Datasheet AT-31625-TR1, AT-31625-BLK Datasheet (HP)

4.8 V NPN Common Emitter
Medium Power Output Transistor

Technical Data

AT-31625

Features

• 4.8 Volt Operation

• +28.0 dBm P
Typ.

• 70% Collector Efficiency
@␣ 900 MHz, Typ.

• 9 dB Power Gain @ 900 MHz,
Typ.

• -31 dBc IMD3 @ P
21␣ dBm per Tone, 900␣ MHz,
Typ.

• 50% Smaller than SOT-223
Package

@ 900 MHz,

out

of

out

Applications

• Medium Power Driver
Device for Cellular/PCS,
ISM 900, WLAN

• Output Power Device for
ISM 900, Cordless, WLAN

MSOP-3 Surface Mount Plastic Package

Outline 25

Pin Configuration

COLLECTOR

4

EMITTER 1 2

3 EMITTER

BASE

Description

Hewlett Packard’s AT-31625 is a
low cost, NPN medium power
silicon bipolar junction transistor
housed in a miniature, MSOP-3
surface mount plastic package.
The AT-31625 can be used as a
driver device or an output device,
depending on the specific applica­tion. The AT-31625 features
+28␣ dBm CW output power when
operated at 4.8 volts. Excellent
gain and superior efficiency make
the AT-31625 ideal for use in
battery powered systems.

The AT-31625 is fabricated with
Hewlett Packard’s 10 GHz Ft Self­Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self­alignment techniques, and gold
metalization in the fabrication of
these devices.

4-43

5965-5911E

AT-31625 Absolute Maximum Ratings

Absolute

Symbol Parameter Units Maximum

V

EBO

V

CBO

V

CEO

I

C

P

T

T

j

T

STG

Emitter-Base Voltage V 1.4
Collector-Base Voltage V 16.0
Collector-Emitter Voltage V 9.5
Collector Current mA 320
Power Dissipation

[2]

W 1.0

Junction Temperature °C 150
Storage Temperature °C -65 to 150

[1]

Thermal Resistance

[3]

:

θjc = 65°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

2. Derate at 15.4 mW/°C for T

Tc is defined to be the temperature
of the collector pin 4, where the
lead contacts the circuit board.

3. Using the liquid crystal technique,

= 4.8 V, Ic= 50 mA, T

V

CE

1-2␣ µm “hot-spot” resolution.

> 85°C.

c

=150°C,

j

Electrical Specifications, T

= 25° C

C

Symbol Parameters and Test Conditions Units Min. Typ. Max.

Freq. = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A,
unless otherwise specified

P

out

η

C

Output Power

Collector Efficiency

IMD33rd Order Intermodulation Distortion, 2 Tone Test, F1 = 899 MHz dB c -31

P

each Tone = +21 dBm

out

Mismatch Tolerance, No Damage

[1]

[1]

[1]

[1]

Pin = +19 dBm dBm +27.0 +28.0

Pin = +19 dBm % 55 70

F2 = 901 MHz

P

= +28 dBm 7:1

out

any phase, 2 sec duration

BV

BV

BV

h

FE

I

CEO

Note:

1. With external matching on input and output, tested in a 50 ohm environment. Refer to Test Circuit A.

Emitter-Base Breakdown Voltage IE = 0.2 mA, open collector V 1.4

EBO

Collector-Base Breakdown Voltage IC = 1.0 mA, open emitter V 16.0

CBO

Collector-Emitter Breakdown Voltage IC = 5.0 mA, open base V 9.5

CEO

Forward Current Transfer Ratio VCE = 3 V, IC = 180 mA — 80 150 330

Collector Leakage Current V

= 5 V µA15

CEO

4-44

AT-31625 Typical Performance, T

= 25° C

C

Frequency = 900 MHz, VCE = 4.8 V, ICQ = 5 mA, CW operation, Test Circuit A, unless otherwise specified.

31

Γ

= 0.73 ∠ -156

source

29

Γ

= 0.42 ∠ -179

load

27
25

(dBm)

23
21

19

17

OUTPUT POWER

15
13

11

P

out

η

c

21412641081816 2220

INPUT POWER (dBm)

100
90

80
70
60
50
40
30
20
10

0

Figure 1. Output Power and Collector
Efficiency vs. Input Power.

32

Γ

= 0.73 ∠ -156

source

30

Γ

= 0.42 ∠ -179

(%)

COLLECTOR EFFICIENCY

load

28
26

(dBm)

24
22
20
18

OUTPUT POWER

16
14

12

INPUT POWER (dBm)

3.0 V

3.6 V

4.8 V

141261081816 2220

Figure 2. Output Power vs. Input
Power Over Bias Voltage.

100

Γ

= 0.73 ∠ -156

source

Γ

= 0.42 ∠ -179

load

90

(%)

80

70

60

50

40

COLLECTOR EFFICIENCY

30

12 1814 16 20 22

INPUT POWER (dBm)

Figure 3. Collector Efficiency vs.
Input Power Over Bias Voltage.

3.0 V

3.6 V

4.8 V

32

Γ

= 0.73 ∠ -156

source

30

Γ

= 0.42 ∠ -179

load

28

(dBm)

26
24
22
20
18

OUTPUT POWER

16
14

INPUT POWER (dBm)

TC = +85°C

= +25°C

T

C

= –40°C

T

C

141261081816 2220

Figure 4. Output Power vs. Input
Power Over Temperature.

0

Γ

= 0.73 ∠ -156

source

-2

Γ

= 0.42 ∠ -179

load

-4

-6

(dB)

-8

-10

-12

RETURN LOSS

-14

-16

-18
800 850 950 1000900

FREQUENCY (MHz)

Output R.L.

Input R.L.

Figure 7. Input and Output Return
Loss vs. Frequency.

0

Γ

= 0.73 ∠ -156

source

-5

Γ

= 0.42 ∠ -179

load

-10

-15

-20

(dBc)

-25

IMD

-30

-35

-40

-45

IMD

-50
81410 12 16 18 22 2420

Figure 5. IMD
Power Per Tone.

5

OUTPUT POWER/TONE (dBm)

, IMD5 vs. Output

3

IMD

31.0

Γ

30.5

Γ

30.0

29.5

(dBm)

29.0

28.5

3

28.0

27.5

OUTPUT POWER

27.0

26.5

26.0
800 920840 880 960 1000

Pin = +19 dBm

= 0.73 ∠ -156

source

= 0.42 ∠ -179

load

FREQUENCY (MHz)

100
90

(%)

η

c

P

out

80
70
60
50
40
30
20

COLLECTOR EFFICIENCY

10

0

Figure 6. Output Power and Collector
Efficiency vs. Frequency.

Note: Tuned at 900 MHz, then Swept over
Frequency.

4-45

AT-31625 Typical Large Signal Impedances

VCE = 4.8 V, ICQ = 5 mA, P

Freq.

MHz Mag. Ang. Mag. Ang.

800 0.661 -149.0 0.382 -171.3
825 0.679 -150.6 0.394 -172.8
850 0.697 -152.4 0.403 -174.6
875 0.712 -154.2 0.412 -176.5
900 0.727 -155.8 0.422 -179.0
925 0.740 -157.5 0.426 179.3
950 0.754 -159.0 0.432 177.2
975 0.767 -160.4 0.437 174.9

1000 0.777 -162.1 0.438 172.5

␣ =␣ +28.0 dBm

out

Γ

source

Γ

load

SPICE Model Parameters

Die Model Packaged Model

CPad

CPad

B

C

CPad

Lb1

B

0.2 Ω

5.5

5.0

4.5

4.0

(pF)

3.5

Ccb

3.0

2.5

2.0
0462108

Vcb (V)

Figure 8. Collector-Base Capacitance
vs. Collector-Base Voltage (DC Test).

Cbc

Lb2

Rb2

B

Die

C

Lc1

C

Die Area = 1.2
CPad = 0.43 pF

Label

BF
IKF
ISE
NE
VAF
NF
TF
XTF
VTF
ITF
PTF
XTB
BR
IKR
ISC
NC
VAR
NR

Value

150

299.9

9.9E-11

2.399

33.16

0.9935

1.6E-11

0.006656

0.02785

0.001
23
0

54.61
81

8.7E-13

1.587

1.511

0.9886

E1

Label

TR
EG
IS
XTI
CJC
VJC
MJC
XCJC
FC
CJE
VJE
MJE
RB
IRB
RBM
RE
RC

Value

1E-9

1.11

3.598E-15
3

1.4E-12

0.4776

0.2508

0.001

0.999

5.06E-12

1.148

0.5965

0.752
0

0.01

2.488

1.288

E2

Label

Cbc
Cbe
Cce
Lb1
Lb2
Rb2
Le1
Lc1

E1

Cbe Cce

0.2 Ω

Value

0.009 pF

1.20 pF

0.48 pF

1.53 nH

0.045 nH

0.1 Ω

0.38 nH

0.47 nH

Le1

E

E2

4-46

AT-31625 Typical Scattering Parameters, Common Emitter, Z

VCE = 3.0 V, Ic = 200 mA, T

Freq. S

11

= 25° C

c

S

21

S

12

= 50 Ω

O

S

GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.

0.05 0.72 -150 30.7 34.19 113 -34.0 0.02 40 0.56 -120

0.10 0.77 -166 25.3 18.43 99 -34.0 0.02 42 0.52 -148

0.25 0.79 179 17.5 7.54 86 -28.0 0.04 57 0.51 -169

0.50 0.79 169 11.6 3.81 74 -23.1 0.07 64 0.51 -178

0.75 0.79 161 8.2 2.58 65 -20.9 0.09 63 0.52 177

0.90 0.79 156 6.7 2.17 59 -19.2 0.11 62 0.52 175

1.00 0.79 153 5.9 1.97 56 -18.4 0.12 61 0.52 174

1.25 0.79 146 4.1 1.61 48 -16.5 0.15 58 0.53 170

1.50 0.79 140 2.7 1.37 40 -14.9 0.18 54 0.54 167

1.75 0.79 133 1.7 1.21 32 -13.6 0.21 49 0.54 164

2.00 0.79 126 0.7 1.09 26 -12.8 0.23 45 0.55 160

2.25 0.79 120 0.0 1.00 19 -11.7 0.26 41 0.55 156

2.50 0.79 114 -0.6 0.93 13 -11.1 0.28 36 0.56 152

22

VCE = 3.6 V, Ic = 200 mA, T

= 25° C

c

0.05 0.71 -148 31.2 36.39 114 -34.0 0.02 41 0.56 -117

0.10 0.76 -165 25.9 19.69 100 -34.0 0.02 43 0.51 -146

0.25 0.78 180 18.1 8.06 86 -28.0 0.04 57 0.50 -168

0.50 0.78 169 12.2 4.07 75 -24.4 0.06 64 0.50 -177

0.75 0.78 161 8.8 2.75 65 -20.9 0.09 64 0.51 178

0.90 0.78 156 7.3 2.31 60 -19.2 0.11 62 0.51 176

1.00 0.78 153 6.4 2.10 56 -18.4 0.12 61 0.51 174

1.25 0.78 146 4.7 1.71 48 -16.5 0.15 58 0.52 171

1.50 0.78 140 3.3 1.46 40 -14.9 0.18 54 0.53 168

1.75 0.78 133 2.1 1.28 33 -14.0 0.20 50 0.54 164

2.00 0.78 127 1.3 1.16 26 -12.8 0.23 46 0.54 161

2.25 0.78 121 0.4 1.05 19 -11.7 0.26 41 0.55 157

2.50 0.78 115 -0.2 0.98 13 -11.1 0.28 37 0.55 153

VCE = 4.8 V, Ic = 200 mA, T

= 25° C

c

0.05 0.70 -145 31.7 38.47 115 -34.0 0.02 41 0.56 -114

0.10 0.75 -164 26.4 20.90 100 -34.0 0.02 43 0.50 -144

0.25 0.77 -180 18.7 8.57 87 -28.0 0.04 57 0.49 -167

0.50 0.77 169 12.7 4.33 75 -24.4 0.06 64 0.49 -176

0.75 0.77 161 9.3 2.92 66 -20.9 0.09 64 0.49 179

0.90 0.77 157 7.8 2.45 60 -19.2 0.11 62 0.50 176

1.00 0.77 154 7.0 2.23 57 -18.4 0.12 61 0.50 175

1.25 0.77 147 5.2 1.81 48 -16.5 0.15 58 0.51 172

1.50 0.77 140 3.8 1.54 41 -14.9 0.18 54 0.51 168

1.75 0.77 134 2.6 1.35 33 -14.0 0.20 50 0.52 165

2.00 0.77 127 1.7 1.22 27 -12.8 0.23 46 0.53 162

2.25 0.77 121 0.9 1.11 20 -12.0 0.25 41 0.54 158

2.50 0.77 115 0.3 1.03 13 -11.1 0.28 37 0.54 154

Typical Performance

35
30

MSG

25
20

(dB)

15

GAIN

10

5
0

-5

0.05 0.25 0.75 2.502.00

MAG

2

|S

|

21

1.00 1.50

FREQUENCY (GHz)

MSG

Figure 9. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. V
Ic = 200 mA.

= 3.0V,

CE

35

MSG

30
25
20

(dB)

15

GAIN

10

-5

MAG

2

|

|S

21

5
0

0.05 0.25 0.75 2.502.00

1.00 1.50

FREQUENCY (GHz)

MSG

Figure 10. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. V
Ic = 200 mA.

4-47

= 3.6V,

CE

35

MSG

30

25

20

(dB)

15

GAIN

10

MAG

2

|

|S

21

5

0

0.05 0.25 0.75 2.502.00

1.00 1.50

FREQUENCY (GHz)

Figure 11. Insertion Power Gain,
Maximum Available Gain, and Maximum
Stable Gain vs. Frequency. VCE = 4.8V,
Ic = 200 mA.

MSG

AT-31625 Typical Performance, T

= 25° C

C

Frequency = 1800 MHz, VCE = 4.8 V, ICQ = 15 mA, CW operation, Test Circuit B,
unless otherwise specified.

35

Γ

= 0.75 ∠ -135

source

Γ

= 0.39 ∠ -179

load

30

25

20

P

15

10

OUTPUT POWER (dBm)

5

0

out

η

c

0124 8 16 20 24

INPUT POWER (dBm)

Figure 12. Output Power and
Collector Efficiency vs. Input Power.

70

60

50

40

30

20

10

COLLECTOR EFFICIENCY (%)

0

0

Γ

= 0.75 ∠ -135

source

Γ

= 0.39 ∠ -179

load

-5

-10

-15

RETURN LOSS (dB)

-20

-25
1700 1750 1850 19001800

FREQUENCY (MHz)

Output R.L.

Input R.L.

Figure 13. Input and Output Return
Loss vs. Frequency.

AT-31625 Typical Large Signal Impedances

VCE = 4.8 V, ICQ = 15 mA, P

Freq.

MHz Mag. Ang. Mag. Ang.

1700 0.717 -131.8 0.373 -174.3
1725 0.724 -132.6 0.378 -175.6
1750 0.732 -133.4 0.381 -176.7
1775 0.743 -134.3 0.386 -177.9
1800 0.752 -135.4 0.390 -179.1
1825 0.763 -136.3 0.394 179.5
1850 0.773 -137.0 0.397 178.4
1875 0.780 -137.8 0.401 177.1
1900 0.788 -138.7 0.403 175.7

␣ =␣ +25.0 dBm

out

Γ

source

Γ

load

4-48

Test Circuit A: Test Circuit Board Layout @ 900 MHz

38.1 (1.5)

V

BB

V

C1

BB

T1

R1

R2

R3

C2

C3

L1

R4

C4

PA3 DEMO

76.2 (3.0)

CW Test

V

= 4.8 V

CE

= 5.0 mA

I

CQ

Freq. = 900 MHz

NOTE:
Dimensions are shown in millimeters (inches).

Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)

C5

L2

R5

B–MFG0141

C6

C7

V

CC

C8 C9

V

C10

OUTPUTINPUT

CC

9/96

C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2

100.0 pF

100.0 pF

100.0 nF

6.8 pF

100.0 nF

100.0 pF

2.7 pF

1.5 µF

10.0 µF

100.0 pF

2.2 Ω

750.0 Ω

2.2 Ω

10.0 Ω

10.0 Ω

MBT 2222A

18.0 µH

18.0 µH

Test Circuit A: Test Circuit Schematic Diagram @ 900 MHz

V

B

CE

RF IN

2.2 Ω

DC
Transistor

750 Ω

2.2 Ω
10 Ω

18 µH

100 pF

6.8 pF = 5.38 (.212)

BB

100 nF

100 pF 100 pF

80 Ω 80 Ω

λ/4 @ 900 MHz λ/4 @ 900 MHz

50 Ω

CW Test

V

= 4.8 V

CE

= 5.0 mA

I

CQ

Freq. = 900 MHz

= 19.91 (.784)

4-49

50 Ω

10 Ω

100 nF 1.5 µF 10 µF

18 µH

100 pF

2.7 pF

V

CC

RF OUT

Test Circuit B: Test Circuit Board Layout @ 1800 MHz

38.1 (1.5)

V

BB

V

C1

BB

R1

T1

C2

R2
R3

C3

L1
R4

C4 C6

PA3 DEMO

76.2 (3.0)

CW Test

V

= 4.8 V

CE

= 15.0 mA

I

CQ

Freq. = 1800 MHz

NOTE:
Dimensions are shown in millimeters (inches).

Test Circuit:
FR-4 Microstrip, glass epoxy board
Dielectric Constant = 4.5
Thickness = 0.79 (.031)

C5

L2

R5

B–MFG0141

C7

V

CC

C8 C9

V

C10

OUTPUTINPUT

CC

9/96

C1
C2
C3
C4
C5
C6
C7
C8
C9
C10
R1
R2
R3
R4
R5
T1
L1
L2

100.0 pF

100.0 pF

100.0 nF

3.0 pF

100.0 nF

1.4 pF

100.0 pF

1.5 µF

10.0 µF

100.0 pF

2.2 Ω

350.0 Ω

2.2 Ω

10.0 Ω

10.0 Ω

MBT 2222A

18.0 µH

18.0 µH

Test Circuit B: Test Circuit Schematic Diagram @ 1800 MHz

B

CE

RF IN

V

2.2 Ω

DC
Transistor

350 Ω

2.2 Ω
10 Ω

18 µH

100 pF

3.0 pF = 0.89 (.035)

BB

CW Test

V

= 4.8 V

CE

= 15.0 mA

I

CQ

Freq. = 1800 MHz

100 nF

100 pF 100 pF

80 Ω 80 Ω

λ/4 @ 1800 MHz λ/4 @ 1800 MHz

50 Ω

50 Ω

= 10.49 (.413)

4-50

10 Ω

100 nF 1.5 µF 10 µF

18 µH

1.4 pF

V

CC

100 pF

RF OUT

Part Number Ordering Information

Part Number No. of Devices Container

AT-31625-TR1 1000 7" Reel

AT-31625-BLK 25 Carrier Tape

Package Dimensions

MSOP-3 Surface Mount Plastic Package

3.12/3.23

(.123/.127)

R 0.25 (.010) MAX

0.18/0.25

(.007/.010)

SEE DETAIL A

4.62/5.03

(.182/.198)

0.51 (.020) DIA X

0.15 (.006) DEEP
REF

0.76 REF
(.030)

PIN 1

0.76 REF
(.030)

SEATING

PLANE

0.10/0.25

(.004/.010)

1.91

(.075)

BASIC

TOP VIEW

SIDE VIEW

0.41/0.86

(.016/.034)

DETAIL A

4.80/5.00

(.189/.197)

0.58/0.69

(.023/.027)

2.64/2.82

(.104/.111)

1.09/1.42

(.043/.056)

LEAD TIP
COPLANARITY

R 0.20 (.008) MIN

R 0.20/0.33

(.008/.013)

0.25 (.010)
GAUGE PLANE

0° MIN/8° MAX

1.22/1.60

(.048/.063)

0.10 (.004)

SEATING
PLANE

NOTE:
DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)

4-51

Tape Dimensions and Product Orientation for Package MSOP-3

REEL

CARRIER

TAPE

USER
FEED
DIRECTION

COVER TAPE

2.00 ± 0.05

(.079 ± .002)

1.75 (.069)

4.0 (.157)

1.5 (.059)

0.30 ± 0.05

(.012 ± .002)

5.50 ± 0.05

(.217 ± .002)

R 0.5 (.020) TYP

NOTES:

1. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)

2. TOLERANCES: .X ± 0.1 (.XXX ± .004)

8.0

(.315)

1.5

(.059)

5.2

(.205)

5.2

(.205)

12.0 ± 0.3

(.472 ± .012)

R 0.3
(.012)

1.75

(.069)

4-52