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POSEICO SPA
OSEICO
OSEICO SPA
Ower SEmiconductors Italian COrporation
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
PHASE CONTROL THYRISTOR AT505
Repetitive voltage up to 1600 V
Mean on-state current 430 A
Surge current 5.6 kA
FINAL SPECIFICATION
gen 03 - ISSUE : 05
Symbol Characteristic Conditions
Tj
[°C]
Value Unit
BLOCKING
V RRM Repetitive peak reverse voltage 125 1600 V
V
RSM Non-repetitive peak reverse voltage 125 1700 V
V
DRM Repetitive peak off-state voltage 125 1600 V
I
RRM Repetitive peak reverse current V=VRRM 125 30 mA
I
DRM Repetitive peak off-state current V=VDRM 125 30 mA
CONDUCTING
I T (AV) Mean on-state current 180° sin, 50 Hz, Th=55°C, double side cooled 430 A
I
T (AV) Mean on-state current 180° sin, 50 Hz, Tc=85°C, double side cooled 340 A
I
TSM Surge on-state current sine wave, 10 ms 125 5.6 kA
I² t I² t without reverse voltage 157 x1E3 A²s
V
T On-state voltage On-state current = 800 A 25 1.55 V
V
T(TO) Threshold voltage 125 1.0 V
r
T On-state slope resistance 125 0.680 mohm
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 450 A, gate 10V 5ohm 125 200 A/µs
dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs
td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs 25 1.6 µs
tq Circuit commutated turn-off time, typical dV/dt = 20 V/µs linear up to 75% VDRM 200 µs
Q rr Reverse recovery charge di/dt=-20 A/µs, I= 290 A 125 µC
I rr Peak reverse recovery current VR= 50 V A
I
H Holding current, typical VD=5V, gate open circuit 25 300 mA
I
L Latching current, typical VD=5V, tp=30µs 25 700 mA
GATE
V GT Gate trigger voltage VD=5V 25 3.5 V
I
GT Gate trigger current VD=5V 25 200 mA
V
GD Non-trigger gate voltage, min. VD=VDRM 125 0.25 V
V
FGM Peak gate voltage (forward) 20 V
I
FGM Peak gate current 8A
V
RGM Peak gate voltage (reverse) 5V
P
GM Peak gate power dissipation Pulse width 100 µs 75 W
P
G Average gate power dissipation 1 W
MOUNTING
R th(j-h) Thermal impedance, DC Junction to heatsink, double side cooled 95 °C/kW
R
th(c-h) Thermal impedance Case to heatsink, double side cooled 20 °C/kW
j Operating junction temperature -30 / 125 °C
T
F Mounting force 4.9 / 5.9 kN
Mass 55 g
ORDERING INFORMATION : AT505 S 16
standard specification
VDRM&VRRM/100
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AT505 PHASE CONTROL THYRISTOR
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FINAL SPECIFICATION gen 03 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Th [°C]
130
120
110
100
90
OSEIC
OSEICO SPA
Ower SEmiconductors Italian COrporation
80
70
60
50
F(AV) [W]
P
800
700
600
500
400
30°
60°
90°
120°
180°
DC
0 100 200 300 400 500 600
I
F(AV) [A]
DC
180°
30°
60°
90°
120°
300
200
100
0
0 100 200 300 400 500 600
F(AV) [A]
I
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AT505 PHASE CONTROL THYRISTOR
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FINAL SPECIFICATION gen 03 - ISSUE : 05
DISSIPATION CHARACTERISTICS
SINE WAVE
Th [°C]
130
120
110
100
90
30°
80
70
60
50
0 100 200 300 400 500 600
60°
90°
120°
180°
OSEIC
OSEICO SPA
Ower SEmiconductors Italian COrporation
P
F(AV) [W]
800
700
600
500
400
300
200
100
F(AV) [A]
I
180°
120°
90°
60°
30°
0
0 100 200 300 400 500 600
I
F(AV) [A]
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AT505 PHASE CONTROL THYRISTOR
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FINAL SPECIFICATION gen 03 - ISSUE : 05
OSEICO
OSEICO SPA
Ower SEmiconductors Italian COrporation
ON-STATE CHARACTERISTIC
Tj = 125 °C
1400
1200
1000
800
600
On-state Current [A]
400
200
0
0.6 1.1 1.6
On-state Voltage [V]
SURGE CHARACTERISTIC
Tj = 125 °C
6
5
4
3
ITSM [kA]
2
1
0
1 10 100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
100.0
90.0
80.0
70.0
60.0
50.0
40.0
Zth j-h [°C/kW]
30.0
20.0
10.0
0.0
0.001 0.01 0.1 1 10 100
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
ll the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO S.p.A reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by
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