Datasheet AT-41410 Datasheet (HP)

Up to 6 GHz Low Noise
Silicon Bipolar Transistor

Technical Data

AT-41410

Features

• Low Noise Figure:

1.6 dB Typical at 2.0␣ GHz

3.0 dB Typical at 4.0␣ GHz

• High Associated Gain:

14.0 dB Typical at 2.0␣ GHz

10.0 dB Typical at 4.0␣ GHz

• High Gain-Bandwidth

Product: 8.0 GHz Typical f

• Hermetic, Gold-ceramic
Microstrip Package

T

Description

Hewlett-Packard’s AT-41410 is a
general purpose NPN bipolar
transistor that offers excellent
high frequency performance. The
AT-41410 is housed in a hermetic,
high reliability 100 mil ceramic
package. The 4 micron emitter-to­emitter pitch enables this transis­tor to be used in many different
functions. The 14 emitter finger

interdigitated geometry yields an
intermediate sized transistor with
impedances that are easy to match
for low noise and moderate power
applications. This device is de­signed for use in low noise,
wideband amplifier, mixer and
oscillator applications in the VHF,
UHF, and microwave frequencies.

An optimum noise match near 50␣ Ω

at 1 GHz , makes this device easy
to use as a low noise amplifier.

The AT-41410 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion­implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.

100 mil Package

5965-8923E

4-104

AT-41410 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

T

j

T

STG

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 5.9 mW/°C for T

4. The small spot size of this technique results in a higher, though more

= 25° C.

CASE

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

Emitter-Base Voltage V 1.5
Collector-Base Voltage V 20
Collector-Emitter Voltage V 12
Collector Current mA 60
Power Dissipation

[2,3]

m W 500

Junction Temperature °C 200
Storage Temperature °C -65 to 200

> 115°C.

C

than do alternate methods. See MEASURE-

jc

[1]

Thermal Resistance

θjc = 170°C/W

[2,4]

:

Electrical Specifications, T

= 25° C

A

Symbol Parameters and Test Conditions Units Min. Typ. Max.

|S

|2Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 12.0

21E

f = 4.0 GHz 6.5

P

1 dB

Power Output @ 1 dB Gain Compression f = 2.0 GHz dBm 19.0
VCE = 8 V, IC = 25 mA f= 4.0 GHz 18.5

G

1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz dB 14.0

f = 4.0 GHz 9.5

NF

Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 1.3

O

f = 2.0 GHz 1.6 1.9
f = 4.0 GHz 3.0

G

A

Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz dB 18.5

f = 2.0 GHz 13.0 14.0
f = 4.0 GHz 10.0

f

T

h

FE

I

CBO

I

EBO

C

CB

Notes:

1. For this test, the emitter is grounded.

Gain Bandwidth Product: VCE = 8 V, IC = 25 mA GHz 8.0

Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA — 30 150 270
Collector Cutoff Current; V
Emitter Cutoff Current; V
Collector Base Capacitance

= 8 V µA 0.2

CB

= 1 V µA 1.0

EB

[1]

: VCB = 8 V, f = 1 MHz pF 0.2

4-105

AT-41410 Typical Performance, T

24
21
18
15
12

9

GAIN (dB)

6
3
0

0.5 2.01.0 3.0 4.0 5.0

G

A

NF

50 Ω

FREQUENCY (GHz)

NF

O

Figure 1. Noise Figure and Associated
Gain vs. Frequency.

= 8 V, IC = 10mA.

V

CE

8
6
4
2
0

24

(dBm)

20

1 dB

16

12

(dB) P

NF (dB)

1 dB

G

Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. V

= 25° C

A

2.0 GHz

CE

4.0 GHz

2.0 GHz

4.0 GHz

= 8 V.

P

1dB

G

1dB

8

4

0 10203040

IC (mA)

16
15
14

G

A

13
12

GAIN (dB)

NF

O

0 10203040

IC (mA)

10 V
6 V

4 V

4 V
6 V
10 V

4
3
2
1

Figure 3. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Collector Voltage. f = 2.0 GHz.

(dB)

O

NF

16
14
12

G

A

10

8

GAIN (dB)

NF

O

0 10203040

I

(mA)

C

2.0 GHz

4.0 GHz

4.0 GHz

2.0 GHz

6
4
2
0

Figure 4. Optimum Noise Figure and
Associated Gain vs. Collector Current
and Frequency. V

CE

= 8 V.

40
35

(dB)

O

NF

30
25
20
15

GAIN (dB)

10

5
0

0.1 0.50.3 1.0 3.0 6.0
FREQUENCY (GHz)

MSG

2

|S

|

21E

Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.

= 8 V, IC = 25 mA.

V

CE

MAG

20

16

11

GAIN (dB)

2

|

8

21E

|S

4

0

0 10203040

IC (mA)

1.0 GHz

2.0 GHz

4.0 GHz

Figure 6. Insertion Power Gain vs.
Collector Current and Frequency.

= 8 V.

V

CE

4-106

AT-41410 Typical Scattering Parameters,

Common Emitter, Z

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 .61 -40 27.7 24.38 159 -40.0 .010 75 .94 -13

0.5 .60 -127 22.2 12.83 110 -30.4 .030 40 .62 -33

1.0 .60 -163 17.1 7.12 86 -28.2 .039 35 .50 -38

1.5 .60 179 13.8 4.89 71 -27.5 .042 45 .46 -42

2.0 .61 165 11.4 3.72 59 -26.0 .050 42 .45 -48

2.5 .61 157 9.7 3.04 52 -24.7 .058 46 .44 -52

3.0 .62 149 8.2 2.56 42 -23.9 .064 50 .44 -58

3.5 .63 140 7.0 2.23 31 -22.3 .077 48 .46 -68

4.0 .62 130 5.9 1.96 20 -21.3 .086 44 .48 -78

4.5 .61 120 4.9 1.76 10 -20.4 .095 41 .50 -85

5.0 .61 106 4.0 1.59 -1 -18.9 .113 38 .52 -91

5.5 .62 94 3.2 1.45 -11 -18.3 .121 33 .52 -97

6.0 .66 82 2.4 1.31 -22 -17.5 .133 30 .51 -105

= 50 Ω, TA=25°C, V

O

11

=8 V, IC␣=␣ 10 mA

CE

S

21

S

12

S

AT-41410 Typical Scattering Parameters,

Common Emitter, Z

Freq. S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.1 .45 -69 31.4 37.17 150 -39.2 .011 64 .87 -18

0.5 .58 -153 23.3 14.63 101 -33.6 .021 43 .49 -33

1.0 .59 -178 17.7 7.68 81 -30.4 .030 53 .43 -35

1.5 .60 169 14.3 5.21 68 -28.2 .039 58 .41 -40

2.0 .60 157 11.9 3.94 56 -25.8 .051 55 .41 -45

2.5 .61 151 10.1 3.20 50 -24.4 .060 55 .40 -49

3.0 .62 144 8.6 2.70 40 -23.1 .070 58 .40 -56

3.5 .63 135 7.4 2.35 30 -21.9 .080 54 .42 -66

4.0 .62 126 6.3 2.07 19 -20.5 .094 53 .44 -76

4.5 .61 116 5.3 1.85 9 -19.3 .108 45 .46 -84

5.0 .61 103 4.5 1.67 -2 -18.5 .119 41 .49 -90

5.5 .63 91 3.6 1.52 -12 -17.6 .131 34 .49 -96

6.0 .67 80 2.8 1.37 -22 -16.8 .144 29 .47 -104

A model for this device is available in the DEVICE MODELS section.

= 50 Ω, TA=25°C, V

O

11

=8 V, IC␣=␣ 25 mA

CE

S

21

S

12

S

22

22

AT-41410 Noise Parameters: V

Freq. NF

GHz dB

0.1 1.2 .12 4 0.17

0.5 1.2 .10 23 0.17

1.0 1.3 .06 49 0.16

2.0 1.6 .26 172 0.16

4.0 3.0 .46 -133 0.26

O

Mag Ang

= 8 V, IC = 10 mA

CE

Γ

opt

4-107

RN/50

100 mil Package Dimensions

.040

1.02
42EMITTER

.020
.508

BASE

1

.004 ± .002

.10 ± .05

.100

2.54

.495 ± .030

12.57 ± .76

COLLECTOR

EMITTER

3

Notes:
(unless otherwise specified)

1. Dimensions are

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.030

.76

in

mm

4-108