Datasheet ARF447, ARF446 Datasheet (Advanced Power Technology APT)

D

ARF446

G

S

TO-247

ARF447

Common
Source

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE 250V 250W 65MHz

The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

• Specified 250 Volt, 40.68 MHz Characteristics:

• Output Power = 250 Watts.

• Gain = 15dB (Class C)

• Efficiency = 75%

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

• Low Cost Common Source RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF446/447

UNIT

V

V

V

R

TJ,T

DSS

DGO

I

P

θJC

T

Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C

D

Gate-Source Voltage

GS

Total Power Dissipation @ TC = 25°C

D

Junction to Case
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VDS(ON)

I

DSS

I

GSS

g

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Forward Transconductance (VDS = 25V, ID = 3.5A)

fs

Gate Threshold Voltage (V

1

(ID(ON) = 3.5A, VGS = 10V)

= VGS, ID = 50mA)

DS

= 0V, ID = 250 µA)

GS

= V

DS

= 0.8 V

DS

, VGS = 0V)

DSS

DSS

DS

, VGS = 0V, TC = 125°C)
= 0V)

900
900

Volts

6.5
±30
230

0.55

Amps

Volts

Watts

°C/W

-55 to 150
300

°C

MIN TYP MAX

UNIT

900

7

Volts

25

250

µA

±100

4 5.7
25

nA
mhos
Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-4907 Rev C

DYNAMIC CHARACTERISTICS ARF446/447

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

VDS = 300V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

@ 25°C

RG = 1.6Ω

DSS

FUNCTIONAL CHARACTERISTICS

Symbol

G

η

ψ

G

η
ψ

1

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

PS

PS

GAIN (dB)

Characteristic

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1

30

25

20

15

10

Class C

V

DD

P

out

= 250V

= 250W

Test Conditions

f = 27.12 MHz

= 0V VDD = 300V

V

GS

= 250W

P

out

f = 40.68 MHz

= 0V VDD = 250V

V

GS

= 250W

P

out

3000

1000

500

100

CAPACITANCE (pf)

50

MIN TYP MAX

UNIT

1500 1800

70 130

pF

27 50

715
510

ns

23 40
12 25

MIN TYP MAX

20
80

UNIT

dB

%

No Degradation in Output Power

13 15
70 75

dB

%

No Degradation in Output Power

C

iss

C

oss

C

rss

, DRAIN CURRENT (AMPERES)
I

050-4907 Rev C

5

0

10 20 30 40 50 60 65

16

VDS> ID (ON) x RDS (ON)MAX.

12

8

4

D

0

02468

V

GS

Figure 3, Typical Transfer Characteristics

FREQUENCY (MHz)

Figure 1, Typical Gain vs Frequency

TJ = -55°C

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

TJ = +125°C

TJ = +25°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

TJ = -55°C

10

1 5 10 50 100 300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

30

OPERATION HERE

10

.5

, DRAIN CURRENT (AMPERES)

D

I

.1

Figure 4, Typical Maximum Safe Operating Area

LIMITED BY RDS (ON)

5

1

TC =+25°C
TJ =+150°C
SINGLE PULSE

1 5 10 50 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

10µS
100µS

1mS

10mS

100mS
DC

ARF446/447

Note:

Duty Factor D =

t

1

/

t

2

Peak TJ = PDM x Z

θJC

+ T

C

t

1

t

2

P

DM

1.2

1.1

1.0

16

12

VGS=6.5, 8, 10 & 15V

6V

0.9

(NORMALIZED)

0.8

, THRESHOLD VOLTAGE

GS(th)

0.7

V

0.6

-50 -25 0 25 50 75 100 125 150
T

, CASE TEMPERATURE (°C)

Figure 5, Typical Threshold Voltage vs Temperature

300

250

200

150

100

, POWER OUT (WATTS)

OUT

P

50

0

C

Class C

= 250V

V

DD

f = 40.68 MHz

0246810

P

, POWER IN (WATTS)

Figure 7, Typical Power Out vs Power In

IN

8

4

, DRAIN CURRENT (AMPERES)

D

I

0

1 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 6, Typical Output Characteristics

18

Class C

= 250V

V

DD

f = 40.68 MHz

16

14

(dB)

12

10

, COMMON SOURCE AMPLIFIER GAIN

PS

G

8

0 50 100 150 200 250 300

P

, POWER OUT (WATTS)

Figure 8, Typical Common Source Amplifier Gain vs Power Out

OUT

5.5V

5V

4.5V

0.6
D=0.5

0.1

0.05

0.01

0.005

, THERMAL IMPEDANCE (°C/W)

JC

θ

Z

0.001

-5

10

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

Table 1 - Typical Class C Large Signal Inpu

Freq. (MHz)

2.0

13.5

27.0

40.0

65.0

Z

-

gate shunted by 25Ω

in

Z

-

conjugate of optimum load impedance for 250W at 250V

OL

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

Z

in

-2

10

-1

10

t-O

utput Impedance

(Ω)Z

20.40 - j 9.6

2.10 - j 6.4

0.50 - j 2.3

0.30 - j 0.4

0.46 + j 2.0

(Ω)

OL

142.0 - j 20

73.0 - j 71

30.0 - j 57

15.0 - j 42

6.2 - j 25

1.0 10

050-4907 Rev C

Parts List

ARF446/447

40.68 MHz Test Circuit

C1-C3 -- Arco 465 or equivalent
C4-C6 -- 1nF 500V COG chip
L1 -- 2t #18 AWG .25" ID
L2 -- 3t #18 AWG .25" ID
L3 -- 8t #18 AWG .25" ID
L4 -- VK200-4B ferrite choke 3uH
R1 -- 25 Ohm 1/2W Carbon
T1 -- 4:1 Broadband Transformer

RF Input

L1

T1

L3

DUT

C1

R1

TO-247 Package Outline

L4

C4 C5

L2

C6

C3

C2

40.68 MHz Test Circuit

+

250V

-

RF Output

Top View

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

Dimensions in Millimeters and (Inches)
NOTE: The ARF446 and ARF447 comprise a symmetric

pair of RF power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.

Device

ARF446

ARF447
Gate Drain
Source Source

Source

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

Drain Gate

2.21 (.087)

2.59 (.102)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX:[phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone:[phone] FAX: [phone]

050-4907 Rev C

5.45 (.215) BSC

2-Plcs.