Datasheet AT-36408-TR1, AT-36408-BLK Datasheet (HP)

4.8 V NPN Common Emitter Output Power Transistor for␣ GSM Class IV Phones

Technical Data

AT-36408

Features

• 4.8 Volt Pulsed Operation

(pulse width = 577 µsec,

duty cycle = 12.5%)

• +35.0 dBm P Typ.

• 65% Collector Efficiency @␣ 900 MHz, Typ.

• 9 dB Power Gain @ 900 MHz, Typ.

• Internal Input Pre-Matching Facilitates Cascading

@ 900 MHz,

out

Applications

• Output Power Device for GSM Class IV Handsets

SOIC-8 Surface Mount Plastic Package

Outline P8

Pin Configuration

BASE

EMITTER

18

27

45

BASE EMITTER

COLLECTORCOLLECTOR 3 6

EMITTER

Description

Hewlett Packard’s AT-36408 combines internal input prematching with low cost, NPN power silicon bipolar junction transistors in a SOIC-8 surface mount plastic package. This device is designed for use as the output device for GSM Class IV handsets. At 4.8 volts, the device features +35 dBm pulsed output power, superior power added efficiency, and excellent gain, making the AT-36408 an excellent choice for battery powered systems.

The AT-36408 is fabricated with Hewlett Packard’s 10 GHz Ft SelfAligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, selfalignment techniques, and gold metalization in the fabrication of these devices.

4-81

5965-5960E

AT-36408 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

j

T

STG

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. Pulsed operation, pulse width = 577␣ µsec, duty cycle␣ =␣ 12.5%.

3. Derate at 133.3 mW/°C for T

the collector pins 3 and 6, where the lead contacts the circuit board.

4. Using the liquid crystal technique, V “hot-spot” resolution.

Emitter-Base Voltage V 1.4 Collector-Base Voltage V 16.0 Collector-Emitter Voltage V 9.5 Collector Current Peak Power Dissipation

[2]

[2, 3]

A 1.7

W 8.6

Junction Temperature °C 150 Storage Temperature °C -65 to 150

␣>␣85 °C. T

C

is defined to be the temperature of

C

= 4.5 V, Ic= 100 mA, T

CE

=150° C, 1 - 2␣ µm

j

[1]

Thermal Resistance

θjc = 60°C/W

[4]

:

Electrical Specifications, T

= 25° C

C

Symbol Parameters and Test Conditions Units Min. Typ. Max.

Freq. = 900 MHz, VCE = 4.8 V, ICQ = 50 mA, pulsed operation, pulse width =

577 µsec, duty cycle = 12.5%, Test Circuit A,unless otherwise specified

[1]

Pin = +26 dBm dBm +34.0 +35.0

Pin = +26 dBm % 55 65

F0 = 900 MHz dBc -50

F0 = 900 MHz dBc -40

P

= +35 dBm 7:1

out

P

out

η

C

Output Power

Collector Efficiency

H2 2nd Harmonic

H3 3rd Harmonic

Mismatch Tolerance, No Damage

any phase, 2 sec duration

BV

h

FE

I

CEO

Note:

1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A (GSM).

Emitter-Base Breakdown Voltage IE = 0.8 mA, open collector V 1.4

EBO

Collector-Base Breakdown Voltage IC = 4.0 mA, open emitter V 16.0

CBO

Collector-Emitter Breakdown Voltage IC = 20.0 mA, open base V 9.5

CEO

Forward Current Transfer Ratio VCE = 3 V, IC = 180 mA — 80 150 330

Collector Leakage Current V

= 5 V µA50

CEO

4-82

AT-36408 Typical Performance, T

Frequency = 900 MHz, VCE = 4.8 V, I

= 50 mA, pulsed operation, pulse width␣ =␣ 577␣ µsec, duty cycle␣ =␣ 12.5%,

CQ

= 25° C

C

Test Circuit A (GSM), unless otherwise specified.

38

Γ

= 0.88 ∠ -171

source

Γ

= 0.85 ∠ +172

load

34

P

30

26

22

OUTPUT POWER (dBm)

18

14

618161081412 2220 282624

out

η

c

INPUT POWER (dBm)

Figure 1. Output Power and Collector Efficiency vs. Input Power.

95

80

65

50

35

20

5

38

Γ

source

Γ

(%)

COLLECTOR EFFICIENCY

load

33

28

23

OUTPUT POWER (dBm)

18

13

612810 14 2016 18 22 2624

Figure 2. Output Power vs. Input Power Over Bias Voltage.

= 0.88 ∠ -171

= 0.85 ∠ +172

INPUT POWER (dBm)

3.6 V

4.8 V

6.0 V

80

Γ

= 0.88 ∠ -171

source

Γ

= 0.85 ∠ +172

load

3.6 V

4.8 V

6.0 V

618161081412 2220 282624

INPUT POWER (dBm)

COLLECTOR EFFICIENCY (%)

70 60 50 40 30 20 10

0

Figure 3. Collector Efficiency vs. Input Power Over Bias Voltage.

36

Γ

= 0.88 ∠ -171

source

35

Γ

= 0.85 ∠ +172

load

34 33 32 31 30 29

OUTPUT POWER (dBm)

28

27

15 2117 19 23 282725

INPUT POWER (dBm)

TC = +85°C

= +25°C

T

C

= –40°C

T

C

Figure 4. Output Power vs. Input Power Over Temperature.

36.0

35.8

35.6

35.4

35.2

35.0

34.8

34.6

OUTPUT POWER (dBm)

34.4

34.2

34.0 880

Γ

= 0.88 ∠ -171

source

Γ

= 0.85 ∠ +172

load

FREQUENCY (MHz)

Pin = +26 dBm

η

c

75

71

P

out

67

63

59

55

Figure 5. Output Power and Collector Efficiency vs. Frequency.

Note: Tuned at 900 MHz, then swept over frequency.

0

Γ

= 0.88 ∠ -171

source

Γ

= 0.85 ∠ +172

load

FREQUENCY (MHz)

Output R.L.

Input R.L.

(%)

-5

-10

-15

RETURN LOSS (dB)

-20

COLLECTOR EFFICIENCY

-25 800 850 950 1000900890 910 920900

Figure 6. Input and Output Return Loss vs. Frequency.

4-83

AT-36408 Typical Large Signal Impedances

VCE = 4.8 V, ICQ = 50 mA, Pulsed Operation, P

Freq. Γ

source

MHz Mag. Ang. Mag. Ang.

880 0.882 -170.0 0.847 172.7 890 0.885 -170.5 0.849 172.2 900 0.887 -171.1 0.851 171.6 910 0.890 -171.4 0.853 171.1 915 0.891 -169.0 0.854 168.4 920 0.893 -168.4 0.855 168.2

= +35.0 dBm

out

Γ

load

SPICE Model Parameters

Die Model Packaged Model

B

Die Area = 1.2 CPad = 0.3 pF

Value

Label

BF IKF ISE NE VAF NF TF XTF VTF ITF PTF XTB BR IKR ISC NC VAR NR

CPad

Label

280

299.9

9.9E-11

2.399

33.16

0.9935

1.6E-11

0.006656

0.02785

0.001 23 0

54.61 81

8.7E-13

1.587

1.511

0.9886

CPad

E1

Value

1E-9

TR

1.11

EG

3.598E-15

IS

3

XTI

0.8E-12

CJC

0.4831

VJC

0.2508

MJC

0.001

XCJC

0.999

FC

6.16E-12

CJE

1.186

VJE

0.5965

MJE

0.752

RB

0

IRB

0.01

RBM

1.27

RE

0.107

RC

E2

C

CPad

Rlead

B

Cpkg1

Rlead

E1

Cpkg1

Rlead

C

Cpkg1 Cpkg2

Rlead

E2

Label

Rlead Llead Rwire Lwire Cpkg1 Cpkg2 LE1

Llead

Cpkg2

Llead

Cpkg2

Llead

Value

0.63 Ω

1.45 nH

1.3 Ω

0.52 nH

0.4 pF

1.2 pF

0.3 nH

20 19 18 17

(pF)

16

Ccb

15 14 13 12

0462108

Vcb (V)

Figure 7. Collector-Base Capacitance vs. Collector-Base Voltage (DC Test).

Lwire Rwire

Label

LE2 Cbase Rwbase Lwbase Rwbb Lwbb

Lwbase Rwbase

Cbase

Lwbase Rwbase

L=0

R= 1 Ω

Lwbase Rwbase

Cbase

L=0

R=1 Ω

Value

0.00064 nH

46.0 pF

0.2 Ω

1.19 nH

0.1 Ω

0.1 nH

Lwbb Rwbb

Die

LE1 LE2

Die

LE1 LE2

Die

LE1 LE2

Die

LE1 LE2

4-84

AT-36408 Typical Scattering Parameters, Common Emitter, Z

VCE = 3.6 V, Ic = 200 mA, T

Freq. S

11

= 25° C

c

S

21

S

12

= 50 Ω

O

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.05 0.96 -175 22.3 13.08 93 -38.4 0.012 11 0.74 -169

0.10 0.96 -178 16.4 6.61 88 -37.7 0.013 13 0.74 -174

0.25 0.96 177 8.8 2.76 80 -36.5 0.015 24 0.75 -177

0.50 0.94 173 4.2 1.63 66 -34.4 0.019 33 0.73 -177

0.75 0.90 169 3.4 1.49 46 -32.0 0.025 27 0.71 -172

0.90 0.84 168 4.2 1.63 24 -32.0 0.025 10 0.72 -165

1.00 0.79 170 4.6 1.70 0 -34.0 0.020 -14 0.81 -160

1.25 0.92 175 -1.2 0.87 -68 -37.1 0.014 126 1.01 -172

1.50 0.97 169 -9.6 0.33 -98 -30.2 0.031 97 0.96 -177

VCE = 4.8 V, Ic = 200 mA, T

= 25° C

c

0.05 0.96 -174 22.6 13.42 93 -37.7 0.013 11 0.74 -169

0.10 0.96 -178 16.6 6.79 88 -37.7 0.013 13 0.73 -174

0.25 0.96 178 9.0 2.83 80 -36.5 0.015 23 0.74 -177

0.50 0.94 173 4.4 1.66 66 -34.4 0.019 32 0.72 -176

0.75 0.90 169 3.6 1.51 46 -32.4 0.024 26 0.70 -172

0.90 0.84 168 4.3 1.64 24 -32.0 0.025 9 0.72 -164

1.00 0.80 170 4.6 1.71 0 -34.0 0.020 -14 0.81 -160

1.25 0.92 175 -1.0 0.89 -67 -37.1 0.014 126 1.01 -171

1.50 0.97 169 -9.4 0.34 -97 -30.2 0.031 97 0.96 -177

S

22

VCE = 6.0 V, Ic = 200 mA, T

= 25° C

c

0.05 0.96 -174 22.7 13.60 93 -37.7 0.013 12 0.73 -169

0.10 0.96 -178 16.7 6.88 88 -37.1 0.014 14 0.72 -174

0.25 0.96 178 9.2 2.87 79 -35.9 0.016 23 0.73 -177

0.50 0.94 173 4.5 1.68 65 -34.0 0.020 30 0.71 -176

0.75 0.90 169 3.7 1.52 45 -32.0 0.025 24 0.69 -171

0.90 0.85 168 4.3 1.64 23 -32.0 0.025 8 0.72 -164

1.00 0.80 170 4.6 1.70 0 -34.0 0.020 -14 0.81 -159

1.25 0.92 175 -1.0 0.90 -67 -37.7 0.013 125 1.01 -171

1.50 0.97 169 -9.2 0.35 -97 -30.2 0.031 96 0.95 -177

Typical Performance

35

MSG

30 25 20 15

(dB)

10

GAIN

5 0

-5

-10

0.05 0.500.10 0.25 0.75 1.50

MAG

2

|

|S

21

FREQUENCY (GHz)

MSG

1.000.90 1.25

Figure 8. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V Ic = 200 mA.

= 3.6V,

CE

35

MSG

30 25 20 15

(dB)

10

GAIN

5 0

-5

-10

0.05 0.500.10 0.25 0.75 1.50

MAG

2

|

|S

21

FREQUENCY (GHz)

MSG

1.000.90 1.25

Figure 9. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. V Ic = 200 mA.

= 4.8V,

CE

35 30 25 20 15

(dB)

10

GAIN

-5

-10

0.05 0.500.10 0.25 0.75 1.50

MSG

MAG

5 0

2

|

|S

21

FREQUENCY (GHz)

Figure 10. Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs. Frequency. VCE = 6.0V, Ic = 200 mA.

MSG

1.000.90 1.25

4-85

Test Circuit A: Test Circuit Board Layout @ 900 MHz (GSM)

38.1 (1.5)

V

BB

V

C1

BB

T1

R1

R2 R3

C2

C3

L1

R4

PA2 DEMO

76.2 (3.0)

Pulse Test

V

= 4.8 V

CE

= 50 mA

I

CQ

Freq. = 900 MHz

NOTE: Dimensions are shown in millimeters (inches).

Test Circuit: FR-4 Microstrip, glass epoxy board Dielectric Constant = 4.5 Thickness = 0.79 (.031)

L2

R5

B–MFG0140

C6

C7

V

CC

C8 C9

V

CC

9/96

C10C5C4

OUTPUTINPUT

C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 R2 R3 R4 R5 T1 L1 L2

39.0 pF

100.0 nF

12.5 pF

11.5 pF

100.0 nF

39.0 pF

1.5 µF

10.0 µF

39.0 pF

2.2 Ω

619.0 Ω

2.2 Ω

10.0 Ω

MBT 2222A

18.0 µH

Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz (GSM)

B

CE

RF IN

V

BB

2.2 Ω

DC Transistor

619 Ω

2.2 Ω 10 Ω

18 µH

39 pF

12.5 pF = 1.52 (.060)

Pulse Test

V

= 4.8 V

CE

= 50 mA

I

CQ

Freq. = 900 MHz

100 nF

39 pF 39 pF

80 Ω 80 Ω

λ/4 @ 900 MHz λ/4 @ 900 MHz

50 Ω

= 4.88 (.192)

4-86

10 Ω

100 nF 1.5 µF 10 µF

18 µH

11.5 pF

V

CC

39 pF

RF OUT

Part Number Ordering Information

Part Number No. of Devices Container

AT-36408-TR1 1000 7" Reel

AT-36408-BLK 25 Carrier Tape

Package Dimensions

SOIC-8 Surface Mount Plastic Package

1.27 (.050) 6x

3.80/4.00

(.1497/.1574)

Pin 1

1.35/1.75

(.0532/.0688)

0.33/0.51

(.013/.020) 8X

Note:

1. Dimensions are shown in millimeters (inches).

4.72/5.00

(.186/.197)

0.10/0.25

(.004/.0098)

5.84/6.20

(.230/.244)

0.38 ± 0.10

(.015 ± .004) x 45°

0°/8°

0.10 (.004)

0.19/0.25

(.0075/.0098)

0.41/1.27

(.016/.050)

4-87

Tape Dimensions and Product Orientation For Package SOIC-8

REEL

CARRIER

TAPE

USER FEED DIRECTION

COVER TAPE

D

0

t

COVER TAPE

P

0

P

2

A

C

K

B

10 PITCHES CUMULATIVE TOLERANCE ON TAPE ±0.2 MM (±0.008)

EMBOSSMENT

E

F

W

USER FEED DIRECTION

T

CAVITY

PERFORATION

CARRIER TAPE

COVER TAPE

DISTANCE BETWEEN CENTERLINE

P

CENTER LINES OF CAVITY

DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)

LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER

DIAMETER PITCH POSITION

WIDTH THICKNESS

WIDTH TAPE THICKNESS

CAVITY TO PERFORATION (WIDTH DIRECTION)

CAVITY TO PERFORATION (LENGTH DIRECTION)

1

A B K P D

D P E

W

C T

F

P

1 1

0 0

t

2

6.45 ± 0.10

5.13 ± 0.10

2.11 ± 0.10

8.00 ± 0.10

1.50 min.

1.50 + 0.10/-0

4.00 ± 0.10

1.75 ± 0.10

8.00 ± 0.30

0.255 ± 0.013

9.19 ± 0.10

0.051 ± 0.010

5.51 ± 0.05

2.00 ± 0.05

D

1

0.254 ± 0.004

0.202 ± 0.004

0.083 ± 0.004

0.315 ± 0.004

0.059 min.

0.059 + 0.004/-0

0.157 ± 0.004

0.069 ± 0.004

0.315 ± 0.012

0.0100 ± 0.0005

0.362 ± 0.004

0.0020 ± 0.0004

0.217 ± 0.002

0.079 ± 0.002

4-88