Datasheet AT-41435 Datasheet (HP)

Up to 6 GHz Low Noise
Silicon␣ Bipolar Transistor

Technical Data

AT-41435

Features

• Low Noise Figure:

1.7 dB Typical at 2.0␣ GHz

3.0 dB Typical at 4.0␣ GHz

• High Associated Gain:

14.0 dB Typical at 2.0␣ GHz

10.0 dB Typical at 4.0␣ GHz

• High Gain-Bandwidth

Product: 8.0 GHz Typical f

• Cost Effective Ceramic
Microstrip Package

T

Description

Hewlett-Packard’s AT-41435 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41435 is housed in a cost
effective surface mount 100 mil
micro-X package. The 4 micron
emitter-to-emitter pitch enables
this transistor to be used in many
different functions. The 14 emitter

finger interdigitated geometry
yields an intermediate sized
transistor with impedances that
are easy to match for low noise
and moderate power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise

match near 50 Ω at 1 GHz, makes

this device easy to use as a low
noise amplifier.

The AT-41435 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion­implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.

35 micro-X Package

5965-8925E

4-114

AT-41435 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

T

j

T

STG

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 5 mW/° C for T

4. Storage above +150° C may tarnish the leads of this package making it

5. The small spot size of this technique results in a higher, though more

= 25° C.

CASE

difficult to solder into a circuit. After a device has been soldered into a

circuit, it may be safely stored up to 200°C.

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 60
Power Dissipation

[2,3]

m W 500

Junction Temperature °C 200

Storage Temperature

> 100°C.

C

jc

[4]

than do alternate methods. See MEASURE-

°C -65 to 200

[1]

Thermal Resistance

θjc = 200°C/W

[2,5]

:

Electrical Specifications, T

= 25° C

A

Symbol Parameters and Test Conditions Units Min. Typ. Max.

|S

|2Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 11.5

21E

f = 4.0 GHz 6.0

P

1 dB

Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 19.0
VCE = 8 V, IC = 25 mA f = 4.0 GHz 18.5

G

1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0

f = 4.0 GHz 9.5

NF

Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.3

O

f = 2.0 GHz 1.7 2.0
f = 4.0 GHz 3.0

G

A

Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 18.5

f = 2.0 GHz 13.0 14.0
f = 4.0 GHz 10.0

f

T

h

FE

I

CBO

I

EBO

C

CB

Note:

1. For this test, the emitter is grounded.

Gain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0

Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance

= 8 V µA 0.2

CB

= 1 V µA 1.0

EB

[1]

: VCB = 8 V, f = 1 MHz pF 0.2

4-115

AT-41435 Typical Performance, T

FREQUENCY (GHz)

Figure 1. Noise Figure and Associated
Gain vs. Frequency.
V

CE

= 8 V, IC = 10mA.

GAIN (dB)

IC (mA)

Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.

GAIN (dB)

0 10203040

FREQUENCY (GHz)

Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
V

CE

= 8 V, IC = 25 mA.

GAIN (dB)

0.1 0.50.3 1.0 3.0 6.0

24
21
18
15
12

9
6
3
0

8
6
4
2
0

NF (dB)

4
3
2
1

NF

O

(dB)

0.5 2.01.0 3.0 4.0 5.0

16
15
14
13
12

G

A

NF

O

NF

50 Ω

IC (mA)

Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.
V

CE

= 8 V.

20

16

12

8

4

0

|S

21E

|

2

GAIN (dB)

0 10203040

2.0 GHz

4.0 GHz

40
35
30
25
20
15
10

5
0

MSG

MAG

|S

21E

|

2

1.0 GHz

10 V

4 V

G

A

NF

O

6 V

10 V

4 V
6 V

IC (mA)

Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V

CE

= 8 V.

24

20

16

12

8

4

G

1 dB

(dB) P

1 dB

(dBm)

0 10203040

P

1dB

G

1dB

2.0 GHz

2.0 GHz

4.0 GHz

4.0 GHz

Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V

CE

= 8 V.

IC (mA)

GAIN (dB)

0 10203040

6
4
2
0

NF

O

(dB)

16
14
12
10

8

G

A

NF

O

2.0 GHz

2.0 GHz

4.0 GHz

4.0 GHz

= 25° C

A

4-116

AT-41435 Typical Scattering Parameters,

Common Emitter, Z

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 .80 -32 28.0 24.99 157 -39.2 .011 82 .93 -12

0.5 .50 -110 21.8 12.30 108 -29.6 .033 52 .61 -28

1.0 .40 -152 16.6 6.73 85 -26.2 .049 56 .51 -30

1.5 .38 -176 13.3 4.63 71 -24.0 .063 59 .48 -32

2.0 .39 166 11.0 3.54 60 -21.9 .080 58 .46 -37

2.5 .41 156 9.3 2.91 53 -20.4 .095 61 .44 -40

3.0 .44 145 7.9 2.47 43 -18.8 .115 61 .43 -48

3.5 .46 137 6.7 2.15 33 -17.5 .133 58 .43 -58

4.0 .46 127 5.6 1.91 23 -16.0 .153 53 .45 -68

4.5 .47 116 4.7 1.72 13 -15.0 .178 50 .46 -75

5.0 .49 104 4.0 1.58 3 -13.9 .201 47 .48 -82

5.5 .52 91 3.3 1.45 -7 -13.0 .224 40 .47 -89

6.0 .59 81 2.5 1.34 -17 -12.1 .247 36 .43 -101

= 50 Ω, TA=25°C, V

O

11

=8 V, IC␣=␣ 10 mA

CE

S

21

S

12

S

AT-41435 Typical Scattering Parameters,

Common Emitter, Z

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 .63 -50 31.8 39.08 146 -40.0 .010 83 .84 -18

0.5 .39 -137 22.9 13.97 99 -31.4 .027 60 .50 -26

1.0 .36 -171 17.2 7.28 80 -27.1 .044 67 .45 -26

1.5 .36 171 13.9 4.94 68 -23.5 .067 66 .43 -30

2.0 .38 156 11.5 3.76 58 -21.6 .083 63 .41 -34

2.5 .40 149 9.8 3.08 52 -19.6 .105 63 .39 -38

3.0 .43 140 8.3 2.61 43 -18.3 .122 64 .38 -47

3.5 .45 132 7.2 2.28 33 -16.8 .144 59 .39 -57

4.0 .46 122 6.1 2.02 23 -15.6 .165 55 .40 -67

4.5 .46 112 5.2 1.82 14 -14.6 .185 50 .42 -75

5.0 .47 101 4.4 1.66 4 -13.7 .207 45 .43 -81

5.5 .51 89 3.7 1.54 -5 -12.6 .233 39 .42 -89

6.0 .58 79 3.0 1.41 -15 -11.8 .257 33 .37 -101

A model for this device is available in the DEVICE MODELS section.

= 50 Ω, TA=25°C, V

O

11

=8 V, IC␣=␣ 25 mA

CE

S

21

S

12

S

22

22

AT-41435 Noise Parameters: V

Freq. NF

GHz dB

0.1 1.2 .12 3 0.17

0.5 1.2 .10 14 0.17

1.0 1.3 .05 28 0.17

2.0 1.7 .30 -154 0.16

4.0 3.0 .54 -118 0.35

O

Mag Ang

= 8 V, IC = 10 mA

CE

Γ

opt

4-117

RN/50

35 micro-X Package Dimensions

4

.085

2.15

EMITTER

.083

2.11

DIA.

.057 ± .010

1.45 ± .25

.022

.56

BASE

13

2

.455 ± .030

11.54 ± .75

.100

2.54

COLLECTOR

016

EMITTER

.020
.508

Notes:
(unless otherwise specified)

1. Dimensions are

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.006 ± .002

.15 ± .05

in

mm

4-118