The AS7C34096A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as
524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are
desired.
Equal address access and cycle times (t
ideal for high-performance applications. The chip enable input CE
systems.
When CE
CMOS standby mode.
A write cycle is accomplished by asserting write enable (WE
on the rising edge of WE
only after outputs have been disabled with output enable (OE
A read cycle is accomplished by asserting output enable (OE
drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write
enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3V supply voltage. This device is available as
per industry standard 400-mil 36-pin SOJ and 44-pin TSOP 2 packages.
is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in
(write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins
, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 4/5/6/7 ns are
AA
permits easy memory expansion with multiple-bank memory
) and chip enable (CE). Data on the input pins I/O1–I/O8 is written
) or write enable (WE).
) and chip enable (CE), with write enable (WE) high. The chip
Absolute maximum ratings
ParameterSymbolMinMaxUnit
Voltage on V
Voltage on any pin relative to GNDV
Power dissipationP
Storage temperature (plastic)T
Temperature with V
DC current into output (low)I
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
relative to GNDV
CC
appliedT
CC
t1
t2
D
stg
bias
OUT
–0.5+5.0V
–0.5VCC +0.5V
–1.0W
–65+150°C
–55+125°C
–20mA
Truth table
CEWEOEDataMode
HXXHigh Z
LHHHigh Z
LHL
D
OUT
Standby (ISB, I
Output disable (I
Read (ICC)
SB1
CC
)
)
LLX
Key: X = Don’t care, L = Low, H = High
8/17/04, v. 2.1Alliance SemiconductorP. 2 of 9
D
IN
Write (ICC)
Page 3
®
Recommended operating condition
ParameterSymbolMinNominalMaxUnit
Supply voltageV
Input voltage
Ambient operating
temperature
*
V
min = –1.0V for pulse width less than 5ns.
IL
**
max = VCC + 2.0V for pulse width less than 5ns.
V
IH
commercialT
industrialT
(10/12/15/20)3.03.33.6V
CC
**
V
IH
*
V
IL
A
A
2.0–VCC + 0.5V
–0.5–0.8V
0– 70°C
–40–85°C
DC operating characteristics (over the operating range)1
ParameterSymbolTest conditions
Input leakage
current
Output leakage
current
Operating power
supply current
Standby power
supply current
Output voltage
|I
|I
I
I
V
V
LO
CC
I
SB
SB1
LI
OL
OH
|
|
V
= Max, VIN = GND to V
CC
= Max, CE = V
V
CC
V
= GND to V
OUT
VCC = Max, CE ≤ V
f = f
Max
, I
OUT
= 0mA
VCC = Max, CE ≥ V
CC
IH
CC
IL
Industrial
Commercial
f = f
IH,
Max
VCC = Max,
CE
≥ V
V
≤ 0.2V or VIN ≥ VCC – 0.2V,
IN
CC
– 0.2V,
f = 0
IOL = 8 mA, VCC = Min
IOH = –4 mA, VCC = Min
AS7C34096A
–10–12–15–20
UnitMin Max Min Max Min Max Min Max
–1–1–1–1µA
–1–1–1–1µA
–180–160–140–110mA
-170-150-130-100mA
–60–60–60–60mA
–8–8–8–8mA
–0.4–0.4–0.4–0.4 V
2.4–2.4–2.4–2.4– V
Capacitance (f = 1MHz, Ta = 25° C, VCC = NOMINAL)
2
ParameterSymbolSignalsTest conditionsMaxUnit
Input capacitanceC
I/O capacitanceC
8/17/04, v. 2.1Alliance SemiconductorP. 3 of 9
IN
I/O
A, CE, WE, OE
I/O
VIN = 0V5pF
= V
V
IN
= 0V7pF
OUT
Page 4
AS7C34096A
®
Read cycle (over the operating range)
ParameterSymbol
Read cycle time
Address access time
Chip enable (CE
Output enable (OE
) access time
) access time
Output hold from address change
CE
Low to output in low Z
CE
High to output in high Z
OE
Low to output in low Z
OE
High to output in high Z
Power up time
Power down time
) to write end
Address setup to write end
Address setup time
Write pulse width (OE
Write pulse width (OE
= high)
= low
Address hold from end of write
Write recovery time
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
- In put pulse level: GND to 3.0V. See Figures A and B.
- In put rise and fall times: 2 ns. See Figure A.
- In put and output timing reference levels: 1.5V.
t
t
WC
WP
t
DW
Data valid
AS7C34096A
®
t
WR
t
AH
t
DH
D
OUT
+3.3V
320
11
C
GND
Ω
+3.0V
GND
90%
10%
2 ns
Figure A: Input pulse
90%
10%
D
OUT
350
Ω
Figure B: 3.3V Output load
Notes
1During V
2This parameter is sampled, but not 100% tested.
3For test conditions, see AC Test Conditions.
4t
CLZ
5This parameter is guaranteed, but not tested.
6WE
7CE
and OE are LOW for read cycle.
8Address valid prior to or coincident with CE
9All read cycle timings are referenced from the last valid address to the first transitioning address.
10 All write cycle timings are referenced from the last valid address to the first transitioning address.
11 C=30pF, except on High Z and Low Z param eters, where C=5pF.
power-up, a pull-up resistor to V
CC
and t
is HIGH for read cycle.
are specified with CL = 5pF as in Figure B. Transition is measured ±500 mV from steady-state voltage.