Page 1
D
G
TO-247
ARF440 125W 50V 13.56MHz
S
RF OPERATION 1-15MHz
()
N-CH ANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF440 and ARF441 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
• Specified 50 Volt, 13.56 MHz Characteristics:
• Output Power = 125 Watts.
• Gain = 21dB (Typ.)
• Efficiency = 63% (Typ.)
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
V
DGO
I
V
P
R
TJ,T
T
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
D
Gate-Source Voltage
GS
Total Power Dissipation @ TC = 25°C
D
Junction to Case
θJC
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
= 25°C
C
ARF441 125W 50V 13.56MHz
THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441.
POWER MOS IV
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
ARF440/441
150
150
11
±30
167
0.75
-55 to 150
300
®
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
VDS(ON)
I
DSS
I
GSS
g
VGS(TH)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)557 92 1515 FAX: (33) 5 56 47 97 61
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (VDS = 10V, ID = 5.5A)
fs
Gate Threshold Voltage (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1
(ID(ON) = 10A, VGS = 10V)
= VGS, ID = 200mA)
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250 µA)
GS
= V
DS
DSS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
150
250
1000
±100
45
25
UNIT
Volts
6
µA
nA
mhos
Volts
050-4406 Rev C
Page 2
DYNAMIC CHARACTERISTICS
ARF440/441
Symbol
C
C
C
Characteristic
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Test Conditions
V
= 0V
GS
VDS = 50V
f = 1 MHz
FUNCTIONAL CHARACTERISTICS
Symbol
G
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Common Source Amplifier Power Gain
PS
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 30:1
Test Conditions
= 50V
V
DD
P
= 125W
out
IDQ = 200mA
f = 13.56MHz
TYPICAL 13.56 MHz, 250 WATT PUSH-PULL POWER AMPLIFIER CIRCUIT
T2
RF
Input
C1
L1
75-480pF
0.5µH
2:1
Q1
T1
BFC1
MIN TYP MAX
UNIT
755 900
155 215
pF
55 90
MIN TYP MAX
18 21
63
UNIT
dB
%
No Degradation in Output Power
ATC"B"
.01µF
C5
C6
.01µF
ATC"B"
C4
L2
25-240pF
0.4µH
RF
Output
ATC"B"
.01µF
C7
C8
.01µF
ATC"B"
C9 C10 C11
.01µF .1µF 10µF (50V)
+
V
I
DD
dq
= 50V
= 0.4A
+Vbias
R3
3.3K
3.3K
Q2
C2
.1µF
C3
.1µF
T3
RFC1
3.3K
R1
R2
Parts List
C1 = 75-480pF Compression Mica
C2, C3 & C10 = .1µF @ 50V, Novacap #1210B104K500N
C4 = 25-240pF Compression Mica
C5, C6, C7, C8 & C9 = .01µF @ 50V, Novacap #1210B103K500N
C11 = 10µF @ 50V Electrolytic
R1, R2 & R3 = 1KΩ, 5%, 1/4W, Carbon
Q1 = ARF440
Q2 = ARF441
L1 = 7.5 T of #18AWG, ID = .438", L = 0.5µH
L2 = 6.5 T of #18AWG, ID = .438", L = 0.4µH
BFC1 = Balanced DC Feed Choke; 7 T of #18 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. µi = 125
RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. µi = 2000
T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. µi = 850
T2 & 3 = 1:4 Z Transmission Line Transformer; 6 T of mini 25Ω PTFE coax on a Fair-Rite #2643102002 shield bead. µi = 2000
PCB = .062" G10 Epoxy Glass.
050-4406 Rev C
Page 3
ARF440/441
300
250
200
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16
12
Performance of aTypical
Push-Pull Power Amplifier (2-Devices)
f = 13.56 MHz
V
= 50V
DD
IDQ = 400mA - 200mA / Side
TJ = -55°C
VDS = 30V
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RF POWER IN (WATTS)
Figure 1, RF Power Out vs RF Power In Figure 2, RF Power Out vs RF Power In
1.2
V
= V
DS
GS
1.1
8
TJ = +125°C
4
TJ = +25°C
, DRAIN CURRENT (AMPERES) RF POWER OUT (WATTS)
D
TJ = +125°C
TJ = +25°C
0
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
, GATE-TO-SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)
V
GS
Figure 2, Typical Transfer Characteristics Figure 3, Threshold Voltage vs Temperature
TJ = -55°C
20
1.0
0.9
(TH), THRESHOLD VOLTAGE
0.8
GS
0.7
1.2
10
(ON)
5
DS
Operation Here
Limited By R
1
.5
TC =+25°C
, DRAIN CURRENT (AMPERES) I
D
TJ =+150°C
.1
1 5 10 50 100 150 -50 -25 0 25 50 75 100 125 150
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)
DS
Figure 4, Maximum DC Safe Operating Area Figure 5, Breakdown Voltage vs Temperature
1.1
1.0
0.9
VOLTAGE (NORMALIZED) (NORMALIZED)
0.8
(ON), DRAIN-TO-SOURCE BREAKDOWN V
DSS
0.7
BV
3,000
1,000
C
iss
500
C
oss
C, CAPACITANCE (pF) I
C
rss
100
50
.01 .05 .1 .5 1 5 10 50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
Figure 6, Typical Capacitance vs. Drain-To-Source Voltage
050-4406 Rev C
Page 4
Source
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
TO-247AD Package Outline
ARF440
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
ARF44E
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
Dimensions in Millimeters and (Inches)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
5.38 (.212)
6.20 (.244)
3.55 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
GATE
SOURCE
DRAIN
ARF440/441
ARF441
4.69 (.185)
Source
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
3.55 (.138)
3.81 (.150)
ARF44O
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
Dimensions in Millimeters and (Inches)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
NOTE: The ARF440 and ARF441 comprise a symmetric pair of RF power transistors and
meet the same electrical specifications. The device pin-outs are the mirror image of each
other to allow ease of use as a push-pull pair.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
DRAIN
SOURCE
GATE
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 9761
050-4406 Rev C
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