Datasheet AT49HF010-90TI, AT49HF010-90TC, AT49HF010-90PI, AT49HF010-45JC, AT49HF010-12TI Datasheet (ATMEL)

...
Page 1
AT49F010/HF010
1-Megabit (128K x 8) 5-volt Only CMOS Flash Memory
AT49F010 AT49HF010
Single Voltage Operation
- 5V Read
- 5V Reprogramming
Fast Read Access Time - 45 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seco nd s
Byte By Byte Programming - 10 µs/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
- 30 mA Active Current
- 100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Pin Configurations
Pin Name Function
A0 - A16 Addresses CE Chip Enable OE Output Enable WE Write Enable I/O0 - I/O7 Data Inputs/Outputs NC No Connect
The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu­factured with Atmel’s advanced nonvolatile CMOS technology, the devices offer ac­cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re­quire high input voltages for programming. Five-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per­formed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The byte programming time is a fast 50 µs. The end of a program cycle can be optionally detected by the
DATA polling feature. Once the end of a byte pro-
Description
(continued)
DIP Top View
TSOP Top View
Type 1
PLCC Top View
0852AX–5/97
Page 2
Device Operation
READ:
The AT49 F010/HF010 is accessed lik e an
EPROM. When
CE and OE are low and WE is high, the data stored at the memory location determined by the ad­dress pins is asserted on the outputs. The outputs are put in the high impedance state whenever
CE or OE is high. This dual-line control gives designers flexibility in prevent­ing bus contention.
ERASURE:
Before a byte can be reprogrammed, the 128K bytes memory array (or 120K bytes if the boot block featured is used) must be erased. The erased state of the memory bits is a logical “1". The entire device can be erased at one time by using a 6-byte software code. The chip erase code consists of 6-byte load commands to spe­cific address locations with a specific data pattern (please refer to the Chip Erase Cycle Waveforms).
After the chip erase has been initiated, the device will in­ternally time the erase operation so that no external clocks are required. The maximum time needed to erase the whole chip is t
EC
. If the bo ot block lockout feat ure has been enable d, the data in the boot sector will not be erased.
BYTE PROGRAMMING:
Once the memory array is erased, the device is programmed (to a logical “0") on a byte-by-byte basis. Please note that a data ”0" cannot be programmed back to a “1"; only erase operations can con­vert ”0"s to “1"s. Programming is accomplished via the in­ternal device command register and is a 4 bus cycle op­eration (please refer to the Command Definitions table). The device will automatically generate the required inter­nal program pulses.
The program cycle has addresses latched on the falling edge of
WE or CE, whichever occurs last, and the data
latched on the rising edge of
WE or CE, whichever occurs
first. Programming is completed after the specified t
BP
cy-
Block Diagram
gram cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a repro­gramming write lock out feature to provide data integrity. The boot sector is designed to contain user s ecure code,
cle time. The
DATA polling feature may also be used to
indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT:
The de­vice has one designated block that has a programming lockout fea ture. This feature prev ents programming of data in the designated block once the featur e has been enabled. The size of the block is 8K bytes. This block, re­ferred to as the boot block, can contain secure code that is used to bring up the system. Enabling the lockout fea­ture will allow the boot code to stay in the device while data in the rest of the device is updated. This feature does not have to be activated; the boot block’s usage as a write protected region is optional to the user. The address range of the boot block is 00000H to 01FFFH.
Once the feature is enabled, the data in the boot block can no longer be erased or programmed. Data in the main memory block can still be changed through the regular programming method. To activate the lockout feature, a series of six program commands to specific addresses with specific data must be performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION:
A software method is available to determine if programming of the boot block section is locked out. When the device is in the software product identification mode (see Software Prod­uct Identification Entry and Exit sections) a read from ad­dress location 00002H will show if programming the boot block is locked out. If the data on I/O0 is low, the boot block can be programmed; if the data on I/O0 is high, the program lockout feature has been activated and the block cannot be programmed. The software product identifica­tion code should be used to return to standard operation.
2
AT49F010/HF010
Page 3
Temperature Under Bias.................-55°C to +125°C
Storage Temperature......................-65°C to +150°C
All Input Voltages (including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or an y ot he r con di t i on s be yo nd those indi­cated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings*
PRODUCT IDENTIFICATION:
The product identification mode identifies the device and manufacturer as A tmel. It may be accessed by hardware or software operation. The hardware operation mode can be used by an external pro­grammer to identify the correct programming algorithm for the Atmel product.
For details, see Operating Modes (for hardware operation) or Software Product Identification. The manufacturer and device code is the same for both modes.
DATA POLLING:
The AT49F010/HF010 features
DATA polling to indicate the end of a program cycle. During a program cycle an attempted read of the last byte loaded will result in the complement of the loaded data on I/O7. Once the program cycle has been completed, true data is valid on all outputs and the next cycle may begin.
DATA polling may begin at any time during the program cycle.
Command Definition (in Hex)
Command Sequence
Bus
Cycles
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read
1AddrD
OUT
Chip Erase
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
Byte Program
4 5555 AA 2AAA 55 5555 A0 Addr D
IN
Boot Block Lockout
(1)
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID Entry
3 5555 AA 2AAA 55 5555 90
Product ID Exit
(2)
3 5555 AA 2AAA 55 5555 F0
Product ID Exit
(2)
1 XXXX F0
Notes: 1. The 8K byte boot sector has the address range 00000H to 01FFFH.
2. Either one of the Product ID exit commands can be used.
TOGGLE BIT:
In addition to
DATA polling the AT49F010/HF010 provides another method for determin­ing the end of a program or erase cycle. During a program or erase operation, successive attempts to read data from the device will result in I/O6 tog gling between one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be read. Examining the toggle bit may begin at any time during a program cycle.
HARDWARE DATA PROTECTION:
Hardware features protect against inadvertent programs to the AT49F010/HF010 in the following ways: (a) V
CC
sense: if
V
CC
is below 3.8V (typical), the program function is inhib-
ited. (b) Program inhibit: holding any one of
OE low, CE
high or
WE high inhibits program cycles. (c) Noise filter:
Pulses of less than 15 ns (typical) on the
WE or CE inputs
will not initiate a program cycle.
AT49F010/HF010
3
Page 4
Operating Modes
Mode
CE OE WE
Ai I/O
Read V
IL
V
IL
V
IH
Ai D
OUT
Program
(2)
V
IL
V
IH
V
IL
Ai D
IN
Standby/Write Inhibit V
IH
X
(1)
X X High Z
Program Inhibit X X V
IH
Program Inhibit X V
IL
X
Output Disable X V
IH
X High Z
Product Identification
Hardware V
IL
V
IL
V
IH
A1 - A16 = VIL, A9 = VH,
(3)
A0 = V
IL
Manufacturer Code
(4)
A1 - A16 = VIL, A9 = VH,
(3)
A0 = V
IH
Device Code
(4)
Software
(5)
A0 = VIL, A1 - A16 = V
IL
Manufacturer Code
(4)
A0 = VIH, A1 - A16 = V
IL
Device Code
(4)
4. Manufacturer Code: 1FH, Device Code: 17H
5. See details unde r Soft ware Produ ct Ide nt if icat io n Ent ry/ Exit.
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. V
H
= 12.0V ± 0.5V.
DC Characteristics
Symbol Parameter Condition Min Max Units
I
LI
Input Load Current VIN = 0V to V
CC
10
µ
A
I
LO
Output Leakage Current V
I/O
= 0V to V
CC
10
µ
A
I
SB1
VCC Standby Current CMOS CE = V
CC
- 0.3V to V
CC
Com. 100
µ
A
Ind. 300
µ
A
I
SB2
VCC Standby Current TTL CE = 2.0V to V
CC
3mA
I
CC
(1)
V
CC
Active Current f = 5 MHz; I
OUT
= 0 mA
Com. 30 mA Ind. 40 mA
V
IL
Input Low Voltage 0.8 V
V
IH
Input High Voltage 2.0 V
V
OL
Output Low Voltage IOL = 2.1 mA .45 V
V
OH1
Output High Voltage IOH = -400 µA2.4V
V
OH2
Output High Voltage CMOS IOH = -100 µA; VCC = 4.5V 4.2 V
Note: 1. In the erase mode, ICC is 90 mA.
DC and AC Operating Range
AT49HF010-45 AT49HF010-55 AT49F010-70 AT49F010-90 AT49F010-12
Operating Temperature (Case)
Com. 0°C - 70°C0
°
C - 70°C0
°
C - 70°C0
°
C - 70°C0
°
C - 70°C
Ind. -40°C - 85°C-40
°
C - 85°C-40
°
C - 85°C-40
°
C - 85°C-40
°
C - 85°C
V
CC
Power Supply 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10%
4
AT49F010/HF010
Page 5
AC Read Characteristics
AT49HF010-45 AT49HF010-55 AT49F010-70 AT49F010-90 AT49F010-12
Symbol Parameter
Min Max Min Max Min Max Min Max Min Max
Units
t
ACC
Address to Output Delay 45 55 70 90 120 ns
t
CE
(1)
CE to Output Delay 45 55 70 90 120 ns
tOE
(2)
OE to Output Delay 25 30 35 0 40 0 50 ns
t
DF
(3, 4)
CE or OE to Output Float025025025025030ns
t
OH
Output Hold from OE, CE or Address, whichever occurred first
00000ns
70/90/120 ns
Notes: 1. CE may be delayed up to t
ACC
- tCE after the address
transition without impact on t
ACC
.
2.
OE may be delayed up to tCE - tOE after the falling edge of
CE without impact on tCE or by t
ACC
- tOE
after an address change without impact on t
ACC
.
3. t
DF
is specified from OE or CE whichever occurs first
(C
L
= 5 pF).
4. This parameter is characterized and is not 100% tested.
AC Read Waveforms
(1, 2, 3, 4)
tR, tF < 5 ns
Input Test Waveforms and Measurement Level
Output Test Load
45 ns / 55 ns
Pin Capacitance
(f = 1 MHz, T = 25°C)
(1)
Typ Max Units Conditions
C
IN
46pFV
IN
= 0V
C
OUT
812pFV
OUT
= 0V
Note: 1. This parameter is characterized and is not 100% tested.
AT49F010/HF010
5
Page 6
AC Byte Load Characteristics
Symbol Parameter Min Max Units
t
AS
, t
OES
Address, OE Set-up Time 0 ns
t
AH
Address Hold Time 50 ns
t
CS
Chip Select Set-up Time 0 ns
t
CH
Chip Select Hold Time 0 ns
t
WP
Write Pulse Width (WE or CE) 90 ns
t
DS
Data Set-up Time 50 ns
t
DH
, t
OEH
Data, OE Hold Time 0 ns
t
WPH
Write Pulse Width High 90 ns
AC Byte Load Waveforms
WE Controlled
CE Controlled
6
AT49F010/HF010
Page 7
Program Cycle Characteristics
Symbol Parameter Min Typ Max Units
t
BP
Byte Programming Time 10 50
µ
s
t
AS
Address Set-up Time 0 ns
t
AH
Address Hold Time 50 ns
t
DS
Data Set-up Time 50 ns
t
DH
Data Hold Time 0 ns
t
WP
Write Pulse Width 90 ns
t
WPH
Write Pulse Width High 90 ns
t
EC
Erase Cycle Time 10 seconds
Program Cycle Waveforms
Chip Erase Cycle Waveforms
Note: OE must be high only when WE and CE are both low.
AT49F010/HF010
7
Page 8
Toggle Bit Characteristics
(1)
Symbol Parameter Min Typ Max Units
t
DH
Data Hold Time 10 ns
t
OEH
OE Hold Time 10 ns
t
OE
OE to Output Delay
(2)
ns
t
OEHP
OE High Pulse 150 ns
t
WR
Write Recovery Time 0 ns
Notes: 1. These paramet ers are ch ara ct eri ze d and not 100% tested.
2. See t
OE
spec in AC Read Charact eri st ic s.
Data Polling Characteristics
(1)
Symbol Parameter Min Typ Max Units
t
DH
Data Hold Time 10 ns
t
OEH
OE Hold Time 10 ns
t
OE
OE to Output Delay
(2)
ns
t
WR
Write Recovery Time 0 ns
Notes: 1. These paramet ers are ch ara ct eri ze d and not 100% tested.
2. See t
OE
spec in AC Read Charact eri st ic s.
Data Polling Waveforms
Toggle Bit Waveforms
(1, 2, 3)
Notes: 1. Toggling either OE or CE or both OE and CE will
operate toggle bit. The t
OEHP
specificatio n mu st be
met by the toggling input(s).
2. B eginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
8
AT49F010/HF010
Page 9
ENTER PRODUCT
IDENTIFICATION
MODE
(2, 3, 5)
LOAD DATA 90
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA AA
TO
ADDRESS 5555
Software Product Identification Entry
(1)
LOAD DATA F0
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA AA
TO
ADDRESS 5555
Software Product Identification Exit
(1)
EXIT PRODUCT
IDENTIFICATION
MODE
(4)
LOAD DATA F0
TO
ANY ADDRESS
EXIT PRODUCT
IDENTIFICATION
MODE
(4)
OR
Notes for software product identification:
1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex).
2. A1 - A16 = V
IL
.
Manufacture Code is read for A0 = V
IL
;
Device Code is read for A0 = V
IH
.
3. The device does not remain in identification mode if powered down.
4. The device returns to standard operation mode.
5. Manufacturer Code: 1FH Device Code: 17H
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
Boot Block Lockout Feature Enable Algorithm
(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA AA
TO
ADDRESS 5555
PAUSE 1 second
(2)
LOAD DATA 40
TO
ADDRESS 5555
Notes for boot block lockout feature enable:
1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex).
2. Boot block lockout feature enabled.
AT49F010/HF010
9
Page 10
Ordering Information
(1)
t
ACC
(ns)
I
CC
(mA)
Ordering Code Package Operation Range
Active Standby
45 30 0.1 AT49HF010-45JC 32J Commercial
AT49HF010-45PC 32P6 (0° to 70°C) AT49HF010-45TC 32T
40 0.1 AT49HF010-45JI 32J Industrial
AT49HF010-45PI 32P6 (-40° to 85°C) AT49HF010-45TI 32T
55 30 0.1 AT49HF010-55JC 32J Commercial
AT49HF010-55PC 32P6 (0° to 70°C) AT49HF010-55TC 32T
40 0.1 AT49HF010-55JI 32J Industrial
AT49HF010-55PI 32P6 (-40° to 85°C) AT49HF010-55TI 32T
70 30 0.1 AT49F010-70JC 32J Commercial
AT49F010-70PC 32P6 (0° to 70°C) AT49F010-70TC 32T
40 0.3 AT49F010-70JI 32J Industrial
AT49F010-70PI 32P6 (-40° to 85°C) AT49F010-70TI 32T
90 30 0.1 AT49F010-90JC 32J Commercial
AT49F010-90PC 32P6 (0° to 70°C) AT49F010-90TC 32T
40 0.3 AT49F010-90JI 32J Industrial
AT49F010-90PI 32P6 (-40° to 85°C) AT49F010-90TI 32T
120 30 0.1 AT49F010-12JC 32J Commercial
AT49F010-12PC 32P6 (0° to 70°C) AT49F010-12TC 32T
40 0.3 AT49F010-12JI 32J Industrial
AT49F010-12PI 32P6 (-40° to 85°C) AT49F010-12TI 32T
Note: 1. The AT49F010/HF010 has as optional boot block feature. The part number show n in the Ordering Information table is for
devices with the bo ot block in the lower addre ss rang e (i. e., 00000H to 01FFF H ). Use rs requiring the boot blo ck to be in the higher address rang e should contact Atme l.
Package Type
32J
32 Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6
32 Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
32T
32 Lead, Thin Small Outline Package (TSOP)
10
AT49F010/HF010
Loading...