– 5.0 (VCC = 4.5V to 5.5V)
– 2.7 (VCC = 2.7V to 5.5V)
– 2.5 (VCC = 2.5V to 5.5V)
•
3-Wire Serial Interface
•
Schmitt Trigger, Filtered Inputs for Noise Suppression
•
2 MHz Clock Rate (5V) Compatibility
•
Self-Timed Write Cycle (10 ms max)
•
High Reliability
– Endurance: 1 Million Write Cycles
– Data Retention: 100 Years
– ESD Protection: > 4000V
•
Automotive Grade and Extended Temperature Devices Available
•
8-Pin PDIP and JEDEC SOIC Packages
Description
The AT93C46C provides 1024 bits of serial electrically-erasable programmable read
only memory (EEPROM) organized as 64 words of 16 bits each. The devi ce is optimized for use in many industrial and commercial appl ications where lo w-power and
low-voltage operation are essential. The AT93C46C is available in space saving 8-pin
PDIP and 8-pin JEDEC packages.
The AT93C46C is enabled through the Chip Select pin (CS) , and accessed vi a a 3wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock
(SK). Upon receiving a READ instruction at DI, the address is decoded and the data is
clocked out serially on the data output pin DO. The WRITE cycl e is completely selftimed and no separate ERASE cycle is required before WRITE. The WRITE cycle is
only enabled when the part is in the ERASE/WRITE ENABLE state. When CS is
brought “high” followin g the initiation of a WRITE cy cle, the DO pin outputs the
READY/BUSY status of the part.
The AT93C46C is available in 4.5V to 5.5V, 2.7V to 5.5V, and 2.5V to 5.5V versions.
3-Wire
Serial EEPROM
1K (64 x 16)
AT93C46C
Pin Configurations
Pin NameFunction
CSChip Select
SKSerial Data Clock
DISerial Data Input
DOSerial Data Output
GNDGround
VCCPower Supply
NCNo Connect
DCDon’t Connect
CS
SK
DI
DO
CS
SK
DI
DO
8-Pin PDIP
1
2
3
4
8-Pin SOIC
1
2
3
4
8
VCC
7
DC
6
NC
5
GND
VCC
8
DC
7
NC
6
GND
5
3-Wire, 1K
Serial E
2
PROM
Rev. 1122A–07/98
1
Page 2
Absolute Maximum Ratings*
Operating Temperature.................................. -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
Voltage on Any Pin
with Respect to Ground.....................................-1.0V to +7.0V
Maximum Operating Voltage........................................... 6.25V
DC Output Current........................................................5.0 mA
Block Diagram
*NOTICE:Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the de vic e. T his is a stres s r ating o nly an d
functional opera tion of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reli abi li ty.
Pin Capacitance
(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).
Test ConditionsMaxUnitsConditions
C
OUT
C
IN
Note:1. This parameter is characterized and is not 100% tested.
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +2.5V to +5.5V,
= 0°C to +70°C, VCC = +2.5V to +5.5V (unless otherwise noted).
T
AC
SymbolParameterTest ConditionMinTypMaxUnits
V
V
V
I
I
I
I
I
I
V
V
V
V
V
V
CC1
CC2
CC3
CC
SB1
SB2
SB3
IL
OL
IL1
IH1
OL1
OH1
OL2
OH2
(1)
(1)
Supply Voltage2.55.5V
Supply Voltage2.75.5V
Supply Voltage4.55.5V
Supply Current
V
= 5.0V
CC
READ at 1.0 MHz0.52.0mA
WRITE at 1.0 MHz0.52.0mA
Standby CurrentVCC = 2.5VCS = 0V14.020.0µA
Standby CurrentVCC = 2.7VCS = 0V14.020.0µA
Standby CurrentVCC = 5.0VCS = 0V35.050.0µA
Input LeakageVIN = 0V to VCC 0.11.0µA
Output LeakageVIN = 0V to VCC 0.11.0µA
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
2.5V ≤ VCC ≤ 5.5V
4.5V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 2.7V
CC
I
= 2.1 mA0.4V
OL
I
= -0.4 mA2.4V
OH
= 0.15 mA0.2V
I
OL
IOH = -100 µAV
Note:1. VIL min and VIH max are reference only and are not tested.
-0.6
V
x 0.7
CC
- 0.2V
CC
x 0.3
V
CC
V
+ 1
CC
V
AC Characteristics
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = +2.5V to + 5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
SymbolParameterTest ConditionMinTypMaxUnits
f
t
t
t
t
SK
SKH
SKL
CS
CSS
SK Clock Frequency4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
SK High Time4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
SK Low Time4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
Minimum CS Low Time4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
CS Setup TimeRelative to SK4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
0
0
0
250
250
500
250
250
500
250
250
500
50
50
100
2
1
0.5
MHz
ns
ns
ns
ns
3
Page 4
AC Characteristics (Continued)
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = +2.5V to + 5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
SymbolParameterTest ConditionMinTypMaxUnits
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
WP
Endurance
Note:1. This parameter is characterized and is not 100% tested.
DI Setup TimeRelative to SK4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
100
100
200
CS Hold TimeRelative to SK0ns
DI Hold TimeRelative to SK4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
Output Delay to ‘1’AC Test4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
Output Delay to ‘0’AC Test4.5V ≤ VCC ≤ 5.5V
2.7V ≤ V
2.5V ≤ V
≤ 5.5V
CC
≤ 5.5V
CC
CS to Status ValidAC Test4.5V ≤ VCC ≤ 5.5V
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
≤ 5.5V
CC
CS to DO in High ImpedanceAC Test
CS = V
2.7V ≤ V
2.5V ≤ V
4.5V ≤ VCC ≤ 5.5V
IL
2.7V ≤ V
2.5V ≤ V
100
100
200
250
250
500
250
250
500
250
250
500
100
100
200
Write Cycle Time0.110ms
4.5V ≤ V
(1)
5.0V, 25°C, Page Mode1 MWrite Cycle
≤ 5.5V1ms
CC
ns
ns
ns
ns
ns
ns
Instruction Set for the AT93C46C
Address
InstructionSBOp Code
READ110A
5
- A
0
EWEN10011XXXXWrite enable must precede all programming modes.
ERASE111A
WRITE101A
5
5
- A
- A
0
0
ERAL10010XXXXErases all memory locations. Valid only at V
WRAL10001XXXXWrites all memory locations. Valid only at VCC = 4.5V to 5.5V.
EWDS10000XXXXDisables all programming instructions.
4
AT93C46C
Commentsx 16
Reads data stored in memory, at specified address.
Erase memory location An - A0.
Writes memory location An - A0.
= 4.5V to 5.5V.
CC
Page 5
Functional Description
The AT93C46C is accessed via a simple and vers atile
three-wire serial communication interface. Device operation is controlle d by se ven ins tructio ns issued by the host
processor.
of CS
appropriate Op Code and the desired memory Address
location.
READ (READ):
the Address code fo r the me mor y l oc ati on to be re ad. A fter
the instruction and address are decoded, data from the
selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic ‘0’) precedes the 16-bit data output string.
ERASE/WRITE (EWEN):
part automatically go es into the Erase/Write Dis able
(EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before
any programming instructions can be carried out. Please
note that once in the Erase/Write Enable state, programming remains e nabled until an Erase/Write Disable
(EWDS) instruction is executed or V
from the part.
ERASE (ERASE):
grams all bits in the specified memory location to the logical
‘1’ state. The self-timed erase cycle starts once the ERASE
instruction and address are decoded. The DO pin outputs
the READY/BUSY status of the part if CS is brought high
after being kept low for a minimum of 250 ns (t
‘1’ at pin DO indicates that the selected memory location
has been erase d, and the part is ready for an other inst ruction.
A valid instruction starts with a rising edge
and consists of a Start Bit (logic ‘1’) followed by the
The Read (READ) instructio n contains
To assure data integrity, the
power is removed
CC
The Erase (ERASE) instruction pr o-
). A logic
CS
AT93C46C
WRITE (WRITE):
the 16 bits of data to be written into the specified memory
location. The self-timed programming cycle t
the last bit of data is received at serial data input pin DI.
The DO pin outputs the READY/BUSY status of the part if
CS is brought high after being kept low for a minimum of
250 ns (t
). A logic ‘0’ at DO indicates that programming is
CS
still in progress. A logic ‘1’ indicates that the memory location at the specified ad dr ess h as been wr itte n wi th th e da ta
pattern contained in the instruction and the part is ready for
further instructions.
obtained if the CS is brought high after the end of the
self-timed programming cycle, t
ERASE ALL (E RAL):
programs every bit in the memory array to the logic ‘1’ state
and is primarily u sed for testi ng purpos es. The DO pin outputs the READY/BU SY status of the pa rt if CS is brough t
high after being kept low for a minimum of 250 ns (t
ERAL instruction is vali d only at V
WRITE ALL (WRAL):
programs all memory locations with the data patterns specified in the instruction. The DO pin outputs the
READY/BUSY sta tus of the pa rt if CS i s brought h igh after
being kept low for a minimum of 250 ns (t
instruction is valid only at V
ERASE/WRITE DI SABLE (EWDS):
accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be
executed after all programming operations. The operation
of the READ instruction is independent of both the EWEN
and EWDS instructions and can be executed at any time.