Datasheet ARF464B, ARF464A Datasheet (Advanced Power Technology APT)

D

ARF464A

G

S

TO-247

ARF464B

Common
Source

RF POWER MOSFETs

N-CH ANNEL ENHANCEMENT MODE 65V 100W 100MHz

The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for push­pull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been
optimized for both linear and high efficiency classes of operation.

• Specified 65 Volt, 81.36 MHz Characteristics:

• Output Power = 100 Watts.

• Gain = 13dB (Class AB)

• Efficiency = 75% (Class C)

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

• Low Cost Common Source RF Package.

• Low Vth thermal coefficient.

• Low Thermal Resistance.

• Optimized SOA for Superior Ruggedness.

ARF464A/B

UNIT

V

V

V

R

TJ,T

DSS

DGO

I

P

qJC

T

Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C

D

Gate-Source Voltage

GS

Total Power Dissipation @ TC = 25°C

D

Junction to Case
Operating and Storage Junction Temperature Range

STG

L

PRELIMINARY

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VDS(ON)

I

DSS

I

GSS

g

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Forward Transconductance (VDS = 25V, ID = 7.5A)

fs

Gate Threshold Voltage (V

1

(ID(ON) = 7.5A, VGS = 10V)

= VGS, ID = 50mA)

DS

DS

DS

= 0V, ID = 250 µA)

GS

= V
= 0.8 V

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

200
200

Volts

15
±30
180

0.70

Amps

Volts

Watts

°C/W

-55 to 150
300

°C

MIN TYP MAX

UNIT

200

3.0

Volts

25

250

µA

±100
2 3.5 5
35

nA
mhos
Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: (33 ) 5 56 47 97 61

050-5999 Rev - 7-2001

DYNAMIC CHARACTERISTICS ARF464A/B

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

VDS = 150V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

@ 25°C

RG = 1.6W

DSS

FUNCTIONAL CHARACTERISTICS

Symbol

G

PS

h

y

1

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1

Test Conditions

f = 81.36 MHz

= 0V VDD = 65V

V

GS

= 100W

P

out

MIN TYP MAX

UNIT

775 1000
340 480

pF

150 230

612
918

ns

13 20

3.4 10

MIN TYP MAX

13 15
70 75

UNIT

dB

%

No Degradation in Output Power

30

25

20

15

GAIN (dB)

10

5

0

8

6

4

2

, DRAIN CURRENT (AMPERES)

D

I

0

050-5999 Rev - 7-2001

Class C

= 150V

V

DD

P

= 150W

out

NOT UPDATED

PRELIMINARY

30 45 60 75 90 105 120

VDS> ID (ON) x RDS (ON)MAX.

TJ = +125°C

TJ = +25°C

24 6810

V

GS

Figure 3, Typical Transfer Characteristics

FREQUENCY (MHz)

Figure 1, Typical Gain vs Frequency

TJ = -55°C

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

TJ = -55°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

3000

1000

500

100

CAPACITANCE (pf)

50

10

.1 .5 1 5 10 50 150

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

60

OPERATION HERE

LIMITED BY RDS (ON)

10

5

, DRAIN CURRENT (AMPERES)

D

I

Figure 4, Typical Maximum Safe Operating Area

TC =+25°C
TJ =+150°C
SINGLE PULSE

1

1 5 10 50 100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

C

iss

C

oss

C

rss

1mS

10mS

100mS

DC

ARF464A/B

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

1.2

25

1.1

1.0

0.9

(NORMALIZED)

0.8

, THRESHOLD VOLTAGE

GS(th)

0.7

V

0.6

-50 -25 0 25 50 75 100 125 150

Figure 5, Typical Threshold Voltage vs Temperature

160

120

80

, POWER OUT (WATTS)

40

OUT

P

TC, CASE TEMPERATURE (°C)

Class C

= 150V

V

DD

f = 81.36 MHz

0

0246810

Figure 7, Typical Power Out vs Power In

, POWER IN (WATTS)

P

IN

20

15

10

5

, DRAIN CURRENT (AMPERES)

D

I

0

1 5 10 15 20 25 30
V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

Figure 6, Typical Output Characteristics

14

12

10

(dB)

8

, COMMON SOURCE AMPLIFIER GAIN

PS

G

6

0 40 80 120 160

Figure 8, Typical Common Source Amplifier Gain vs Power Out

VGS=10 & 15V

P

, POWER OUT (WATTS)

OUT

8V

7.5V
7V

6.5V
6V

5.5V

Class C

= 150V

V

DD

f = 81.36 MHz

0.8

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

D=0.5

0.2

0.1

0.05

PRELIMINARY

0.02

0.01

Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

SINGLE PULSE

-4

10

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

-2

10

-1

10

1.0 10

Table 1 - Typical Class AB Large Signal Input - Output Impedance

Freq. (MHz)

2.0

13.5
27
40
65
80
100

Zin (Ω)

24 - j 5

7.5 - j 11

2.0 - j 6.2

0.7 - j 3.1

0.31 + j 0.52

0.47 + j 2.1

0.9 + j 3.8

(Ω)

Z

OL

15.3 - j 0.6

14.2 - j 3.4

11.6 - j 5.3

8.9 - j 5.6

5.3 - j 4.0

4.0 - j 2.7

2.8 - j 0.9

Zin - Gate shunted with 25Ω IDQ = 50mA
Z

- Conjugate of optimum load for 100 Watts output at Vdd = 65V

OL

050-5999 Rev - 7-2001

L4

ARF464A/B

Bias
0 - 12V

RF
Input

C2

C3

C8

L1

R2

R1

L3

C1

DUT

L2

C7

C6

+

-

65V

C1 -- 560pF NPO 50V chip mounted
at gate lead
C2-C3 -- Arco 424 Mica trimmer
C4-C5 -- Arco 463 Mica trimmer
C5-C8 -- 10nF 500V COG chip
L1 -- 3t #18 .25" ID .3"L ~48nH
L2 -- 3t #16 AWG .25" ID .35"L ~68nH

C5

RF
Output

L3 -- 10t #18 AWG .25 ID ~470nH
L4 -- VK200-4B ferrite choke ~3uH

C4

R1-R2 -- 50 Ohm 1/2W Carbon
DUT = ARF464A/B

81.36 MHz Test Circuit

Source

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

PRELIMINARY

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

Top View

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF

power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.

Device

ARF - A

ARF - B
Gate Drain
Source Source
Drain Gate

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC
2-Plcs.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5999 Rev - 7-2001

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058