Datasheet ARF448B, ARF448A Datasheet (Advanced Power Technology APT)

D

ARF448A

G

S

TO-247

ARF448B

Common
Source

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE 150V 250W 65MHz

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push­pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

• Specified 150 Volt, 40.68 MHz Characteristics:

• Output Power = 250 Watts.

• Gain = 15dB (Class C)

• Efficiency = 75%

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

• Low Cost Common Source RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF448A/448B

UNIT

V

V

V

R

TJ,T

DSS

DGO

I

P

θJC

T

Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C

D

Gate-Source Voltage

GS

Total Power Dissipation @ TC = 25°C

D

Junction to Case
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VDS(ON)

I

DSS

I

GSS

g

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Forward Transconductance (VDS = 25V, ID = 7.5A)

fs

Gate Threshold Voltage (V

1

(ID(ON) = 7.5A, VGS = 10V)

= VGS, ID = 50mA)

DS

= 0V, ID = 250 µA)

GS

= V

DS

= 0.8 V

DS

, VGS = 0V)

DSS

DSS

DS

, VGS = 0V, TC = 125°C)

= 0V)

450
450

Volts

15
±30
230

0.55

Amps

Volts

Watts

°C/W

-55 to 150
300

°C

MIN TYP MAX

UNIT

450

3

Volts

25

250

µA

±100

5 8.5
25

nA
mhos
Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-4908 Rev B

DYNAMIC CHARACTERISTICS ARF448A/448B

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

VDS = 150V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

@ 25°C

RG = 1.6Ω

DSS

FUNCTIONAL CHARACTERISTICS

Symbol

G

PS

η

ψ

1

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1

Test Conditions

f = 40.68 MHz

= 0V VDD = 150V

V

GS

= 250W

P

out

MIN TYP MAX

UNIT

1400 1700

150 200

pF

65 100

715
510

ns

23 40
12 25

MIN TYP MAX

13 15
70 75

UNIT

dB

%

No Degradation in Output Power

GAIN (dB)

, DRAIN CURRENT (AMPERES)
I

050-4908 Rev B

30

Class C

= 150V

V

25

20

15

10

5

0

10 20 30 40 50 60 65

25

VDS> ID (ON) x RDS (ON)MAX.

20

15

10

5

D

0

02468

V

GS

Figure 3, Typical Transfer Characteristics

FREQUENCY (MHz)

Figure 1, Typical Gain vs Frequency

TJ = -55°C

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

TJ = +125°C

TJ = +25°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

DD

P

= 250W

out

TJ = -55°C

3000

C

iss

1000

500

CAPACITANCE (pf)

100

50

1 5 10 50 150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

70

OPERATION HERE

LIMITED BY RDS (ON)

10

5

1

.5

, DRAIN CURRENT (AMPERES)

D

I

TC =+25°C
TJ =+150°C
SINGLE PULSE

.1

1 5 10 50 100 500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 4, Typical Maximum Safe Operating Area

C

oss

C

rss

10µS
100µS

1mS

10mS

100mS
DC

ARF448A/448B

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

1.2

1.1

1.0

40

VGS=8, 10 & 15V

30

6.5V

0.9

(NORMALIZED)

0.8

, THRESHOLD VOLTAGE

GS(th)

0.7

V

0.6

-50 -25 0 25 50 75 100 125 150

Figure 5, Typical Threshold Voltage vs Temperature

300

240

180

120

, POWER OUT (WATTS)

OUT

60

P

0

0246810

, CASE TEMPERATURE (°C)

T

C

Class C

= 150V

V

DD

f = 40.68 MHz

P

, POWER IN (WATTS)

Figure 7, Typical Power Out vs Power In

IN

20

10

, DRAIN CURRENT (AMPERES)

D

I

0

1 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6, Typical Output Characteristics

17

Class C

= 150V

V

DD

16

f = 40.68 MHz

15

(dB)

14

, COMMON SOURCE AMPLIFIER GAIN

PS

G

13

0 60 120 180 240 300

P

, POWER OUT (WATTS)

Figure 8, Typical Common Source Amplifier Gain vs Power Out

OUT

6V

5.5V

5V

4.5V

0.6
D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

Table 1 - Typical Class C Large Signal Inpu

Freq. (MHz)

2.0

13.5

27.0

40.0

65.0

Z

-

gate shunted by 25Ω

in

Z

-

conjugate of optimum load impedance for 250W at 150V

OL

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

Z

in

-2

10

-1

10

t-O

utput Impedance

(Ω)Z

20.90 - j 9.2

2.40 - j 6.8

0.57 - j 2.6

0.31 - j 0.5

0.44 + j 1.9

(Ω)

OL

56.00 - j 06.0

37.00 - j 26.0

18.00 - j 25.0

9.90 - j 19.2

4.35 - j 11.4

1.0 10

050-4908 Rev B

Parts List

ARF448A/448B

40.68 MHz Test Circuit

C1 -- 1800pF 100V chip
C2-C4 -- Arco 463 Mica Trimmer
C5-C7 -- 1nF 500V COG chip
L1 -- 1" #16 AWG into hairpin ~9.6nH
L2 -- 6t #16 AWG .25" ID ~165nH
L3 -- 10t #18 AWG .25" ID ~0.47µH
L4 -- VK200-4B ferrite choke ~3uH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 9:1 Broadband Transformer

RF Input

T1

C1

C2

L3

L1

DUT

R1

TO-247 Package Outline

L4

C6 C7

L2

C5

C4

C3

40.48 MHz Test Circuit

+

150V

-

RF Output

Top View

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Dimensions in Millimeters and (Inches)
NOTE: The ARF446 and ARF447 comprise a symmetric

pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.

Device

ARF448A

ARF448B
Gate Drain
Source Source

Source

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

Drain Gate

2.21 (.087)

2.59 (.102)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone:[phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone:[phone] FAX: [phone]

050-4908 Rev B

5.45 (.215) BSC

2-Plcs.