– 25 mA Active Current
–50 µA CMOS Standby Current
• Typical 10,000 Write Cycles
AT49(H)BV/(H)LV01
1-Megabit
(128K x 8)
Description
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memories organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 90 mW over the commercial temperature range. When the devices are
deselected, the CMOS standby current is less than 50 µA.
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not
require high input voltages for programming. Three-volt-only comm ands determine
the read and programming operation o f th e dev ic e. Re adi ng da ta out of the de vi ce i s
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is
performed by erasing the entire 1 megabit of memory and then programming on a
byte by byte basis. The typical byte programming time is a fast 30 µs. The end of a
program cycle can be op tional ly detec ted by th e DATA
polling feature. On ce the e nd
of a byte progr am cycl e has be en dete cted, a new acce ss for a read or pr ogram can
begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
(continued)
Pin Configurations
Pin NameFunction
A0 - A16Addresses
CE
OE
WEWrite Enable
Chip Enable
Output En able
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV010
AT49HBV010
AT49LV010
AT49HLV010
™
I/O0 - I/O7Data Inputs/Outputs
NCNo Connect
PLCC Top View
A12
A15
A16NCVCCWEA17
432
1
323130
14151617181920
I/O1
I/O2
I/O3
I/O4
I/O5
GND
29
28
27
26
25
24
23
22
21
I/O6
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O0
5
A7
6
A6
7
A5
8
A4
9
A3
10
A2
11
A1
12
A0
13
A11
A13
A14
WE
VCC
A16
A15
A12
TSOP Top View
Type 1
1
2
A9
3
A8
4
5
6
NC
7
8
9
NC
10
11
12
13
A7
14
A6
15
A5
16
A4
OE
32
A10
31
CE
30
I/O7
29
I/O6
28
I/O5
27
I/O4
26
I/O3
25
GND
24
I/O2
23
I/O1
22
I/O0
21
A0
20
A1
19
A2
18
A3
17
0677B-A–9/97
1
Page 2
The optional 8K bytes boot block section includes a reprogramming write lock out feature to provide data integrity.
The boot sector is desig ned to contai n user secure code,
Block Diagram
VCC
GND
and when the featur e is en abled , the b oot s ector i s perma nently protected from being reprogrammed.
DATA INPUTS/OUTPUTS
I/O0 - I/O7
OE
WE
CE
ADDRESS
INPUTS
OE, CE AND WE
LOGIC
Y DECODER
X DECODER
Device Operation
READ:
EPROM. When CE
data stored at the memory location determined by the
address pins is asserted on the outputs. The outputs are
put in the high impedance state whenever CE
high. This dual-line control gives designers flexibility in preventing bus contention.
ERASURE:
bytes memory array (or 120K bytes if the boot block featured is used ) must be era sed. The eras ed state of the
memory bits is a logical “1”. The entire device can be
erased at one time by us ing a 6-byte s oftware code. T he
software chi p erase code c onsists of 6-b yte load co mmands to specific address locations with a specific data
pattern (please refer to the Chip Erase Cycle Waveforms).
After the software chip erase has been ini tiated , the devi ce
will internally time the eras e operatio n so that no ex ternal
clocks are required . The ma ximum tim e needed to erase
the whole chip is t
been enabled, the data in the boot sector will not be
erased.
BYTE PROGRAMMING:
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed ba ck to a “1 ”; only er ase op eratio ns can co nvert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle operation (please refer t o the Com mand Definitions tabl e). The
device will automatically generate the required internal program pulses.
The program cycle has addresses latched on the falling
edge of WE
latched on the rising edge of WE
first. Programming is comp leted after the specifie d t
cycle time. The DATA polling fe ature ma y also be us ed to
indicate the end of a program cycle.
The AT49(H)BV/(H)LV010 is accessed like an
and OE are low an d WE is high, the
or OE is
Before a byte can be reprogrammed, the 128K
. If the boot block lockout feature has
EC
Once the memory array is
or CE, whichever occurs last, and the data
or CE, whichever occurs
BP
DATA LATCH
INPUT/OUTPUT
BUFFERS
Y-GATING
MAIN MEMORY
(120K BYTES)
OPTIONAL BOOT
BLOCK (8K BYTES)
BOOT BLOCK PROGRAMMING LOCKOUT:
01FFF
00000
The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the fe ature has be en enable d. The
size of the block is 8 K bytes. Thi s block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This fe ature do es not have to be activated; the boot block’ s u sa ge a s a write protected region is
optional to the user. The address range of the boot block is
00000H to 01FFFH.
Once the feature is enabl ed, the da ta in the bo ot block c an
no longer be erased or programmed. Data i n the main
memory block can still be changed through the regular programming method. To activate the lockout feature, a series
of six program commands to spec ific addresses wi th specific data must be performed. Please refer to the Command Definitions table.
BOOT BLOC K LOCKOUT DET ECTION:
A software
method is available to determine if programming of the boot
block section is l ocked out. W hen the device is in the sof tware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H wil l s how i f pr ogram mi ng the b oot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be
programmed. The software product i dentification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION:
The product identif ication
mode identifies the device and manufac turer as Atmel. It
may be accessed by hardwar e or softwar e operatio n. The
hardware operation mode can be used by an external programmer to identify the correct programming algorithm for
the Atmel product.
2
AT49(H)BV/(H)LV010
Page 3
AT49(H)BV/(H)LV010
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING:
polling to indicate the end of a program cycle. Dur-
DATA
The AT49(H)BV/(H)LV010 features
ing a program cycle an attem pted read o f the last by te
loaded will result in the complement of the loaded data on
I/O7. Once the program cycle has been completed, true
data is valid on all outputs and the next cycle may begin.
polling may begin at any time during the pr ogram
DATA
cycle.
TOGGLE BIT:
In addition to DATA
polling the
AT49(H)BV/(H)LV 010 prov ides a nother meth od for determining the en d of a prog ram or e ras e cy cle . D uring a p rogram or erase operation, successive attempts to read data
from the device will result in I/O6 toggling between one and
zero. Once the program cycle has completed, I/O6 will
stop toggling and valid data will be read. Exam ining the
toggle bit may begin at any time during a program cycle.
HARDWARE DATA PROTECTI ON:
Hardware features
protect against inadvertent programs to the
AT49(H)BV/(H)LV010 in the following ways : (a) V
sense: if VCC is below 1.8V (typical), the program function
is inhibited. (b) P r ogram inhibit: holding an y o ne o f O E
high or WE high inhibits program cycles. (c) Noise filter:
CE
Pulses of le ss than 15 ns (ty pic al) on the WE
or CE inputs
will not initiate a program cycle.
INPUT LEVELS:
While operating with a 2.7V to 3.6V
power supply, th e address inp uts and con trol inputs (OE
and WE) may be driven from 0 to 5.5V without
CE
adversely affecting the operation of the devic e. The I/O
lines can only be driven from 0 to V
Notes: 1. The 8K byte boot sector has the address range 00000H to 01FFFH.
(1)
(2)
(2)
2. Either one of the Product ID exit commands can be used.
45555AA2AAA555555A0AddrD
65555AA2AAA555555805555AA2AAA55555540
35555AA2AAA55555590
35555AA2AAA555555F0
1XXXXF0
Absolute Maximum Ratings*
Temperature Under Bias......................-55°C to +125°C
Storage Temperature........ ...... ....... ...... .-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground.........................-0.6V to +6.25V
All Output Voltages
with Respect to Ground...................-0.6V to V
+ 0.6V
CC
*NOTICE:Stresses beyond those listed under “Absolute
IN
Maximum Ratings” may cause permanent damage to the dev ice . This is a stress ra ting onl y and
functional oper ati on of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions f or exten ded periods may af fect de vice
reliability.
Voltage on OE
with Respect to Ground.........................-0.6V to +13.5V
Address to Output Delay557090120150ns
CE to Output Delay557090120150ns
OE to Output Delay30354050070ns
CE or OE to Output
Float
Output Hold from OE,
CE or Address,
whichever occurred first
AC Read Waveforms
ADDRESS
OUTPUT
AT49HLV
MinMaxMinMaxMinMaxMinMaxMinMax
025025025030040 ns
00000 ns
(1)(2)(3)(4)
CE
OE
010-55
AT49HBV/
HLV010-70
ADDRESS VALID
tCE
tACC
HIGH Z
AT49HBV/
HLV010-90
tOH
OUTPUT VALID
AT49BV/
LV010-12
AT49BV010-
15
UnitsSymbolParameter
tDF
Notes: 1. CE may be delayed up to t
may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by t
2. OE
without impace on t
ACC
- tCE after the address transition without impact on t
ACC
.
3. tDF is specified from OE or CE whichever occurs frist (CL - 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
AC
DRIVING
LEVELS
t
tF < 5 ns
R
Pin Capacitance
C
IN
C
OUT
Note:1. This parameter is characterized and is not 100% tested.
2.4V
0.4V
AC
1.5V
MEASUREMENT
LEVEL
(f = 1 MHz, T = 25°C)
TypMaxUnitsConditions
46pFV
812pFV
(1)
ACC
Output Test Load
55/70 ns
3.0V
1.8K
OUTPUT
PIN
1.3K
30 pF
.
ACC
90/120/150 ns
3.0V
1.8K
1.3K
- tOE after an address change
OUTPUT
PIN
100 pF
= 0V
IN
= 0V
OUT
5
Page 6
AC Byte Load Characteristics
SymbolParameterMinMaxUnits
t
, t
AS
OES
t
AH
t
CS
t
CH
t
WP
t
DS
t
, t
DH
OEH
t
WPH
Address, OE Set-up Time0ns
Address Hold Time100ns
Chip Select Set-up Time0ns
Chip Select Hold Time0ns
Write Pulse Width (WE or CE)200ns
Data Set-up Time100ns
Data, OE Hold Time0ns
Write Pulse Width High200ns
AC Byte Load Waveforms
WE Controlled
OE
CE Controlled
ADDRESS
CE
WE
DATA IN
OE
ADDRESS
WE
tAS
tCS
tAS
tOES
tOES
tAH
tWPtWPH
tDStDH
tAH
tOEH
tCH
tOEH
tCH
tCS
CE
tWPtWPH
tDStDH
DATA IN
6
AT49(H)BV/(H)LV010
Page 7
AT49(H)BV/(H)LV010
Program Cyc le Characteristics
SymbolParameterMinTypMaxUnits
t
BP
t
AS
t
AH
t
DS
t
DH
t
WP
t
WPH
t
EC
Byte Programming Time30µs
Address Set-up Time0ns
Address Hold Time100ns
Data Set-up Time100ns
Data Hold Time0ns
Write Pulse Width 200ns
Write Pulse Width High200ns
Erase Cycle Time10seconds
Program Cycle Waveforms
OE
CE
tWP
WE
tAS
tAH
PROGRAM CYCLE
tWPH
tDH
tBP
A0-A16
55552AAA5555
tDS
DATA
AA55A0
Chip Erase Cycle Waveforms
OE
CE
tWP
WE
tAH
tDS
AA5580
BYTE 0BYTE 1BYTE 2BYTE 3BYTE 4BYTE 5
A0-A16
DATA
tAS
55552AAA5555
tWPH
tDH
ADDRESS
INPUT
DATA
55552AAA5555
AA5510
tEC
Note:OE must be high only when WE and CE are both low.
7
Page 8
Data Po lling Characteristics
(1)
SymbolParameterMinTypMaxUnits
t
DH
t
OEH
t
OE
t
WR
Data Hold Time0ns
OE Hold Time10ns
OE to Output Delay
(2)
Write Recovery Time0ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Data Polling Waveforms
WE
CE
tOEH
OE
tDH
I/O7
tOE
tWR
ns
A0-A17
Toggle Bit Characteristics
(1)
An
AnAnAnAn
SymbolParameterMinTypMaxUnits
t
DH
t
OEH
t
OE
t
OEHP
t
WR
Data Hold Time0ns
OE Hold Time10ns
OE to Output Delay
(2)
ns
OE High Pulse150ns
Write Recovery Time0ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See t
Toggle Bit Waveforms
spec in AC Read Characteristics.
OE
(1)(2)(3)
WE
CE
tOEH
OE
tDH
I/O6
tOEHP
tOE
tWR
HIGH Z
Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The t
input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
8
AT49(H)BV/(H)LV010
specification must be met by the toggling
OEHP
Page 9
AT49(H)BV/(H)LV010
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 40
TO
ADDRESS 5555
PAUSE 1 second
(2)
Software Product
Identification Entry
LOAD DATA AA
ADDRESS 5555
LOAD DATA 55
ADDRESS 2AAA
LOAD DATA 90
ADDRESS 5555
ENTER PRODUCT
IDENTIFICATION
MODE
Software Product
Identification Exit
(1)
(1)
TO
TO
TO
(2)(3)(5)
Boot Block Lockout Feature
(1)
Enable Algorithm
LOAD DATA AA
TO
ADDRESS 5555
Notes: 1.Data Format: I/O7 - I/O0 (Hex);
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA F0
TO
ADDRESS 5555
EXIT PRODUCT
IDENTIFICATION
MODE
(4)
Address Format: A14 - A0 (Hex).
2. A1 - A16 = V
OR
.
IL
Manufacture Code is read for A0 = V
Device Code is read for A0 = V
3. The device does note remain in identification mode
if powered down.
4. The device returns to standard operation mode.
5. Manufacturers Code: 1FH
Device Code: 17H.
LOAD DATA F0
TO
ANY ADDRESS
EXIT PRODUCT
IDENTIFICATION
MODE
IH
(4)
IL
.
Notes: 1.Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Boot block lockout feature enabled.
;
9
Page 10
Ordering Information
I
(mA)
t
ACC
(ns)
70250.05AT49HBV010-70JC
90250.05AT49HBV010-90JC
120250.05AT49BV010-12JC
150250.05AT49BV010-15JC
Note:1. The 49(H)BV/(H)LV010 has as optional boot block feature. The part number shown in the Ordering Information table is for
devices with the boot block in the lower address range (i.e., 00000H to 01FFFH). Users requiring the boot block to be in the
higher address range should contact Atmel.