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0.5 – 10 GHz General Purpose
Gallium Arsenide FET
Technical Data
ATF-25570
Features
• High Output Power:
20.5 dBm Typical P
• Low Noise Figure:
1.0 dB Typical at 4 GHz
• High Associated Gain:
14.0␣ dB Typical at 4␣ GHz
• Hermetic Gold-Ceramic
Microstrip Package
at 4␣ GHz
1 dB
Description
The ATF-25570 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
housed in a hermetic, high reliabil-
Electrical Specifications, T
Symbol Parameters and Test Conditions Units Min. Typ. Max.
NF
G
P
G
g
I
DSS
V
A
1 dB
1 dB
m
P
Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 4.0 GHz dB 1.0 1.3
O
Gain @ NFO: VDS = 3 V, IDS = 20 mA f = 4.0 GHz dB 13.0 14.0
Power Output @ 1 dB Gain Compression: f = 4.0 GHz dBm 20.5
VDS =5 V, IDS = 50 mA
1 dB Compressed Gain: VDS =5 V, IDS =50 mA f = 4.0 GHz dB 13.0
Transconductance: VDS =3 V, VGS = 0 V mmho 50 80
Saturated Drain Current: VDS = 3 V, VGS = 0 V m A 50 100 150
Pinch-off Voltage: VDS = 3 V, IDS = 1 mA V -3.0 -2.0 -0.8
ity package. This device is
designed for use in general
purpose amplifier and oscillator
applications in the 0.5-10 GHz
frequency range.
This GaAs FET device has a
nominal 0.3 micron gate length
using airbridge interconnects
between drain fingers. Total gate
periphery is 500 microns. Proven
gold based metallization systems
and nitride passivation assure a
rugged, reliable device.
= 25° C
A
70 mil Package
f = 6.0 GHz 1.2
f = 8.0 GHz 1.4
f = 6.0 GHz 11.0
f = 8.0 GHz 8.5
5965-8711E
5-60
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ATF-25570 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
DS
V
GS
V
GD
I
DS
P
T
T
CH
T
STG
Thermal Resistance: θjc = 300°C/W; T
Liquid Crystal Measurement: 1␣ µm Spot Size
Drain-Source Voltage V +7
Gate-Source Voltage V -4
Gate-Drain Voltage V -8
Drain Current mA I
Power Dissipation
[2,3]
m W 450
Channel Temperature °C 175
Storage Temperature °C -65 to +175
= 150°C
CH
[4]
DSS
[1]
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE TEMPERATURE
= 25°C.
3. Derate at 3.3 mW/°C for
> 40°C.
T
CASE
4. The small spot size of this technique results in a higher, though
more accurate determination of θ
than do alternate methods. See
MEASUREMENTS section for
more information.
jc
ATF-25570 Typical Performance, T
25
20
15
10
GAIN (dB)
5
0
0.5 1.0 2.0 4.0
Figure 1. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 3 V, IDS = 20 mA.
MSG
2
|S21|
FREQUENCY (GHz)
MAG
6.0 8.0 12.0
25
20
15
10
GAIN (dB)
5
0
0.5 1.0 2.0 4.0
Figure 2. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 5 V, IDS = 50 mA.
= 25° C
A
FREQUENCY (GHz)
|S21|
MSG
MAG
2
6.0 8.0 12.0
5-61
Page 3
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=3 V, I
DS
=␣ 20 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .98 -24 14.0 5.02 160 -28.9 .036 71 .56 -24
1.0 .96 -41 13.4 4.70 145 -26.2 .049 62 .55 -33
2.0 .84 -76 12.3 4.14 115 -22.5 .075 44 .49 -51
3.0 .78 -100 10.8 3.48 94 -20.9 .090 33 .46 -60
4.0 .72 -123 9.6 3.01 73 -19.8 .102 20 .42 -76
5.0 .68 -142 8.5 2.67 54 -18.8 .114 9 .38 -88
6.0 .63 -162 7.8 2.45 36 -18.3 .121 0 .35 -101
7.0 .60 175 7.2 2.30 18 -17.5 .133 -7 .30 -118
8.0 .58 150 6.3 2.06 -1 -17.0 .141 -16 .26 -138
9.0 .59 128 5.6 1.90 -19 -16.7 .146 -28 .25 -167
10.0 .60 113 4.7 1.72 -36 -16.4 .151 -35 .26 172
11.0 .60 104 4.1 1.61 -48 -16.1 .157 -40 .28 155
12.0 .59 91 3.9 1.56 -68 -15.9 .160 -44 .30 146
22
Typical Scattering Parameters, Common Emitter, Z
Freq. S
11
S
21
= 50 Ω, TA=25°C, V
O
S
12
=5 V, I
DS
=␣ 50 mA
DS␣
S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 .97 -27 16.2 6.49 156 -32.0 .025 63 .59 -21
1.0 .94 -45 15.5 5.95 141 -29.9 .032 57 .60 -28
2.0 .81 -82 13.5 4.72 111 -26.2 .049 45 .58 -39
3.0 .73 -105 11.7 3.86 91 -24.9 .057 41 .55 -50
4.0 .66 -128 10.3 3.29 70 -23.4 .068 37 .52 -62
5.0 .61 -148 9.2 2.88 52 -22.5 .075 32 .49 -72
6.0 .57 -170 8.5 2.65 34 -21.6 .083 30 .48 -84
7.0 .56 167 7.6 2.41 16 -20.2 .097 28 .45 -98
8.0 .57 145 6.8 2.19 -1 -19.2 .110 18 .42 -115
9.0 .59 127 6.0 2.00 -18 -18.5 .119 12 .40 -136
10.0 .60 115 5.2 1.82 -35 -17.8 .129 4 .40 -159
11.0 .60 108 4.7 1.72 -47 -17.5 .134 1 .42 -176
12.0 .57 93 4.5 1.67 -64 -16.9 .143 -10 .44 173
A model for this device is available in the DEVICE MODELS section.
70 mil Package Dimensions
.040
1.02
SOURCE
4
.020
.508
22
GATE
1
.004 ± .002
.10 ± .05
SOURCE
.495 ± .030
12.57 ± .76
.070
1.70
DRAIN
3
Notes:
(unless otherwise specified)
2
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
in
mm
5-62
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