Page 1
Up to 6 GHz Medium Power
Silicon Bipolar Transistor
Technical Data
AT-42086
Features
• High Output Power:
20.5 dBm Typical P
at 2.0␣ GHz
1 dB
• High Gain at 1 dB
Compression:
13.5 dB Typical
G
1 dB
at 2.0␣ GHz
• Low Noise Figure:
1.9 dB Typical
NFO at 2.0␣ GHz
• High Gain-Bandwidth
Product: 8.0 GHz Typical f
T
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
[1]
Description
Hewlett-Packard’s AT-42086 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42086 is housed in a low cost
surface mount .085" diameter
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconductor
Devices.”
plastic package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 20 emitter
finger interdigitated geometry
yields a medium sized transistor
with impedances that are easy to
match for low noise and medium
power applications. Applications
include use in wireless systems as
an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise
match near 50␣ Ω up to 1 GHz,
makes this device easy to use as a
low noise amplifier.
The AT-42086 bipolar transistor is
fabricated using Hewlett- Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
86 Plastic Package
Pin Connections
EMITTER
4
BASE
1
420
2
EMITTER
COLLECTOR
3
5965-8914E
4-174
Page 2
AT-42086 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
V
V
V
T
EBO
CBO
CEO
I
C
P
T
STG
T
j
Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 80
Power Dissipation
[2,3]
m W 500
Junction Temperature °C 150
Storage Temperature °C -65 to 150
[1]
Part Number Ordering Information
Part Number Increment Comments
AT-42086-BLK 100 Bulk
AT-42086-TR1 1000 Reel
Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
Thermal Resistance
[2,4]
θjc = 140°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 7.1 mW/°C for T
4. See MEASUREMENTS section
= 25° C.
CASE
> 80° C.
C
“Thermal Resistance” for more
information.
:
Electrical Specifications, T
= 25° C
A
Symbol Parameters and Test Conditions Units Min. Typ. Max.
|S
|2Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz dB 15.0 16.5
21E
f = 2.0 GHz 10.5
f = 4.0 GHz 4.5
P
1 dB
Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 20.5
VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.0
G
1 dB
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 13.5
f = 4.0 GHz 9.0
NF
Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 1.9
O
f = 4.0 GHz 3.5
G
A
Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.0
f = 4.0 GHz 9.0
f
T
h
FE
I
CBO
I
EBO
C
CB
Note:
1. For this test, the emitter is grounded.
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance
= 8 V µA 0.2
CB
= 1 V µA 2.0
EB
[1]
: VCB = 8 V , f = 1 MH z pF 0.32
4-175
Page 3
AT-42086 Typical Performance, T
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V
CE
= 8 V, IC = 35 mA.
GAIN (dB)
0.1 0.50.3 1.0 3.0 6.0
IC (mA)
Figure 1. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V
CE
= 8 V.
24
20
16
12
8
4
G
1 dB
(dB) P
1 dB
(dBm)
0 1020304050
P
1dB
G
1dB
2.0 GHz
2.0 GHz
4.0 GHz
4.0 GHz
40
35
30
25
20
15
10
5
0
MSG
MAG
|S
21E
|
2
IC (mA)
Figure 2. Insertion Power Gain vs.
Collector Current and Frequency.
V
CE
= 8 V.
20
16
12
8
4
0
|S
21E
|
2
GAIN (dB)
0 1020304050
1.0 GHz
2.0 GHz
4.0 GHz
FREQUENCY (GHz)
Figure 4. Noise Figure and Associated
Gain vs. Frequency.
V
CE
= 8 V, IC = 10mA.
GAIN (dB)
24
21
18
15
12
9
6
3
0
4
3
2
1
0
NF
O
(dB)
0.5 2.01.0 3.0 4.0 5.0
G
A
NF
O
= 25° C
A
4-176
Page 4
AT-42086 Typical Scattering Parameters,
Common Emitter, Z
Freq. S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .68 -48 28.0 25.12 153 -36.0 .016 65 .91 -15
0.5 .63 -141 20.9 11.07 102 -29.9 .032 42 .54 -30
1.0 .63 -176 15.4 5.87 80 -27.4 .043 43 .43 -30
1.5 .65 164 12.0 3.98 65 -26.0 .050 46 .40 -34
2.0 .66 151 9.5 2.99 53 -23.9 .064 52 .38 -40
2.5 .69 142 7.8 2.44 45 -23.1 .070 53 .36 -46
3.0 .71 132 6.2 2.04 34 -21.6 .084 54 .34 -54
3.5 .73 123 4.8 1.74 24 -19.7 .104 53 .33 -67
4.0 .75 115 3.6 1.51 14 -18.3 .122 51 .30 -80
4.5 .78 108 2.6 1.34 5 -17.2 .138 50 .31 -94
5.0 .80 101 1.6 1.20 -4 -16.0 .159 46 .31 -110
5.5 .82 95 0.6 1.08 -12 -14.8 .182 40 .32 -129
6.0 .85 89 -0.2 0.97 -21 -14.0 .200 35 .34 -148
= 50 Ω, TA=25°C, V
O
11
=8 V, IC␣=␣ 10 mA
CE
S
21
S
12
S
AT-42086 Typical Scattering Parameters,
Common Emitter, Z
Freq. S
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.1 .48 -94 32.8 43.62 137 -37.7 .013 65 .77 -25
0.5 .57 -168 22.4 13.21 92 -32.6 .023 57 .39 -28
1.0 .59 168 16.5 6.69 75 -28.7 .037 62 .33 -27
1.5 .61 154 13.0 4.48 62 -24.8 .057 64 .31 -31
2.0 .63 143 10.5 3.36 51 -23.0 .071 61 .29 -37
2.5 .68 137 8.7 2.72 43 -21.0 .089 56 .26 -45
3.0 .68 127 7.0 2.25 33 -19.7 .104 58 .25 -53
3.5 .71 118 5.7 1.92 24 -18.4 .121 55 .24 -65
4.0 .73 111 4.5 1.69 14 -17.3 .136 49 .20 -80
4.5 .76 104 3.5 1.49 5 -15.9 .161 46 .21 -95
5.0 .78 98 2.4 1.32 -3 -15.2 .174 43 .21 -115
5.5 .81 91 1.6 1.20 -12 -14.3 .193 36 .22 -136
6.0 .84 85 0.7 1.08 -20 -13.4 .213 31 .25 -156
A model for this device is available in the DEVICE MODELS section.
= 50 Ω, TA=25°C, V
O
11
=8 V, IC␣=␣ 35 mA
CE
S
21
S
12
S
22
22
AT-42086 Noise Parameters: V
Freq. NF
GHz dB
0.1 1.0 .04 8 0.13
0.5 1.1 .03 62 0.12
1.0 1.5 .06 168 0.12
2.0 1.9 .25 -146 0.12
4.0 3.5 .58 -100 0.52
O
Mag Ang
= 8 V, IC = 10 mA
CE
Γ
opt
4-177
RN/50
Page 5
86 Plastic Package Dimensions
0.51 ± 0.13
(0.020 ± 0.005)
4
1.52 ± 0.25
(0.060 ± 0.010)
0.66 ± 0.013
(0.026 ± 0.005)
0.30 MIN
(0.012 MIN)
45°
1
2
2.67 ± 0.38
(0.105 ± 0.15)
5° TYP.
2.16 ± 0.13
(0.085 ± 0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
C
L
3
2.34 ± 0.38
(0.092 ± 0.015)
0.203 ± 0.051
(0.006 ± 0.002)
8° MAX
0° MIN
4-178
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