Datasheet AS7C256, AS7C256L Datasheet (Alliance Semiconductor)

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Page 1

查询7C256供应商

High Performance 32K×8 CMOS SRAM

FEATURES

• Organization: 32,768 words × 8 bits

• High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time

• Low power consumption – Active: 660 mW max (10 ns cycle) – Standby: 11 mW max, CMOS I/O

2.75 mW max, CMOS I/O, L version

– Very low DC component in active power

• 2.0V data retention (L version)

32K×8 CMOS SRAM (Common I/O)

• Equal access and cycle times

• Easy memory expansion with CE

• TTL-compatible, thre e-sta te I/O

• 28-pin JEDEC standard packages – 300 mil PDIP and SOJ

Socket compatible with 7C512 and 7C1024

– 330 mil SOIC –8×13.4 TSOP

• ESD protection > 2000 volts

• Latch-up current > 200 mA

AS7C256 AS7C256L

and OE inputs

LOGIC BLOCK DIAGRAM

Vcc

GND

INPUT BUFFER

A0 A1 A2 A3 A4 A5 A6

A14

ROW DECODER

256×128×8

ARRAY

(262,144)

COLUMN DECODER

A8A

A9A10A11A12A

SELECTION GUIDE

PIN ARRANGEME NT

DIP, SOJ, SOIC

I/O7

SENSE AMP

CONTROL

CIRCUIT

WE OE CE

I/O0

TSOP 8×13.4

A14 A12

A7 A6 A5 A4 A3 A2 A1

A0 I/O0 I/O1 I/O2

GND

OE A10

A11

A9 A8

A13

WE Vcc

A14 A12

A7 A6 A5 A4 A3 A2

1 2 3 4 5 6 7 8 9

AS7C256

10 11 12 13 14

22 23 24 25 26 27 28

AS7C256

1 2 3 4 5 6 7

Vcc

27 26

A13

A11 OE

A10

21 20

I/O7

I/O6

I/O5

I/O4

I/O3

I/O7

I/O6

I/O5

I/O4

I/O3

15 14

GND

I/O2

I/O1

I/O0

9 8

AS7C256-02AS7C256-01

7C256-10 7C256-12 7C256-15 7C256-20 7C256-25 7C256-35 Unit

Maximum Address Access Time 10 12 15 20 25 35 ns Maximum Output Enable Access Time 334568ns Maximum Operating Current 120 115 110 100 90 80 mA

Maximum CMOS Standby Current

2.0 2.0 2.0 2.0 2.0 2.0 mA

L 0.5 0.5 0.5 0.5 0.5 0.5 mA

ALLIANCE SEMICONDUCTOR

Page 2

AS7C256 AS7C256L

FUNCTIONAL DESCRIPTION

The AS7C256 is a high performance CMOS 262,144-bit Static Random Access Memory (SRAM) organized as 32,768 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (t

, tRC, tWC) of

10/12/15/20/25/35 ns with output enable access times (t of 3/3/4/5/6/8 ns are ideal for high performance applications. A chip enable (CE

) input permits easy memory

expansion with mult iple-bank memory organizations. When CE

is HIGH the device enters standby mode. The

standard AS7C256 is guaranteed not to exceed 11 mW

A write cycle is accomplishe d by asserti n g chip enable (CE and write enable (WE

) LOW. Data on the input pins

I/O0-I/O7 is writt en on the r ising edge of WE

(write cycle 2). To avoid bus contention, external

or CE devices should drive I/O pins only after outputs have been disabled with output enable (OE

)

A read cycle is accompl ished by assert ing chip enable (CE and output enable (OE

) LOW, with write enable (WE)

) or write enable (WE).

HIGH. The chip drives I/O pins with the data word referenced by the input address. When chip enable or output enable is HIGH, or wri te enable is LOW, output drivers stay in high-impedance mode.

(write cycle 1)

power consumption in standby mode; the L version is guaranteed not to exceed 2.75 mW, and typically requires only 500 µW. The L version also offers 2.0V data retention, with maximum power consumption in this mode of 300 µW.

All chip inputs and outputs are TTL-compa tible, and operation is from a single 5V supply. The AS7C256 is packaged in all high volume industry standard packages.

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Min Max Unit

Voltage on Any Pin Relative to G N D V Power Dissipation P Storage Temperature (Plastic) T Temperatur e Under Bias T DC Output Current I NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress

rating only and functional operatio n of the device at these or any other conditions outside those indicated in the operationa l sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

t D stg bias

out

–0.5 +7.0 V – 1.0 W –55 +150 –10 +85 –20mA

)

TRUT H TABLE

HXXHigh Z Standby (I L H H High Z Output Disable LHLD LLXD

Key: X = Don’t Care, L = LOW, H = HIGH

WE OE Data Mode

out

Read Write

, I

)

SB1

Page 3

AS7C256 AS7C256L

RECOMMEND ED OPER ATING C ONDITI ONS (Ta = 0°C to +70°C)

Parameter Symbol Min Typ Max Unit

Supply Voltage

Input Voltage

min = –3.0V for pulse width less than tRC/2.

DC OPERATING CHARACTERISTICS

Parameter Symbol Test Conditions

Input Leakage Current

Output Leakage Current

Operating Power Supply Current

Standby Power Supply Current

Output Voltage

|ILI|

|ILO|

SB1

V V

VCC = Max, V

= GND to V

CE = VIH, VCC = Max, V

= GND to V

out

CE = VIL, f = f I

= 0 mA

out

CE = VIH, f = f

CE > VCC–0.2V, f = 0, V

≤ 0.2V or

≥ V

–0.2V

IOL = 8 mA, VCC = Min – 0.4 – 0.4 – 0.4 – 0.4 – 0.4 – 0.4 V

IOH = –4 mA, VCC = Min 2.4 – 2.4 – 2.4 – 2.4 – 2.4 – 2.4 – V

max,

max

4.5 5.0 5.5 V GND 0.0 0.0 0.0 V V

2.2 – VCC+1 V

–0.5* – 0.8 V

(VCC = 5V±10% , GND = 0V, Ta = 0°C to +70°C)

-10 -12 -15 -20 -25 -35 UnitMin Max Min Max Min Max Min Max Min Max Min Max

–1–1–1–1–1–1µA

–120–115–110–100– 90 – 80mA

L –115–110–105– 95 – 85 – 75mA

–45–40–30–30–25–25mA

L – 40 – 35 – 25 – 25 – 20 – 20 mA

– 2.0 – 2.0 – 2.0 – 2.0 – 2.0 – 2.0 mA

L – 0.5 – 0.5 – 0.5 – 0.5 – 0.5 – 0.5 mA

CAPACITANCE (f = 1 MHz, Ta = Room Temperature, VCC = 5V)

Parameter Symbol Signals Test Conditions Max Unit

Input Capacitance C I/O Capacitance C

IN I/O

A, CE, WE, OE Vin = 0V 5 pF I/O Vin = V

= 0V 7 pF

out

Page 4

AS7C256

AAAA

AS7C256L

READ CYCLE (VCC = 5V±10%, GND = 0V, Ta = 0°C to +70°C)

3, 9

-10 -12 -15 -20 -25 -35

Parameter Symbol

Read Cycle Time t Address Access Time t Chip Enable (CE Output Enable (OE

) Access Time t

Output Hold from Address Change t

LOW to Output in Low Z t

HIGH to Output in High Z t

LOW to Output in Low Z t

HIGH to Output in High Z t

OE Power Up Time t Power Down Time t

RC AA ACE OE OH CLZ CHZ OLZ OHZ PU PD

TIMING WAVEFORM OF READ CYCLE 1 (Address Controlled)

10 – 12 – 15 – 20 – 25 – 35 – ns

– 10 – 12 – 15 – 20 – 25 – 35 ns 3 – 10 – 12 – 15 – 20 – 25 – 35 ns 3 –3–3–4–5–6–8ns 2–3–3–3–3–3–ns 5 3–3–3–3–3–3–ns4, 5 –3–3–4–5–6–8ns4, 5 0–0–0–0–0–0–ns4, 5 –3–3–4–5–6–8ns4, 5 0–0–0–0–0–0–ns4, 5 – 10 – 12 – 15 – 20 – 25 – 35 ns 4, 5

3, 6, 7, 9

Unit NotesMin Max Min Max Min Max Min Max Min Max Min Max

Address

out

3, 6, 8, 9

TIMING WAVEFORM OF READ CYCLE 2 (CE Controlled)

Data Valid

out

Supply

Current

CLZ

ACE

OLZ

Data Valid

50% 50%

OHZ

CHZ

AS7C256-04

Page 5

AS7C256

AAAA

AAA

Address

out

Data Valid

AAAA

AAA

AS7C256-06

AS7C256L

WRITE CYC LE (VCC = 5V±10% , GND = 0V, Ta = 0°C to +70°C)

-10 -12 -15 -20 -25 -35

Parameter Symbol

Write Cycle Time t Chip Enable to Write En d t Address Setup to Write End t Address Setup Time t Write Pulse Width t Address Hold From End of Write t Data Valid to Write End t Data Hold Time t Write Enable to Output in High Z t Output Active from Write End t

WC CW AW AS WP AH DW DH WZ OW

TIMING WAVEFOR M OF WRITE CYCLE 1 (WE Controlled)

10–12–15–20–20–30– ns

9 –10–12–12–15–20– ns 9 –10–12–12–15–20– ns 0–0–0–0–0–0–ns 7–8–9–12–15–17– ns 0–0–0–0–0–0–ns 6–6–8–10–10–15– ns 0–0–0–0–0–0–ns4, 5 –5–5–5–5–5–5ns4, 5 3–3–3–3–3–3–ns4, 5

10, 11

Unit NotesMin Max Min Max Min Max M in Max Min Max Min Max

Address

out

10, 11

TIMING WAVEFOR M OF WRITE CYCLE 2 (CE Controlled)

Data Valid

AS7C256-05

Page 6

AS7C256

AAAA

AAA

AAAA

AAA

AS7C256L

DATA RETENTION CHARACTERISTICS (L Version Only)

Parameter Symbol Test Conditions Min Max Unit

for Data Retenti o n V

Data Retention Current I Chip Enable to Data Retention Time t Operation Recovery Time t Input Leakage Current

DATA RETENTION WAVEFORM

4.5V 4.5V

AC TEST CONDITIONS

– Output load: see Figure B,

except for t – Input pulse level: GND to 3.0V. See Figure A. – Input rise and fall times: 5 ns. See Figure A. – Input and output timing reference levels: 1.5V.

CLZ

and t

see Figure C.

CHZ

CCDR CDR R

VCC = 2.0V

≥ V

≤ 0.2V

–0.2V

–0.2V or

2.0 – V – 150 µA 0–ns t

–ns

| ILI | –1µA

(L Version Only)

Data retention mode

≥ 2.0V

168Ω

+1.728V

+5V

AS7C256-07

CDR

Thevenin Equivalent:

out

+5V

480

GND

Ω

out

255Ω

Figure C: Output Load for t

+3.0V

GND

90%

10%

90%

10%

Figure A: Input Waveform

out

255Ω 30 pF*

Figure B: Output Load

AS7C256-08 AS7C256-09 AS7C256-10

NOTES

1. During VCC power-up, a pull-up resistor to VCC on CE is requir ed to me et ISB specification.

2. This parameter is sampl ed an d not 100% tested.

3. For test conditions, see AC Test Conditio ns, Figures A, B, C.

4. t

CLZ

and t

are specified with CL = 5pF as in Figure C. Transition is measured ±500mV from steady-state voltage.

CHZ

5. This parame ter is guarante e d but not teste d.

6. WE

is HIGH for read cycle.

7. CE

and OE are LOW for read cycl e.

8. Address valid prior to or coincident with CE

transition LOW.

9. All read cycle timings are referenced from the last valid address to the first transitioning address.

10. CE

or WE must be HIGH during address transitions.

11. All write cycle timings are referenced from the last valid address to the first transitioning address.

480

5 pF* GND

Ω

*including scope

and jig capacitance

, t

CLZ

CHZ

Page 7

TYP I CAL DC AN D AC CHARAC TERIS TICS

Output voltage (V)

0.0 3.75

5.0

2.51.25

100

120

140

Output source current (mA)

Output source current I

Output voltage (V)

0.0 3.75

5.0

2.51.25

Output si nk current (mA )

Output sink current I

vs. output voltage V

100

120

140

VCC = 5.0V

Ta = 25°C

VCC = 5.0V

Ta = 25°C

Capacitance (pF)

0 750

1000

500250

Change in t

(ns)

Typical access time change ∆t

vs. output capac itive loading

VCC = 4.5V

AS7C256 AS7C256L

Normalized supply current ICC, I

vs. supply voltage V

1.4

1.2 I

1.0

, I

0.8

0.6 I

Normalized I

0.4

0.2

0.0

4.0 5.5

5.04.5

Supply voltage (V)

Normalized access time t

vs. supply voltage V

1.5

1.4

1.3

1.2

1.1

6.0

Normalized supply current ICC, I

vs. ambient temperature T

1.4

1.2 I

1.0

, I

0.8

0.6

0.4

Normalized I

0.2

0.0

–55 80

35–10

Ambient temperature (°C)

Normaliz e d acc ess time t vs. ambient tempe rat ure T

1.5

1.4 VCC = 5.0VTa = 25°C

1.3

1.2

1.1

125

Normalized supply current I

vs. ambient tempe rat ure T

625

(log scal e)

SB1

= 5.0V

5 1

0.2

0.04

Normalized I

-55 80

35-10

Ambient temperature (°C)

Normalized supply current I

vs. cycle frequency 1/tRC, 1/t

1.4

1.2 VCC = 5.0V

1.0

Ta = 25°C

0.8

0.6

SB1

125

1.0

Normalized access time

0.9

0.8

4.0 5.5

5.04.5

Supply voltage (V)

1.0

Normalized access time

0.9

0.8

6.0

–55 80

Ambient temperature (°C)

Normalized I

0.4

0.2

0.0

35–10

125

075

5025

100

Cycle frequency (MHz)

AS7C256-11

Page 8

AS7C256 AS7C256L

ORDERING CODES

Package / Access Time 10 ns 12 ns 15 ns 20 ns 25 ns 35 ns

Plastic DIP, 300 mil AS7C256-10PC

Plastic SOJ, 300 mil AS7C256-10JC

Plastic SOIC, 330 mil AS7C256-10SC

TSOP 8×13.4 AS7C256-10TC

AS7C256L-10PC

AS7C256L-10JC

AS7C256L-10SC

AS7C256L-10TC

AS7C256-12PC AS7C256L-12PC

AS7C256-12JC AS7C256L-12JC

AS7C256-12SC AS7C256L-12SC

AS7C256-12TC AS7C256L-12TC

AS7C256-15PC AS7C256L-15PC

AS7C256-15JC AS7C256L-15JC

AS7C256-15SC AS7C256L-15SC

AS7C256-15TC AS7C256L-15TC

AS7C256-20PC AS7C256L-20PC

AS7C256-20JC AS7C256L-20JC

AS7C256-20SC AS7C256L-20SC

AS7C256-20TC AS7C256L-20TC

AS7C256-25PC AS7C256L-25PC

AS7C256-25JC AS7C256L-25JC

AS7C256-25SC AS7C256L-25SC

AS7C256-25TC AS7C256L-25TC

AS7C256-35PC AS7C256L-35PC

AS7C256-35JC AS7C256L-35JC

AS7C256-35SC AS7C256L-35SC

AS7C256-35TC AS7C256L-35TC

PART NUMBERING SYSTEM

AS7C 256 X –XX X C

SRAM Prefix Device Number Blank = Standard Power

L = Low Power

Access Time Package: P = PDIP 300 mil

J = SOJ 3 00 mil

S = SOIC 330 mil T = TSOP 8×14

Commercial Temperature Range, 0°C to 70 °C

REPRESENT AT IVE S, DISTRIB UT OR S, AND SA LES OFF ICE S

DOMESTIC REPS

ALABAMA

Concord Component (205) 772-8883

ARIZONA

Competitive Technology (602) 265-9224

ARKANSAS

Southern States Marketing (214) 238-7500

CALIFORNIA

North:

Brooks Technical

(415) 960-3880

LA Area:

Competitive Tech.

(714) 450-0170

San Diego:

ATS

(619) 634-1488

COLORADO

Technology Sales (303) 792-8835

CONNECTICUT

Kitchen & Kutchin Inc. (203) 239-0212

DELAWARE

Vantage Sales (609) 424-6777

FLORIDA

Micro-Electronic Comp.

Deerfield Beach

(305) 426-8944

Tampa

(813) 393-5011

GEORGIA

Concord Component (404) 416-9597

HAWAII

Brooks Technical (415) 960-3880

IDAHO

ES/Chase (503) 684-8500

ILLINOIS

North:

El-Mech

(312) 794-9100

South:

CenTech

(314) 291-4230

Alliance Semiconductor reserves the right to make changes in this data sheet at any time to improve design and supply the best product possible. Alliance Semiconductor cannot assume responsibility for circuits shown or represent that they are free from patent infringement. Alliance products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of Alliance. The Alliance logo is a trademark of Alliance Semiconductor Corporation. All other trademarks are property of their respective holders.

INDIANA

CC Electro Sales (317) 921-5000

KANSAS

CenTech (816) 358-8100

KENTUCKY

CC Electro Sales (317) 921-5000

LOUISIANA

Southern States Marketing

North:

(214) 238-7500

South:

(713) 868-5180

MAINE

Kitchen & Kutchin Inc. (617) 229-2660

MARYLAND

Ches apeake Technology (301) 236-0530

MASSACHUSETTS

Kitchen & Kutchin Inc. (617) 229-2660

MICHIGAN

Enco Group (810) 338-8600

MINNESOTA

D. A. Case Associates (612) 831-6777

MISSOURI

East: CenTech

(314) 291-4230

West:

CenTech

(816) 358-8100

MISSISSIPPI

Conc ord Component (205) 772-8883

MONTANA

ES/Chase (503) 684-8500

NEBRASKA

CenTech

(816) 358-8100

NEVADA

North:

Brooks Technical

(415) 960-3880

South:

Competitive Tech.

(602) 265-9224

NEW HAMPSHIRE

Kitchen & Kutchin Inc. (617) 229-2660

NEW JERSEY

North:

ERA Associates

(800) 645-5500

South:

Vantage Sales

(609) 424-6777

NEW MEXICO

Competitive Techno logy (602) 265-9224

NEW YORK

NYC:

ERA Associates

(516) 543-0510

Upstate:

Tri-Tech

Rochester

(716) 385-6500

Birmingham

(607) 722-3580

Fishkill

(914) 897-5611

NORTH CAROLINA

Concord Component (919) 846-3441

NORTH DAKOTA

D. A. Case Associates (612) 831-6777

OHIO

Midwest Marketing Assoc.

Lyndhurst:

(216) 381-8575

Dayton:

(513) 433-2511

OKLAHOMA

Southern States Marketing (214) 238-7500

OREGON

ES/Chase (503) 684-8500

PENNSYLVANIA

East:

Vantage Sales

(609) 424-6777

West:

Midwe st Marketing

(216) 381-8575

RHODE ISLAND

Kitchen & Kutchin Inc. (617) 229-2660

SOUTH CAROLINA

Concord Component (919) 846-3441

SOUTH DAKOTA

D. A. Case Associates (612) 831-6777

TENNESSEE

Concord Component (205) 772-8883

TEXAS

Southern States Marketing

Austin:

(512) 835-5822

Dallas:

(214) 238-7500

Houston:

(713) 868-5180

UTAH

Charles Fields & Assoc. (801) 299-8228

VERMONT

Kitchen & Kutchin Inc. (617) 229-2660

VIRGINIA

Chesapeake Technology (301) 236-0530

WASHINGTON

ES/Chase (206) 823-9535

WEST VIRGINIA

Chesapeake Technology (301) 236-0530

WISCONSIN

D. A. Case Associates (612) 831-6777

WYOMING

Technology Sales (303) 777-9726

INTERNATIONAL

AUSTRALIA

NJS Technology Pty Ltd.

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+61-3-562-1244 R&D Electronics

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+61-3-558-0444

CANADA

Tech Trek Ltd.

Mississauga:

(905) 238-0366

Montreal:

(514) 337-7540

Ottawa:

(613) 599-8787

Vancouver:

(604) 276-8735

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(403) 291-6866

EUROPE

Britcomp Sales

Surrey, England

+44-1932 347077 +44-1932 346256

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+49-894488 496

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+33-1-69387678

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San Jose, CA USA

(408) 954-1866

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Eldis Technology +972-9-562-666

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Tokyo

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+81-75-311-2121

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DISTRIBUTORS

All-American

Locations Nationwide Headquarters

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(800) 632-7792 (508) 435-0100

(305 ) 621-8282

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SALES OFFICES

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