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0.5–10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25735
Features
• High Output Power:
19.0␣ Bm Typical P
• High Gain:
12.5␣ dB Typical G
• Low Noise Figure:
1.2 dB Typical at 4 GHz
• Cost Effective Ceramic
Microstrip Package
at 4␣ GHz
1 dB
at 4 GHz
1 dB
Description
The ATF-25735 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a cost effective
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
G
P
G
g
I
DSS
V
A
1 dB
1 dB
m
P
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 2. 0 GHz dB 1.0
O
Gain @ NFO: VDS = 3 V, IDS = 20 mA f = 2.0 GHz dB 15.0
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 19.0
VDS =5 V, IDS = 50 mA
1 dB Compressed Gain: VDS = 5 V, IDS =50 mA f = 4.0 GHz dB 12.5
Transconductance: VDS =3 V, VGS = 0 V mmho 50 80
Saturated Drain Current: VDS =3 V, VGS = 0 V m A 50 100 150
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.0 -2.0 -0.8
microstrip package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
= 25° C
A
35 micro-X Package
f = 4.0 GHz 1.2 1.5
f = 6.0 GHz 1.4
f = 4.0 GHz 11.5 13.0
f =.6.0 GHz 10.5
5-63
5965-8710E
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ATF-25735 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Thermal Resistance: θjc = 325°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
ATF-25735 Typical Performance, T
25
20
15
10
GAIN (dB)
Drain-Source Voltage V +7
Gate-Source Voltage V -4
Gate-Drain Voltage V -8
Drain Current mA I
Power Dissipation
[2,3]
m W 450
Channel Temperature ° C 175
Storage Temperature
MSG
|S21|
2
MAG
[4]
25
20
15
10
GAIN (dB)
°C -65 to +175
[5[
= 25° C
A
MSG
2
|S21|
= 150°C
CH
DSS
MAG
[1]
MSG
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 3 mW/°C for
> 29°C.
T
CASE
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
5. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
5
0
0.5 1.0 2.0 4.0
FREQUENCY (GHz)
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
6.0 8.0 12.0
5
0
0.5 1.0 2.0 4.0
FREQUENCY (GHz)
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
6.0 8.0 12.0
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Page 3
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=3 V, I
DS
=␣ 20 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .98 -22 13.9 4.95 159 -32.0 .025 77 .52 -12
1.0 .94 -45 13.3 4.61 142 -27.1 .044 64 .52 -20
2.0 .85 -82 12.2 4.06 110 -21.6 .083 45 .46 -41
3.0 .70 -116 11.0 3.54 81 -19.3 .109 24 .38 -61
4.0 .58 -152 10.0 3.17 54 -17.7 .131 12 .35 -81
5.0 .50 165 8.9 2.78 27 -16.7 .146 -7 .29 -97
6.0 .52 122 7.7 2.43 1 -16.1 .156 -20 .18 -112
7.0 .59 90 6.3 2.06 -23 -15.8 .162 -34 .07 -161
8.0 .65 66 5.1 1.79 -43 -15.5 .167 -46 .09 107
9.0 .69 44 3.8 1.55 -63 -15.3 .172 -53 .15 76
10.0 .73 32 2.7 1.36 -82 -15.4 .170 -65 .18 53
11.0 .79 20 1.1 1.14 -100 -15.5 .168 -78 .21 24
12.0 .84 7 -0.2 .98 -119 -15.7 .161 -93 .26 -5
22
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=5 V, I
DS
=␣ 50 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .93 -21 16.0 6.29 156 -34.0 .020 69 .56 -10
1.0 .88 -42 15.4 5.89 140 -29.6 .033 62 .53 -21
2.0 .78 -81 14.1 5.08 108 -24.4 .060 49 .47 -43
3.0 .65 -112 12.6 4.27 83 -22.6 .074 39 .44 -55
4.0 .55 -142 11.4 3.73 58 -21.0 .089 28 .41 -64
5.0 .48 -176 10.6 3.37 36 -19.7 .104 20 .37 -69
6.0 .47 142 9.7 3.04 10 -18.3 .122 6 .28 -83
7.0 .56 104 8.4 2.64 -14 -17.5 .134 -6 .14 -105
8.0 .65 80 7.0 2.25 -35 -16.7 .146 -17 .07 172
9.0 .73 61 5.8 1.94 -53 -16.1 .157 -26 .14 113
10.0 .78 47 4.7 1.71 -72 -15.4 .169 -40 .20 94
11.0 .80 34 3.6 1.51 -90 -15.1 .176 -53 .27 68
12.0 .85 18 2.7 1.36 -109 -14.8 .181 -64 .36 45
A model for this device is available in the DEVICE MODELS section.
22
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Page 4
35 micro-X Package Dimensions
4
.085
2.15
SOURCE
.083
2.11
DIA.
.057 ± .010
1.45 ± .25
.022
.56
GATE
13
257
2
SOURCE
.100
2.54
.455 ± .030
11.54 ± .76
DRAIN
.020
.508
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
in
mm
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