Datasheet AS7C1025B Datasheet (Alliance Semiconductor)

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查询AS7C1025B供应商
March 2004
5V 128K X 8 CMOS SRAM (Center power and ground)
Features
• Industrial and commercial temperatures
• High speed
- 10/12/15/20 ns address access time
- 5/6/7/8 ns output enable access time
• Low power consumption: ACTIVE
- 605mW / max @ 10 ns
• Low power consumption: STANDBY
- 55 mW / max CMOS
• 6 T 0.18 u CMOS technology
• Easy memory expansion with
• Center power and ground
• TTL/LVTTL-compatible, three-state I/O
Logic block diagram
V
CC
GND
Input buffer
A0 A1 A2 A3 A4 A5 A6 A7 A8
512 x 256 x 8
Array
(1,048,576)
Row decoder
CE, OE
inputs
Sense amp
I/O7
I/O0
®
• JEDEC-standard packages
- 32-pin, 300 mil SOJ
- 32-pin, 400 mil SOJ
• ESD protection 2000 volts
• Latch-up current 200 mA
Pin arrangement
32-pin SOJ (300 mil) 32-pin SOJ (400 mil)
A0 A1
A2 A3
CE I/O0 I/O1 V
CC
GND
I/O2 I/O3
WE
A4 A5 A6 A7
AS7C1025B
1 2
3 4 5 6 7
8 9 10
AS7C1025B
11 12 13 14 15
16
A16
32
A15
31
A14
30
A13
29 28
OE I/O7
27 26
I/O6
25
GND V
24
CC
23
I/O5
22
I/O4
21
A12 A11
20 19
A10 A9
18 17
A8
WE
OE CE
Column decoder
A9
A1 1
A10
A12
A13
A14
A15
Control
circuit
A16
Selection guide
-10 -12 -15 -20 Unit
Maximum address access time 10 12 15 20 ns Maximum output enable access time 5 6 7 8 ns Maximum operating current 110 100 90 80 mA Maximum CMOS standby current 10 10 10 10 mA
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Copyright © Alliance Semiconductor. All rights reserved.
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AS7C1025B
®
Functional description
The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power , and simple interfacing are desired.
Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns are ideal for high­performance applications. The chip enable input CE
When CE standby power is reached (I
A write cycle is accomplished by asserti ng write enable ( the rising edge of outputs have been disabled with output enable (
A read cycle is accomplished by asserting output enable ( with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output drivers stay in high-impedance mode.
All chip inputs and outputs are TTL-compatible, and operation is from a single 5 V supply. The AS7C1025B is packaged in common industry standard packages.
is high, the device enters standby mode. If inputs are still toggling, the device will consume ISB power. If the bus is static, then full
). For example, the AS7C1026B is guaranteed not to exceed 55 mW under nominal full standby conditions.
SB1
WE
(write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after
permits easy memory and expansion with multiple-bank memory systems.
WE
) and chip enable (CE). Data on the input pins I/O0 through I/O7 is written on
OE
) or write enable (
WE
).
OE
) and chip enable (CE), with write enable (WE) high. The chips drive I/O pins
Absolute maximum ratings
Parameter Symbol Min Max Unit
Voltage on V Voltage on any pin relative to GND V Power dissipation P Storage temperature (plastic) T Ambient temperature with V DC current into outputs (low) I
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func­tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
relative to GND V
CC
applied T
CC
t1 t2 D
stg
bias
OUT
–0.50 +7.0 V –0.50 VCC + 0.5 V
–1.0W –65 +150 –55 +125
o
C
o
C
–20mA
Truth table
CE WE OE
H X X High Z Standby (I L H H High Z Output disable (I LHL D LLX D
Key: X = don’t care, L = low, H = high.
Data Mode
SB
OUT
IN
Read (ICC)
Write (ICC)
, I
SB1
CC
)
)
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®
Recommended operating conditions
Parameter Symbol Min Nominal Max Unit
Supply voltage V
Input voltage
Ambient operating temperature
VIL min = -1.0V for pulse width less than 5ns V
max = VCC+2.0V for pulse width less than 5ns.
IH
commercial T
industrial T
AS7C1025B
CC
V
IH
V
IL A A
4.5 5.0 5.5 V
2.2 VCC + 0.5 V
–0.5 0.8 V
0–70o C
–40 85
o
C
DC operating characteristics (over the operating range)
Parameter Symbol Test co nditio ns
Input leakage current | ILI | VCC = Max, VIN = GND to V Output leakage
current Operating power
supply current Standby power supply
1
current
Output voltage
|
| I
LO
I
CC
I
SB
I
SB1
V
OL
V
OHIOH
= Max, CE = VIH,
V
CC
= GND to V
V
out
VCC = Max
VIL, f = f
CE VCC = Max
VIH, f = f
CE VCC = Max
VCC–0.2 V,
CE VIN ≤ 0.2 V or VIN VCC –0.2 V, f = 0
IOL = 8 mA, VCC = Min 0.4 0.4 0.4 0.4 V
= –4 mA, VCC = Min 2.4 2.4 2.4 2.4 V
CC
Max, IOUT
Max
Capacitance (f = 1 MHz, T
Parameter Symbol Signals Test conditions Max Unit
Input capacitance C I/O capacitance C
= 25o C, VCC = NOMINAL)
a
IN
I/O
= 0 mA
A, CE, WE,
–1–1–1–1µA
CC
–1–1–1–1µA
110 100 90 80 mA
–50–45–45–40mA
2
I/O VIN = V
1
-10 -12 -15 -20
10 10 10 10 mA
OE
VIN = 0 V 5 pF
= 0 V 7 pF
OUT
UnitMin Max Min Max Min Max Min Max
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AS7C1025B
A
®
Read cycle (over the operating range)
Parameter Symbol
Read cycle time t Address access time t Chip enable ( Output enable (
CE
) access time t
OE
) access time t Output hold from address change t CE
low to output in low Z t
CE
low to output in high Z t
OE
low to output in low Z t
OE
high to output in high Z t Power up time t Power down time t
RC AA
ACE
OE OH
CLZ
CHZ
OLZ
OHZ
PU PD
Key to switching waveforms
Read waveform 1 (address controlled)
ddress
D
OUT
t
AA
3,9
-10 -12 -15 -20 Unit NotesMin Max Min Max Min Max Min Max
10 - 12 15 20 ns
- 10 12 15 20 ns 3
- 10 12 15 20 ns 3
-5–6–7–8 ns 3 - 3 3 3 ns 5 3 - 3 3 3 ns 4, 5
- 4 5 6 7 ns 4, 5 0 - 0 0 0 ns 4, 5
- 4 5 6 7 ns 4, 5 0 - 0 0 0 ns 4, 5
- 10 12 15 20 ns 4, 5
Undefined/don’t careFalling inputRising input
3,6,7,9
t
RC
t
OH
Data valid
Read waveform 2 (CE and OE controlled)
t
CE
OE
t
D
OUT
Supply
current
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ACE
t
CLZ
t
PU
RC1
t
OE
t
OLZ
50% 50%
3,6,8,9
Data valid
t
OHZ
t
CHZ
t
PD
I
CC
I
SB
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AS7C1025B
®
Write cycle (over the operating range)
Parameter Symbol
Write cycle time t Chip enable (
CE
) to write end t Address setup to write end t Address setup time t Write pulse width t Write recovery time t Address hold from end of write t Data valid to write end t Data hold time t Write enable to output in high Z t Output active from write end t
Write waveform 1 (WE controlled)
Address
WE
t
AS
D
IN
D
OUT
WC CW AW
AS WP WR AH DW DH WZ OW
10,11
t
WZ
11
-10 -12 -15 -20 Unit NotesMin Max Min Max Min Max Min Max
10 - 12 15 20 ns
8-9–10–12– ns 8-9–10–10– ns 0-0–0–0– ns 7 - 8 9 12 ns 0-0–0–0– ns 0-0–0–0– ns 5 - 6 8 10 ns 0 - 0 0 0 ns 4, 5
- 5 6 7 8 ns 4, 5
1 - 1 1 2 ns 4, 5
t
t
AW
WC
t
WP
t
DW
Data valid
t
OW
t
WR
t
AH
t
DH
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AS7C1025B
®
Write waveform 2 (CE controlled)
Address
t
AS
CE
WE
D
IN
D
OUT
AC test conditions
– Output load: see Figure B. – Input pulse level: GND to 3.5 V. See Figure A. – Input rise and fall times: 2 ns. See Figure A. – Input and output timing reference levels: 1.5 V.
+3.5 V
GND
90%
10%
2 ns
Figure A: Input pulse
90%
10%
10,11
t
WC
t
AW
t
CW
t
WP
t
WZ
t
DW
Data valid
D
OUT
255
Figure B: 5 V Output load
+5 V
480
13
C GND
t
AH
t
WR
t
DH
D
Thevenin equivalent:
168
OUT
+1.728 V
Notes
1 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. 2 This parameter is sampled, but not 100% tested. 3 For test conditions, see AC Test Conditions, Figures A and B. 4t
and t
CLZ
5 This parameter is guaranteed, but not 100% tested. 6
WE
is high for read cycle.
7
CE
and OE are low for read cycle. 8 Address is valid prior to or coincident with 9 All read cycle timings are referenced from the last valid address to the first transitioning address. 10 N/A 11 All write cycle timings are referenced from the last valid address to the first transitioning address. 12 N/A. 13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF .
3/26/04, v. 1.3 Alliance Semiconductor P. 6 of 9
are specified with CL = 5 pF, as in Figure B. Transition is measured ±500 mV from steady-state voltage.
CHZ
CE
transition low.
Page 7
Package dimensions
AS7C1025B
®
32-pin SOJ 300 mil/400 mil
Pin 1
A2
Symbol
32-pin SOJ
300 mil
Min Max Min Max
32-pin SOJ
400 mil
A 0.128 0.145 0.132 0.146
A1 0.025 - 0.025 -
D
e
A2 0.095 0.105 0.105 0.115
B 0.026 0.032 0.026 0.032
E1
E2
b 0.016 0.020 0.015 0.020 c 0.007 0.010 0.007 0.013
B
A1
c
b
Seating
plane
A
D 0.820 0.830 0.820 0.830
E 0.255 0.275 0.354 0.378 E1 0.295 0.305 0.395 0.405 E2 0.330 0.340 0.435 0.445
e 0.050 BSC 0.050 BSC
E
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AS7C1025B
®
Ordering Codes
Package \
Access time
300-mil SOJ Commercial AS7C1025B-10TJC AS7C1025B-12TJC AS7C1025B-15TJC AS7C1025B-20TJC
400-mil SOJ Commercial AS7C1025B-10JC AS7C1025B-12JC AS7C1025B-15JC AS7C1025B-20JC
Note: Add suffix ‘N’ to the above part number for LEAD FREE parts. (Ex AS7C1025B-10TJCN)
Part numbering system
AS7C 1025B –XX X X X
SRAM
prefix
Temperature 10 ns 12 ns 15 ns 20 ns
Industrial AS7C1025B-10TJI AS7C1025B-12TJI AS7C1025B-15TJI AS7C1025B-20TJI
Industrial AS7C1025B-10JI AS7C1025B-12JI AS7C1025B-15JI AS7C1025B-20JI
Device number Access time
Package:
TJ = SOJ 300 mil
J = SOJ 400 mil
Temperature range
C = commercial, 0° C to 70° C
I = industrial, -40° C to 85° C
N = LEAD FREE
PART
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AS7C1025B
®
®
Alliance Semiconductor Corporation 2575, Augustine Drive, Santa Clara, CA 95054 Te l: 408 - 855 - 4900
Copyright © Alliance Semiconductor All Rights Reserved Part Number: AS7C1025B Document Version: v. 1.3
Fax: 408 - 855 - 4999 www.alsc.com
© Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered
trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights; mask works rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use.
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