Datasheet ARF443, ARF442 Datasheet (Advanced Power Technology APT)

D

G

TO-247

ARF442 200W 100V 13.56MHz

S

RF OPERATION 1-15MHz

()

N-CH ANNEL ENHANCEMENT MODE RF POWER MOSFET

The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.

• Specified 100 Volt, 13.56 MHz Characteristics:

• Output Power = 200 Watts.

• Gain = 22dB (Typ.)

• Efficiency = 73% (Typ.)

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

V

DGO

I

V

P

R

TJ,T

T

Parameter

Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T

D

Gate-Source Voltage

GS

Total Power Dissipation @ TC = 25°C

D

Junction to Case

θJC

Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

= 25°C

C

ARF443 200W 100V 13.56MHz

THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.

POWER MOS IV

• Low Cost Common Source RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF442/443

300
300

8
±30
167

0.75

-55 to 150
300

®

UNIT

Volts

Amps

Volts

Watts

°C/W

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VDS(ON)

I

DSS

I

GSS

g

VGS(TH)

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (VDS = 10V, ID = 5.5A)

fs

Gate Threshold Voltage (V

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1

(ID(ON) = 6.5A, VGS = 10V)

= VGS, ID = 50mA)

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250 µA)

GS

= V

DS

DSS

= 0.8 V

DS

= ±30V, V

GS

, VGS = 0V)

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

300

250
1000
±100

3.5 4.5
25

UNIT

Volts

6

µA

nA

mhos

Volts

050-4506 Rev C

DYNAMIC CHARACTERISTICS

ARF442/443

Symbol

C

C

C

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Test Conditions

V

= 0V

GS

VDS = 100V

f = 1 MHz

FUNCTIONAL CHARACTERISTICS

Symbol

G

η

G

η

1

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Common Source Amplifier Power Gain

PS1

Drain Efficiency

1

ψ

Electrical Ruggedness VSWR 30:1
Common Source Amplifier Power Gain

PS2

Drain Efficiency

2

Test Conditions

= 100V

V

DD

= 0V

V

GS

P

= 200W

out

f = 13.56MHz

V

= 100V, P

DD

= 50mA, f = 13.56MHz

I

DQ

= 200W

out

TYPICAL 13.56 MHz, 400 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT

MIN TYP MAX

UNIT

730 900
100 140

pF

33 50

MIN TYP MAX

17 18.9

73

UNIT

dB

%

No Degradation in Output Power

22
65

dB

%

T1

2:1

R1

10K

RF

Input

C1

L1

75-480pF

0.5µH

C1 = 75-480pF Compression Mica
C2, C3, C4, C5, C6, C7 & C8 = .01µF @ 200V, CK06
C9 = .1µF @ 100V, CK06
C10 = 10µF @ 100V Electrolytic
R1 = 10KΩ, 5%, 1/4W, Carbon
Q1 = ARF442
Q2 = ARF443

L1 = 7.5 T of #18AWG, ID = .438", L = 0.5µH

Q1

Q2

BFC1

C6

.01µF

Parts List

.01µF

C2

T2

C3

.01µF

C4

C5

.01µF .01µF

RFC1

C7

.01µF

C8 C9 C10

.01µF .1µF 10µF (100V)

+

V

DD

RF

Output

= 100V

BFC1 = Balanced DC Feed Choke; 7 T of #22 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. µi =125
RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. µi = 2000

T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. µi = 850
T2 = 1:1 Z Transmission Line Transformer, using 50Ω coax.

• Coax = 22" of mini 50Ω PTFE coax, OD = .095"

• A large 2-hole balun core was constructed by gluing two Fair-Rite #2643102002, µi = 850 cores together.

• The transformer is constructed by winding 4.5 turns of the coax around the center of the balun core.

PCB = .062" G10 Epoxy Glass.

050-4506 Rev C

ARF442/443

500

400

300

200

100

0

012345678910

16

12

Performance of aTypical

Push-Pull Power Amplifier (2-Devices)

f = 13.56 MHz

V

= 100V

DD

TJ = -55°C

VDS = 30V
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

RF POWER IN (WATTS)

Figure 1, RF Power Out vs RF Power In Figure 2, RF Power Out vs RF Power In

1.2

V

= V

DS

GS

1.1

8

4

, DRAIN CURRENT (AMPERES) RF POWER OUT (WATTS)

D

TJ = +125°C
TJ = +25°C

0

0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150

, GATE-TO-SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)

V

GS

Figure 2, Typical Transfer Characteristics Figure 3, Threshold Voltage vs Temperature

10

5

(ON)

DS

Operation Here
Limited By R

1

.5

TC =+25°C

, DRAIN CURRENT (AMPERES) I

D

TJ =+150°C

.1

1 5 10 50 100 300 -50 -25 0 25 50 75 100 125 150

V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

DS

Figure 4, Maximum DC Safe Operating Area Figure 5, Breakdown Voltage vs Temperature

3,000

TJ = +25°C

TJ = +125°C

TJ = -55°C

1.0

0.9

(TH), THRESHOLD VOLTAGE

0.8

GS

0.7

1.2

1.1

1.0

0.9

VOLTAGE (NORMALIZED) (NORMALIZED)

0.8

(ON), DRAIN-TO-SOURCE BREAKDOWN V

DSS

0.7

BV

C

1,000

iss

500

C

oss

C

100

50

C, CAPACITANCE (pF) I

10

.01 .05 .1 .5 1 5 10 50 100

V

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

DS

Figure 6, Typical Capacitance vs. Drain-To-Source Voltage

rss

050-4506 Rev C

Source

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

TO-247AD Package Outline

ARF442

15.49 (.610)

16.26 (.640)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

ARF44E

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

Dimensions in Millimeters and (Inches)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

2-Plcs.

5.38 (.212)

6.20 (.244)

3.55 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

GATE
SOURCE
DRAIN

ARF442/443

ARF443

4.69 (.185)

Source

5.31 (.209)

1.49 (.059)

2.49 (.098)

6.15 (.242) BSC

20.80 (.819)

21.46 (.845)

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

3.55 (.138)

3.81 (.150)

ARF44O

4.50 (.177) Max.

0.40 (.016)

0.79 (.031)

2.21 (.087)

2.59 (.102)

Dimensions in Millimeters and (Inches)

19.81 (.780)

20.32 (.800)

1.01 (.040)

1.40 (.055)

5.45 (.215) BSC

2-Plcs.

NOTE: The ARF442 and ARF443 comprise a symmetric pair of RF power transistors and
meet the same electrical specifications. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.

2.87 (.113)

3.12 (.123)

1.65 (.065)

2.13 (.084)

DRAIN
SOURCE
GATE

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone:[phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-4506 Rev C