Datasheet ARF449B, ARF449A Datasheet (Advanced Power Technology APT)

D

ARF449A

G

S

TO-247

ARF449B

Common
Source

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE 150V 150W 120MHz

The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for push­pull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

• Specified 150 Volt, 81.36 MHz Characteristics:

• Output Power = 150 Watts.

• Gain = 13dB (Class C)

• Efficiency = 75%

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

• Low Cost Common Source RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF449A/449B

UNIT

V

V

V

R

TJ,T

DSS

DGO

I

P

θJC

T

Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C

D

Gate-Source Voltage

GS

Total Power Dissipation @ TC = 25°C

D

Junction to Case
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VDS(ON)

I

DSS

I

GSS

g

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Forward Transconductance (VDS = 25V, ID = 5A)

fs

Gate Threshold Voltage (V

1

(ID(ON) = 5A, VGS = 10V)

= VGS, ID = 50mA)

DS

= 0V, ID = 250 µA)

GS

= V

DS

= 0.8 V

DS

, VGS = 0V)

DSS

DSS

DS

, VGS = 0V, TC = 125°C)

= 0V)

450
450

Volts

9
±30
165

0.76

Amps

Volts

Watts

°C/W

-55 to 150
300

°C

MIN TYP MAX

UNIT

450

4

Volts

25

250

µA

±100

3 5.8
25

nA
mhos
Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-4909 Rev B

DYNAMIC CHARACTERISTICS ARF449A/449B

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

VDS = 150V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

@ 25°C

RG = 1.6Ω

DSS

FUNCTIONAL CHARACTERISTICS

Symbol

G

η

ψ

1

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

PS

Characteristic

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1

Test Conditions

f = 81.36 MHz

= 0V VDD = 150V

V

GS

= 150W

P

out

MIN TYP MAX

UNIT

980 1200

87 120

pF

25 40

510

3.1 7

ns

15 25

37

MIN TYP MAX

12 13
70 75

UNIT

dB

%

No Degradation in Output Power

GAIN (dB)

, DRAIN CURRENT (AMPERES)
I

050-4909 Rev B

30

25

20

15

10

5

0

30 45 60 75 90 105 120

16

VDS> ID (ON) x RDS (ON)MAX.

12

8

4

D

0

02468

V

GS

Figure 3, Typical Transfer Characteristics

FREQUENCY (MHz)

Figure 1, Typical Gain vs Frequency

TJ = -55°C

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

TJ = +125°C

TJ = +25°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

Class C

= 150V

V

DD

P

= 150W

out

TJ = -55°C

3000

C

1000

500

100

CAPACITANCE (pf)

50

10

1 5 10 50 150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

50

OPERATION HERE

LIMITED BY RDS (ON)

10

5

1

.5

, DRAIN CURRENT (AMPERES)

D

I

TC =+25°C
TJ =+150°C
SINGLE PULSE

.1

1 5 10 50 100 500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 4, Typical Maximum Safe Operating Area

iss

C

oss

C

rss

10µS
100µS

1mS

10mS

100mS
DC

ARF449A/449B

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

1.2

25

1.1

1.0

0.9

(NORMALIZED)

0.8

, THRESHOLD VOLTAGE

GS(th)

0.7

V

0.6

-50 -25 0 25 50 75 100 125 150

Figure 5, Typical Threshold Voltage vs Temperature

160

120

80

, POWER OUT (WATTS)

40

OUT

P

0

0246810

, CASE TEMPERATURE (°C)

T

C

Class C

= 150V

V

DD

f = 81.36 MHz

, POWER IN (WATTS)

P

Figure 7, Typical Power Out vs Power In

IN

20

VGS=8, 10 & 15V

15

10

5

, DRAIN CURRENT (AMPERES)

D

I

0

1 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6, Typical Output Characteristics

14

12

10

(dB)

8

, COMMON SOURCE AMPLIFIER GAIN

PS

G

6

0 40 80 120 160

P

, POWER OUT (WATTS)

Figure 8, Typical Common Source Amplifier Gain vs Power Out

OUT

6.5V

6V

5.5V

5V

4.5V

Class C

= 150V

V

DD

f = 81.36 MHz

0.8
D=0.5

0.2

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

0.1

0.05

0.02

0.01

Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

Freq. (MHz)

100.0

-

Z

in

Z

-

OL

SINGLE PULSE

-4

10

Table 1 - Typical Class C Large Signal Inpu

2.0

13.5

27.0

40.0

65.0

80.0

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

Z

in

-2

10

-1

10

t-O

utput Impedance

(Ω)Z

23.00 - j 7.0

4.30 - j 9.1

1.00 - j 4.2

0.42 - j 1.7

0.35 + j 1.1

0.56 + j 2.5

0.90 + j 3.8

gate shunted by 25Ω

conjugate of optimum load impedance for 150W at 150V

(Ω)

OL

93.0 - j 10

63.0 - j 43

32.0 - j 43

17.5 - j 34

7.7 - j 22

5.1 - j 16

3.4 - j 12

1.0 10

050-4909 Rev B

Parts List

ARF449A/449B

81.36 MHz Test Circuit

C1 -- 680pF Unelco
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 0.8" #18 AWG into hairpin ~19nH
L2-L3 -- 3t #18 AWG .25" ID ~50nH
L4 -- 10t #18 AWG .25" ID ~470nH
L5 -- VK200-4B ferrite choke ~3uH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 4:1 Broadband Transformer

RF Input

L1

T1

C2

L4

L2 L3

DUT

C1

R1

81.36 MHz Test Circuit

TO-247 Package Outline

L5

C6 C7

C5

C3

+

150V

-

RF Output

C4

Top View

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Dimensions in Millimeters and (Inches)
NOTE: The ARF446 and ARF447 comprise a symmetric

pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.

Device

ARF449A

ARF449B
Gate Drain
Source Source

Source

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

Drain Gate

2.21 (.087)

2.59 (.102)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone:[phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone:[phone] FAX: [phone]

050-4909 Rev B

5.45 (.215) BSC

2-Plcs.