Technologies Microelectronics Group employs a human-body model
(HBM) and a charged-device model (CDM) for ESDsusceptibility testing and protection design evaluation.
ESD voltage thresholds are dependent on the circuit
parameters used to define the model. No industry-wide
standard has been adopted for CDM. However, a standard HBM (resistance = 1500 Ω, capacitance = 100 pF)
is widely used and therefore can be used for comparison purposes. The HBM ESD threshold presented
here was obtained by using these circuit parameters.
Table 3. HBM ESD Threshold Voltage
DeviceRating
L75811000 V
Lucent Technologies Inc.3
Page 4
L7581 Ringing Access Switch
Data Sheet
November 1999
Electrical Characteristics
TA = –40 °C to +85 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Ty pical values are characteristics of the device and are
the result of engineering evaluations. Typical v alues are for information purposes only and are not part of the testing requirements.
Table 4. Power Supply Specifications
SupplyMinTypMaxUnit
V
V
DD
BAT*
4.5 5 5.5 V
–19 —–72V
BAT
*V
is used only as a reference for internal protection circuitry. I f V
this state until the battery voltage drops below –15 V.
Table 5. Break Switches, 1 and 2
ParameterTest ConditionMeasureMin Typ Max Unit
OFF-state Leakage
Current:
+25 °C
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
+85 °C
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
–40 °C
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
ON-resistance
(SW1, SW2):
+25 °C
+85 °C
–40 °C
LINE
T
= ±10 mA, ±40 mA, T
LINE
T
= ±10 mA, ±40 mA, T
LINE
T
= ±10 mA, ±40 mA, T
ON-resistance MatchPer ON-resistance test
condition of SW1, SW2
LIMIT
ON-state Voltage*Iswitch = I
@ 50 Hz/60 HzV
dc Current Limit:
+85 °C
–40 °C
Dynamic Current Limit
(t = <0.5 µs)
Break switches in ON state; ringing
access switches off; apply ±1000 V at
Vswitch (on) = ±10 V
Vswitch (on) = ±10 V
10/1000 µs pulse; appropriate second-
ary protection in place
Isolation:
+25 °C
Vswitch (both poles) = ±320 V,
Logic inputs = Gnd
+85 °C
Vswitch (both poles) = ±330 V,
Logic inputs = Gnd
–40 °C
Vswitch (both poles) = ±310 V,
Logic inputs = Gnd
dV/dt Sensitivity
†
———200—V/µs
BA T
rises above –10 V, the device will enter an all OFF state and remain in
1
—
—
1
—
—
1
—
—
—
—
—
19.5
14.5
—
—
28
—
—0.21.0
——220V
80————
250mAmA
BAT
BAT
BAT
= –2 V
= –2 V
= –2 V
Iswitch
Iswitch
Iswitch
ON
V
∆
ON
V
∆
ON
V
∆
Magnitude
ON
R
SW1 – RON SW2
ON
Iswitch
Iswitch
Iswitch—2.5—A
1
—
Iswitch
Iswitch
Iswitch
—
—
—
—
—
1
1
µA
µA
µA
Ω
Ω
Ω
Ω
µA
µA
µA
* This parameter is not tested in production. Choice of secondary protector should ensure this rating is not exceeded.
† Applied voltage is 100 Vp-p square wave at 100 Hz.
4Lucent Technologies Inc.
Page 5
Data Sheet
November 1999
L7581 Ringing Access Switch
Electrical Characteristics
(continued)
Table 6. Ring Return Switch, 3
ParameterTest ConditionMeasure Min Typ Max Unit
OFF-state Leakage
Current (SW3):
+25 °C
Vswitch (differential) = –320 V to Gnd
Iswitch
—
—
1
Vswitch (differential) = –60 V to +260 V
+85 °C
Vswitch (differential) = –330 V to Gnd
Iswitch
—
—
1
Vswitch (differential) = –60 V to +270 V
–40 °C
Vswitch (differential) = –310 V to Gnd
Iswitch
—
—
1
Vswitch (differential) = –60 V to +250 V
dc Current LimitVswitch (on) = ±10 VIswitch—200—mA
Dynamic Current
Limit (t = <0.5 µs)
Break switches in ON state; ringing access switches
off; apply ±1000 V at 10/1000 µs pulse; appropriate
* This parameter is not tested in production. Choice of secondary protector should ensure this rating is not exceeded.
† Applied voltage is 100 Vp-p square wave at 100 Hz.
Table 7. Ringing Access Switch, 4
ParameterTest ConditionMeasureMin Typ Max Unit
OFF-state Leakage
Current (SW3):
+25 °C
Vswitch (differential) = –255 V to +210 V
Iswitch
—
1
—
Vswitch (differential) = +255 V to –210 V
+85 °C
Vswitch (differential) = –270 V to +210 V
Iswitch
—
1
—
Vswitch (differential) = +270 V to –210 V
–40 °C
Vswitch (differential) = –245 V to +210 V
Iswitch
—
1
—
Vswitch (differential) = +245 V to –210 V
ON-resistanceIswitch (on) = ±70 mA, ±80 mA
ON
V
∆
——12
ON VoltageIswitch (on) = ± 1 mA———3V
Ring Generator Current
* At the time of publication of this data sheet, the current device design will be a nominal 4 mA. Devices are being redesigned to reduce this
current to less than 2 mA nominally. Consult your Lucent Technologies Microelectronics Group account executive for additional details.
† Choice of secondary protector and series current-limit resistor should ensure these ratings are not exceeded.
‡ Applied voltage is 100 Vp-p square wave at 100 Hz.
Lucent Technologies Inc.5
Page 6
L7581 Ringing Access Switch
Data Sheet
November 1999
Electrical Characteristics
(continued)
Table 8. Additional Electrical Characteristics
ParameterTest ConditionMeasureMinTypMax Uni t
Digital Input Characteristics:
Input Low Voltage————1.5V
Input High Voltage——3.5——V
Input Leakage Current (high)V
* Temperature shutdown flag (TSD) will be high during normal operation and low during temperature shutdown state.
Zero Cross Current Turn Off
The ring access switch (SW4) is designed to turn off on
the next zero current crossing after application of the
appropriate logic input control. This switch requires a
current zero cross to turn off. Switch 4, once on, will
remain in the ON state (regardless of logic input) until a
current zero cross. Therefore, to ensure proper operation of switch 4, this switch should be connected, via
proper impedance, to the ringing generator or some
other ac source. Do not attempt to switch pure dc with
switch 4.
For a detailed explanation of the operation of switch 4,
please refer to the
Line Card Access Switches
An Introduction to L758X Series of
Application Note.
Switching Behavior
When switching from the power ringing state to the idle/
talk state via simple logic level input control, the L7581
is able to provide control with respect to the timing
when the ringing access contacts are released relative
to the state of the line break contacts.
Make-before-break operation occurs when the line
break switch contacts are closed (or made) before the
ringing access switch contact is opene d (or broken).
Break-before-make operation occurs when the ringing
access contact is opened (broke) before the line break
switch contacts are closed (made).
Using the logic level input pins INPUT and T
make-before-break or break-before-make operation of
the L7581 is easily achieved. The logic sequences for
either mode of operation are given in Table 9 and Table
10. See the Truth Table (Table 12) for an explanation of
the logic states.
SD
, either
6Lucent Technologies Inc.
Page 7
Data Sheet
November 1999
L7581 Ringing Access Switch
Switching Behavior
(continued)
and if current in excess of the SCR’s turn-on current is
also available, the SCR may turn on. Once the SCR is
When using an L7581 in the make-before-break mode,
during the ring-to-idle transit ion, for a period of up to
one-half the ringing frequency, the ring break switch
and the pnpn-type ring access switch can both be in
the ON state. This is the maximum time after the logic
signal at IN
RING
has transitioned that the ring access
switch is waiti ng f or the ne xt ze ro current c ross so it can
close. During this interval, current that is limited to the
dc break switch current-limit value will be sourced from
triggered on, if the SLIC is capable of supplying current
in excess of the holding current, the SCR may be
latched on by the SLIC.
The probability of this event depends on the characteristics of the given SLIC and of the holding current of the
L7581A device. The SCR hold current distribution is
designed to be safely away from the test limit of 80 mA.
The higher the distribution, the lower the probability of
the latch.
the ring node of the SLIC.
If this situation is of concern for a given board design,
This current is presented to the internal protection circuit. If the SCR-type protector is used (A code), if by
random probability the ring-to-idle transition occurs
either use the A series device in the break-before-make
mode (eliminates the original 25 ms current pulse) or
use a B series device (eliminates the SCR).
during a portion of the ring cycle when the ringing voltage exceeds the protection circuit SCR turn-on voltage,
Table 9. Make-Before-Break Operation
INPUTT
SDStateTiming
5 V5 V/FloatPower
Break
Switches 1 & 2
—OpenClosedClosed
Ring Return
Switch 3
Ring Access
Switch 4
Ringing
0 V5 V/FloatMake-
before-
break
SW4 waiting fo r next zero current
crossing to turn off, maximum
time—one-half of ringing. In this
ClosedOpenClosed
transition state, current that is limited to the dc break switch current-limit value will be sourced
from the ring node of the SLIC.
0 V5 V/FloatIdle/Talk Zero cross current has occurred.ClosedOpenOpen
Table 10. Break-Before-M ake Operation
INPUTT
SDStateTiming
5 V5 V/FloatPower
Break
Switches 1 & 2
—OpenClosedClosed
Ring Return
Switch 3
Ring Access
Switch 4
Ringing
5 V0 VAll OffHold this state for ≤25 ms. SW4
OpenOpenClosed
waiting for zero current to turn off.
0 V0 VAll OffZero current has occurred and
OpenOpenOpen
SW4 has opened. Transition on
INPUT should occur during 25 ms
hold.
Both the 5 V and battery supply are brought onto the
L7581. The L7581 requires only the 5 V supply for
switch operation; that is, state control is powered exclusively off of the 5 V supply. Because of this, the L7581
offers extremely low power dissipation, both in the idle
and active states.
The battery voltage is not used for switch state control.
The battery is used as a reference voltage by the integrated secondary protection circuit. When the voltage
BAT
at T
integrated SCR will trigger, thus preventing faultinduced overvoltage situations at the T
or R
BAT
drops 2 V to 4 V below the battery, the
BAT/RBAT
nodes.
Loss of Battery Voltage
As an additional protection feature, the L7581 monitors
the battery voltage. Upon loss of battery voltage, the
L7581 will automatically enter an all OFF state and
remain in that state until the battery voltage is restored.
The L7581 is designed so that the device will enter the
all OFF state if the battery rises above –10 V and will
remain off until the battery drops below –15 V.
Monitoring the battery for the automatic shutdown feature will draw a small current from the battery, typically
4 µA. This will add slightly to the overall power dissipation of the device.
Impulse Noise
Using the L7581 will minimize and possibly eliminate
the contribution to the overall system impulse noise
that is associated with ringing access switches.
Because of this characteristic of the L7581, it may not
be necessary to incorporate a zero cross switching
scheme. This ultimately depends upon the characteristics of the individual system and is best evaluated at
the board level.
Protection
Integrated SLIC Protection
Diode Bridge/SCR
In the L7581A
or other subsequent circuitry is provided by a combination of current-limited break switches, a diode bridge/
SCR clamping circuit, and a thermal shutdown mechanism. In the L7581B
device or other subsequent circuitry is provided by a
combination of current-limited break switches, a diode
bridge, and a thermal shutdown mechanism.
In both versions, during a positive lightning event, fault
current is directed to ground via steering diodes in the
diode bridge. Voltage is clamped to a diode drop above
ground. In the A version, negative lightning causes the
SCR to conduct when the voltage goes 2 V to 4 V more
negative than the battery, and fault currents are
directed to ground via the SCR and steering diodes in
the diode bridge.
Note that for the SCR to foldback or crowbar, the ON
voltage (see Table 10) of the SCR must be less negative than the battery reference voltage. If the battery
voltage is less negative than the SCR ON voltage, the
SCR will conduct fault currents to ground; however, it
will not crowbar.
In the B version, negative lightning is directed to battery
via steering diodes in the diode bridge.
For power cross and power induction faults, in both versions, the positive cycle of the fault is clamped a diode
drop above ground and fault currents steered to
ground. In the A version, the negative cycle will cause
the SCR to trigger when the voltage exceeds the battery reference voltage by 2 V to 4 V. When the SCR
triggers, fault current is steered to ground. In the B version, the negative cycle of the power cross is steered to
battery.
Current Limiting
xx version, protection to the SLIC device
xx version, protection to the SLIC
During a lightning event, the current that is passed
through the break switches and presented to the integrated protection circuit and subsequent circuitry is limited by the dynamic current-limit response of the break
switches (assuming idle/talk state). When the voltage
seen at the T
an external secondary protector, upon application of a
1000 V 10 x 1000 pulse (LSSGR lightning), the current
seen at the T
magnitude 2.5 A and duration less than 0.5 µs.
88Lucent Technologies Inc.
LINE/RLINE
BAT/RBAT
nodes is properly clamped by
nodes will typically be a pulse of
Page 9
Data Sheet
November 1999
L7581 Ringing Access Switch
Protection
Integrated SLIC Protection
(continued)
(continued)
During a power cross event, the current that is passed
through the break switches and presented to the integrated protection circuit and subsequent circuitry is limited by the dc current-limit response of the break
switches (assuming idle/talk state). The dc current limit
is specified over temperature between 100 mA and
250 mA.
Note that the current-limit circuitry has a negative temperature coefficient. Thus, if the device is subjected to
an extended power cross, the value of current seen at
BAT/RBAT
T
will decrease as the device heats due to the
fault current. If sufficient heating occurs, the temperature shutdown mechanism will activate and the device
will enter an all off mode.
Temperature Shutdown Mechanism
When the device temperature reaches a minimum of
110 °C, the thermal shutdown mechanism will activate
and force the device into an all OFF state, regardless of
the logic input pins. Pin T
SD
, when used as an output,
will read 0 V when the device is in the thermal shutdown mode and +V
DD
during norm al operation.
During a lightning event, due to the relatively short
duration, the thermal shutdown will not typically activate.
In the L7581, the thermal shutdown mechanism
cannot be disabled by logic control at the T
The functionality of T
SD
differs from the L7541, L7582,
SD
pin.
and L7583. For the proper use of and understanding of
any caveats related to T
SD
, please refer to the appropri-
ate data sheet specifications.
Electrical specifications relating to the overvoltage
clamping circuit are outlined in Table 11.
External Secondary Protector
With the above integrated protection features, only one
overvoltage secondary protection device on the loop
side of the L7581 is required. The purpose of this
device is to limit fault voltages seen by the L7581 so as
not to exceed the breakdown voltage or input-output
isolation rating of the device. To minimize stress on the
L7581, use of a foldback- or crowbar-type device is recommended. A detailed explanation and design equations on the choice of the external secondary
protection device are given in the
L758X Series of Line Card Access Switches
An Introduction to
Application Note. Basic design equations governing the choice
of external secondary protector are given below:
|
V
■
BATmax
|
V
■
ringingpeakmax
|
V
breakdownmin(ring)
|
V
■
ringingpeakmax
| + |V
breakovermax
| + |V
|
|
+ |V
BATmax
BATmax
|
< |V
breakdownmin(break)
|
+ |V
breakovermax
|
< |V
breakovermin
|
|
|
<
where:
During an extended power cross, the device temperature will rise and cause the device to enter the thermal
shutdown mode. This forces an all off mode, and the
current seen at T
BAT/RBAT
drops to zero. Once in the
thermal shutdown mode, the device will cool and exit
the thermal shutdown mode, thus reentering the state it
was in prior to thermal shutdown. Current, limited to the
dc current-limit value, will again begin to flow and
device heating will begin again. This cycle of entering
and exiting thermal shutdown will last as long as the
power cross fault is present. The frequency of entering
and exiting thermal shutdown will depend on the magnitude of the power cross.
If the magnitude of the power cross is great enough,
the external secondary protector may trigger shunting
all current to ground.
V
V
—Maximum magnitude of battery voltage.
BATmax
breakovermax
—Maximum magnitude breakover voltage
of external secondary protector.
V
breakovermin
—Minimum magnitude breakover voltage
of external secondary protector.
V
breakdownmin(break)
—Minimum magnitude breakdown
voltage of L7581 break switch.
V
breakdownmin(ring)
—Minimum magnitude breakdown
voltage of L7581 ring access switch.
V
ringingpeakmax
—Maximum magnitude peak voltage of
ringing signal.
Series current-limiting fused resistors or PTCs should
be chosen so as not to exceed the current rating of the
external secondary protector. Refer to the manufacturer’s data sheet for specifications.
Surge Current————
Gate Trigger Current*
Gate Trigger Current
†
†
Temperature
———2550mA
———–0.5—%/°C
‡
Coefficient
Hold Current——70—mA
Gate Trigger VoltageTrigger current—V
Reverse Leakage CurrentV
ON-State Voltage
§
0.5 A, t = 0.5 µs
2.0 A, t = 0.5 µs
BAT
———1.0µA
ON
V
—
– 4—V
BAT
—
—
–3
–5
– 2V
BAT
—
—
A
V
V
* Previous versions of this data sheet specified a Trigger Current of 50 mA minimum. Trigger Current is defined as the minimum current drawn
from tip and ring to turn on the SCR. The specification in this data sheet is Gate Trigger Current, which is defined as the maximum current
that can flow into the battery before the SCR turns on.
† Typical at 25 °C.
‡ Twice ± dynamic current limit of break switches.
§ In some instances, the typical ON-state voltage can range as low as –25 V.
10Lucent Technologies Inc.
Page 11
Data Sheet
+I
+V
–1.5 V
2/3 R
ON
CURRENT
LIMITING
–I
–V
CURRENT
LIMITING
I
LIMIT
I
LIMIT
R
ON
1.5 V
2/3 R
ON
R
ON
+I
+V
OS
+V
R
ON
–V
OS
–I
–V
November 1999
Typical Performance Characteristics
dc CURRENT-LIMIT
BREAK SWITCHES
BAT
V
– 2
BAT
V
– 4
BAT
V
ON
V
L7581 Ringing Access Switch
<1 µA
50 mA
Figure 3. Protection Circuit A Version
dc CURRENT-LIMIT
BREAK SWITCHES
BAT
– 3
V
BAT
V
<1 µA
3 V
dc CURRENT LIMIT
(OF BREAK SWITCHES)
H
I
12-2309.f (F)
3 V
12-2311 (F)
Figure 5. Switches 1—3
dc CURRENT LIMIT
(OF BREAK SWITCHES)
12-2309.b (F)
Figure 6. Switch 4
Figure 4. Protection Circuit B Version
Lucent Technologies Inc.11
12-2312 (F)
Page 12
L7581 Ringing Access Switch
Application
R1
TIP
CROWBAR
PROTECTION
SW3
SW1
SCR
AND
TRIP
CKT
BAT
V
(REFERENCE)
Data Sheet
November 1999
TIP
BATTERY
FEED
RING
R2
SW2
SW4
RING
GENERATOR
BATTERY
Figure 7. Typical RAS Application, A Version, Idle, or Talk State Shown
Table 12. Truth Table
INPUTT
0 V5 V/Float
5 V5 V/Float
Don’t Care0 V
1. Thermal shutdown mechanism is active with TSD floating or equal to 5 V.
2. Forcing T
3. Idle/Talk state.
4. Power ringing state.
5. All OFF state.
SD
to ground overrides the logic input pins and forces an all OFF state.
SDTip Break Switch Ring Break SwitchRinging Return SwitchRing Switch
1
1
2
OnOnOffOff
OffOffOnOn
OffOffOffOff
RING
12-3074.e (F)
3
4
5
A parallel in/parallel out data latch is integrated into the L7581. Operation of the data latch is controlled by the logic
level input pin LATCH. The data input to the latch is the INPUT pin of the L7581, and the output of the data latch is
an internal node used for state control.
When the LATCH control pin is at logic 0, the data latch is transparent and data control signals flow directly from
INPUT, through the data latch to state control. Any changes in INPUT will be reflected in the state of the switches.
When the LATCH control pin is at logic 1, the data latch is active—the L7581 will no longer react to changes at the
INPUT control pin. The state of the switches is now latched; that is, the state of the switches will remain as they
were when the LATCH input transitioned from logic 0 to logic 1. The switches will not respond to changes in INPUT
as long as LATCH is held high.
Note that the T
SD
input is not tied to the data latch. TSD is not affected by the LATCH input. TSD input will override
state control via INPUT and LATCH.
12Lucent Technologies Inc.
Page 13
Data Sheet
November 1999
L7581 Ringing Access Switch
Outline Diagrams
16-Pin, Plastic SOG (L7581AAE/BAE)
Note: The dimensions in this outline diagram are intended for informational purposes only. F or detailed schematics
to assist your design efforts, please contact your Lucent Technologies Sales Representative.
L
N
B
1
PIN #1 IDENTIFIER ZONE
H
SEATING PLANE
1.27 TYP
Number
of Pins
(N)
0.51 MAX
Maximum
Length
(L)
0.28 MAX
Maximum Width
Without Leads
(B)
0.10
Maximum Width
Including Leads
(W)
0.61
Maximum Height
1610.497.6210.642.67
W
Above Board
(H)
5-4414r2 (C)
Lucent Technologies Inc.13
Page 14
L7581 Ringing Access Switch
Data Sheet
November 1999
Outline Diagrams
(continued)
16-Pin, Plastic DIP (L7581AC/BC)
Note: The dimensions in this outline diagram are intended for informational purposes only. For detailed schematics
to assist your design efforts, please contact your Lucent Technologies Sales Representative.
*Devices on tape and reel must be ordered in 1000-piece increments.
Lucent Technologies Inc.15
Page 16
For additional information, contact your Microelectronics Group Account Manager or the following:
INTERNET:
E-MAIL:
N. AMERICA:Microelectronics Group, Lucent Technologies In c., 55 5 Uni on Boulevard, Room 30L-15P-BA, Allentown, PA 1 81 03
ASIA PACIFIC:Microelectronics Group, Lucent Technologies Singapore Pte. Ltd . , 77 Science Park Drive, #03-18 Cintech III, Singapore 118256
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EUROPE: Data Requests: MICROELECTRONICS GROUP DATALINE:
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rights under any patent accompany the sale of any such product(s) or information.