Datasheet ARF461B, ARF461A Datasheet (Advanced Power Technology APT)

D

ARF461A

G

S

TO-247

ARF461B

Common
Source

RF POWER MOSFETs

N-CH ANNEL ENHANCEMENT MODE 250V 150W 65MHz

The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for push­pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
optimized for both linear and high efficiency classes of operation.

• Specified 250 Volt, 40.68 MHz Characteristics:

• Output Power = 150 Watts.

• Gain = 13dB (Class AB)

• Efficiency = 75% (Class C)

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

• Low Cost Common Source RF Package.

• Low Vth thermal coefficient.

• Low Thermal Resistance.

• Optimized SOA for Superior Ruggedness.

ARF461A/B

UNIT

V

V

V

R

TJ,T

DSS

DGO

I

P

qJC

T

Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C

D

Gate-Source Voltage

GS

Total Power Dissipation @ TC = 25°C

D

Junction to Case
Operating and Storage Junction Temperature Range

STG

L

PRELIMINARY

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VDS(ON)

I

DSS

I

GSS

g

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Forward Transconductance (VDS = 25V, ID = 3.25A)

fs

Gate Threshold Voltage (V

1

(ID(ON) = 3.25A, VGS = 10V)

DS

DS

= VGS, ID = 50mA)

DS

= 0V, ID = 250 µA)

GS

= V
= 0.8 V

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

1000
1000

Volts

6.5
±30
250

0.50

Amps

Volts

Watts

°C/W

-55 to 150
300

°C

MIN TYP MAX

UNIT

1000

6.5

Volts

25

250

µA

±100
34
35

nA
mhos
Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: (33 ) 5 56 47 97 61

050-5987 Rev A 7-2001

DYNAMIC CHARACTERISTICS ARF461A/B

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

VDS = 50V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

@ 25°C

RG = 1.6W

DSS

FUNCTIONAL CHARACTERISTICS

Symbol

G

PS

h

y

1

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 10:1

Test Conditions

f = 40.68 MHz

= 0V VDD = 250V

V

GS

= 150W

P

out

MIN TYP MAX

UNIT

1700

175

pF

50

8
5

ns

21

10.1

MIN TYP MAX

13 15
70 75

UNIT

dB

%

No Degradation in Output Power

30

25

20

15

GAIN (dB)

10

PRELIMINARY

5

0

30 45 60 75 90 105 120

8

VDS> ID (ON) x RDS (ON)MAX.

6

4

FREQUENCY (MHz)

Figure 1, Typical Gain vs Frequency

TJ = -55°C

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

Class C

V

DD

P

out

= 150V

= 150W

5000

C

iss

1000

500

100

CAPACITANCE (pf)

50

10

.1 .5 1 5 10 50 200

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

26

OPERATION HERE

LIMITED BY RDS (ON)

10

5

1

C

oss

C

rss

100uS

1mS

10mS

2

, DRAIN CURRENT (AMPERES)

D

I

0

050-5987 Rev A 7-2001

TJ = +125°C

TJ = +25°C

02468

, GATE-TO-SOURCE VOLTAGE (VOLTS)

V

GS

Figure 3, Typical Transfer Characteristics

TJ = -55°C

.5

, DRAIN CURRENT (AMPERES)

D

I

.1

Figure 4, Typical Maximum Safe Operating Area

TC =+25°C
TJ =+150°C
SINGLE PULSE

1 10 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

100mS

DC

ARF461A/B

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

1.2

1.1

25

VGS=15, 10, 8 & 6.5V

20

6V

1.0

0.9

(NORMALIZED)

, THRESHOLD VOLTAGE

0.8

GS(th)

V

0.7

-50 -25 0 25 50 75 100 125 150

Figure 5, Typical Threshold Voltage vs Temperature

160

120

80

, POWER OUT (WATTS)

40

OUT

P

TC, CASE TEMPERATURE (°C)

Class C

= 150V

V

DD

f = 81.36 MHz

0

0246810

Figure 7, Typical Power Out vs Power In

, POWER IN (WATTS)

P

IN

15

10

5

, DRAIN CURRENT (AMPERES)

D

I

0

1 5 10 15 20 25 30

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

V

DS

Figure 6, Typical Output Characteristics

14

12

10

(dB)

8

, COMMON SOURCE AMPLIFIER GAIN

PS

G

6

0 40 80 120 160

P

, POWER OUT (WATTS)

Figure 8, Typical Common Source Amplifier Gain vs Power Out

OUT

5.5V

5V

4.5V
4V

Class C

= 150V

V

DD

f = 81.36 MHz

0.6

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

q

Z

0.001

-5

10

D=0.5

0.2

0.1

0.05

PRELIMINARY

0.02

0.01

Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

-4

10

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

-3

10

-2

10

-1

10

1.0 10

Table 1 - Typical Class AB Large Signal Input - Output Impedance

Freq. (MHz)

2.0

13.5
27
40
65

Zin - Gate shunted with 25Ω I

- Conjugate of optimum load for 150 Watts output at Vdd = 250V

Z

OL

Zin (Ω)

20.4 - j 9.6

2.1 - j 6.4
.50 - j 2.3
.20 - j 0.4

.46 + j 2.0

= 100mA

DQ

(Ω)

Z

OL

148 - j 20

84 - j 74
36 - j 63
19 - j 48

7.7 - j 30

050-5987 Rev A 7-2001

Bias
0 - 12V

RF
Input

C5

C2

ARF461A/B

L4

+

+

-

C6

L1

R2

R1

L3

C1

DUT

L2

C7

C9

C3

C8

C4

-

RF
Output

40.68 MHz Test Circuit

C1 -- 1800pF + 1000pF 100V chips

250V

mounted at gate lead
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 mF 500V ceramic chip
C9 -- 2200 pF 500 V chip
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
L2 -- 7t #16 AWG .4" ID .5"L ~335nH
L3 -- 25t #24 AWG .25"ID ~2.2uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF461A/B

Source

TO-247 Package Outline

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

PRELIMINARY

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

Top View

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF

power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.

Device

ARF - A

ARF - B
Gate Drain
Source Source
Drain Gate

2.21 (.087)

2.59 (.102)

5.45 (.215) BSC
2-Plcs.

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5987 Rev A 7-2001

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058