Datasheet AT-31033-TR1, AT-31033-BLK, AT-31011-TR1, AT-31011-BLK Datasheet (HP)

Low Current, High Performance
NPN Silicon Bipolar Transistor

Technical Data

AT-31011
AT-31033

Features

• High Performance Bipolar
Transistor Optimized for
Low Current, Low Voltage
Operation

• 900 MHz Performance:

AT-31011: 0.9 dB NF, 13 dB G
AT-31033: 0.9 dB NF, 11 dB G

• Characterized for End-Of­Life Battery Use (2.7 V)

• SOT-143 SMT Plastic
Package

• Tape-And-Reel Packaging
Option Available

[1]

Outline Drawing

EMITTER COLLECTOR

310

BASE EMITTER

SOT-143 (AT-31011)

COLLECTOR

310

BASE EMITTER

SOT-23 (AT-31033)

Description

Hewlett-Packard’s AT-31011 and
AT-31033 are high performance
NPN bipolar transistors that have
been optimized for operation at
low voltages, making them ideal

A

A

for use in battery powered
applications in wireless markets.
The AT-31033 uses the 3 lead
SOT-23, while the AT-31011 places
the same die in the higher
performance 4 lead SOT-143. Both
packages are industry standards
compatible with high volume
surface mount assembly
techniques.

battery operated systems as an
LNA, gain stage, buffer, oscillator,
or active mixer. Applications
include cellular and PCS handsets
as well as Industrial-Scientific­Medical systems. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 11 dB or more
associated gain at a 2.7 V, 1 mA
bias. Moderate output power
capability (+9 dBm P

) coupled

1dB

with an excellent noise figure
yields high dynamic range for a
microcurrent device. High gain
capability at 1 V, 1 mA makes these
devices a good fit for 900 MHz
pager applications.

The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of these transistors yields
extremely high performance
products that can perform a mul­tiplicity of tasks. The 10 emitter
finger interdigitated geometry
yields an extremely fast transistor
with low operating currents and
reasonable impedances.

The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard’s
10 GHz fT, 30 GHz f

max

Self­Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-

Optimized performance at 2.7 V
makes these devices ideal for use
in 900 MHz, 1.9 GHz, and 2.4 GHz

alignment techniques, and gold
metalization in the fabrication of
these devices.

Note:

1. Refer to “Tape-and-Reel Packaging for
Semiconductor Devices”

4-33

5965-8919E

AT-31011, AT-31033 Absolute Maximum Ratings

Symbol Parameter Units Absolute Maximum

V

EBO

V

CBO

V

CEO

I

P

T

T

STG

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage.

2. T

Mounting Surface

3. Derate at 1.82 mW/°C for TC > 67.5°C.

Emitter-Base Voltage V 1.5

Collector-Base Voltage V 11

Collector-Emitter Voltage V 5.5

Collector Current mA 16

C

Power Dissipation

T

Junction Temperature °C 150

j

[2,3]

mW 150

Storage Temperature °C -65 to 150

= 25°C.

[1]

Thermal Resistance

θjc = 550°C/W

[2]

:

Electrical Specifications, T

= 25°C

A

AT-31011 AT-31033

Symbol Parameters and Test Conditions Units Min Typ Max Min Typ Max

NF Noise Figure

VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 0.9

G

Associated Gain

A

VCE = 2.7 V, IC = 1 mA f = 0.9 GHz dB 11

h

Forward Current VCE = 2.7 V - 70 300 70 300

FE

[1]

13

[1]

[1]

1.2

[1]

[2]

0.9

1.2

[2]

9

11

[2]

Transfer Ratio IC = 1 mA

I

CBO

I

EBO

Notes:

1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.

2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Input loss = 0.4 dB; output loss = 0.4 dB.

1000 pF

W = 10 L = 1000

TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)

DIMENSIONS IN MILS

Collector Cutoff Current V

Emitter Cutoff Current V

V

BB

W = 10 L = 1860

W = 30 L = 100

W = 30 L = 100

TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2

NOT TO SCALE

= 3 V µA 0.05 0.2 0.05 0.2

CB

= 1 V µA 0.1 1.5 0.1 1.5

EB

25 Ω

V

CC

W = 10 L = 1860

1000 pF

W = 10 L = 1025

[2]

Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a
Compromise Match Between Best Noise Figure, Best Gain, Stability, a Practical,
Synthesizable Match, and a Circuit Capable of Matching Both the AT-305 and AT-310
Geometries.

4-34

Characterization Information, T

= 25°

A

C

AT-31011 AT-31033

Symbol Parameters and Test Conditions Units Typ Typ

P

1dB

Power at 1 dB Gain Compression (opt tuning)
VCE = 2.7 V, IC = 10 mA f = 0.9 GHz dBm 9 9

G

Gain at 1 dB Gain Compression (opt tuning)

1dB

VCE = 2.7 V, IC = 10 mA f = 0.9 GHz d B 15 13

IP

Output Third Order Intercept Point,

3

VCE = 2.7 V, IC = 10 mA (opt tuning) f = 0.9 GHz dBm 20 20

2

|S21|

C

2.5

2

1.5

1

NOISE FIGURE (dB)

0.5

0

0

Figure 2. AT-31011 and AT-31033
Minimum Noise Figure and Amplifier

[1]

NF

vs. Frequency and Current at

VCE␣ = 2.7 V.

Gain in 50 Ω System; V

E

Collector-Base Capacitance VCB = 3V, f = 1 M Hz pF 0.04 0.04

CB

AMPLIFIER NF

NF MIN.

1 mA
10 mA

0.5 2.5

1 1.5

FREQUENCY (GHz)

2

= 2.7 V, IC = 1 mA f = 0.9 GHz dB 10 9

CE

25

20

15

Ga (dB)

10

5

0

0

0.5 2.5

10 mA

1 mA

1.0 1.5

FREQUENCY (GHz)

2.0

Figure 3. AT-31011 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE␣ = 2.7 V.

25

20

15

Ga (dB)

10

5

0

0.5 2.5

0

10 mA

1 mA

1.0 1.5

FREQUENCY (GHz)

Figure 4. AT-31033 Associated Gain at
Optimum Noise Match vs. Frequency
and Current at VCE␣ = 2.7 V.

2.0

10

8

6

4

P 1dB (dBm)

2

0

10 mA

5 mA

2 mA

0.5 2.5

0

FREQUENCY (GHz)

1.0 1.5

2 mA
5 mA
10 mA

2.0

Figure 5. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE␣ = 2.7 V.

20

16

12

8

G 1dB (dB)

4

0

0.5 2.5

0

1.0 1.5

FREQUENCY (GHz)

2 mA
5 mA
10 mA

2.0

Figure 6. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ = 2.7 V.

16

12

8

G 1dB (dB)

4

0

0

1.0 1.5

0.5 2.5
FREQUENCY (GHz)

2 mA
5 mA
10 mA

2.0

Figure 7. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ = 2.7 V.

Note:

1. Amplifier NF represents the noise figure which can be expected in a real circuit representing reasonable reflection coefficients and
including circuit losses.

4-35

AT-31011, AT-31033 Typical Performance

15

20

20

12

P 1dB (dBm)

10 mA

5 mA

9

6

2 mA

3

0

0.5 2.5

0

1.0 1.5

FREQUENCY (GHz)

2 mA
5 mA
10 mA

2.0

Figure 8. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE␣ = 5 V.

4

5 mA

2

0

P 1dB (dBm)

-2

-4

2 mA

0

1.0 1.5

0.5 2.5
FREQUENCY (GHz)

2.0

16

12

8

G 1dB (dB)

4

0

0.5 2.5

0

1.0 1.5

FREQUENCY (GHz)

2 mA
5 mA
10 mA

2.0

Figure 9. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ = 5 V.

20

16

5 mA

12

8

G 1dB (dB)

4

0

0

0.5 2.5
FREQUENCY (GHz)

2 mA

1.0 1.5

2.0

16

12

8

G 1dB (dB)

4

0

0.5 2.5

0

1.0 1.5

FREQUENCY (GHz)

2 mA
5 mA
10 mA

2.0

Figure 10. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ = 5 V.

20

16

5 mA

12

8

G 1dB (dB)

4

0

0

0.5 2.5

1.0 1.5

FREQUENCY (GHz)

2 mA

2.0

Figure 11. AT-31011 and AT-31033
Power at 1 dB Gain Compression vs.
Frequency and Current at VCE␣ = 1 V.

25

20

15

10

Ga (dBm)

5

0

-50

Ga

NF

0 100

TEMPERATURE (°C)

50

2.5

2.0

1.5

1.0

0.5

0

Figure 14. AT-31011 Noise Figure and
Associated Gain at VCE␣ = 2.7 V,
IC␣ =␣ 1␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)

Figure 12. AT-31011 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ = 1 V.

25

20

15

Ga

10

Ga (dBm)

NOISE FIGURE (dB)

5

0

-50

0 100

TEMPERATURE (°C)

NF

50

Figure 15. AT-31033 Noise Figure and
Associated Gain at VCE␣ = 2.7 V,
IC␣ =␣ 1␣ mA vs. Temperature in Test
Circuit, Figure 1. (Circuit Losses
De-embedded)

2.5

2.0

1.5

1.0

NOISE FIGURE (dB)

0.5

0

Figure 13. AT-31033 1 dB Compressed
Gain vs. Frequency and Current at
VCE␣ = 1 V.

0

-20

-40

IM3 (dBc)

-60

-80

IM3 (dBc)
IM5 (dBc)
IM7 (dBc)

-9

-3 0

-6 6

POWER PER TONE (dBm)

3

Figure 16. AT-31011 and AT-31033
Intermodulation Products vs. Output
Power at VCE␣ = 2.7 V, IC␣ = 10 mA,
900␣ MHz with Optimal Tuning.

4-36

AT-31011 Typical Scattering Parameters, V

GAIN (dB)

0

0

FREQUENCY (GHz)

23

30

15

10

4

20

MSG

MAG

S21

MSG

Freq. S

11

S

21

= 1 V, IC = 1 mA, Common Emitter, Z

CE

S

12

= 50 Ω

O

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.95 -8 11.12 3.60 174 -37.91 0.01 85 0.999 -3

0.5 0.92 -34 10.58 3.38 150 -24.67 0.06 68 0.94 -15

0.9 0.81 -60 9.74 3.07 130 -20.67 0.09 53 0.89 -25

1.0 0.79 -66 9.33 2.93 125 -20.03 0.10 50 0.88 -27

1.5 0.66 -94 8.02 2.52 104 -18.34 0.12 36 0.80 -36

1.8 0.60 -110 7.18 2.28 93 -17.95 0.13 30 0.76 -40

2.0 0.57 -119 6.76 2.18 87 -17.73 0.13 27 0.74 -42

2.4 0.51 -139 5.56 1.90 74 -17.69 0.13 22 0.71 -46

3.0 0.45 -167 4.22 1.63 57 -17.95 0.13 19 0.67 -51

4.0 0.45 153 2.30 1.30 36 -18.33 0.12 22 0.64 -62

5.0 0.49 120 0.73 1.09 17 -17.33 0.14 32 0.62 -72

AT-31011 Typical Noise Parameters,

30

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 0.6 0.85 29 0.73

1.8 1.1 0.68 67 0.46

2.4 1.6 0.55 98 0.28

Notes:

1. Matching constraints may make F
unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

= 50 Ω, 1 V, I

O

[1]

min

= 1 mA

C

Γ

OPT

0.5 0.90 13 0.85

values associated with high |Γ

min

OPT

| values

R

n

20

MSG

GAIN (dB)

10

S21

0

0

Figure 17. AT-31011 Gains vs.
Frequency at VCE␣ = 1 V, IC␣ = 1 mA.

23

15

FREQUENCY (GHz)

S

22

MAG

4

AT-31033 Typical Scattering Parameters, V

Freq. S

11

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.94 -7 11.16 3.61 173 -35.95 0.02 85 0.999 -3

0.5 0.87 -34 10.37 3.30 144 -22.84 0.07 68 0.92 -17

0.9 0.70 -58 9.17 2.87 121 -19.06 0.11 56 0.85 -27

1.0 0.66 -64 8.69 2.72 115 -18.49 0.12 53 0.83 -29

1.5 0.46 -90 7.11 2.27 92 -16.94 0.14 45 0.74 -37

1.8 0.36 -106 6.16 2.03 81 -16.40 0.15 43 0.70 -40

2.0 0.31 -117 5.66 1.92 74 -16.06 0.16 42 0.68 -42

2.4 0.22 -143 4.48 1.67 62 -15.50 0.17 42 0.66 -45

3.0 0.16 166 3.19 1.44 46 -14.34 0.19 44 0.63 -50

4.0 0.23 101 1.39 1.17 25 -11.85 0.26 46 0.60 -62

5.0 0.33 67 0.05 1.01 9 -9.11 0.35 41 0.56 -77

S

AT-31033 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 0.6 0.82 28 0.60

1.8 1.1 0.57 68 0.38

2.4 1.6 0.41 100 0.22

Notes:

1. Matching constraints may make F
unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

= 50 Ω, 1 V, I

O

[1]

min

= 1 mA

C

Γ

0.5 0.90 12 0.70

values associated with high |Γ

min

21

OPT

= 1 V, IC = 1 mA, Common Emitter, Z

CE

S

12

R

n

| values

OPT

Figure 18. AT-31033 Gains vs.

4-37

Frequency at VCE␣ = 1 V, IC␣ = 1 mA.

= 50 Ω

O

S

22

AT-31011 Typical Scattering Parameters, V

GAIN (dB)

0

0

FREQUENCY (GHz)

23

30

15

10

4

20

MSG

MAG

S21

GAIN (dB)

0

0

FREQUENCY (GHz)

23

30

15

10

4

20

MSG

MAG

S21

MSG

Freq. S

11

S

21

= 2.7 V, IC = 1 mA, Common Emitter, Z

CE

S

12

= 50 Ω

O

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.96 -7 11.11 3.59 174 -39.92 0.01 86 0.999 -2

0.5 0.93 -32 10.66 3.41 152 -26.43 0.05 69 0.95 -13

0.9 0.83 -56 9.90 3.13 132 -22.32 0.08 55 0.91 -22

1.0 0.81 -61 9.53 2.99 128 -21.66 0.08 53 0.90 -24

1.5 0.68 -89 8.32 2.61 107 -19.90 0.10 40 0.84 -32

1.8 0.62 -104 7.52 2.38 96 -19.46 0.11 34 0.80 -36

2.0 0.58 -113 7.15 2.28 90 -19.24 0.11 31 0.78 -38

2.4 0.52 -133 5.98 1.99 77 -19.15 0.11 27 0.75 -42

3.0 0.45 -160 4.65 1.71 61 -19.37 0.11 25 0.72 -46

4.0 0.43 158 2.75 1.37 39 -19.60 0.10 29 0.69 -56

5.0 0.46 123 1.16 1.14 20 -18.16 0.12 41 0.68 -66

AT-31011 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 0.6 0.85 29 0.73

1.8 1.1 0.68 67 0.46

2.4 1.6 0.55 98 0.28

Notes:

1. Matching constraints may make F
unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

= 50 Ω, 2.7 V, I

O

[1]

min

= 1 mA

C

Γ

OPT

0.5 0.92 13 0.85

values associated with high |Γ

min

OPT

| values

R

n

Figure 19. AT-31011 Gains vs.
Frequency at VCE␣ = 2.7 V, IC␣ = 1 mA.

S

22

AT-31033 Typical Scattering Parameters, V

Freq. S

11

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.94 -7 11.07 3.58 173 -37.44 0.01 86 0.999 -3

0.5 0.89 -32 10.35 3.29 146 -24.11 0.06 70 0.94 -15

0.9 0.72 -54 9.27 2.91 123 -20.27 0.10 58 0.87 -25

1.0 0.69 -59 8.80 2.76 118 -19.65 0.10 56 0.86 -26

1.5 0.48 -83 7.32 2.32 95 -18.01 0.13 48 0.78 -33

1.8 0.38 -97 6.39 2.09 84 -17.43 0.13 46 0.74 -36

2.0 0.33 -107 5.91 1.97 77 -17.07 0.14 45 0.72 -38

2.4 0.23 -130 4.73 1.72 65 -16.46 0.15 46 0.70 -41

3.0 0.14 -178 3.43 1.48 49 -15.25 0.17 48 0.67 -46

4.0 0.19 103 1.62 1.21 28 -12.62 0.23 51 0.65 -57

5.0 0.30 67 0.25 1.03 12 -9.72 0.33 47 0.63 -71

S

AT-31033 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 0.6 0.82 28 0.60

1.8 1.1 0.57 68 0.38

2.4 1.6 0.41 100 0.22

Notes:

1. Matching constraints may make F
unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

= 50 Ω, 2.7 V, I

O

[1]

min

= 1 mA

C

Γ

0.5 0.90 12 0.70

values associated with high |Γ

min

21

OPT

= 2.7 V, IC = 1 mA, Common Emitter, Z

CE

S

12

R

n

| values

OPT

Figure 20. AT-31033 Gains vs.

4-38

Frequency at VCE␣ = 2 .7 V, IC␣ = 1 mA.

= 50 Ω

O

S

22

AT-31011 Typical Scattering Parameters, V

Freq. S

11

S

21

= 2.7 V, IC = 10 mA, Common Emitter, Z

CE

S

12

= 50 Ω

O

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.74 -23 27.42 23.49 161 -41.00 0.01 77 0.95 -9

0.5 0.46 -85 22.65 13.57 116 -30.64 0.03 59 0.68 -24

0.9 0.32 -121 18.73 8.64 97 -27.55 0.04 59 0.59 -27

1.0 0.30 -128 17.91 7.86 93 -27.05 0.04 59 0.58 -27

1.5 0.25 -161 14.77 5.48 79 -24.48 0.06 61 0.55 -30

1.8 0.25 -177 13.29 4.62 72 -23.26 0.07 61 0.54 -32

2.0 0.24 174 12.42 4.18 68 -22.51 0.07 61 0.53 -33

2.4 0.25 157 10.97 3.54 60 -21.12 0.09 59 0.53 -36

3.0 0.27 138 9.11 2.86 49 -19.31 0.11 58 0.52 -40

4.0 0.31 113 6.86 2.20 33 -16.88 0.14 54 0.51 -50

5.0 0.37 94 5.19 1.82 17 -14.75 0.18 48 0.50 -59

AT-31011 Typical Noise Parameters,

30

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 1.4 0.37 33 0.46

1.8 1.7 0.25 86 0.29

2.4 2.0 0.18 129 0.18

Notes:

1. Matching constraints may make F
unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

= 50 Ω, 2.7 V, I

O

[1]

min

= 10 mA

C

Γ

OPT

1.3 0.45 11 0.55

values associated with high |Γ

min

OPT

| values

MSG

R

n

20

GAIN (dB)

10

0

0

15

Figure 21. AT-31011 Gains vs.
Frequency at VCE␣ = 2.7 V, IC␣ = 10 mA.

S21

23

FREQUENCY (GHz)

S

22

MAG

MSG

4

AT-31033 Typical Scattering Parameters, V

Freq. S

11

S

21

= 2.7 V, IC = 10 mA, Common Emitter, Z

CE

S

12

O

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.72 -21 26.80 21.87 154 -38.46 0.01 80 0.92 -10

0.5 0.33 -49 19.93 9.92 106 -27.31 0.04 73 0.66 -20

0.9 0.19 -47 15.51 5.96 88 -22.90 0.07 72 0.61 -22

1.0 0.17 -46 14.66 5.41 85 -22.03 0.08 72 0.60 -23

1.5 0.11 -28 11.44 3.73 72 -18.74 0.12 69 0.59 -27

1.8 0.10 -14 9.99 3.16 66 -17.26 0.14 67 0.58 -30

2.0 0.10 -6 9.15 2.87 62 -16.40 0.15 65 0.58 -32

2.4 0.10 9 7.78 2.45 54 -14.88 0.18 62 0.57 -35

3.0 0.12 23 6.16 2.03 43 -12.99 0.22 57 0.55 -41

4.0 0.15 34 4.30 1.64 27 -10.49 0.30 48 0.52 -53

5.0 0.20 36 3.01 1.41 12 -8.53 0.37 38 0.48 -65

AT-31033 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 1.4 0.31 30 0.34

1.8 1.7 0.16 80 0.23

= 50 Ω, 2.7 V, I

O

[1]

min

= 10 mA

C

Γ

OPT

1.3 0.42 10 0.38

R

n

30

20

GAIN (dB)

10

MSG

MAG

MSG

MAG

S21

2.4 2.0 0.08 118 0.17

Notes:

1. Matching constraints may make F

unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

values associated with high |Γ

min

OPT

4-39

| values

0

0

Figure 22. AT-31033 Gains vs.
Frequency at VCE␣ = 2.7 V, IC␣ = 10 mA.

23

15

FREQUENCY (GHz)

= 50 Ω

S

22

4

MSG

AT-31011 Typical Scattering Parameters, V

Freq. S

11

S

21

= 5 V, IC = 1 mA, Common Emitter, Z

CE

S

12

= 50 Ω

O

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.96 -7 11.10 3.59 174 -40.35 0.01 84 0.999 -2

0.5 0.94 -31 10.67 3.41 153 -26.95 0.04 69 0.96 -13

0.9 0.83 -54 9.93 3.14 133 -22.80 0.07 56 0.92 -22

1.0 0.81 -60 9.57 3.01 129 -22.18 0.08 53 0.91 -23

1.5 0.68 -86 8.41 2.63 108 -20.33 0.10 41 0.85 -31

1.8 0.62 -101 7.62 2.40 97 -19.85 0.10 35 0.81 -35

2.0 0.58 -110 7.27 2.31 91 -19.64 0.10 32 0.79 -37

2.4 0.52 -129 6.10 2.02 78 -19.50 0.11 28 0.76 -41

3.0 0.44 -157 4.78 1.73 62 -19.68 0.10 26 0.73 -45

4.0 0.42 161 2.90 1.40 40 -19.86 0.10 31 0.70 -55

5.0 0.45 125 1.33 1.17 21 -18.35 0.12 43 0.70 -65

30

AT-31011 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 0.6 0.85 29 0.73

1.8 1.1 0.68 67 0.46

2.4 1.6 0.55 98 0.28

Notes:

1. Matching constraints may make F
unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

AT-31033 Typical Scattering Parameters, V

Freq. S

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.95 -7 10.93 3.52 173 -37.78 0.01 85 0.999 -3

0.5 0.89 -31 10.24 3.25 147 -24.43 0.06 70 0.94 -15

0.9 0.73 -52 9.20 2.88 124 -20.49 0.09 59 0.88 -24

1.0 0.70 -57 8.75 2.74 119 -19.91 0.10 57 0.87 -26

1.5 0.49 -80 7.30 2.32 96 -18.15 0.12 49 0.79 -32

1.8 0.39 -93 6.41 2.09 85 -17.54 0.13 47 0.75 -36

2.0 0.34 -102 5.93 1.98 78 -17.19 0.14 46 0.73 -37

2.4 0.23 -122 4.77 1.73 66 -16.55 0.15 46 0.71 -40

3.0 0.13 -166 3.49 1.49 50 -15.35 0.17 49 0.68 -45

4.0 0.17 107 1.71 1.22 29 -12.83 0.23 51 0.66 -56

5.0 0.28 68 0.32 1.04 12 -9.96 0.32 48 0.64 -69

AT-31033 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 0.6 0.82 28 0.60

1.8 1.1 0.57 68 0.38

2.4 1.6 0.41 100 0.22

Notes:

1. Matching constraints may make F
unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

= 50 Ω, 5 V, I

O

[1]

min

= 1 mA

C

Γ

OPT

0.5 0.92 13 0.85

min

11

= 50 Ω, 5 V, I

O

[1]

min

values associated with high |Γ

S

21

= 1 mA

C

Γ

OPT

| values

OPT

= 5 V, IC = 1 mA, Common Emitter, Z

CE

0.5 0.90 12 0.70

values associated with high |Γ

min

OPT

| values

4-40

R

n

R

n

20

MSG

GAIN (dB)

10

S21

0

0

Figure 23. AT-31011 Gains vs.
Frequency at VCE␣ = 5 V, IC␣ = 1 mA.

S

12

30

20

GAIN (dB)

10

0

0

Figure 24. AT-31033 Gains vs.
Frequency at VCE␣ = 5 V, IC␣ = 1 mA.

23

15

FREQUENCY (GHz)

= 50 Ω

O

MSG

S21

23

15

FREQUENCY (GHz)

S

22

S

22

MAG

MAG

4

MSG

4

GAIN (dB)

0

0

FREQUENCY (GHz)

23

30

15

10

4

20

MSG

MAG

S21

MSG

AT-31011 Typical Scattering Parameters, V

Freq. S

11

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.77 -21 27.41 23.46 162 -41.49 0.01 80 0.95 -8

0.5 0.48 -77 22.97 14.07 118 -30.66 0.03 61 0.70 -24

0.9 0.32 -112 19.14 9.06 98 -27.77 0.04 59 0.61 -27

1.0 0.30 -119 18.34 8.26 95 -27.11 0.04 60 0.59 -27

1.5 0.23 -151 15.23 5.78 80 -24.56 0.06 60 0.56 -29

1.8 0.22 -168 13.75 4.87 73 -23.37 0.07 60 0.55 -31

2.0 0.21 -178 12.91 4.42 69 -22.62 0.07 60 0.55 -32

2.4 0.21 163 11.46 3.74 61 -21.25 0.09 59 0.54 -36

3.0 0.23 142 9.60 3.02 50 -19.45 0.11 58 0.53 -39

4.0 0.27 116 7.36 2.33 34 -17.08 0.14 54 0.52 -48

5.0 0.33 96 5.70 1.93 19 -14.97 0.18 48 0.51 -58

S

AT-31011 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang

[2]

0.5

0.9 1.4 0.37 33 0.46

1.8 1.7 0.25 86 0.29

2.4 2.0 0.18 129 0.18

Notes:

1. Matching constraints may make F
unachievable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

= 50 Ω, 5 V, I

O

[1]

min

= 10 mA

C

Γ

1.3 0.45 11 0.55

values associated with high |Γ

min

AT-31033 Typical Scattering Parameters, V

Freq. S

11

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 0.75 -19 26.79 21.84 155 -38.82 0.01 79 0.92 -10

0.5 0.37 -45 20.17 10.20 107 -27.39 0.04 73 0.67 -20

0.9 0.23 -42 15.79 6.16 90 -23.00 0.07 72 0.62 -22

1.0 0.21 -42 14.94 5.58 86 -22.11 0.08 72 0.61 -23

1.5 0.15 -30 11.75 3.87 73 -18.86 0.11 69 0.60 -27

1.8 0.14 -21 10.30 3.27 67 -17.37 0.14 66 0.59 -29

2.0 0.13 -17 9.47 2.97 63 -16.51 0.15 65 0.58 -31

2.4 0.13 -7 8.08 2.54 55 -15.00 0.18 62 0.57 -35

3.0 0.13 3 6.47 2.11 45 -13.14 0.22 57 0.56 -41

4.0 0.14 19 4.61 1.7 29 -10.67 0.29 48 0.53 -52

5.0 0.18 28 3.33 1.47 14 -8.73 0.37 38 0.49 -64

S

AT-31033 Typical Noise Parameters,

Common Emitter, Z

Freq F

GHz dB Mag Ang -

0.5

[2]

0.9 1.4 0.31 30 0.34

1.8 1.7 0.16 80 0.23

2.4 2.0 0.08 118 0.17

Notes:

1. Matching constraints may make F
unacheivable in physical circuits. See Figure 2 for expected performance.

2. 0.5 GHz noise parameter values are extrapolated, not measured.

= 50 Ω, 5 V, I

O

[1]

min

= 10 mA

C

Γ

1.3 0.42 10 0.38

values associated with high |Γ

min

21

OPT

21

OPT

= 5 V, IC = 10 mA, Common Emitter, Z

CE

S

12

R

n

| values

OPT

Figure 25. AT-31011 Gains vs.
Frequency at VCE␣ = 5 V, IC␣ = 10 mA.

= 5 V, IC = 10 mA, Common Emitter, Z

CE

S

12

30

20

GAIN (dB)

10

0

0

Figure 26. AT-31033 Gains vs.
Frequency at VCE␣ = 5 V, IC␣ = 10 mA.

OPT

4-41

| values

R

n

= 50 Ω

O

S

22

= 50 Ω

O

S

22

MSG

MAG

S21

23

15

FREQUENCY (GHz)

MSG

4

Ordering Information

Part Number Increment Comments

AT-31011-BLK 100 Bulk

AT-31011-TR1 3000 7 " Reel

AT-31033-BLK 100 Bulk

AT-31033-TR1 3000 7 " Reel

Package Dimensions

SOT-23 Plastic Package

1.02 (0.040)

0.89 (0.035)

PACKAGE
MARKING
CODE

0.60 (0.024)

0.45 (0.018)

BE

2.04 (0.080)

1.78 (0.070)

C

XXX

TOP VIEW

0.54 (0.021)

0.37 (0.015)

1.40 (0.055)

1.20 (0.047)

2.65 (0.104)

2.10 (0.083)

3.06 (0.120)

2.80 (0.110)

0.10 (0.004)

0.013 (0.0005)

SIDE VIEW END VIEW

DIMENSIONS ARE IN MILLIMETERS (INCHES)

SOT-143 Plastic Package

PACKAGE
MARKING
CODE

E

C

XXX

B

0.60 (0.024)

0.45 (0.018)

2.04 (0.080)

1.78 (0.070)

3.06 (0.120)

2.80 (0.110)

E

1.02 (0.041)

0.85 (0.033)

0.92 (0.036)

0.78 (0.031)

1.40 (0.055)

1.20 (0.047)

0.54 (0.021)

0.37 (0.015)

1.02 (0.041)

0.85 (0.033)

0.152 (0.006)

0.066 (0.003)

2.65 (0.104)

2.10 (0.083)

0.15 (0.006)

0.09 (0.003)

0.69 (0.027)

0.45 (0.018)

0.10 (0.004)

0.013 (0.0005)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

4-42

0.69 (0.027)

0.45 (0.018)