Page 1
Tj
-30 /
standard specification
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
PHASE CONTROL THYRISTOR AT807
Repetitive voltage up to 2400 V
Mean on-state current 835 A
Surge current 10 kA
FINAL SPECIFICATION
Feb 97 - ISSUE : 04
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
Symbol Characteristic Conditions
[°C]
Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 125 2400 V
V RSM Non-repetitive peak reverse voltage 125 2500 V
V DRM Repetitive peak off-state voltage 125 2400 V
I RRM Repetitive peak reverse current V=VRRM 125 50 mA
I DRM Repetitive peak off-state current V=VDRM 125 50 mA
CONDUCTING
I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 835 A
I T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 660 A
I TSM Surge on-state current sine wave, 10 ms 125 10 kA
I² t I² t without reverse voltage 500 x1E3 A²s
V T On-state voltage On-state current = 1600 A 25 2 V
V T(TO) Threshold voltage 125 1.12 V
r T On-state slope resistance 125 0.552 mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 900 A, gate 10V 5ohm 125 200 A/µs
dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs
td Gate controlled delay time, typical VD=100V, gate source 25V, 10 ohm , tr=.5 µs 25 1.3 µs
tq Circuit commutated turn-off time, typical dV/dt = 20 V/µs linear up to 75% VDRM 320 µs
Q rr Reverse recovery charge di/dt=-20 A/µs, I= 600 A 125 µC
I rr Peak reverse recovery current VR= 50 V A
I H Holding current, typical VD=5V, gate open circuit 25 300 mA
I L Latching current, typical VD=5V, tp=30µs 25 700 mA
GATE
V GT Gate trigger voltage VD=5V 25 3.5 V
I GT Gate trigger current VD=5V 25 250 mA
V GD Non-trigger gate voltage, min. VD=VDRM 125 0.25 V
V FGM Peak gate voltage (forward) 30 V
I FGM Peak gate current 10 A
V RGM Peak gate voltage (reverse) 5 V
P GM Peak gate power dissipation Pulse width 100 µs 150 W
P G Average gate power dissipation 2 W
MOUNTING
R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 37 °C/kW
R th(c-h) Thermal impedance Case to heatsink, double side cooled 7 °C/kW
T j Operating junction temperature
F Mounting force 11.8 / 13.2 kN
Mass 300 g
ORDERING INFORMATION : AT807 S 24
VDRM&VRRM/100
125 °C
Page 2
AT807 PHASE CONTROL THYRISTOR
ANSALDO
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Th [°C]
130
120
110
100
90
80
70
60
50
PF(AV) [W]
2000
1800
1600
1400
1200
1000
30°
60°
90°
120°
180°
DC
0 200 400 600 800 1000 1200
IF(AV) [A]
DC
180°
120°
90°
60°
30°
800
600
400
200
0
0 200 400 600 800 1000 1200
IF(AV) [A]
Page 3
AT807 PHASE CONTROL THYRISTOR
ANSALDO
ANSALDO
DISSIPATION CHARACTERISTICS
SINE WAVE
Th [°C]
130
120
110
100
90
30°
80
60°
70
60
50
0 200 400 600 800 1000 1200
90°
120°
180°
PF(AV) [W]
2000
1800
1600
1400
1200
1000
800
600
400
200
0
IF(AV) [A]
180°
120°
90°
60°
30°
0 200 400 600 800 1000 1200
IF(AV) [A]
Page 4
AT807 PHASE CONTROL THYRISTOR
ON-STATE CHARACTERISTIC
On-state Current [A]
Zth j-h [°C/kW]
SURGE CHARACTERISTIC
ITSM [kA]
ANSALDO
FINAL SPECIFICATION Feb 97 - ISSUE : 04
Tj = 125 °C
3000
2500
2000
1500
1000
500
0
0.6 1.1 1.6 2.1 2.6
On-state Voltage [V]
Tj = 125 °C
10
9
8
7
6
5
4
3
2
1
0
1 10 100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001 0.01 0.1 1 10 100
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03
mm and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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