Maximum address access time10121520ns
Maximum output enable access time5678ns
Maximum operating current1101009080mA
Maximum CMOS standby current10101010mA
The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8
bits. They are designed for memory applications where fast data access, low power , and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for highperformance applications. The chip enable input CE
When CE
standby power is reached (I
A write cycle is accomplished by asserti ng write enable (
the rising edge of
outputs have been disabled with output enable (
A read cycle is accomplished by asserting output enable (
with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output
drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5 V supply. The AS7C1025B is packaged in common
industry standard packages.
is high, the device enters standby mode. If inputs are still toggling, the device will consume ISB power. If the bus is static, then full
). For example, the AS7C1026B is guaranteed not to exceed 55 mW under nominal full standby conditions.
SB1
WE
(write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after
permits easy memory and expansion with multiple-bank memory systems.
WE
) and chip enable (CE). Data on the input pins I/O0 through I/O7 is written on
OE
) or write enable (
WE
).
OE
) and chip enable (CE), with write enable (WE) high. The chips drive I/O pins
Absolute maximum ratings
ParameterSymbolMinMaxUnit
Voltage on V
Voltage on any pin relative to GND V
Power dissipationP
Storage temperature (plastic)T
Ambient temperature with V
DC current into outputs (low)I
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
relative to GNDV
CC
appliedT
CC
t1
t2
D
stg
bias
OUT
–0.50+7.0V
–0.50VCC + 0.5V
–1.0W
–65+150
–55+125
o
C
o
C
–20mA
Truth table
CEWEOE
HXXHigh ZStandby (I
LHHHigh ZOutput disable (I
LHLD
LLXD
Key: X = don’t care, L = low, H = high.
DataMode
SB
OUT
IN
Read (ICC)
Write (ICC)
, I
SB1
CC
)
)
3/26/04, v. 1.3Alliance SemiconductorP. 2 of 9
Page 3
®
Recommended operating conditions
ParameterSymbolMinNominalMaxUnit
Supply voltageV
Input voltage
Ambient operating temperature
VIL min = -1.0V for pulse width less than 5ns
V
max = VCC+2.0V for pulse width less than 5ns.
IH
commercialT
industrialT
AS7C1025B
CC
V
IH
V
IL
A
A
4.55.05.5V
2.2–VCC + 0.5V
–0.5–0.8V
0–70o C
–40–85
o
C
DC operating characteristics (over the operating range)
ParameterSymbolTest co nditio ns
Input leakage current| ILI |VCC = Max, VIN = GND to V
Output leakage
) access timet
Output hold from address changet
CE
low to output in low Zt
CE
low to output in high Zt
OE
low to output in low Zt
OE
high to output in high Zt
Power up timet
Power down timet
RC
AA
ACE
OE
OH
CLZ
CHZ
OLZ
OHZ
PU
PD
Key to switching waveforms
Read waveform 1 (address controlled)
ddress
D
OUT
t
AA
3,9
-10-12-15-20
UnitNotesMinMax Min Max Min Max Min Max
10-12–15–20–ns
-10–12–15–20ns3
-10–12–15–20ns3
-5–6–7–8 ns
3-3–3–3–ns5
3-3–3–3–ns4, 5
-4–5–6–7ns4, 5
0-0–0–0–ns4, 5
-4–5–6–7ns4, 5
0-0–0–0–ns4, 5
-10–12–15–20ns4, 5
Undefined/don’t careFalling inputRising input
3,6,7,9
t
RC
t
OH
Data valid
Read waveform 2 (CE and OE controlled)
t
CE
OE
t
D
OUT
Supply
current
3/26/04, v. 1.3Alliance SemiconductorP. 4 of 9
ACE
t
CLZ
t
PU
RC1
t
OE
t
OLZ
50%50%
3,6,8,9
Data valid
t
OHZ
t
CHZ
t
PD
I
CC
I
SB
Page 5
AS7C1025B
®
Write cycle (over the operating range)
ParameterSymbol
Write cycle timet
Chip enable (
CE
) to write endt
Address setup to write endt
Address setup timet
Write pulse widtht
Write recovery timet
Address hold from end of writet
Data valid to write endt
Data hold timet
Write enable to output in high Zt
Output active from write endt
– Output load: see Figure B.
– Input pulse level: GND to 3.5 V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5 V.
+3.5 V
GND
90%
10%
2 ns
Figure A: Input pulse
90%
10%
10,11
t
WC
t
AW
t
CW
t
WP
t
WZ
t
DW
Data valid
D
OUT
255
Ω
Figure B: 5 V Output load
+5 V
480
13
C
GND
t
AH
t
WR
t
DH
Ω
D
Thevenin equivalent:
168
OUT
Ω
+1.728 V
Notes
1During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2This parameter is sampled, but not 100% tested.
3For test conditions, see AC Test Conditions, Figures A and B.
4t
and t
CLZ
5This parameter is guaranteed, but not 100% tested.
6
WE
is high for read cycle.
7
CE
and OE are low for read cycle.
8Address is valid prior to or coincident with
9All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF .
3/26/04, v. 1.3Alliance SemiconductorP. 6 of 9
are specified with CL = 5 pF, as in Figure B. Transition is measured ±500 mV from steady-state voltage.
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