The descriptions of the pins are listed in Table 2-1.
Table 2-1. Pin Function Table
Name8-Lead SOIC8-Lead TSSOP8-Pad UDFN
CS1111Chip Select
SO2222Serial Data Output
(2)
WP
GND4444Ground
SI5555Serial Data Input
SCK6666Serial Data Clock
(2)
HOLD
V
CC
Note:
1.The exposed pad on this package can be connected to GND or left floating.
2.The Write-Protect (WP) and Hold (HOLD) pins should be driven high or low as appropriate.
3333Write-Protect
7777Suspends Serial Input
8888Device Power Supply
AT25128B/AT25256B
(1)
8-Ball VFBGA Function
Pin Description
2.1 Chip Select (CS)
The AT25128B/AT25256B is selected when the Chip Select (CS) pin is low. When the device is not
selected, data will not be accepted via the Serial Data Input (SI) pin, and the Serial Output (SO) pin will
remain in a high-impedance state.
To ensure robust operation, the CS pin should follow VCC upon power-up. It is therefore recommended to
connect CS to VCC using a pull-up resistor (less than or equal to 10 kΩ). After power-up, a low level on
CS is required prior to any sequence being initiated.
2.2 Serial Data Output (SO)
The Serial Data Output (SO) pin is used to transfer data out of the AT25128B/AT25256B. During a read
sequence, data is shifted out on this pin after the falling edge of the Serial Data Clock (SCK).
2.3 Write-Protect (WP)
The Write-Protect (WP) pin will allow normal read/write operations when held high. When the WP pin is
brought low and WPEN bit is set to a logic ‘1’, all write operations to the STATUS register are inhibited.
WP going low while CS is still low will interrupt a write operation to the STATUS register. If the internal
write cycle has already been initiated, WP going low will have no effect on any write operation to the
STATUS register. The WP pin function is blocked when the WPEN bit in the STATUS register is set to a
logic ‘0’. This will allow the user to install the AT25128B/AT25256B in a system with the WP pin tied to
ground and still be able to write to the STATUS register. All WP pin functions are enabled when the
WPEN bit is set to a logic ‘1’.
2.4 Ground (GND)
The ground reference for the Device Power Supply (VCC). The Ground (GND) pin should be connected to
the system ground.
The Serial Data Input (SI) pin is used to transfer data into the device. It receives instructions, addresses
and data. Data is latched on the rising edge of the Serial Data Clock (SCK).
2.6 Serial Data Clock (SCK)
The Serial Data Clock (SCK) pin is used to synchronize the communication between a master and the
AT25128B/AT25256B. Instructions, addresses or data present on the Serial Data Input (SI) pin is latched
in on the rising edge of SCK, while output on the Serial Data Output (SO) pin is clocked out on the falling
edge of SCK.
2.7 Suspend Serial Input (HOLD)
The Suspend Serial Input (HOLD) pin is used in conjunction with the Chip Select (CS) pin to pause the
AT25128B/AT25256B. When the device is selected and a serial sequence is underway, HOLD can be
used to pause the serial communication with the master device without resetting the serial sequence. To
pause, the HOLD pin must be brought low while the Serial Data Clock (SCK) pin is low. To resume serial
communication, the HOLD pin is brought high while the SCK pin is low (SCK may still toggle during
HOLD). Inputs to the Serial Data Input (SI) pin will be ignored while the Serial Data Output (SO) pin will
be in the high‑impedance state.
AT25128B/AT25256B
Pin Description
2.8 Device Power Supply (VCC)
The Device Power Supply (VCC) pin is used to supply the source voltage to the device. Operations at
invalid VCC voltages may produce spurious results and should not be attempted.
The AT25128B/AT25256B provides 131,072/262,144 bits of Serial Electrically Erasable and
Programmable Read-Only Memory (EEPROM) organized as 16,384/32,768 words of 8 bits each.
The device is optimized for use in many industrial and commercial applications where low‑power and
low‑voltage operation are essential. The device is available in space-saving 8‑lead SOIC, 8‑lead TSSOP,
8‑pad UDFN and 8‑ball VFBGA packages. All packages operate from 1.8V to 5.5V.
Voltage on any pin with respect to ground-1.0V to +7.0V
AT25128B/AT25256B
Electrical Characteristics
V
CC
DC output current5.0 mA
ESD protection> 4 kV
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operation listings of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
4.2 DC and AC Operating Range
Table 4-1. DC and AC Operating Range
AT25128B/AT25256B
Operating Temperature (Case)Industrial Temperature Range-40°C to +85°C
VCC Power SupplyLow-Voltage Grade1.8V to 5.5V
4.3 DC Characteristics
Table 4-2. DC Characteristics
(1)
6.25V
ParameterSymbol Minimum Typical Maximum Units Conditions
During a power-up sequence, the VCC supplied to the AT25128B/AT25256B should monotonically rise
from GND to the minimum VCC level, as specified in Table 4-1, with a slew rate no faster than 0.1 V/µs.
4.6.1.1 Device Reset
To prevent inadvertent write operations or any other spurious events from occurring during a power-up
sequence, the AT25128B/AT25256B includes a Power-on Reset (POR) circuit. Upon power-up, the
device will not respond to any instructions until the VCC level crosses the internal voltage threshold (V
that brings the device out of Reset and into Standby mode.
The system designer must ensure the instructions are not sent to the device until the VCC supply has
reached a stable value greater than or equal to the minimum VCC level. Additionally, once the VCC is
greater than or equal to the minimum VCC level, the bus master must wait at least t
first instruction to the device. See Table 4-4 for the values associated with these power-up parameters.
(1)
Table 4-4. Power-Up Conditions
SymbolParameterMin. Max. Units
t
PUP
V
POR
t
POFF
Note:
Time required after VCC is stable before the device can accept instructions100-µs
Power-on Reset Threshold Voltage-1.5V
Minimum time at VCC = 0V between power cycles0.03-ms
1.These parameters are characterized but they are not 100% tested in production.
If an event occurs in the system where the VCC level supplied to the AT25128B/AT25256B drops below
the maximum V
first driving the VCC pin to GND in less than 1 ms, waiting at least the minimum t
POR
level specified, it is recommended that a full-power cycle sequence be performed by
performing a new power-up sequence in compliance with the requirements defined in this section.
1.Performance is determined through characterization and the qualification process.
4.6.4 Software Reset
The SPI interface of the AT25128B/AT25256B can be reset by toggling the CS input. If the CS line is
already in the active state, it must complete a transition from the inactive state (≥VIH) to the active state
(≤VIL) and then back to the inactive state (≥VIH) without sending clocks on the SCK line. Upon completion
of this sequence, the device will be ready to receive a new opcode on the SI line.
= 0V
OUT
= 1.0 MHz, VCC = 5.0V
SCK
1,000,000—Write Cycles
4.6.5 Device Default State at Power-Up
The AT25128B/AT25256B default state upon power-up consists of:
• Standby Power mode
• A high-to-low-level transition on CS is required to enter active state
• Write Enable Latch (WEL) bit in the STATUS register = 0
• Ready/Busy bit in the STATUS register = 0, indicating the device is ready to accept a new command
• Device is not selected
• Not in Hold condition
• WPEN, BP1 and BP0 bits in the STATUS register are unchanged from their previous state due to the
fact that they are nonvolatile values
4.6.6 Device Default Condition
The AT25128B/AT25256B is shipped from Microchip to the customer with the EEPROM array set to an all
FFh data pattern (logic ‘1’ state). The Write-Protect Enable bit in the STATUS register is set to logic ‘0’
(the ability of the EEPROM array to write is dictated by the values of the Block Write‑Protect bits while the
STATUS register’s ability to write is controlled by the WEL bit). The Block Write Protection bits in the
STATUS register are set to logic ‘0’ (no write protection selected).
The AT25128B/AT25256B is controlled by a set of instructions that are sent from a host controller,
commonly referred to as the SPI Master. The SPI Master communicates with the AT25128B/AT25256B
via the SPI bus which is comprised of four signal lines: Chip Select (CS), Serial Data Clock (SCK), Serial
Data Input (SI), and Serial Data Output (SO).
The SPI protocol defines a total of four modes of operation (Mode 0, 1, 2 or 3) with each mode differing in
respect to the SCK polarity and phase and how the polarity and phase control the flow of data on the SPI
bus. The AT25128B/AT25256B supports the two most common modes, SPI Modes 0 and 3. With SPI
Modes 0 and 3, data is always latched in on the rising edge of SCK and always output on the falling edge
of SCK. The only difference between SPI Modes 0 and 3 is the polarity of the SCK signal when in the
inactive state (when the SPI Master is in Standby mode and not transferring any data). SPI Mode 0 is
defined as a low SCK while CS is not asserted (at VCC) and SPI Mode 3 has SCK high in the inactive
state. The SCK Idle state must match when the CS is deasserted both before and after the
communication sequence in SPI Mode 0 and 3. The figures in this document depict Mode 0 with a solid
line on SCK while CS is inactive and Mode 3 with a dotted line.
Figure 5-1. SPI Mode 0 and Mode 3
AT25128B/AT25256B
Device Operation
5.1 Interfacing the AT25128B/AT25256B on the SPI Bus
Communication to and from the AT25128B/AT25256B must be initiated by the SPI Master device, such
as a microcontroller. The SPI Master device must generate the serial clock for the AT25128B/AT25256B
on the Serial Data Clock (SCK) pin. The AT25128B/AT25256B always operates as a slave due to the fact
that the SCK is always an input.
5.1.1 Selecting the Device
The AT25128B/AT25256B is selected when the Chip Select (CS) pin is low. When the device is not
selected, data will not be accepted via the Serial Data Input (SI) pin, and the Serial Data Output (SO) pin
will remain in a high‑impedance state.
5.1.2 Sending Data to the Device
The AT25128B/AT25256B uses the SI pin to receive information. All instructions, addresses and data
input bytes are clocked into the device with the Most Significant bit (MSb) first. The SI pin samples on the
first rising edge of the SCK line after the CS has been asserted.
Data output from the device is transmitted on the SO pin, with the MSb output first. The SO data is
latched on the first falling edge of SCK after the instruction has been clocked into the device, such as the
Read from Memory Array (READ) and Read STATUS Register (RDSR) instructions. See Read Sequence
for more details.
5.2 Device Opcodes
5.2.1 Serial Opcode
After the device is selected by driving CS low, the first byte will be received on the SI pin. This byte
contains the opcode that defines the operation to be performed. Refer to Table 6-1 for a list of all opcodes
that the AT25128B/AT25256B will respond to.
5.2.2 Invalid Opcode
If an invalid opcode is received, no data will be shifted into AT25128B/AT25256B and the SO pin will
remain in a high-impedance state until the falling edge of CS is detected again. This will reinitialize the
serial communication.
AT25128B/AT25256B
Device Operation
5.3 Hold Function
The Suspend Serial Input (HOLD) pin is used to pause the serial communication with the device without
having to stop or reset the clock sequence. The Hold mode, however, does not have an effect on the
internal write cycle. Therefore, if a write cycle is in progress, asserting the HOLD pin will not pause the
operation and the write cycle will continue to completion.
The Hold mode can only be entered while the CS pin is asserted. The Hold mode is activated by
asserting the HOLD pin during the SCK low pulse. If the HOLD pin is asserted during the SCK high pulse,
then the Hold mode will not be started until the beginning of the next SCK low pulse. The device will
remain in the Hold mode as long as the HOLD pin and CS pin are asserted.
While in Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin and the
SCK pin will be ignored. The Write-Protect (WP) pin, however, can still be asserted or deasserted while in
the Hold mode.
To end the Hold mode and resume serial communication, the HOLD pin must be deasserted during the
SCK low pulse. If the HOLD pin is deasserted during the SCK high pulse, then the Hold mode will not end
until the beginning of the next SCK low pulse.
If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may have been
started will be aborted and the device will reset the WEL bit in the STATUS register back to the logic ‘0’
state.
The Write-Protect (WP) pin will allow normal read and write operations when held high. When the WP pin
is brought low and WPEN bit is a logic ‘1’, all write operations to the STATUS register are inhibited. The
WP pin going low while CS is still low will interrupt a Write STATUS Register (WRSR). If the internal write
cycle has already been initiated, WP going low will have no effect on any write operation to the STATUS
register. The WP pin function is blocked when the WPEN bit in the STATUS register is a logic ‘0’. This will
allow the user to install the AT25128B/AT25256B device in a system with the
still be able to write to the STATUS register. All WP pin functions are enabled when the WPEN bit is set to
a logic ‘1’.
The AT25128B/AT25256B is designed to interface directly with the synchronous Serial Peripheral
Interface (SPI). The AT25128B/AT25256B utilizes an 8‑bit instruction register. The list of instructions and
their operation codes are contained in Table 6-1. All instructions, addresses and data are transferred with
the MSb first and start with a high‑to‑low CS transition.
Table 6-1. Instruction Set for the AT25128B/AT25256B
The AT25128B/AT25256B includes an 8‑bit STATUS register. The STATUS register bits modulate various
features of the device as shown in Table 6-2 and Table 6-3. These bits can be changed by specific
instructions that are detailed in the following sections.
Reads as zeros when the device is not in a write
cycle
1
Reads as ones when the device is in a write cycle
00
No array write protection (Factory Default)
01
Quarter array write protection (see Table 6-4)
10
Half array write protection (see Table 6-4)
11
Entire array write protection (see Table 6-4)
0
Device is not write enabled (Power-up Default)
1
Device is write enabled
DS20006193A-page 18
Page 19
SO
SCK
CS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
STATUS Register Data Out
High-Impedance
SI
MSB
RDSR Opcode (05h)
0 0 0 0 0 1 0 1
MSB
D7 D6 D5 D4 D3 D2 D1 D0
AT25128B/AT25256B
Device Commands and Addressing
...........continued
BitNameTypeDescription
0RDY/BSY Ready/Busy StatusR
6.2 Read STATUS Register (RDSR)
The Read STATUS Register (RDSR) instruction provides access to the STATUS register. The ready/busy
and write enable status of the device can be determined by the RDSR instruction. Similarly, the Block
Write Protection (BP<1:0>) bits indicate the extent of memory array protection employed. The STATUS
register is read by asserting the
completion of the opcode, the device will return the 8‑bit STATUS register value on the SO pin.
Figure 6-1. RDSR Waveform
CS pin, followed by sending in a 05h opcode on the SI pin. Upon
0
Device is ready for a new sequence
1
Device is busy with an internal operation
6.3 Write Enable (WREN) and Write Disable (WRDI)
Enabling and disabling writing to the STATUS register and EEPROM array is accomplished through the
Write Enable (WREN) instruction and the Write Disable (WRDI) instruction. These functions change the
status of the WEL bit in the STATUS register.
6.3.1 Write Enable Instruction (WREN)
The Write Enable Latch (WEL) bit of the STATUS register must be set to a logic ‘1’ prior to each Write
STATUS Register (WRSR) and Write to Memory Array (WRITE) instructions. This is accomplished by
sending a WREN (06h) instruction to the AT25128B/AT25256B. First, the
device and then a WREN instruction is clocked in on the SI pin. Then the CS pin can be driven high and
the WEL bit will be updated in the STATUS register to a logic ‘1’. The device will power‑up in the write
disable state (WEL = 0).
To protect the device against inadvertent writes, the Write Disable (WRDI) instruction (opcode 04h)
disables all programming modes by setting the WEL bit to a logic ‘0’. The WRDI instruction is independent
of the status of the WP pin.
Figure 6-3. WRDI Timing
AT25128B/AT25256B
Device Commands and Addressing
6.4 Write STATUS Register (WRSR)
The Write STATUS Register (WRSR) instruction enables the SPI Master to change selected bits of the
STATUS register. Before a WRSR instruction can be initiated, a WREN instruction must be executed to set
the WEL to logic ‘1’. Upon completion of a WREN instruction, a WRSR instruction can be executed.
Note: The WRSR instruction has no effect on bit 6, bit 5, bit 4, bit 1 and bit 0 of the STATUS register. Only
bit 7, bit 3 and bit 2 can be changed via the WRSR instruction. These modifiable bits are the Write Protect
Enable (WPEN) and Block Protect (BP<1:0>) bits. These three bits are nonvolatile bits that have the
same properties and functions as regular EEPROM cells. Their values are retained while power is
removed from the device.
The AT25128B/AT25256B will not respond to commands other than a RDSR after a WRSR instruction until
the self-timed internal write cycle has completed. When the write cycle is completed, the WEL bit in the
STATUS register is reset to logic ‘0’.
Figure 6-4. WRSR Waveform
Note:
1.This instruction initiates a self-timed internal write cycle (tWC) on the rising edge of CS after a valid
sequence.
6.4.1 Block Write-Protect Function
The WRSR instruction allows the user to select one of four possible combinations as to how the memory
array will be inhibited from writing through changing the Block Write-Protect bits (BP<1:0>). The four
levels of array protection are:
• None of the memory array is protected.
• Upper quarter (¼) address range is write-protected meaning the highest order address bits are read-
only.
• Upper half (½) address range is write-protected meaning the highest order address bits are read-
only.
• All of the memory array is write-protected meaning all address bits are read-only.
The Block Write Protection levels and corresponding STATUS register control bits are shown in Table 6-4.
Table 6-4. Block Write-Protect Bits
LevelSTATUS Register BitsWrite-Protected/Read‑Only Address Range
The WRSR instruction also allows the user to enable or disable the Write-Protect (WP) pin through the use
of the Write-Protect Enable (WPEN) bit. When the WPEN bit is set to logic ‘0’, the ability to write the
EEPROM array is dictated by the values of the Block Write-Protect (BP<1:0>) bits. The ability to write the
STATUS register is controlled by the WEL bit. When the WPEN bit is set to logic ‘1’, the STATUS register
is read-only.
AT25128B/AT25256B
Device Commands and Addressing
Hardware Write Protection is enabled when both the
logic ‘1’. When the device is Hardware Write‑Protected, writes to the STATUS register, including the Block
Write‑Protect , WEL and WPEN bits, and to the sections in the memory array selected by the Block
Write‑Protect bits are disabled. When Hardware Write Protection is enabled, writes are only allowed to
sections of the memory that are not block‑protected.
Hardware Write Protection is disabled when either the WP pin is high or the WPEN bit is a logic ‘0’. When
Hardware Write Protection is disabled, writes are only allowed to sections of the memory that are not
block‑protected. Refer to Table 6-5 for additional information.Note: When the WPEN bit is Hardware Write‑Protected, it cannot be set back to a logic ‘0’ as long as
Reading the AT25128B/AT25256B via the SO pin requires the following sequence. After the CS line is
pulled low to select a device, the READ (03h) instruction is transmitted via the SI line followed by the
16‑bit address to be read. Refer to Table 7-1 for the address bits for AT25128B/AT25256B.
Table 7-1. AT25128B/AT25256B Address Bits
AddressAT25128BAT25256B
AT25128B/AT25256B
Read Sequence
A
N
Don’t Care BitsA15–A
A13–A
14
0
A14–A
A
15
0
Upon completion of the 16‑bit address, any data on the SI line will be ignored. The data (D7‑D0) at the
specified address is then shifted out onto the SO line. If only one byte is to be read, the CS line should be
driven high after the data comes out. The read sequence can be continued since the byte address is
automatically incremented and data will continue to be shifted out. When the highest‑order address bit is
reached, the address counter will rollover to the lowest‑order address bit allowing the entire memory to be
read in one continuous read cycle regardless of the starting address.
In order to program the AT25128B/AT25256B, two separate instructions must be executed. First, the
device must be write enabled via the Write Enable (WREN) instruction. Then, one of the two possible write
sequences described in this section may be executed.
Note: If the device is not Write Enabled (WREN), the device will ignore the WRITE instruction and will
return to the standby state when CS is brought high. A new CS assertion is required to re‑initiate
communication.
The address of the memory location(s) to be programmed must be outside the protected address field
location selected by the block write protection level. During an internal write cycle, all commands will be
ignored except the RDSR instruction. Refer to Table 8-1 for the address bits for AT25128B/AT25256B.
Table 8-1. AT25128B/AT25256B Address Bits
AddressAT25128BAT25256B
AT25128B/AT25256B
Write Sequence
Don’t Care BitsA15–A
8.1 Byte Write
A Byte Write requires the following sequence and is depicted in Figure 8-1. After the CS line is pulled low
to select the device, the WRITE (02h) instruction is transmitted via the SI line followed by the 16‑bit
address and the data (D7‑D0) to be programmed. Programming will start after the CS pin is brought high.
The low‑to‑high transition of the CS pin must occur during the SCK low time (Mode 0) and SCK high time
(Mode 3) immediately after clocking in the D0 (LSB) data bit. The AT25128B/AT25256B is automatically
returned to the Write Disable state (STATUS register bit WEL = 0) at the completion of a write cycle.
Figure 8-1. Byte Write
A
N
A13–A
14
0
A14–A
A
15
0
Note:
1.This instruction initiates a self-timed internal write cycle (tWC) on the rising edge of CS after a valid
sequence.
A Page Write sequence allows up to 64 bytes to be written in the same write cycle, provided that all bytes
are in the same row of the memory array. Partial Page Writes of less than 64 bytes are allowed. After
each byte of data is received, the six lowest order address bits are internally incremented following the
receipt of each data byte. The higher order address bits are not incremented and retain the memory array
page location. If more bytes of data are transmitted that what will fit to the end of that memory row, the
address counter will rollover to the beginning of the same row. Nevertheless, creating a rollover event
should be avoided as previously loaded data in the page could become unintentionally altered. The
AT25128B/AT25256B is automatically returned to the Write Disable state (WEL = 0) at the completion of
a write cycle.
Figure 8-2. Page Write
AT25128B/AT25256B
Write Sequence
Note:
1.This instruction initiates a self‑timed internal write cycle (tWC) on the rising edge of CS after a valid
sequence.
8.3 Polling Routine
A polling routine can be implemented to optimize time‑sensitive applications that would not prefer to wait
the fixed maximum write cycle time (tWC). This method allows the application to know immediately when
the write cycle has completed to start a subsequent operation.
Once the internally-timed write cycle has started, a polling routine can be initiated. This involves
repeatedly sending Read STATUS Register (RDSR) instruction to determine if the device has completed
its self-timed internal write cycle. If the RDY/BSY bit (bit 0 of STATUS register) = 1, the write cycle is still
in progress. If bit 0 = 0, the write cycle has ended. If the RDY/BSY bit = 1, repeated RDSR commands can
be executed until the RDY/BSY bit = 0, signaling that the device is ready to execute a new instruction.
Only the Read STATUS Register (RDSR) instruction is enabled during the write cycle.
Updated to the Microchip template. Microchip DS20006193 replaces Atmel document 8698. Updated Part
Marking Information. Added ESD rating. Removed lead finish designation. Added POR recommendations
section. Updated trace code format in package markings. Updated section content throughout for
clarification. Updated the SOIC, TSSOP, and UDFN package drawings to the Microchip equivalents.
Atmel Document 8698 Revision E (January 2015)
Added the UDFN Expanded Quantity Option and ordering information. Updated the 8MA2 package
outline drawing.
Atmel Document 8698 Revision D (July 2014)
Updated part markings, 8MA2 and 8U2-1 package drawings, package 8A2 to 8X, template, logos, and
disclaimer page. No change to functional specification.
Atmel Document 8698 Revision C (August 2011)
Updated 8A2 and 8S1 package drawings. Corrected page 13, Device Density from 156K to 256K.
Corrected page 9, table headings. Corrected cross references on pages 7, 8, and 9.
AT25128B/AT25256B
Revision History
Atmel Document 8698 Revision B (March 2010)
Updated Catalog Numbering Scheme. Updated Ordering Information and package types.
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Trademarks
The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BitCloud,
chipKIT, chipKIT logo, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq,
Kleer, LANCheck, LINK MD, maXStylus, maXTouch, MediaLB, megaAVR, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, picoPower, PICSTART, PIC32 logo, Prochip Designer, QTouch, SAM-BA, SpyNIC, SST,
SST Logo, SuperFlash, tinyAVR, UNI/O, and XMEGA are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight
Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are
trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their respective companies.
2019, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
ISBN: 978-1-5224-4457-2
Quality Management System Certified by DNV
ISO/TS 16949
Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer
fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC
DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design and manufacture of development
systems is ISO 9001:2000 certified.