Datasheet AT-42010 Datasheet (HP)

Up to 6 GHz Medium Power
Silicon Bipolar Transistor

Technical Data

AT-42010

Features

• High Output Power:

12.0 dBm Typical P

20.5 dBm Typical P

• High Gain at
1␣ dB␣ Compression:

14.0 dB Typical

9.5 dB Typical

• Low Noise Figure:

1.9 dB Typical

• High Gain-Bandwidth
Product: 8.0 GHz Typical f

• Hermetic Gold-ceramic
Microstrip Package

at 2.0␣ GHz

1 dB

at 4.0␣ GHz

1 dB

G

at 2.0␣ GHz

1 dB

G

at 4.0␣ GHz

1 dB

NFO at 2.0␣ GHz

T

Description

Hewlett-Packard’s AT-42010 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-42010 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-to­emitter pitch enables this transis­tor to be used in many different

functions. The 20 emitter finger
interdigitated geometry yields a
medium sized transistor with
impedances that are easy to match
for low noise and medium power
applications. This device is
designed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.
An optimum noise match near

50␣ Ω up to 1 GHz , makes this

device easy to use as a low noise
amplifier.

The AT-42010 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz f
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion­implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.

Self-Aligned-Transistor

T

100 mil Package

5965-8910E

4-154

AT-42010 Absolute Maximum Ratings

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

T

j

T

STG

Electrical Specifications, T

Symbol Parameters and Test Conditions

|S

|2Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 10.5 11.5

21E

Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 80
Power Dissipation

[2,3]

Junction Temperature °C 200
Storage Temperature °C -65 to 200

= 25° C

A

[1]

Absolute

m W 600

[1]

Thermal Resistance

θjc = 150°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. T

3. Derate at 6.7 mW/°C for

4. The small spot size of this tech-

= 25° C.

CASE

T

> 110°C.

C

nique results in a higher, though

more accurate determination of θ

than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.

Units Min. Typ. Max.

f = 4.0 GHz 5.5

P

1 dB

Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 21.0
VCE = 8 V, IC = 35 mA f= 4.0 GHz 20.5

G

1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 14.0

f = 4.0 GHz 9.5

NF

Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 1.9

O

f = 4.0 GHz 3.0

G

A

Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB 13.5

f = 4.0 GHz 10.0

f

h
I
I
C

T

FE

CBO

EBO

CB

Gain Bandwidth Product: VCE = 8 V, IC = 35 mA GHz 8.0

Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance

= 8 V µA 0.2

CB

= 1 V µA 2.0

EB

[1]

: VCB = 8 V , f = 1 MH z pF 0.28

[2,4]

:

jc

Notes:

1. For this test, the emitter is grounded.

4-155

AT-42010 Typical Performance, T

FREQUENCY (GHz)

Figure 4. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V

CE

= 8 V, IC = 35 mA.

GAIN (dB)

0.1 0.50.3 1.0 3.0 6.0

IC (mA)

Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V

CE

= 8 V.

24

20

16

12

8

4

G

1 dB

(dB) P

1 dB

(dBm)

0 1020304050

P

1dB

G

1dB

2.0 GHz

2.0 GHz

4.0 GHz

4.0 GHz

40
35
30
25
20
15
10

5
0

MSG

MAG

|S

21E

|

2

IC (mA)

Figure 1. Insertion Power Gain vs.
Collector Current and Frequency.
V

CE

= 8 V.

20

16

12

8

4

0

|S

21E

|

2

GAIN (dB)

0 1020304050

1.0 GHz

2.0 GHz

4.0 GHz

IC (mA)

Figure 3. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.

10 V

4 V

6 V

4 V

10 V

6 V

24
20
16
12

16
14
12
10

G

1 dB

(dB) P

1 dB

(dBm)

0 1020304050

P

1dB

G

1dB

FREQUENCY (GHz)

Figure 5. Noise Figure and Associated
Gain vs. Frequency.
V

CE

= 8 V, IC = 10mA.

GAIN (dB)

24
21
18
15
12

9
6
3
0

4
3
2
1
0

NF

O

(dB)

0.5 2.01.0 3.0 4.0 5.0

G

A

NF

O

= 25° C

A

4-156

AT-42010 Typical Scattering Parameters, Common Emitter,

Z

= 50 Ω, TA=25°C, V

O

Freq. S

=8 V, IC␣=␣ 10 mA

CE

11

S

21

S

12

S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 .74 -47 28.5 26.65 153 -36.4 .015 72 .91 -18

0.5 .65 -136 21.4 11.71 103 -29.4 .034 38 .51 -39

1.0 .63 -168 15.9 6.24 82 -27.2 .044 36 .40 -42

1.5 .63 174 12.6 4.26 69 -26.0 .050 42 .38 -45

2.0 .63 161 10.1 3.23 57 -24.6 .059 43 .38 -49

2.5 .64 154 8.4 2.64 51 -23.0 .070 52 .38 -51

3.0 .65 145 6.9 2.22 41 -22.0 .080 54 .37 -56

3.5 .66 136 5.8 1.94 31 -21.0 .090 51 .38 -65

4.0 .66 126 4.7 1.72 21 -19.7 .104 50 .39 -74

4.5 .66 115 3.8 1.55 11 -18.0 .126 45 .40 -82

5.0 .66 103 3.0 1.41 1 -17.3 .136 41 .40 -89

5.5 .68 90 2.1 1.28 -9 -16.1 .156 36 .40 -98

6.0 .72 81 1.3 1.16 -19 -15.4 .170 31 .37 -110

AT-42010 Typical Scattering Parameters,

Common Emitter, Z

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 .54 -90 33.3 45.97 138 -39.2 .011 54 .76 -29

0.5 .62 -163 22.8 13.83 94 -33.2 .022 52 .34 -40

1.0 .62 177 17.0 7.10 78 -28.8 .036 59 .30 -40

1.5 .62 166 13.6 4.82 67 -26.2 .049 61 .29 -42

2.0 .62 155 11.3 3.65 56 -23.8 .065 57 .29 -47

2.5 .63 150 9.5 2.99 51 -21.8 .081 62 .29 -50

3.0 .64 142 8.0 2.52 42 -21.0 .090 63 .30 -57

3.5 .65 133 6.8 2.19 32 -19.7 .103 59 .30 -67

4.0 .65 124 5.7 1.93 22 -18.4 .120 54 .31 -76

4.5 .65 113 4.7 1.72 13 -17.2 .138 49 .33 -85

5.0 .66 102 3.9 1.56 3 -16.6 .148 45 .34 -92

5.5 .69 91 3.0 1.41 -6 -15.6 .166 39 .33 -100

6.0 .73 83 2.1 1.27 -16 -14.9 .180 32 .30 -110

A model for this device is available in the DEVICE MODELS section.

= 50 Ω, TA=25°C, V

O

11

=8 V, IC␣=␣ 35 mA

CE

S

21

S

12

S

22

22

AT-42010 Noise Parameters: V

Freq. NF

GHz dB

0.1 1.0 .04 15 0.13

0.5 1.1 .05 76 0.12

1.0 1.5 .10 132 0.12

2.0 1.9 .23 -177 0.11

4.0 3.0 .45 -125 0.26

O

Mag Ang

= 8 V, IC = 10 mA

CE

Γ

opt

4-157

RN/50

100 mil Package Dimensions

.040

1.02
42EMITTER

.020
.508

BASE

1

.004 ± .002

.10 ± .05

.100

2.54

.495 ± .030

12.57 ± .76

COLLECTOR

EMITTER

3

Notes:
(unless otherwise specified)

1. Dimensions are

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.030

.76

in

mm

4-158