The Microchip Website.................................................................................................................................35
The descriptions of the pins are listed in Table 2-1.
Table 2-1. Pin Function Table
Name8-Lead SOIC8-Lead TSSOP8-Pad UDFN
CS1111Chip Select
SO2222Serial Data Output
(2)
WP
GND4444Ground
SI5555Serial Data Input
SCK6666Serial Data Clock
(2)
HOLD
V
CC
Note:
1.The exposed pad on this package can be connected to GND or left floating.
2.The Write-Protect (WP) and Hold (HOLD) pins should be driven high or low as appropriate.
3333Write-Protect
7777Suspends Serial Input
8888Device Power Supply
AT25010B/AT25020B/AT25040B
Pin Description
(1)
8-Ball VFBGAFunction
2.1 Chip Select (CS)
The AT25010B/AT25020B/AT25040B is selected when the Chip Select (CS) pin is low. When the device is not
selected, data will not be accepted via the Serial Data Input (SI) pin, and the Serial Output (SO) pin will remain in
a high‑impedance state.
To ensure robust operation, the
to VCC using a pull-up resistor (less than or equal to 10 kΩ). After power-up, a low level on CS is required prior to any
sequence being initiated.
2.2 Serial Data Output (SO)
The Serial Data Output (SO) pin is used to transfer data out of the AT25010B/AT25020B/AT25040B. During a read
sequence, data is shifted out on this pin after the falling edge of the Serial Data Clock (SCK).
2.3 Write-Protect (WP)
The Write-Protect (WP) pin will allow normal read/write operations when held high. When the WP pin is brought low,
all write operations are inhibited. WP going low while CS is still low will interrupt a write operation. If the internal write
cycle has already been initiated, WP going low will have no effect on any write operation.
2.4 Ground (GND)
The ground reference for the Device Power Supply (VCC). The Ground (GND) pin should be connected to the system
ground.
CS pin should follow VCC upon power-up. It is therefore recommended to connect CS
2.5 Serial Data Input (SI)
The Serial Data Input (SI) pin is used to transfer data into the device. It receives instructions, addresses and data.
Data is latched on the rising edge of the Serial Data Clock (SCK).
The Serial Data Clock (SCK) pin is used to synchronize the communication between a master and the AT25010B/
AT25020B/AT25040B. Instructions, addresses or data present on the Serial Data Input (SI) pin is latched in on the
rising edge of SCK, while output on the Serial Data Output (SO) pin is clocked out on the falling edge of SCK.
2.7 Suspend Serial Input (HOLD)
The Suspend Serial Input (HOLD) pin is used in conjunction with the Chip Select (CS) pin to pause the AT25010B/
AT25020B/AT25040B. When the device is selected and a serial sequence is underway, HOLD can be used to pause
the serial communication with the master device without resetting the serial sequence. To pause, the HOLD pin must
be brought low while the Serial Data Clock (SCK) pin is low. To resume serial communication, the HOLD pin is
brought high while the SCK pin is low (SCK may still toggle during HOLD). Inputs to the Serial Data Input (SI) pin will
be ignored while the Serial Data Output (SO) pin will be in the high‑impedance state.
2.8 Device Power Supply (VCC)
The Device Power Supply (VCC) pin is used to supply the source voltage to the device. Operations at invalid V
voltages may produce spurious results and should not be attempted.
The AT25010B/AT25020B/AT25040B provides 1,024/2,048/4,096 bits of Serial Electrically Erasable and
Programmable Read-Only Memory (EEPROM) organized as 128/256/512 words of 8 bits each. The device is
optimized for use in many industrial and commercial applications where low‑power and low‑voltage operation are
essential. The device is available in space-saving 8‑lead SOIC, 8‑lead TSSOP, 8‑pad UDFN and 8‑ball VFBGA
packages. All packages operate from 1.8V to 5.5V.
Voltage on any pin with respect to ground-1.0V to +7.0V
V
CC
DC output current5.0 mA
ESD protection> 4 kV
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
AT25010B/AT25020B/AT25040B
Electrical Characteristics
6.25V
4.2 DC and AC Operating Range
Table 4-1. DC and AC Operating Range
AT25010B/AT25020B/AT25040B
Operating Temperature (Case)Industrial Temperature Range-40°C to +85°C
1.Applicable over recommended operating range from TA = -40°C to +85°C, VCC = As Specified, CL = 1 TTL
Gate and 30 pF (unless otherwise noted).
4.5 SPI Synchronous Data Timimg
AT25010B/AT25020B/AT25040B
Electrical Characteristics
4.6 Electrical Specifications
4.6.1 Power-Up Requirements and Reset Behavior
During a power-up sequence, the VCC supplied to the AT25010B/AT25020B/AT25040B should monotonically rise
from GND to the minimum VCC level, as specified in Table 4-1, with a slew rate no faster than 0.1 V/µs.
4.6.1.1 Device Reset
To prevent inadvertent write operations or any other spurious events from occurring during a power-up sequence, the
AT25010B/AT25020B/AT25040B includes a Power-on Reset (POR) circuit. Upon power-up, the device will not
respond to any instructions until the VCC level crosses the internal voltage threshold (V
of Reset and into Standby mode.
The system designer must ensure the instructions are not sent to the device until the VCC supply has reached a
stable value greater than or equal to the minimum VCC level. Additionally, once the VCC is greater than or equal to the
minimum VCC level, the bus master must wait at least t
4-4 for the values associated with these power-up parameters.
(1)
Table 4-4. Power-Up Conditions
SymbolParameterMin. Max. Units
t
PUP
V
POR
t
POFF
Note:
1.These parameters are characterized but they are not 100% tested in production.
If an event occurs in the system where the VCC level supplied to the AT25010B/AT25020B/AT25040B drops below
the maximum V
1.Performance is determined through characterization and the qualification process.
4.6.4 Software Reset
The SPI interface of the AT25010B/AT25020B/AT25040B can be reset by toggling the CS input. If the CS line is
already in the Active state, it must complete a transition from the Inactive state (≥VIH) to the Active state (≤VIL) and
then back to the Inactive state (≥VIH) without sending clocks on the SCK line. Upon completion of this sequence, the
device will be ready to receive a new opcode on the SI line.
4.6.5 Device Default State at Power-Up
The AT25010B/AT25020B/AT25040B default state upon power-up consists of:
• Standby Power mode
• A high-to-low-level transition on CS is required to enter Active state
• Write Enable Latch (WEL) bit in the STATUS register = 0
• Ready/Busy bit in the STATUS register = 0, indicating the device is ready to accept a new command
• Device is not selected
• Not in Hold condition
• BP1 and BP0 bits in the STATUS register are unchanged from their previous state due to the fact that they are
nonvolatile values
4.6.6 Device Default Condition
The AT25010B/AT25020B/AT25040B is shipped from Microchip to the customer with the EEPROM array set to an all
FFh data pattern (logic ‘1’ state). The Block Write‑Protect bits in the STATUS register are set to logic ‘0’.
The AT25010B/AT25020B/AT25040B is controlled by a set of instructions that are sent from a host controller,
commonly referred to as the SPI Master. The SPI Master communicates with the AT25010B/AT25020B/AT25040B via
the SPI bus which is comprised of four signal lines: Chip Select (CS), Serial Data Clock (SCK), Serial Data Input (SI)
and Serial Data Output (SO).
The SPI protocol defines a total of four modes of operation (Mode 0, 1, 2 or 3) with each mode differing in respect to
the SCK polarity and phase and how the polarity and phase control the flow of data on the SPI bus. The AT25010B/
AT25020B/AT25040B supports the two most common modes, SPI Modes 0 and 3. With SPI Modes 0 and 3, data is
always latched in on the rising edge of SCK and always output on the falling edge of SCK. The only difference
between SPI Modes 0 and 3 is the polarity of the SCK signal when in the inactive state (when the SPI Master is in
Standby mode and not transferring any data). SPI Mode 0 is defined as a low SCK while
and SPI Mode 3 has SCK high in the inactive state. The SCK Idle state must match when the CS is deasserted both
before and after the communication sequence in SPI Mode 0 and 3. The figures in this document depict Mode 0 with
a solid line on SCK while CS is inactive and Mode 3 with a dotted line.
Figure 5-1. SPI Mode 0 and Mode 3
AT25010B/AT25020B/AT25040B
Device Operation
CS is not asserted (at VCC)
5.1 Interfacing the AT25010B/AT25020B/AT25040B on the SPI Bus
Communication to and from the AT25010B/AT25020B/AT25040B must be initiated by the SPI Master device, such as
a microcontroller. The SPI Master device must generate the serial clock for the AT25010B/AT25020B/AT25040B on
the Serial Data Clock (SCK) pin. The AT25010B/AT25020B/AT25040B always operates as a slave due to the fact that
the SCK is always an input.
5.1.1 Selecting the Device
The AT25010B/AT25020B/AT25040B is selected when the Chip Select (CS) pin is low. When the device is not
selected, data will not be accepted via the Serial Data Input (SI) pin, and the Serial Data Output (SO) pin will remain
in a high‑impedance state.
5.1.2 Sending Data to the Device
The AT25010B/AT25020B/AT25040B uses the SI pin to receive information. All instructions, addresses and data
input bytes are clocked into the device with the Most Significant bit (MSb) first. The SI pin samples on the first rising
edge of the SCK line after the CS has been asserted.
5.1.3 Receiving Data from the Device
Data output from the device is transmitted on the SO pin, with the MSb output first. The SO data is latched on the first
falling edge of SCK after the instruction has been clocked into the device, such as the Read from Memory Array
(READ) and Read STATUS Register (RDSR) instructions. See Read Sequence for more details.
After the device is selected by driving CS low, the first byte will be received on the SI pin. This byte contains the
opcode that defines the operation to be performed. Refer to Table 6-1 for a list of all opcodes that the AT25010B/
AT25020B/AT25040B will respond to.
5.2.2 Invalid Opcode
If an invalid opcode is received, no data will be shifted into AT25010B/AT25020B/AT25040B and the SO pin will
remain in a high‑impedance state until the falling edge of CS is detected again. This will reinitialize the serial
communication.
5.3 Hold Function
The Suspend Serial Input (HOLD) pin is used to pause the serial communication with the device without having to
stop or reset the clock sequence. The Hold mode, however, does not have an effect on the internal write cycle.
Therefore, if a write cycle is in progress, asserting the HOLD pin will not pause the operation and the write cycle will
continue to completion.
The Hold mode can only be entered while the
pin during the SCK low pulse. If the HOLD pin is asserted during the SCK high pulse, then the Hold mode will not be
started until the beginning of the next SCK low pulse. The device will remain in the Hold mode as long as the HOLD
pin and CS pin are asserted.
While in Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin and the SCK pin will be
ignored. The Write-Protect (WP) pin, however, can still be asserted or deasserted while in the Hold mode.
To end the Hold mode and resume serial communication, the
pulse. If the HOLD pin is deasserted during the SCK high pulse, then the Hold mode will not end until the beginning
of the next SCK low pulse.
If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may have been started will be
aborted and the device will reset the WEL bit in the STATUS register back to the logic ‘0’ state.
Figure 5-2. Hold Mode
AT25010B/AT25020B/AT25040B
Device Operation
CS pin is asserted. The Hold mode is activated by asserting the HOLD
The Write-Protect (WP) pin will allow normal read and write operations when held high. When the WP pin is brought
low, all write operations are inhibited. The WP pin going low while CS is still low will interrupt a write operation. If the
internal write cycle has already been initiated, WP going low will have no effect on any write operation.
The AT25010B/AT25020B/AT25040B is designed to interface directly with the synchronous Serial Peripheral
Interface (SPI). The AT25010B/AT25020B/AT25040B utilizes an 8‑bit instruction register. The list of instructions and
their operation codes are contained in Table 6-1. All instructions, addresses and data are transferred with the MSb
first and start with a high‑to‑low
Table 6-1. Instruction Set for the AT25010B/AT25020B/AT25040B
1.“A” represents the MSb address bit (A8) for the AT25040B and a “don't care” bit for the AT25010B and
AT25020B.
CS transition.
STATUS RegisterSet Write Enable Latch (WEL)
STATUS RegisterReset Write Enable Latch (WEL)
STATUS RegisterRead STATUS Register
STATUS RegisterWrite STATUS Register
Memory ArrayRead from Memory Array
Memory ArrayWrite to Memory Array
Device Commands and Addressing
6.1 STATUS Register Bit Definition and Function
The AT25010B/AT25020B/AT25040B includes an 8‑bit STATUS register. The STATUS register bits modulate various
features of the device as shown in Table 6-2 and Table 6-3. These bits can be changed by specific instructions that
are detailed in the following sections.
Table 6-2. STATUS Register Format
Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0
XXXXBP1BP0WELRDY/BSY
Table 6-3. STATUS Register Bit Definition
BitNameTypeDescription
7:4RFUReserved for Future UseR
3:2BP1
BP0
1WELWrite Enable LatchR
0RDY/BSY Ready/Busy StatusR
Block Write ProtectionR/W
0
Reads as zeros when the device is not in a write cycle
The Read STATUS Register (RDSR) instruction provides access to the STATUS register. The ready/busy and write
enable status of the device can be determined by the RDSR instruction. Similarly, the Block Write-Protect (BP1, BP0)
bits indicate the extent of memory array protection employed. The STATUS register is read by asserting the CS pin,
followed by sending in a 05h opcode on the SI pin. Upon completion of the opcode, the device will return the 8‑bit
STATUS register value on the SO pin.
Figure 6-1. RDSR Waveform
AT25010B/AT25020B/AT25040B
Device Commands and Addressing
6.3 Write Enable (WREN) and Write Disable (WRDI)
Enabling and disabling writing to the STATUS register and EEPROM array is accomplished through the Write Enable
(WREN) instruction and the Write Disable (WRDI) instruction. These functions change the status of the WEL bit in the
STATUS register.
6.3.1 Write Enable Instruction (WREN)
The Write Enable Latch (WEL) bit of the STATUS register must be set to a logic ‘1’ prior to each Write STATUS
Register (WRSR) and Write to Memory Array (WRITE) instructions. This is accomplished by sending a WREN (06h)
instruction to the AT25010B/AT25020B/AT25040B. First, the CS pin is driven low to select the device and then a
WREN instruction is clocked in on the SI pin. Then the CS pin can be driven high and the WEL bit will be updated in
the STATUS register to a logic ‘1’. The device will power‑up in the Write Disable state (WEL = 0). The WP pin must
be held high during a WREN instruction.
To protect the device against inadvertent writes, the Write Disable (WRDI) instruction (opcode 04h) disables all
programming modes by setting the WEL bit to a logic ‘0’. The WRDI instruction is independent of the status of the WP
pin.
Figure 6-3. WRDI Timing
AT25010B/AT25020B/AT25040B
Device Commands and Addressing
6.4 Write STATUS Register (WRSR)
The Write STATUS Register (WRSR) instruction enables the SPI Master to change selected bits of the STATUS
register. Before a WRSR instruction can be initiated, a WREN instruction must be executed to set the WEL bit to
logic ‘1’. Upon completion of a WREN instruction, a WRSR instruction can be executed.
Note: The WRSR instruction has no effect on bit 7, bit 6, bit 5, bit 4, bit 1 and bit 0 of the STATUS register. Only bit 3
and bit 2 can be changed via the WRSR instruction. These modifiable bits are the Block Protect (BP1, BP0) bits.
These bits are nonvolatile bits that have the same properties and functions as regular EEPROM cells. Their values
are retained while power is removed from the device.
The AT25010B/AT25020B/AT25040B will not respond to commands other than a RDSR after a WRSR instruction until
the self‑timed internal write cycle has completed. When the write cycle is completed, the WEL bit in the STATUS
register is reset to logic ‘0’.
1.This instruction initiates a self-timed internal write cycle (tWC) on the rising edge of CS after a valid sequence.
6.4.1 Block Write-Protect Function
The WRSR instruction allows the user to select one of four possible combinations as to how the memory array will be
inhibited from writing through changing the Block Write-Protect bits (BP1, BP0). The four levels of array protection
are:
• None of the memory array is protected.
• Upper quarter (¼) address range is write-protected meaning the highest order address bits are read-only.
• Upper half (½) address range is write-protected meaning the highest order address bits are read-only.
• All of the memory array is write-protected meaning all address bits are read-only.
The Block Write Protection levels and corresponding STATUS register control bits are shown in Table 6-4.
Table 6-4. Block Write-Protect Bits
AT25010B/AT25020B/AT25040B
Device Commands and Addressing
LevelSTATUS Register BitsWrite-Protected/Read‑Only Address Range
Reading the AT25010B/AT25020B/AT25040B via the SO pin requires the following sequence. After the CS line is
pulled low to select a device, the READ (03h) instruction (including A8 for the AT25040B) is transmitted via the SI line
followed by the 8‑bit address to be read (A7 - A0). Refer to Table 7-1 for the address bits for AT25010B/AT25020B/
AT25040B.
Upon completion of the 8‑bit address, any data on the SI line will be ignored. The data (D7‑D0) at the specified
address is then shifted out onto the SO line. If only one byte is to be read, the CS line should be driven high after the
data comes out. The read sequence can be continued since the byte address is automatically incremented and data
will continue to be shifted out. When the highest‑order address bit is reached, the address counter will rollover to the
lowest‑order address bit allowing the entire memory to be read in one continuous read cycle regardless of the starting
address.
Figure 7-1. Read Waveform
Note:
1.“A” represents the MSb address bit (A8) for the AT25040B and a “don’t care” bit for the AT25010B and
AT25020B.
In order to program the AT25010B/AT25020B/AT25040B, two separate instructions must be executed. First, the
device must be write enabled via the Write Enable (WREN) instruction. Then, one of the two possible write sequences
described in this section may be executed.
Note: If the
instruction and will return to the standby state when CS is brought high. A new CS assertion is required to re-initiate
communication.
The address of the memory location(s) to be programmed must be outside the protected address field location
selected by the block write protection level. During an internal write cycle, all commands will be ignored except the
RDSR instruction. Refer to Table 8-1 for the address bits for AT25010B/AT25020B/AT25040B.
WP pin is brought low or the device is not Write Enabled (WREN), the device will ignore the WRITE
AddressAT25010BAT25020BAT25040B
AT25010B/AT25020B/AT25040B
Write Sequence
Don’t Care BitsA
8.1 Byte Write
A byte write requires the following sequence and is depicted in Figure 8-1. After the CS line is pulled low to select the
device, the WRITE (02h) instruction (including A8 for the AT25040B) is transmitted via the SI line followed by the 8‑bit
address and the data (D7‑D0) to be programmed. Programming will start after the CS pin is brought high. The
low‑to‑high transition of the CS pin must occur during the SCK low time (Mode 0) and SCK high time (Mode 3)
immediately after clocking in the D0 (LSB) data bit. The AT25010B/AT25020B/AT25040B is automatically returned to
the Write Disable state (STATUS register bit WEL = 0) at the completion of a write cycle.
Figure 8-1. Byte Write
A
N
A6-A
0
7
A7-A
0
NoneNone
A8-A
0
Note:
1.This instruction initiates a self-timed internal write cycle (tWC) on the rising edge of CS after a valid sequence.
2.“A” represents the MSb address bit (A8) for the AT25040B and a “don’t care” bit for the AT25010B and
AT25020B.
8.2 Page Write
A page write sequence allows up to 8 bytes to be written in the same write cycle, provided that all bytes are in the
same row of the memory array. Partial page writes of less than 8 bytes are allowed. After each byte of data is
received, the three lowest order address bits are internally incremented following the receipt of each data byte. The
higher order address bits are not incremented and retain the memory array page location. If more bytes of data are
transmitted than will fit to the end of that memory row, the address counter will rollover to the beginning of the same
row. Nevertheless, creating a rollover event should be avoided as previously loaded data in the page could become
unintentionally altered. The AT25010B/AT25020B/AT25040B is automatically returned to the Write Disable state
(WEL = 0) at the completion of a write cycle.
Figure 8-2. Page Write
Note:
1.This instruction initiates a self‑timed internal write cycle (tWC) on the rising edge of CS after a valid sequence.
2.“A” represents the MSb address bit (A8) for the AT25040B and a “don’t care” bit for the AT25010B and
AT25020B.
8.3 Polling Routine
A polling routine can be implemented to optimize time‑sensitive applications that would not prefer to wait the fixed
maximum write cycle time (tWC). This method allows the application to know immediately when the write cycle has
completed to start a subsequent operation.
Once the internally-timed write cycle has started, a polling routine can be initiated. This involves repeatedly sending
Read STATUS Register (RDSR) instruction to determine if the device has completed its self-timed internal write cycle.
If the
RDY/BSY bit (bit 0 of STATUS register) = 1, the write cycle is still in progress. If bit 0 = 0, the write cycle has
ended. If the
the device is ready to execute a new instruction. Only the Read STATUS Register (RDSR) instruction is enabled
during the write cycle.
Figure 8-3. Polling Flowchart
RDY/BSY bit = 1, repeated RDSR commands can be executed until the RDY/BSY bit = 0, signaling that
Updated to Microchip template. Microchip DS20006251 replaces Atmel document 8707. Updated Part Marking
Information. Added ESD rating. Removed the 8‑pad XDFN detail and ordering code. Removed lead finish
designation. Added POR recommendations section. Updated trace code format in package markings. Updated
section content throughout for clarification. Updated the 8U3‑1 VFBGA package drawing. Updated the SOIC, TSSOP
and UDFN package drawings to the Microchip equivalents.
Atmel Document 8707 Revision F (January 2015)
Added the UDFN Expanded Quantity Option. Updated the 8MA2 package outline drawing and the ordering
information section.
Atmel Document 8707 Revision E (May 2014)
Updated part markings, package drawings, package 8A2 to 8X, template, logos, and disclaimer page. No change to
functional specification.
Atmel Document 8707 Revision D (April 2013)
Corrected WRSR waveform figure 4-5, bit 7 is not writable. Updated Atmel logos and disclaimer page.
AT25010B/AT25020B/AT25040B
Revision History
Atmel Document 8707 Revision C (June 2011)
Corrected AT25040B-SSHL marking detail. Replaced 8A2 package drawing with version E.
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when used in the intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these
methods, to our knowledge, require using the Microchip products in a manner outside the operating
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intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
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Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection
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